IPB080N03LGATMA1 Equivalent & Substitute Parts

Part Overview

The IPB080N03LGATMA1 is an N-Channel 30V 50A MOSFET manufactured by Infineon Technologies in the OptiMOS™ series, housed in a D2PAK (TO-263-3) surface mount package. This device is classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing design support and procurement continuity. Substitute parts must maintain compatibility across drain-source voltage rating, continuous drain current capability, on-resistance characteristics, and package form factor to ensure direct replacement viability in existing circuit designs.

Substiute Parts

IPB080N03LGATMA1

Infineon TechnologiesIn Stock: 949IPB080N03LGATMA1 Datasheet

Current PartRFQ

PSMN017-30BL,118

Nexperia USA Inc.In Stock: 2850PSMN017-30BL,118 Datasheet

MFR RecommendedRFQ

PSMN4R3-30BL,118

Nexperia USA Inc.In Stock: 10797PSMN4R3-30BL,118 Datasheet

MFR RecommendedRFQ

PSMNR90-30BL,118

Nexperia USA Inc.In Stock: 10973PSMNR90-30BL,118 Datasheet

MFR RecommendedRFQ

STB70NF03LT4

STMicroelectronicsIn Stock: 25184STB70NF03LT4 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility is determined by the following criteria applied strictly to the provided parameters:

Primary Compatibility Requirements:

• Drain-Source Voltage (Vdss): Must equal or exceed 30V
• Package Type: Must be D2PAK (TO-263-3) surface mount
• Operating Temperature Range: Must span -55°C to 175°C minimum
• RoHS Compliance: Must maintain ROHS3 Compliant status
• Mounting Type: Must be Surface Mount

Secondary Selection Criteria:

• Continuous Drain Current (Id): Substitute must support minimum 50A at 25°C
• On-Resistance (Rds On): Lower values indicate improved performance; higher values require thermal analysis
• Gate Charge (Qg): Affects switching speed and driver requirements
• Power Dissipation: Must accommodate thermal design constraints

Substitute Categories:

Category A - Direct Current Rating Match (50A nominal): PSMN017-30BL,118 operates at 32A continuous drain current, below the 50A requirement of the main part.

Category B - Higher Current Rating (70A and above): STB70NF03LT4 (70A), PSMN4R3-30BL,118 (100A), and PSMNR90-30BL,118 (120A) exceed the 50A specification and provide design margin for thermal and current distribution considerations.

All substitute parts maintain 30V Vdss rating, D2PAK packaging, -55°C to 175°C operating range, and ROHS3 compliance.

Parameter Comparison

Engineering Selection Recommendations

PSMN017-30BL,118 (Nexperia USA Inc.)

This substitute operates at 32A continuous drain current, which falls below the 50A specification of the main part. While it maintains identical 30V Vdss rating, D2PAK packaging, and ROHS3 compliance, the reduced current rating limits its application to designs where the actual operating current does not exceed 32A. Product status is obsolete, matching the main part's lifecycle stage. Selection requires verification that circuit current demands remain within the 32A boundary.

PSMN4R3-30BL,118 (Nexperia USA Inc.)

This substitute provides 100A continuous drain current, exceeding the 50A requirement by 100 percent. It maintains 30V Vdss, D2PAK packaging, and ROHS3 compliance. On-resistance is 4.1 mOhm at 15A and 10V, lower than the main part's 8 mOhm specification, resulting in reduced power dissipation and improved thermal performance. Product status is active, ensuring long-term availability. Gate charge increases to 41.5 nC, requiring driver capability assessment. Power dissipation rating of 103W accommodates higher thermal loads.

PSMNR90-30BL,118 (Nexperia USA Inc.)

This substitute delivers 120A continuous drain current with the lowest on-resistance of 1 mOhm at 25A and 10V. It maintains 30V Vdss, D2PAK packaging, and ROHS3 compliance. Product status is active. Gate charge is significantly elevated at 243 nC, requiring driver circuit redesign. Power dissipation rating of 306W supports high-current applications. Input capacitance reaches 14850 pF, substantially higher than the main part's 1900 pF, affecting switching characteristics and EMI performance.

STB70NF03LT4 (STMicroelectronics)

This substitute provides 70A continuous drain current, exceeding the 50A requirement by 40 percent. It maintains 30V Vdss, D2PAK packaging, and ROHS3 compliance. On-resistance is 9.5 mOhm at 35A and 10V, comparable to the main part's 8 mOhm specification. Product status is active, ensuring availability. Gate threshold voltage is 1V at 250µA, lower than the main part's 2.2V, affecting gate drive timing. Gate charge is 30 nC at 5V, higher than the main part's 18 nC at 10V. Power dissipation rating of 100W supports thermal design requirements.

Frequently Asked Questions (FAQ)

Q: Can PSMN017-30BL,118 directly replace IPB080N03LGATMA1 in all applications?

A: No. PSMN017-30BL,118 is rated for 32A continuous drain current, which is 36 percent below the main part's 50A specification. Direct replacement is limited to applications where actual operating current does not exceed 32A. Circuit analysis must confirm current demands remain within this boundary.

Q: What are the thermal implications of selecting PSMN4R3-30BL,118 or PSMNR90-30BL,118?

A: Both parts feature lower on-resistance values than the main part, reducing resistive heating. PSMN4R3-30BL,118 has 4.1 mOhm on-resistance and 103W power dissipation rating. PSMNR90-30BL,118 has 1 mOhm on-resistance and 306W power dissipation rating. Lower on-resistance improves thermal performance but requires verification that PCB thermal design and heatsinking accommodate the higher power dissipation capability.

Q: How does gate charge affect driver circuit selection?

A: Gate charge determines the charge quantity required to switch the MOSFET. The main part requires 18 nC at 10V. PSMN017-30BL,118 requires 10.7 nC (lower), STB70NF03LT4 requires 30 nC (higher), PSMN4R3-30BL,118 requires 41.5 nC (higher), and PSMNR90-30BL,118 requires 243 nC (significantly higher). Higher gate charge demands greater driver current capability and may require driver circuit redesign.

Q: Are all substitute parts available in the same packaging?

A: Yes. All substitute parts are housed in D2PAK (TO-263-3) surface mount packages, maintaining identical PCB footprint and thermal interface characteristics with the main part.

Q: What is the significance of product status differences?

A: The main part IPB080N03LGATMA1 is obsolete. PSMN017-30BL,118 is also obsolete, limiting long-term procurement viability. PSMN4R3-30BL,118, PSMNR90-30BL,118, and STB70NF03LT4 are active products, ensuring continued manufacturing and supply chain availability for future production runs.

Q: Can STB70NF03LT4 be used as a drop-in replacement?

A: STB70NF03LT4 maintains 30V Vdss, D2PAK packaging, and ROHS3 compliance. However, gate threshold voltage is 1V compared to the main part's 2.2V, and gate charge is 30 nC at 5V compared to 18 nC at 10V. These differences affect gate drive timing and switching characteristics. Circuit validation is required before implementation.

Q: Which substitute offers the best performance match to the original part?

A: STB70NF03LT4 provides the closest performance match, with 70A continuous drain current (40 percent above the 50A requirement), 9.5 mOhm on-resistance (comparable to the main part's 8 mOhm), and active product status. On-resistance and gate charge characteristics require driver circuit assessment.