IPB065N06L G N-Channel 60V 80A MOSFET Equivalent & Substitute Parts

Part Overview

The IPB065N06L G is an N-Channel 60V 80A MOSFET manufactured by Infineon Technologies in the OptiMOS™ series. This device is packaged in TO-263-3 (D2PAK) surface mount configuration with a maximum power dissipation of 250W at case temperature. The part is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support, production continuity, and system maintenance applications.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	60	V
Continuous Drain Current (Id) @ 25°C	80	A (Tc)
Rds On (Max) @ 80A, 10V	6.2	mOhm
Gate Threshold Voltage (Vgs(th)) @ 180µA	2	V
Gate Charge (Qg) @ 10V	157	nC
Input Capacitance (Ciss) @ 30V	5100	pF
Power Dissipation (Max)	250	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-263-3, D2PAK	Surface Mount
FET Type	N-Channel	MOSFET

Substitute Part Grouping Explanation

Substitution of the IPB065N06L G is determined by strict alignment of the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): 55V minimum to 60V (allows 55V parts for 60V applications with voltage margin consideration)
Continuous Drain Current (Id): 75A minimum (maintains or exceeds 80A specification)
Package Type: TO-263-3 / D2PAK (identical mechanical footprint and thermal interface)
Operating Temperature Range: -55°C to 175°C minimum (matches thermal envelope)
Rds On (Max): 6.2mOhm to 8mOhm @ specified current and gate voltage (maintains conduction losses within acceptable range)
Gate Charge (Qg): 29.8nC to 157nC @ 10V (ensures gate drive compatibility)
Vgs (Max): ±10V to ±20V (ensures gate voltage tolerance compatibility)

Secondary Alignment Parameters:

Moisture Sensitivity Level (MSL): Level 1 (Unlimited) for all substitutes
REACH Status: REACH Unaffected for all substitutes
ECCN Classification: EAR99 for all substitutes
HTSUS Code: 8541.29.0095 for all substitutes

Substitutes are grouped by product status (Active preferred over Obsolete) and automotive qualification (AEC-Q101) where applicable. All substitute parts maintain the N-Channel MOSFET technology and surface mount configuration required for direct replacement.

Parameter Comparison

Parameter	IPB065N06L G	BUK9606-55A,118	BUK966R5-60E,118	BUK969R0-60E,118	FDB070AN06A0	FDB5800	PSMN7R6-60BS,118	SQM120N06-06_GE3	STB80NF55-06T4
Manufacturer	Infineon	Nexperia	Nexperia	Nexperia	onsemi	onsemi	Nexperia	Vishay	STMicroelectronics
Vdss (V)	60	55	60	60	60	60	60	60	55
Id @ 25°C (A)	80 (Tc)	75 (Tj)	75 (Tc)	75 (Tc)	80 (Tc)	80 (Tc)	92 (Tc)	120 (Tc)	80 (Tc)
Rds On (Max) (mOhm)	6.2 @ 80A, 10V	5.8 @ 25A, 10V	5.9 @ 25A, 10V	8 @ 20A, 10V	7 @ 80A, 10V	6 @ 80A, 10V	7.8 @ 25A, 10V	6 @ 30A, 10V	6.5 @ 40A, 10V
Vgs(th) (Max) (V)	2 @ 180µA	2 @ 1mA	2.1 @ 1mA	2.1 @ 1mA	4 @ 250µA	2.5 @ 250µA	4 @ 1mA	3.5 @ 250µA	4 @ 250µA
Qg (Max) @ 10V (nC)	157	Not specified	48	29.8	66	135	38.7	145	189
Ciss (Max) (pF)	5100 @ 30V	8600 @ 25V	6900 @ 25V	4350 @ 25V	3000 @ 25V	6625 @ 15V	2651 @ 30V	6495 @ 25V	4400 @ 25V
Vgs (Max) (±V)	±20	±15	±10	±10	±20	±20	±20	±20	±20
Power Dissipation (Max) (W)	250	300	182	137	175	242	149	230	300
Operating Temp Range (°C)	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175
Package	TO-263-3, D2PAK	D2PAK	D2PAK	D2PAK	TO-263 (D2PAK)	TO-263 (D2PAK)	D2PAK	TO-263 (D2PAK)	D2PAK
Product Status	Obsolete	Obsolete	Active	Active	Active	Active	Active	Active	Active
AEC-Q101	Not specified	Yes	Yes	Yes	Not specified	Not specified	Not specified	Yes	Not specified

Engineering Selection Recommendations

Primary Substitutes (Active Status, Highest Compatibility):

BUK966R5-60E,118 (Nexperia) is the preferred primary substitute. This part maintains 60V Vdss matching, 75A continuous drain current, and D2PAK packaging identical to the IPB065N06L G. The device carries AEC-Q101 automotive qualification and active product status, ensuring long-term availability. Rds On of 5.9mOhm @ 25A, 10V is within acceptable conduction loss parameters. Gate charge of 48nC @ 5V provides improved gate drive efficiency compared to the original 157nC specification.

SQM120N06-06_GE3 (Vishay Siliconix) provides superior current handling at 120A continuous drain current with 60V Vdss and TO-263 (D2PAK) packaging. This part exceeds the original 80A specification, offering design margin for thermal and electrical stress. AEC-Q101 qualification and active status support production continuity. Rds On of 6mOhm @ 30A, 10V maintains conduction efficiency. Gate charge of 145nC @ 10V closely matches the original specification.

FDB5800 (onsemi) matches the original 80A continuous drain current specification at 60V Vdss with TO-263 (D2PAK) packaging. Active product status and high inventory (15,265 pcs) ensure availability. Power dissipation of 242W exceeds the original 250W specification. Rds On of 6mOhm @ 80A, 10V provides equivalent conduction performance. Gate charge of 135nC @ 10V is comparable to the original 157nC.

Secondary Substitutes (Active Status, Parameter Trade-offs):

BUK9606-55A,118 (Nexperia) operates at 55V Vdss with 75A continuous drain current. This part is suitable for applications where 55V operation is acceptable within the system design margin. AEC-Q101 qualification and D2PAK packaging support direct replacement. Power dissipation of 300W exceeds the original specification. Rds On of 5.8mOhm @ 25A, 10V provides improved conduction efficiency.

STB80NF55-06T4 (STMicroelectronics) provides 80A continuous drain current at 55V Vdss with D2PAK packaging. Active product status and high inventory (15,465 pcs) ensure availability. Power dissipation of 300W exceeds the original specification. Rds On of 6.5mOhm @ 40A, 10V maintains acceptable conduction losses. Gate charge of 189nC @ 10V is higher than the original specification, requiring gate drive circuit evaluation.

Tertiary Substitutes (Active Status, Current Derating):

BUK969R0-60E,118 (Nexperia) operates at 60V Vdss with 75A continuous drain current. This part provides voltage matching with current derating from the original 80A specification. AEC-Q101 qualification and active status support production use. Rds On of 8mOhm @ 20A, 10V represents increased conduction losses. Gate charge of 29.8nC @ 5V provides improved gate drive efficiency.

PSMN7R6-60BS,118 (Nexperia) provides 92A continuous drain current at 60V Vdss, exceeding the original specification. Active product status and D2PAK packaging support direct replacement. Rds On of 7.8mOhm @ 25A, 10V represents acceptable conduction performance. Gate charge of 38.7nC @ 10V provides improved gate drive efficiency. Input capacitance of 2651pF @ 30V is significantly lower than the original 5100pF, reducing gate drive requirements.

FDB070AN06A0 (onsemi) matches the original 80A continuous drain current at 60V Vdss with TO-263 (D2PAK) packaging. Active product status supports production continuity. Power dissipation of 175W is lower than the original 250W specification, requiring thermal design evaluation. Rds On of 7mOhm @ 80A, 10V represents acceptable conduction performance.

Frequently Asked Questions (FAQ)

Q: Can BUK9606-55A,118 replace IPB065N06L G in a 60V application?

A: BUK9606-55A,118 operates at 55V Vdss maximum. Direct substitution in 60V applications is not recommended without circuit design verification. The 5V voltage margin reduction may compromise system reliability under transient overvoltage conditions. Applications with regulated 55V or lower supply voltages are suitable for this substitute.

Q: What is the difference between continuous drain current ratings specified as (Tc) versus (Tj)?

A: (Tc) indicates continuous drain current at case temperature, typically 25°C. (Tj) indicates continuous drain current at junction temperature. Both specifications define maximum safe operating current under specified thermal conditions. The IPB065N06L G specifies 80A (Tc), while BUK9606-55A,118 specifies 75A (Tj). These are equivalent performance metrics for substitution purposes.

Q: Why does SQM120N06-06_GE3 have higher current rating than the original part?

A: SQM120N06-06_GE3 is rated for 120A continuous drain current at case temperature, compared to 80A for IPB065N06L G. This higher rating reflects improved semiconductor technology and thermal design in the TrenchFET® series. The part is suitable for direct replacement and provides design margin for thermal stress and current transients.

Q: Are all substitute parts qualified to AEC-Q101?

A: No. AEC-Q101 automotive qualification is specified for BUK9606-55A,118, BUK966R5-60E,118, BUK969R0-60E,118, SQM120N06-06_GE3, and STB80NF55-06T4. FDB070AN06A0, FDB5800, and PSMN7R6-60BS,118 do not list AEC-Q101 qualification. For automotive applications, select from AEC-Q101 qualified substitutes.

Q: What is the significance of gate charge (Qg) differences between parts?

A: Gate charge determines the energy required to switch the MOSFET on and off. IPB065N06L G specifies 157nC @ 10V. Substitutes range from 29.8nC to 189nC. Lower gate charge (BUK969R0-60E,118 at 29.8nC) reduces gate drive power and switching losses. Higher gate charge (STB80NF55-06T4 at 189nC) requires more gate drive current. Gate drive circuit design must accommodate the selected substitute's gate charge specification.

Q: Can parts with lower power dissipation ratings replace IPB065N06L G?

A: Parts with lower power dissipation ratings (BUK969R0-60E,118 at 137W, PSMN7R6-60BS,118 at 149W) can replace IPB065N06L G (250W) only if the application thermal design ensures case temperature remains within the device's operating range. Thermal analysis is required to confirm adequate heat dissipation. These parts are suitable for lower power applications or designs with superior thermal management.

Q: What is the impact of Rds On variation among substitutes?

A: Rds On (on-state resistance) directly affects conduction losses and heat generation. IPB065N06L G specifies 6.2mOhm @ 80A, 10V. Substitutes range from 5.8mOhm to 8mOhm. Lower Rds On (BUK9606-55A,118 at 5.8mOhm) reduces conduction losses and improves efficiency. Higher Rds On (BUK969R0-60E,118 at 8mOhm) increases conduction losses. Selection depends on application current levels and thermal budget.

Q: Are all substitutes available in identical packaging?

A: Yes. All substitute parts are packaged in TO-263-3 or D2PAK (equivalent designations for the same physical package). This ensures mechanical compatibility with PCB layouts designed for IPB065N06L G. Pin configuration and thermal interface (tab) are identical across all substitutes.

Q: What inventory considerations apply to substitute selection?

A: FDB5800 has the highest inventory (15,265 pcs), followed by STB80NF55-06T4 (15,465 pcs). These parts offer immediate availability for production. BUK966R5-60E,118 (5,594 pcs) and BUK969R0-60E,118 (5,717 pcs) provide adequate stock. SQM120N06-06_GE3 (2,900 pcs) and BUK9606-55A,118 (874 pcs) have lower inventory. For high-volume production, prioritize parts with higher stock levels.

Q: Which substitute is recommended for new designs?

A: BUK966R5-60E,118 or SQM120N06-06_GE3 are recommended for new designs. Both are active products with AEC-Q101 qualification, ensuring long-term availability and design support. BUK966R5-60E,118 provides direct parameter matching at 60V, 75A. SQM120N06-06_GE3 offers superior current handling at 120A with design margin. Both support automotive and industrial applications.

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