IPA65R420CFDXKSA1 N-Channel 650V 8.7A MOSFET Equivalent & Substitute Parts

Part Overview

The IPA65R420CFDXKSA1 is an N-Channel 650V 8.7A MOSFET manufactured by Infineon Technologies in the CoolMOS™ series. This device is rated for 31.2W power dissipation and features a maximum on-resistance of 420mOhm at 3.4A and 10V gate drive. The part is packaged in TO-220-3 through-hole configuration.

The IPA65R420CFDXKSA1 carries an Obsolete product status. Equivalent and substitute parts are necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements. Active alternatives with comparable electrical and mechanical specifications are available from multiple manufacturers.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	650	V
Continuous Drain Current (Id) @ 25°C	8.7	A (Tc)
On-Resistance (Rds On Max) @ Id, Vgs	420	mOhm @ 3.4A, 10V
Gate Threshold Voltage (Vgs(th) Max) @ Id	4.5	V @ 340µA
Gate Charge (Qg Max) @ Vgs	32	nC @ 10V
Input Capacitance (Ciss Max) @ Vds	870	pF @ 100V
Power Dissipation (Max)	31.2	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Through Hole	—
Package / Case	TO-220-3	—
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution eligibility for the IPA65R420CFDXKSA1 is determined by the following critical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): 650V (exact match required)
Continuous Drain Current (Id) @ 25°C: minimum 8.7A
On-Resistance (Rds On): maximum 420mOhm at specified gate drive conditions
Package Type: TO-220-3 through-hole configuration
Operating Temperature Range: -55°C to 150°C (TJ)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)

Secondary Compatibility Parameters:

Gate Threshold Voltage (Vgs(th)): within ±20V maximum gate voltage specification
Gate Charge (Qg): lower values acceptable (improved switching performance)
Input Capacitance (Ciss): comparable values acceptable
Power Dissipation: minimum 31.2W at case temperature
RoHS and MSL compliance: ROHS3 Compliant, MSL 1 (Unlimited)

Substitute parts meeting these criteria maintain functional equivalence in applications requiring 650V blocking voltage, 8.7A continuous drain current, and TO-220-3 through-hole mounting. Parts with higher current ratings or lower on-resistance values are acceptable as direct substitutes.

Parameter Comparison

Parameter	IPA65R420CFDXKSA1	IPA65R420CFDXKSA2	AOTF11S65L	AOTF18N65	STF12N65M5	STF16N65M2
Manufacturer	Infineon	Infineon	Alpha & Omega	Alpha & Omega	STMicroelectronics	STMicroelectronics
Vdss (V)	650	650	650	650	650	650
Id @ 25°C (A)	8.7	8.7	11	18	8.5	11
Rds On Max (mOhm)	420 @ 3.4A, 10V	420 @ 3.4A, 10V	399 @ 5.5A, 10V	390 @ 9A, 10V	430 @ 4.3A, 10V	360 @ 5.5A, 10V
Vgs(th) Max (V)	4.5 @ 340µA	4.5 @ 300µA	4 @ 250µA	4.5 @ 250µA	5 @ 250µA	4 @ 250µA
Qg Max (nC)	32 @ 10V	31.5 @ 10V	13.2 @ 10V	68 @ 10V	22 @ 10V	19.5 @ 10V
Ciss Max (pF)	870 @ 100V	870 @ 100V	646 @ 100V	3785 @ 25V	900 @ 100V	718 @ 100V
Power Dissipation Max (W)	31.2	31.2	31	50	25	25
Operating Temp Range (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	to 150	-55 to 150
Package	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-5	TO-220-3
Product Status	Obsolete	Active	Active	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
MSL	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

Primary Recommendation: IPA65R420CFDXKSA2

The IPA65R420CFDXKSA2 is the direct successor to the IPA65R420CFDXKSA1 within the Infineon CoolMOS™ CFD2 series. This part maintains identical electrical specifications (650V, 8.7A, 420mOhm Rds On) and mechanical compatibility (TO-220-3 through-hole). The IPA65R420CFDXKSA2 carries Active product status and is ROHS3 Compliant with MSL 1 (Unlimited). This part is available in Tube packaging with 1428 units in stock.

Secondary Recommendations: STMicroelectronics MDmesh™ Series

STF12N65M5 and STF16N65M2 are active alternatives from STMicroelectronics. Both parts meet the 650V Vdss requirement and maintain TO-220 through-hole mounting. STF12N65M5 provides 8.5A continuous drain current with 430mOhm Rds On, closely matching the original specification. STF16N65M2 offers higher performance with 11A continuous drain current and 360mOhm Rds On. Both are ROHS3 Compliant with MSL 1 (Unlimited) and carry Active product status. STF16N65M2 is available with 21300 units in stock.

Alternative Recommendation: Alpha & Omega AOTF11S65L

The AOTF11S65L provides 650V blocking voltage with 11A continuous drain current and 399mOhm Rds On. This part is packaged in TO-220-3 through-hole configuration, is ROHS3 Compliant with MSL 1 (Unlimited), and carries Active product status. The AOTF11S65L is available with 6030 units in stock.

Not Recommended for New Designs:

FCPF7N60 (onsemi SuperFET™) operates at 600V Vdss, which does not meet the 650V requirement of the original specification. This part carries "Not For New Designs" product status and is not suitable for direct substitution.

Not Recommended:

TK560A60Y,S4X and TK7A60W,S4VX (Toshiba DTMOS series) operate at 600V Vdss, which does not meet the 650V blocking voltage requirement. These parts are not suitable substitutes.

Frequently Asked Questions (FAQ)

Q: Can I use a 600V MOSFET as a substitute for the IPA65R420CFDXKSA1?

A: No. The IPA65R420CFDXKSA1 requires 650V blocking voltage (Vdss). Substituting a 600V device reduces the maximum voltage the transistor can withstand and violates the electrical specification. Parts such as FCPF7N60, TK560A60Y,S4X, and TK7A60W,S4VX operate at 600V and are not acceptable substitutes.

Q: What is the difference between IPA65R420CFDXKSA1 and IPA65R420CFDXKSA2?

A: Both parts share identical electrical specifications (650V, 8.7A, 420mOhm Rds On) and TO-220-3 through-hole packaging. The primary difference is product status: IPA65R420CFDXKSA1 is Obsolete, while IPA65R420CFDXKSA2 is Active. IPA65R420CFDXKSA2 is the recommended direct replacement and is available in higher quantities.

Q: Can I use STF16N65M2 instead of IPA65R420CFDXKSA1?

A: Yes. STF16N65M2 meets all primary substitution criteria: 650V Vdss, 11A continuous drain current (exceeds 8.7A requirement), 360mOhm Rds On (lower than 420mOhm maximum), TO-220-3 through-hole mounting, -55°C to 150°C operating temperature range, ROHS3 Compliant, and MSL 1 (Unlimited). The higher current rating and lower on-resistance provide improved performance characteristics.

Q: What is the difference between TO-220-3 and TO-220-5 packaging?

A: TO-220-3 and TO-220-5 refer to the number of leads. TO-220-3 has three leads (Gate, Drain, Source), while TO-220-5 has five leads. STF12N65M5 is packaged in TO-220-5 configuration. Verify PCB footprint compatibility before selecting this part as a substitute.

Q: Are all substitute parts RoHS3 Compliant?

A: Yes. All substitute parts listed (IPA65R420CFDXKSA2, AOTF11S65L, AOTF18N65, STF12N65M5, STF16N65M2) are ROHS3 Compliant with MSL 1 (Unlimited). This ensures compliance with environmental and regulatory requirements.

Q: What does "Active" product status mean?

A: Active product status indicates the part is currently in production and available for new designs. Obsolete status (IPA65R420CFDXKSA1) indicates the part is no longer manufactured. Active alternatives ensure long-term supply chain availability and support for ongoing production.

Q: Can I use AOTF18N65 as a substitute?

A: Yes, with consideration. AOTF18N65 meets all primary substitution criteria: 650V Vdss, 18A continuous drain current (significantly exceeds 8.7A), 390mOhm Rds On (lower than 420mOhm), TO-220-3 through-hole mounting, and full compliance certifications. However, the higher current rating and power dissipation (50W vs. 31.2W) indicate this part is designed for higher-power applications. Verify thermal management and circuit requirements before selection.

Q: What is Gate Charge (Qg) and why does it matter for substitution?

A: Gate Charge (Qg) represents the total charge required to switch the MOSFET from off to on state. Lower gate charge values indicate faster switching and reduced driver power requirements. Substitute parts with lower Qg values (such as AOTF11S65L at 13.2nC) provide improved switching performance compared to the original 32nC specification. This is an acceptable improvement for substitution purposes.

Q: Are there any thermal considerations when substituting these parts?

A: Yes. Power dissipation ratings vary among substitutes: IPA65R420CFDXKSA2 (31.2W), AOTF11S65L (31W), STF12N65M5 (25W), and STF16N65M2 (25W). Verify that thermal management (heatsinking, PCB layout) accommodates the selected part's power dissipation rating. Lower power dissipation ratings may require improved thermal design to maintain safe operating temperatures.

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