IPA65R190CFDXKSA1 N-Channel 650V 17.5A MOSFET Equivalent & Substitute Parts

Part Overview

The IPA65R190CFDXKSA1 is an N-Channel 650V 17.5A MOSFET manufactured by Infineon Technologies in the CoolMOS™ series. This device is rated for continuous drain current of 17.5A at 25°C with a maximum drain-source voltage of 650V and on-state resistance of 190mOhm at specified conditions. The part is housed in a TO-220-3 through-hole package and is compliant with RoHS3 standards.

The IPA65R190CFDXKSA1 has been discontinued at DiGi Electronics. Equivalent and substitute parts are available from multiple manufacturers including onsemi, IXYS, Rohm Semiconductor, Vishay Siliconix, STMicroelectronics, and Toshiba Semiconductor. These alternatives maintain functional compatibility within defined electrical and mechanical parameter ranges.

Key Parameters

Parameter	Value	Unit
Drain-Source Voltage (Vdss)	650	V
Continuous Drain Current (Id) @ 25°C	17.5	A (Tc)
On-State Resistance (Rds On Max) @ Id, Vgs	190 mOhm @ 7.3A, 10V	mOhm
Gate-Source Threshold Voltage (Vgs(th) Max) @ Id	4.5	V @ 730µA
Gate Charge (Qg Max) @ Vgs	68	nC @ 10V
Maximum Gate-Source Voltage (Vgs Max)	±20	V
Input Capacitance (Ciss Max) @ Vds	1850	pF @ 100V
Power Dissipation (Max)	34	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Through Hole	—
Package	TO-220-3	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the IPA65R190CFDXKSA1 is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-Source Voltage (Vdss): 600V or 650V
Continuous Drain Current (Id): 7.6A to 30A
On-State Resistance (Rds On): 150mOhm to 200mOhm range
Gate-Source Threshold Voltage (Vgs(th)): 3.5V to 5V
Gate Charge (Qg): 30nC to 96nC
Maximum Gate-Source Voltage (Vgs Max): ±20V to ±30V
Operating Temperature: -55°C to 150°C
Mounting Type: Through Hole
Package: TO-220-3 Full Pack

Substitution Logic: Parts with Vdss of 600V are acceptable substitutes for the 650V rated main part in applications where the lower voltage rating is sufficient. Parts with higher continuous drain current ratings (20A to 30A) provide additional current margin. On-state resistance values within ±20% of the main part specification maintain similar thermal and switching characteristics. Gate charge values between 30nC and 96nC ensure compatible gate drive requirements. All substitute parts maintain the same through-hole mounting and TO-220-3 package format for direct PCB compatibility.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On Max (mOhm)	Vgs(th) Max (V)	Qg Max (nC)	Vgs Max (±V)	Ciss Max (pF)	Pd Max (W)	Package	Status
IPA65R190CFDXKSA1	Infineon	650	17.5	190 @ 7.3A, 10V	4.5 @ 730µA	68 @ 10V	20	1850 @ 100V	34	TO-220-3	Discontinued
FCPF190N60E	onsemi	600	20.6	190 @ 10A, 10V	3.5 @ 250µA	82 @ 10V	20	3175 @ 25V	39	TO-220-3	Not For New Designs
IXKP20N60C5M	IXYS	600	7.6	200 @ 10A, 10V	3.5 @ 1.1mA	30 @ 10V	20	1520 @ 100V	—	TO-220-3	Active
R6030MNX	Rohm Semiconductor	600	30	150 @ 15A, 10V	5 @ 1mA	43 @ 10V	30	2180 @ 25V	90	TO-220-3	Active
SIHA22N60AE-E3	Vishay Siliconix	600	20	180 @ 11A, 10V	4 @ 250µA	96 @ 10V	30	1451 @ 100V	33	TO-220-3	Active
STF23NM60ND	STMicroelectronics	600	19.5	180 @ 10A, 10V	5 @ 250µA	70 @ 10V	25	2050 @ 50V	35	TO-220-3	Active
STF26N60M2	STMicroelectronics	600	20	165 @ 11A, 10V	4 @ 250µA	—	25	—	30	TO-220-3	Active
STF28N60M2	STMicroelectronics	600	24	150 @ 12A, 10V	4 @ 250µA	37 @ 10V	25	1370 @ 100V	30	TO-220-3	Active
STF31N65M5	STMicroelectronics	650	22	148 @ 11A, 10V	5 @ 250µA	45 @ 10V	25	816 @ 100V	30	TO-220-3	Active
TK16A60W,S4X	Toshiba Semiconductor	600	15.8	190 @ 7.9A, 10V	3.7 @ 790µA	40 @ 10V	30	1350 @ 300V	40	TO-220-3	Active

Engineering Selection Recommendations

For Direct Replacement with Matched Voltage Rating (650V):

STF31N65M5 from STMicroelectronics is the primary equivalent. This part maintains the same 650V drain-source voltage rating as the IPA65R190CFDXKSA1, provides higher continuous drain current (22A versus 17.5A), and features lower on-state resistance (148mOhm versus 190mOhm). The STF31N65M5 is in Active product status and carries full RoHS3 compliance. Gate charge of 45nC and input capacitance of 816pF @ 100V are within acceptable ranges for gate drive compatibility.

For Applications Accepting 600V Voltage Rating:

Multiple active alternatives are available with 600V Vdss ratings:

STF28N60M2 from STMicroelectronics offers 24A continuous drain current with 150mOhm on-state resistance, providing improved current handling and reduced conduction losses. This part is in Active status with RoHS3 compliance.

SIHA22N60AE-E3 from Vishay Siliconix provides 20A continuous drain current with 180mOhm on-state resistance, closely matching the thermal characteristics of the main part. This device is in Active status with RoHS3 compliance and MSL Level 1.

STF23NM60ND from STMicroelectronics delivers 19.5A continuous drain current with 180mOhm on-state resistance and is in Active status with RoHS3 compliance.

For Current-Limited Applications:

TK16A60W,S4X from Toshiba Semiconductor provides 15.8A continuous drain current with 190mOhm on-state resistance, matching the on-state resistance of the main part. This device is in Active status with RoHS Compliant certification.

IXKP20N60C5M from IXYS is suitable for lower current applications requiring 7.6A continuous drain current. This part is in Active status with RoHS3 compliance and features the lowest gate charge (30nC) among available substitutes.

For High Current Applications:

R6030MNX from Rohm Semiconductor supports 30A continuous drain current with 150mOhm on-state resistance and 90W power dissipation, providing significant current margin. This part is in Active status with RoHS3 compliance.

Product Status Considerations:

FCPF190N60E from onsemi is marked as "Not For New Designs" and should be avoided for new circuit development despite matching on-state resistance specifications.

All recommended active substitutes maintain through-hole mounting in TO-220-3 package format, ensuring direct PCB compatibility without layout modifications.

Frequently Asked Questions (FAQ)

Q: Can I use a 600V rated MOSFET to replace the 650V IPA65R190CFDXKSA1?

A: Yes, in applications where the circuit voltage does not exceed 600V. The 600V rated substitutes (FCPF190N60E, IXKP20N60C5M, R6030MNX, SIHA22N60AE-E3, STF23NM60ND, STF26N60M2, STF28N60M2, TK16A60W,S4X) are electrically compatible. However, if your circuit operates at voltages between 600V and 650V, only STF31N65M5 maintains the same 650V rating as the original part.

Q: What is the significance of on-state resistance (Rds On) matching?

A: On-state resistance directly determines conduction losses and junction temperature rise during operation. The IPA65R190CFDXKSA1 specifies 190mOhm maximum at 7.3A and 10V gate-source voltage. Substitute parts with Rds On values between 150mOhm and 200mOhm maintain similar thermal performance. Lower Rds On values (150mOhm) reduce power dissipation; higher values (200mOhm) increase it. Select based on your thermal design margin.

Q: Are all substitute parts compatible with my existing gate drive circuit?

A: Gate drive compatibility depends on gate charge (Qg) and gate-source threshold voltage (Vgs(th)). The main part specifies 68nC gate charge at 10V and 4.5V threshold voltage. All listed substitutes have gate charge between 30nC and 96nC and threshold voltages between 3.5V and 5V, which are compatible with standard gate drive circuits rated for ±20V or ±25V operation. Verify your gate driver specifications before substitution.

Q: Can I use a higher current rated MOSFET as a direct replacement?

A: Yes. Parts with higher continuous drain current ratings (20A to 30A) are direct replacements for the 17.5A main part. Higher current ratings provide additional design margin and do not create compatibility issues. R6030MNX (30A), FCPF190N60E (20.6A), SIHA22N60AE-E3 (20A), STF23NM60ND (19.5A), STF26N60M2 (20A), and STF28N60M2 (24A) all exceed the main part current rating.

Q: What about parts with lower current ratings?

A: IXKP20N60C5M (7.6A) and TK16A60W,S4X (15.8A) have lower continuous drain current ratings than the main part. These are suitable only if your application requires less than their rated current. Do not use lower-rated parts in circuits designed for the full 17.5A capability of the original device.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All listed substitute parts carry RoHS3 Compliant certification, matching the compliance status of the IPA65R190CFDXKSA1. FCPF190N60E, IXKP20N60C5M, R6030MNX, SIHA22N60AE-E3, STF23NM60ND, STF26N60M2, STF28N60M2, and STF31N65M5 are all ROHS3 Compliant. TK16A60W,S4X carries RoHS Compliant certification.

Q: What is the difference between TO-220-3 and TO-220FP or TO-220FM packages?

A: All substitute parts are housed in TO-220-3 Full Pack format, which is mechanically and electrically identical to the main part's TO-220-3 package. Variations in supplier device package designations (TO-220FP, TO-220FM, TO-220SIS) refer to manufacturer-specific package codes but maintain the same physical dimensions and pin configuration. Direct PCB substitution is possible without layout changes.

Q: Which substitute offers the best thermal performance?

A: STF28N60M2 and R6030MNX offer the lowest on-state resistance values (150mOhm) among 600V substitutes, resulting in the lowest conduction losses and junction temperature rise. STF31N65M5 combines 650V voltage rating with 148mOhm on-state resistance, providing optimal thermal performance while maintaining the original voltage rating.

Q: Can I use FCPF190N60E if it is marked "Not For New Designs"?

A: FCPF190N60E is electrically compatible but is designated "Not For New Designs" by onsemi. This status indicates the manufacturer is phasing out this part. For new circuit development, select from active status alternatives: STF28N60M2, STF31N65M5, STF23NM60ND, STF26N60M2, SIHA22N60AE-E3, R6030MNX, TK16A60W,S4X, or IXKP20N60C5M.

Q: What is the operating temperature range for all substitutes?

A: All substitute parts operate across the temperature range -55°C to 150°C (TJ), matching the main part specification. This ensures thermal compatibility across industrial and automotive temperature ranges.

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