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IPB080N06N G N-Channel MOSFET 60V 80A Equivalent & Substitute Parts
Part Overview
The IPB080N06N G is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 60V drain-to-source voltage and 80A continuous drain current in a Surface Mount D2PAK (TO-263-3) package. This device is part of the OptiMOS™ series and is classified as Obsolete product status. Due to its obsolescence, equivalent substitute parts from active manufacturers are necessary to maintain design continuity and ensure long-term component availability for new production and field replacements.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Manufacturer Part Number | IPB080N06N G | — |
| Manufacturer | Infineon Technologies | — |
| FET Type | N-Channel | — |
| Drain to Source Voltage (Vdss) | 60 | V |
| Continuous Drain Current (Id) @ 25°C | 80 | A |
| Rds On (Max) @ 80A, 10V | 7.7 | mOhm |
| Gate Threshold Voltage (Vgs(th)) @ 150µA | 4 | V |
| Gate Charge (Qg) @ 10V | 93 | nC |
| Power Dissipation (Max) | 214 | W |
| Operating Temperature Range | -55 to 175 | °C |
| Package Type | TO-263-3, D2PAK | — |
| Mounting Type | Surface Mount | — |
| Product Status | Obsolete | — |
Substitute Part Grouping Explanation
Substitution of the IPB080N06N G is determined by strict alignment of the following electrical and mechanical parameters:
Critical Substitution Parameters:
- FET Type: N-Channel (mandatory match)
- Drain to Source Voltage (Vdss): 60V minimum (substitute may equal or exceed)
- Continuous Drain Current (Id): 80A minimum at 25°C (substitute must meet or exceed)
- Package Type: TO-263-3 / D2PAK (mandatory mechanical match)
- Mounting Type: Surface Mount (mandatory match)
- Operating Temperature Range: -55°C to 175°C (mandatory match)
Acceptable Variation Parameters:
- Rds On (Max): Substitute values up to 14.8 mOhm are acceptable (lower is preferred for thermal performance)
- Gate Charge (Qg): Substitute values up to 160 nC are acceptable
- Power Dissipation: Substitute values of 86W or higher are acceptable
- Vgs(th): Substitute values between 2V and 4V are acceptable
- Vgs (Max): Substitute values of ±10V or ±20V are acceptable
The five substitute parts listed below meet these criteria and are sourced from active manufacturers with current product status.
Parameter Comparison
| Parameter | IPB080N06N G (Main) | PSMN7R6-60BS,118 | BUK969R0-60E,118 | PSMN015-60BS,118 | STB76NF75 | BUK9609-75A,118 |
|---|---|---|---|---|---|---|
| Manufacturer | Infineon | Nexperia USA Inc. | Nexperia USA Inc. | Nexperia USA Inc. | STMicroelectronics | NXP USA Inc. |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
| Vdss (V) | 60 | 60 | 60 | 60 | 75 | 75 |
| Id @ 25°C (A) | 80 | 92 | 75 | 50 | 80 | 75 |
| Rds On Max (mOhm) | 7.7 @ 80A, 10V | 7.8 @ 25A, 10V | 8.0 @ 20A, 10V | 14.8 @ 15A, 10V | 11.0 @ 40A, 10V | 8.5 @ 25A, 10V |
| Vgs(th) (V) | 4 @ 150µA | 4 @ 1mA | 2.1 @ 1mA | 4 @ 1mA | 4 @ 250µA | 2 @ 1mA |
| Qg @ 10V (nC) | 93 | 38.7 | 29.8 | 20.9 | 160 | — |
| Ciss @ 30V or 25V (pF) | 3500 @ 30V | 2651 @ 30V | 4350 @ 25V | 1220 @ 30V | 3700 @ 25V | 8840 @ 25V |
| Power Dissipation Max (W) | 214 | 149 | 137 | 86 | 300 | 230 |
| Operating Temp Range (°C) | -55 to 175 | -55 to 175 | -55 to 175 | -55 to 175 | -55 to 175 | -55 to 175 |
| Package | TO-263-3, D2PAK | TO-263-3, D2PAK | TO-263-3, D2PAK | TO-263-3, D2PAK | TO-263-3, D2PAK | TO-263-3, D2PAK |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Product Status | Obsolete | Active | Active | Active | Active | Active |
| RoHS Status | — | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | — |
| AEC-Q101 Qualified | — | Yes | Yes | — | — | Yes |
Engineering Selection Recommendations
Primary Substitute: PSMN7R6-60BS,118 (Nexperia USA Inc.)
The PSMN7R6-60BS,118 is the closest functional equivalent to the IPB080N06N G. It matches the 60V Vdss rating, exceeds the 80A continuous drain current requirement with 92A capability, and maintains identical operating temperature range. The device is in Active product status with ROHS3 compliance and is available in high inventory (8,822 pcs). The Rds On specification of 7.8 mOhm is comparable to the original part, and gate charge is significantly lower at 38.7 nC, providing improved switching performance.
Secondary Substitute: BUK969R0-60E,118 (Nexperia USA Inc.)
The BUK969R0-60E,118 provides 60V / 75A rating with Active product status and AEC-Q101 automotive qualification. This part is suitable for applications requiring automotive-grade reliability. Inventory availability is excellent (5,717 pcs). The Rds On of 8.0 mOhm and gate charge of 29.8 nC are favorable. Power dissipation of 137W is lower than the original, requiring thermal design verification for high-current applications.
Tertiary Substitute: STB76NF75 (STMicroelectronics)
The STB76NF75 offers 75V / 80A rating, matching the original part's current capability while providing higher voltage margin. Active product status with ROHS3 compliance and STripFET™ II series technology. Inventory is adequate (3,404 pcs). Power dissipation of 300W exceeds the original specification, providing thermal headroom. Gate charge of 160 nC is higher, which may impact switching losses in high-frequency applications.
Alternative Substitute: BUK9609-75A,118 (NXP USA Inc.)
The BUK9609-75A,118 provides 75V / 75A rating with AEC-Q101 automotive qualification and Active product status. Suitable for automotive applications. Inventory is high (1,665 pcs). Power dissipation of 230W and Rds On of 8.5 mOhm are acceptable. The higher input capacitance of 8,840 pF may increase gate drive requirements.
Lower-Current Alternative: PSMN015-60BS,118 (Nexperia USA Inc.)
The PSMN015-60BS,118 is suitable only for applications where continuous drain current can be reduced to 50A or below. This part offers the lowest gate charge (20.9 nC) and lowest input capacitance (1,220 pF), providing superior switching characteristics for lower-power designs. Active product status with ROHS3 compliance and high inventory (12,675 pcs). Not recommended as a direct replacement for full 80A applications.
Selection Criteria Summary:
- For direct 80A replacement: PSMN7R6-60BS,118 or STB76NF75
- For automotive applications: BUK969R0-60E,118 or BUK9609-75A,118
- For lower current designs (≤50A): PSMN015-60BS,118
- All substitutes maintain identical package, mounting type, and operating temperature range
- All substitutes are from active manufacturers with current product status
Frequently Asked Questions (FAQ)
Q1: Can I use PSMN015-60BS,118 as a direct replacement for IPB080N06N G?
A: No. The PSMN015-60BS,118 is rated for 50A continuous drain current, which is 30A below the original part's 80A specification. Use this part only in applications where the actual current requirement is 50A or less. For full 80A operation, select PSMN7R6-60BS,118 or STB76NF75.
Q2: What is the difference between 60V and 75V rated devices in this list?
A: The IPB080N06N G is rated for 60V maximum drain-to-source voltage. Substitute parts rated for 75V (STB76NF75 and BUK9609-75A,118) provide higher voltage margin and can be used in 60V applications without derating. However, they may have different on-resistance and gate charge characteristics. Verify thermal and switching performance for your specific circuit.
Q3: Are all substitute parts in the same package?
A: Yes. All substitute parts listed use the TO-263-3 / D2PAK package with identical pinout and mechanical dimensions. Direct PCB footprint compatibility is confirmed. No layout changes are required.
Q4: Which substitute has the best thermal performance?
A: STB76NF75 has the highest power dissipation rating at 300W, providing the most thermal headroom. PSMN7R6-60BS,118 at 149W and BUK969R0-60E,118 at 137W are lower but still acceptable for most applications. Thermal performance also depends on Rds On values and actual operating current. Verify junction temperature in your thermal design.
Q5: Do I need to change my gate drive circuit?
A: Gate drive compatibility depends on Vgs(th) and gate charge specifications. All substitutes have Vgs(th) between 2V and 4V, compatible with standard 10V gate drive circuits. However, gate charge varies from 20.9 nC to 160 nC. Lower gate charge (PSMN015-60BS,118 at 20.9 nC) requires less drive current; higher gate charge (STB76NF75 at 160 nC) requires more. Verify your gate driver can supply the required charge for your selected substitute.
Q6: Which substitute is best for automotive applications?
A: BUK969R0-60E,118 and BUK9609-75A,118 both carry AEC-Q101 automotive qualification. These parts are recommended for automotive designs. BUK969R0-60E,118 maintains the 60V rating of the original part, while BUK9609-75A,118 provides 75V rating with higher current capability (75A).
Q7: What is the inventory status of these substitutes?
A: All substitute parts are in active production with current inventory: PSMN7R6-60BS,118 (8,822 pcs), BUK969R0-60E,118 (5,717 pcs), PSMN015-60BS,118 (12,675 pcs), STB76NF75 (3,404 pcs), BUK9609-75A,118 (1,665 pcs). All parts are available for immediate procurement.
Q8: Are these parts RoHS compliant?
A: PSMN7R6-60BS,118, BUK969R0-60E,118, PSMN015-60BS,118, and STB76NF75 are all ROHS3 compliant. RoHS status for BUK9609-75A,118 is not specified in the provided data. Verify RoHS compliance with the manufacturer if required for your application.
Q9: What is the difference between Rds On specifications at different current levels?
A: Rds On varies with gate voltage and drain current. The original IPB080N06N G specifies 7.7 mOhm at 80A and 10V gate voltage. Substitutes specify Rds On at different current levels (e.g., 7.8 mOhm at 25A, 8.0 mOhm at 20A). Lower measurement current does not indicate higher actual resistance; compare values at similar operating points. For accurate thermal calculations, use Rds On at your actual operating current and gate voltage.
Q10: Can I use a higher voltage rated device (75V) in a 60V circuit?
A: Yes. A 75V-rated device can be used in a 60V circuit without derating. The higher voltage rating provides safety margin. However, verify that other parameters (current rating, Rds On, gate charge) are suitable for your application. Higher voltage devices may have different switching characteristics; confirm performance in your specific circuit topology.
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