IPAW70R950CEXKSA1 Equivalent & Substitute Parts

Part Overview

The IPAW70R950CEXKSA1 is an N-Channel 700V 7.4A MOSFET manufactured by Infineon Technologies in the CoolMOS™ CE series. This device is rated for 68W power dissipation and features a TO-220-3 through-hole package. The part is currently classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing design support and procurement.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	700	V
Continuous Drain Current (Id) @ 25°C	7.4	A
Rds On (Max) @ 1.5A, 10V	950	mOhm
Gate Threshold Voltage (Vgs(th)) @ 150µA	3.5	V
Power Dissipation (Max)	68	W
Operating Temperature Range	-40 to 150	°C
Package Type	TO-220-3	Through Hole
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitution eligibility for the IPAW70R950CEXKSA1 is determined by the following critical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): Must equal or exceed 700V
Continuous Drain Current (Id): Must equal or exceed 7.4A at 25°C
On-State Resistance (Rds On): Must not exceed 950mOhm at specified gate voltage
Package Type: Must be TO-220-3 through-hole configuration
FET Type: N-Channel only
Technology: MOSFET (Metal Oxide)

Secondary Compatibility Factors:

Gate Threshold Voltage (Vgs(th)): Operating range compatibility
Power Dissipation: Thermal management capability
Operating Temperature Range: Must support -40°C to 150°C minimum

The substitute parts listed below meet the electrical and mechanical requirements for direct replacement in applications designed for the IPAW70R950CEXKSA1.

Parameter Comparison

Parameter	IPAW70R950CEXKSA1	IPA70R900P7SXKSA1	R6008FNX	STP9NK60ZFP
Manufacturer	Infineon Technologies	Infineon Technologies	Rohm Semiconductor	STMicroelectronics
Vdss (V)	700	700	600	600
Id @ 25°C (A)	7.4	6	8	7
Rds On (Max) @ 10V (mOhm)	950	900	950	950
Vgs(th) (Max) (V)	3.5	3.5	4	4.5
Power Dissipation (Max) (W)	68	20.5	50	30
Operating Temperature (°C)	-40 to 150	-40 to 150	to 150	-55 to 150
Package	TO-220-3	TO-220-3	TO-220-3	TO-220-3
Product Status	Obsolete	Active	Active	Active
RoHS Compliance	ROHS3	ROHS3	ROHS3	ROHS3

Engineering Selection Recommendations

IPA70R900P7SXKSA1 (Infineon Technologies)

This substitute is the primary equivalent for the IPAW70R950CEXKSA1. Both devices are manufactured by Infineon Technologies and share identical voltage ratings (700V Vdss) and gate threshold specifications (3.5V). The IPA70R900P7SXKSA1 belongs to the active CoolMOS™ P7 series and maintains ROHS3 compliance. The continuous drain current is reduced to 6A and power dissipation to 20.5W, which represents a design trade-off. This part is suitable for applications where the lower current and power ratings are acceptable within the circuit design margins.

R6008FNX (Rohm Semiconductor)

This substitute operates at a reduced voltage rating of 600V Vdss, which is 100V lower than the original specification. The continuous drain current is 8A, exceeding the original 7.4A requirement. On-state resistance matches at 950mOhm. This part is suitable only for applications where 600V voltage rating is sufficient and where the circuit design does not require the full 700V capability. The device maintains ROHS3 compliance and active product status.

STP9NK60ZFP (STMicroelectronics)

This substitute also operates at 600V Vdss, representing a voltage derating from the original 700V specification. The continuous drain current is 7A, which is within 0.4A of the original 7.4A rating. On-state resistance is 950mOhm. The STP9NK60ZFP is part of the active SuperMESH™ series with extended temperature range (-55°C to 150°C) and maintains ROHS3 compliance. This part is suitable for applications where 600V voltage rating is acceptable and where the extended lower temperature range provides additional operational margin.

All substitute parts maintain TO-220-3 through-hole packaging, N-Channel FET type, and MOSFET metal oxide technology. Selection should be based on specific application voltage requirements and thermal design constraints.

Frequently Asked Questions (FAQ)

Q: Can the IPA70R900P7SXKSA1 directly replace the IPAW70R950CEXKSA1 in all applications?

A: The IPA70R900P7SXKSA1 maintains the same 700V voltage rating and 3.5V gate threshold as the original part. However, the continuous drain current is reduced from 7.4A to 6A, and power dissipation is reduced from 68W to 20.5W. Direct replacement is possible only if the application circuit operates within these reduced current and power specifications.

Q: Why do the R6008FNX and STP9NK60ZFP have lower voltage ratings?

A: The R6008FNX and STP9NK60ZFP are rated for 600V Vdss, which is 100V lower than the original IPAW70R950CEXKSA1 specification of 700V. These parts are suitable only for applications where the circuit design does not require the full 700V blocking capability. Voltage derating must be evaluated against the specific application requirements.

Q: Are all substitute parts available in the same TO-220-3 package?

A: Yes. All substitute parts listed are available in TO-220-3 through-hole packaging, ensuring mechanical and thermal interface compatibility with the original design. Pinout configuration remains consistent across all alternatives.

Q: What is the significance of product status (Active vs. Obsolete)?

A: The IPAW70R950CEXKSA1 is classified as obsolete, meaning it is no longer manufactured and procurement may become difficult. All substitute parts listed are classified as active products, ensuring ongoing availability and manufacturing support from their respective manufacturers.

Q: Do all substitute parts meet RoHS3 compliance?

A: Yes. All substitute parts, including the original IPAW70R950CEXKSA1, are ROHS3 compliant. This ensures compatibility with environmental and regulatory requirements for electronic component manufacturing and use.

Q: How does on-state resistance affect circuit performance?

A: On-state resistance (Rds On) directly affects power dissipation and switching losses. All listed substitute parts maintain a maximum Rds On of 950mOhm at 10V gate drive, matching the original specification. This ensures equivalent conduction losses in the on-state condition.

Q: What is the impact of different gate threshold voltages?

A: Gate threshold voltage (Vgs(th)) determines the minimum gate voltage required to turn the device on. The IPA70R900P7SXKSA1 matches the original at 3.5V, while R6008FNX and STP9NK60ZFP are rated at 4V and 4.5V respectively. Higher threshold voltages may require adjustment to gate drive circuits in some applications.

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