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IPB10N03LB N-Channel MOSFET 30V 50A Equivalent & Substitute Parts
Part Overview
The IPB10N03LB is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage with 50A continuous drain current at 25°C. This device is housed in a TO-263-3 (D2PAK) surface mount package and is designed for applications requiring moderate to high current switching at low voltage levels. The part is classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing design support and procurement.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain-to-Source Voltage (Vdss) | 30 | V |
| Continuous Drain Current (Id) @ 25°C | 50 | A |
| On-State Resistance (Rds On) @ 50A, 10V | 9.6 | mOhm |
| Gate Threshold Voltage (Vgs(th)) @ 20µA | 2 | V |
| Gate Charge (Qg) @ 5V | 13 | nC |
| Power Dissipation (Max) | 58 | W |
| Operating Temperature Range | -55 to 175 | °C |
| Package Type | TO-263-3 (D2PAK) | — |
| Mounting Type | Surface Mount | — |
Substitute Part Grouping Explanation
Substitution of the IPB10N03LB is determined by strict adherence to the following electrical and mechanical parameters:
Critical Matching Parameters:
- Drain-to-Source Voltage (Vdss): Must equal 30V
- Package Type: Must be TO-263-3 or D2PAK (2 Leads + Tab)
- Mounting Type: Must be Surface Mount
- FET Type: Must be N-Channel
- Technology: Must be MOSFET (Metal Oxide)
- Operating Temperature Range: Must support -55°C to 175°C
Functional Compatibility Parameters:
- Continuous Drain Current (Id): Substitute must meet or exceed 50A at 25°C
- On-State Resistance (Rds On): Lower values indicate improved performance
- Gate Threshold Voltage (Vgs(th)): Must be compatible with 4.5V to 10V drive voltage range
- Power Dissipation: Must support thermal requirements of the application
Two substitute parts meet these criteria with differing current and power ratings.
Parameter Comparison
| Parameter | IPB10N03LB (Main) | PSMN017-30BL,118 | PSMN4R3-30BL,118 | Unit |
|---|---|---|---|---|
| Manufacturer | Infineon Technologies | Nexperia USA Inc. | Nexperia USA Inc. | — |
| Drain-to-Source Voltage (Vdss) | 30 | 30 | 30 | V |
| Continuous Drain Current (Id) @ 25°C | 50 | 32 | 100 | A |
| Rds On (Max) @ Specified Conditions | 9.6 @ 50A, 10V | 17 @ 10A, 10V | 4.1 @ 15A, 10V | mOhm |
| Gate Threshold Voltage (Vgs(th)) (Max) | 2 @ 20µA | 2.15 @ 1mA | 2.15 @ 1mA | V |
| Gate Charge (Qg) (Max) | 13 @ 5V | 10.7 @ 10V | 41.5 @ 10V | nC |
| Input Capacitance (Ciss) (Max) @ 15V | 1639 | 552 | 2400 | pF |
| Power Dissipation (Max) | 58 | 47 | 103 | W |
| Operating Temperature Range | -55 to 175 | -55 to 175 | -55 to 175 | °C |
| Package Type | TO-263-3 (D2PAK) | D2PAK | D2PAK | — |
| Product Status | Obsolete | Obsolete | Active | — |
| RoHS Compliance | Non-compliant | ROHS3 Compliant | ROHS3 Compliant | — |
Engineering Selection Recommendations
PSMN017-30BL,118 (Nexperia USA Inc.): This substitute is suitable for applications where the continuous drain current requirement does not exceed 32A. The part is classified as obsolete but maintains ROHS3 compliance. The on-state resistance of 17 mOhm at 10A, 10V is higher than the main part, resulting in increased power dissipation in high-current scenarios. This device is appropriate for designs with lower current demands or where thermal management is not critical. Inventory availability is 2767 pieces.
PSMN4R3-30BL,118 (Nexperia USA Inc.): This substitute is suitable for applications requiring continuous drain current up to 100A, exceeding the main part specification. The on-state resistance of 4.1 mOhm at 15A, 10V is significantly lower, providing superior efficiency and reduced thermal dissipation. The part is classified as active, ensuring long-term availability and supply chain stability. ROHS3 compliance is confirmed. This device is recommended for new designs or applications where current capacity and regulatory compliance are priorities. Inventory availability is 10750 pieces.
Both substitutes share identical voltage ratings (30V Vdss), operating temperature range (-55°C to 175°C), and package type (D2PAK/TO-263-3), ensuring mechanical and electrical compatibility with the original design footprint.
Frequently Asked Questions (FAQ)
Q: Can PSMN017-30BL,118 be used as a direct replacement for IPB10N03LB in all applications?
A: PSMN017-30BL,118 is mechanically and electrically compatible with IPB10N03LB in terms of voltage rating, package type, and operating temperature range. However, the continuous drain current rating is 32A compared to 50A for the main part. This substitute is suitable only for applications where the actual operating current does not exceed 32A. Applications requiring the full 50A capability must use PSMN4R3-30BL,118.
Q: What are the key differences between the two substitute parts?
A: PSMN017-30BL,118 is rated for 32A continuous drain current with 47W maximum power dissipation and is classified as obsolete. PSMN4R3-30BL,118 is rated for 100A continuous drain current with 103W maximum power dissipation and is classified as active. Both share the same 30V voltage rating and D2PAK package. The choice depends on current requirements and long-term availability needs.
Q: Are both substitute parts RoHS compliant?
A: Yes. Both PSMN017-30BL,118 and PSMN4R3-30BL,118 are ROHS3 compliant, whereas the original IPB10N03LB is RoHS non-compliant. This compliance improvement may be required for new designs or regulatory adherence.
Q: Can the substitute parts be used interchangeably on the same PCB layout?
A: Yes. Both substitute parts use the D2PAK (TO-263-3) package with identical pinout and footprint compatibility. PCB layout modifications are not required for either substitute.
Q: How do the on-state resistance values affect circuit performance?
A: On-state resistance (Rds On) directly impacts power dissipation and heat generation. PSMN4R3-30BL,118 has the lowest Rds On at 4.1 mOhm, resulting in minimal power loss. PSMN017-30BL,118 has higher Rds On at 17 mOhm, resulting in greater power dissipation. For high-current applications, lower Rds On values are preferred to reduce thermal stress and improve efficiency.
Q: What is the significance of gate charge (Qg) differences?
A: Gate charge affects switching speed and driver circuit requirements. PSMN017-30BL,118 has the lowest gate charge at 10.7 nC, enabling faster switching with lower driver power consumption. PSMN4R3-30BL,118 has higher gate charge at 41.5 nC due to its higher current rating, requiring more robust gate drive circuitry. The original part has 13 nC gate charge.
Q: Which substitute should be selected for new product designs?
A: PSMN4R3-30BL,118 is recommended for new designs due to its active product status, ensuring long-term availability and supply chain continuity. It also provides superior electrical performance with lower on-state resistance and higher current capacity, offering design flexibility for future requirements.
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