IPB04N03LAT N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IPB04N03LAT is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 25V drain-to-source voltage with 80A continuous drain current in a Surface Mount D2PAK (TO-263-3) package. This device is classified as Obsolete, indicating it is no longer in active production. Due to its obsolete status, identifying functionally equivalent substitute parts is essential for design continuity, production support, and long-term component availability.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	25	V
Continuous Drain Current (Id) @ 25°C	80	A (Tc)
On-State Resistance (Rds On Max) @ 55A, 10V	3.9	mOhm
Gate Threshold Voltage (Vgs th Max) @ 60µA	2	V
Gate Charge (Qg Max) @ 5V	32	nC
Power Dissipation (Max)	107	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	D2PAK (TO-263-3)	Surface Mount
Moisture Sensitivity Level	1 (Unlimited)	MSL

Substitute Part Grouping Explanation

Substitution of the IPB04N03LAT is determined by the following critical parameters:

Voltage Rating Compatibility: Substitute parts must have a Vdss rating equal to or greater than 25V. All identified substitutes feature 30V ratings, providing adequate voltage margin.

Current Handling Capability: The continuous drain current (Id) must meet or exceed 80A at 25°C. Substitutes range from 32A to 140A, with selection dependent on application requirements.

On-State Resistance (Rds On): The maximum on-state resistance must be comparable to or lower than the original 3.9mOhm specification to maintain similar thermal and efficiency characteristics.

Package Compatibility: All substitutes utilize the D2PAK (TO-263-3) Surface Mount package, ensuring mechanical and thermal interface compatibility.

Gate Charge and Threshold Voltage: These parameters affect switching speed and gate drive requirements. Substitutes maintain compatible gate characteristics within the specified voltage ranges.

Temperature Range: All substitutes support the -55°C to 175°C operating range, ensuring thermal compatibility across applications.

Parameter Comparison

Parameter	IPB04N03LAT	IRL3803STRLPBF	STB80NF03L-04T4	PSMN4R3-30BL,118	PSMN017-30BL,118
Manufacturer	Infineon	Infineon	STMicroelectronics	Nexperia	Nexperia
Vdss (V)	25	30	30	30	30
Id @ 25°C (A)	80	140	80	100	32
Rds On Max (mOhm)	3.9 @ 55A, 10V	6 @ 71A, 10V	4 @ 40A, 10V	4.1 @ 15A, 10V	17 @ 10A, 10V
Vgs th Max (V)	2 @ 60µA	1 @ 250µA	1 @ 250µA	2.15 @ 1mA	2.15 @ 1mA
Qg Max (nC)	32 @ 5V	140 @ 4.5V	110 @ 4.5V	41.5 @ 10V	10.7 @ 10V
Power Dissipation Max (W)	107 (Tc)	200 (Tc)	300 (Tc)	103 (Tc)	47 (Tc)
Operating Temp Range (°C)	-55 to 175	-55 to 175	-60 to 175	-55 to 175	-55 to 175
Package	D2PAK	D2PAK	D2PAK	D2PAK	D2PAK
Product Status	Obsolete	Not For New Designs	Obsolete	Active	Obsolete
RoHS Status	Not specified	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Primary Recommendation: PSMN4R3-30BL,118

The PSMN4R3-30BL,118 from Nexperia is the preferred substitute for the IPB04N03LAT. This device maintains Active product status, ensuring long-term availability and manufacturing support. It provides 100A continuous drain current, exceeding the original 80A specification, with comparable on-state resistance of 4.1mOhm. The part is ROHS3 compliant and carries full regulatory compliance. The 30V Vdss rating provides adequate voltage margin above the 25V requirement.

Secondary Recommendation: STB80NF03L-04T4

The STB80NF03L-04T4 from STMicroelectronics matches the original 80A current rating with 4mOhm on-state resistance and superior power dissipation capability (300W). However, this part is classified as Obsolete, limiting its suitability for new designs or long-term production support. It remains suitable for legacy system maintenance where existing inventory exists.

Alternative Recommendation: IRL3803STRLPBF

The IRL3803STRLPBF from Infineon offers the highest current capability at 140A with 200W power dissipation. This part is classified as Not For New Designs, indicating limited future availability. It is suitable only when higher current capacity is required and existing inventory is available.

Not Recommended: PSMN017-30BL,118

The PSMN017-30BL,118 provides only 32A continuous drain current, significantly below the original 80A specification. While it maintains D2PAK packaging and ROHS3 compliance, its reduced current capacity makes it unsuitable as a direct substitute for the IPB04N03LAT.

Frequently Asked Questions (FAQ)

Q: Can I use a 30V rated MOSFET to replace a 25V rated device?

A: Yes. A higher voltage rating provides design margin and does not compromise functionality in circuits designed for 25V operation. All substitute parts feature 30V Vdss ratings, which are compatible with 25V circuit designs.

Q: What is the significance of on-state resistance (Rds On) in substitution?

A: Rds On directly affects power dissipation and thermal performance. The IPB04N03LAT specifies 3.9mOhm maximum. Substitutes with comparable or lower Rds On values (STB80NF03L-04T4 at 4mOhm, PSMN4R3-30BL,118 at 4.1mOhm) maintain equivalent thermal characteristics. Higher Rds On values result in increased heat generation.

Q: Why is product status important in selecting a substitute?

A: Product status indicates manufacturing support and long-term availability. Active status (PSMN4R3-30BL,118) ensures continued production and supply chain stability. Obsolete or Not For New Designs status indicates limited future availability and should be avoided for new designs requiring long-term support.

Q: Are all substitutes mechanically compatible with the original D2PAK footprint?

A: Yes. All identified substitutes use the D2PAK (TO-263-3) Surface Mount package, ensuring direct mechanical and thermal interface compatibility with existing PCB designs.

Q: What is the impact of gate charge (Qg) differences on circuit performance?

A: Gate charge affects switching speed and gate drive circuit requirements. The IPB04N03LAT specifies 32nC at 5V. Substitutes range from 10.7nC to 140nC. Higher gate charge requires more gate drive current and may slow switching speed. Lower gate charge enables faster switching with reduced gate drive requirements.

Q: Does the 30V rating affect circuit design or require modifications?

A: No design modifications are required. The 30V rating is a maximum specification. Circuits designed for 25V operation function identically with 30V-rated devices. The higher rating provides additional voltage margin for transient protection.

Q: What compliance certifications should I verify for my application?

A: All substitute parts carry ROHS3 compliance and REACH Unaffected status, matching the original part's regulatory profile. Verify ECCN (EAR99) and HTSUS (8541.29.0095) classifications match your export or procurement requirements.

Q: Can I use PSMN017-30BL,118 as a substitute despite its lower current rating?

A: Only if your application requires less than 32A continuous drain current. The IPB04N03LAT is rated for 80A, so PSMN017-30BL,118 is unsuitable for applications requiring the full 80A capability.

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