IPAW60R190CEXKSA1 N-Channel 600V 26.7A MOSFET Equivalent & Substitute Parts

Part Overview

The IPAW60R190CEXKSA1 is an N-Channel 600V 26.7A MOSFET manufactured by Infineon Technologies in the CoolMOS™ series. This device is rated for continuous drain current of 26.7A at 25°C with a maximum on-resistance of 190mOhm at 9.5A and 10V gate-source voltage. The part is mounted in a TO-220-3 Full Pack through-hole package and is compliant with RoHS3 and REACH regulations.

The IPAW60R190CEXKSA1 is classified as Obsolete. Equivalent and substitute parts are necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements. Substitute devices must maintain electrical compatibility within the specified parameter ranges while accommodating minor variations in performance characteristics.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	26.7	A
On-Resistance (Rds On Max) @ 9.5A, 10V	190	mOhm
Gate-Source Threshold Voltage (Vgs(th)) @ 630µA	3.5	V
Gate Charge (Qg) @ 10V	63	nC
Input Capacitance (Ciss) @ 100V	1400	pF
Power Dissipation (Max)	34	W
Operating Temperature Range	-40 to 150	°C
Package Type	TO-220-3 Full Pack	—
Mounting Type	Through Hole	—
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—

Substitute Part Grouping Explanation

Substitute parts for the IPAW60R190CEXKSA1 are selected based on the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-Source Voltage (Vdss): 600V or higher
Continuous Drain Current (Id): 18A or higher at 25°C
On-Resistance (Rds On): 150mOhm to 200mOhm at 10V gate-source voltage
Gate-Source Threshold Voltage (Vgs(th)): 3.5V to 5V
Package Type: TO-220-3 Full Pack (through-hole mounting)
Operating Temperature Range: Minimum -40°C to 150°C or -55°C to 150°C

Substitution Logic: Devices meeting these criteria maintain functional equivalence in high-voltage switching applications. Variations in gate charge, input capacitance, and power dissipation are acceptable within the specified ranges, as these parameters do not prevent direct substitution in standard switching topologies. All substitute parts listed are compliant with RoHS3 and REACH regulations.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On Max (mOhm)	Vgs(th) (V)	Qg @ 10V (nC)	Ciss @ 100V (pF)	Pd Max (W)	Tj Range (°C)	Package	Status
IPAW60R190CEXKSA1	Infineon	600	26.7	190	3.5	63	1400	34	-40 to 150	TO-220-3	Obsolete
IPAW60R180P7SXKSA1	Infineon	650	18	180	4	25	1081	26	-55 to 150	TO-220-3	Not For New Designs
FCPF150N65F	onsemi	650	14.9	150	5	94	3737	39	-55 to 150	TO-220-3	Not For New Designs
FCPF190N60E	onsemi	600	20.6	190	3.5	82	3175	39	-55 to 150	TO-220-3	Not For New Designs
IXKP20N60C5M	IXYS	600	7.6	200	3.5	30	1520	—	-55 to 150	TO-220-3	Active
SIHA22N60AE-E3	Vishay Siliconix	600	20	180	4	96	1451	33	-55 to 150	TO-220-3	Active
STF21N65M5	STMicroelectronics	650	17	190	5	50	1950	30	-55 to 150	TO-220-3	Active
STF23NM60ND	STMicroelectronics	600	19.5	180	5	70	2050	35	-55 to 150	TO-220-3	Active
STF25N60M2-EP	STMicroelectronics	600	18	188	4.75	29	1090	30	-55 to 150	TO-220-3	Active
STF31N65M5	STMicroelectronics	650	22	148	5	45	816	30	-55 to 150	TO-220-3	Active

Engineering Selection Recommendations

Primary Recommendation for Direct Substitution:

SIHA22N60AE-E3 (Vishay Siliconix) is the preferred substitute. This device maintains 600V Vdss rating, delivers 20A continuous drain current, and features 180mOhm on-resistance at 10V gate-source voltage. The part is Active status, ensuring long-term availability and supply chain stability. RoHS3 and REACH compliance are confirmed. Operating temperature range extends to -55°C, providing enhanced thermal margin.

Secondary Recommendations:

STF25N60M2-EP (STMicroelectronics) provides equivalent electrical performance with 600V Vdss, 18A continuous drain current, and 188mOhm on-resistance. This part is Active status with confirmed RoHS3 compliance and extended temperature range (-55°C to 150°C). The MDmesh™ M2-EP technology offers optimized gate charge characteristics (29nC).

STF23NM60ND (STMicroelectronics) operates at 600V Vdss with 19.5A continuous drain current and 180mOhm on-resistance. Active status with RoHS3 compliance. FDmesh™ II technology provides balanced performance across switching and conduction losses.

Higher Voltage Alternatives (650V Vdss):

STF31N65M5 (STMicroelectronics) offers 650V Vdss rating with 22A continuous drain current and superior on-resistance of 148mOhm. Active status with RoHS3 compliance. Suitable for applications requiring higher voltage margin.

STF21N65M5 (STMicroelectronics) provides 650V Vdss with 17A continuous drain current and 190mOhm on-resistance. Active status with RoHS3 compliance. MDmesh™ V technology.

Not Recommended for New Designs:

IPAW60R180P7SXKSA1, FCPF150N65F, and FCPF190N60E are classified as "Not For New Designs" and should be used only for legacy system maintenance or repair applications where exact compatibility is required.

Current-Limited Alternative:

IXKP20N60C5M (IXYS) is Active status but delivers only 7.6A continuous drain current, significantly below the main part specification. This device is suitable only for applications with reduced current requirements.

Frequently Asked Questions (FAQ)

Q1: Can I use a substitute part with higher Vdss rating (650V) in place of the 600V IPAW60R190CEXKSA1?

A: Yes. Higher voltage-rated devices (650V Vdss) are electrically compatible with 600V applications. The higher voltage rating provides additional safety margin and does not degrade circuit performance. All 650V alternatives listed maintain equivalent on-resistance and current ratings.

Q2: What is the significance of on-resistance (Rds On) matching?

A: On-resistance directly determines conduction losses and heat dissipation in switching applications. The IPAW60R190CEXKSA1 specifies 190mOhm maximum. Substitute parts with Rds On values between 150mOhm and 200mOhm maintain equivalent thermal performance. Lower on-resistance reduces power dissipation; higher values increase heat generation proportionally.

Q3: Are all substitute parts pin-compatible with the original IPAW60R190CEXKSA1?

A: Yes. All listed substitutes use the TO-220-3 Full Pack package with identical pin configuration (Gate, Drain, Source). Physical mounting and PCB layout remain unchanged. No circuit board modifications are required.

Q4: What is the difference between "Obsolete" and "Not For New Designs" product status?

A: Obsolete parts are no longer manufactured and have limited remaining inventory. "Not For New Designs" parts are still produced but manufacturers recommend against using them in new product development. For legacy system support, either status is acceptable. For new designs, select only Active status parts.

Q5: Does gate charge (Qg) variation affect circuit performance?

A: Gate charge influences gate drive circuit design and switching speed. The IPAW60R190CEXKSA1 specifies 63nC. Substitutes range from 25nC to 96nC. Variations within this range are accommodated by standard gate drive circuits. Significantly lower gate charge (25-30nC) reduces drive power requirements; higher values (82-96nC) require slightly more drive current but do not prevent substitution.

Q6: Why do some substitutes have higher input capacitance (Ciss)?

A: Input capacitance affects gate drive circuit impedance and switching transient behavior. The IPAW60R190CEXKSA1 specifies 1400pF at 100V. Substitutes range from 816pF to 3737pF. Higher capacitance increases gate charge requirements but does not prevent direct substitution in standard switching topologies. Gate drive circuits designed for the original part accommodate these variations.

Q7: Can I use IXKP20N60C5M as a direct replacement?

A: No. IXKP20N60C5M delivers only 7.6A continuous drain current, compared to 26.7A for the IPAW60R190CEXKSA1. This device is suitable only for applications with significantly reduced current requirements. For equivalent current handling, select SIHA22N60AE-E3, STF25N60M2-EP, or STF23NM60ND.

Q8: Are there any compliance or regulatory differences between substitute parts?

A: All listed substitutes are RoHS3 compliant and REACH unaffected. Moisture Sensitivity Level (MSL) is 1 (Unlimited) for all parts, indicating no special moisture handling requirements. ECCN and HTSUS classifications are identical across all devices.

Q9: What is the recommended substitute for applications requiring the lowest on-resistance?

A: STF31N65M5 offers the lowest on-resistance at 148mOhm (compared to 190mOhm for the original part). This device operates at 650V Vdss with 22A continuous drain current. Lower on-resistance reduces conduction losses and heat dissipation, making it suitable for high-efficiency applications.

Q10: Which substitute offers the best long-term supply chain availability?

A: SIHA22N60AE-E3 (Vishay Siliconix) and STF25N60M2-EP (STMicroelectronics) are both Active status with confirmed inventory levels exceeding 2000 units. These parts represent the most reliable long-term sourcing options for production applications.

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