Equivalent & Substitute Parts for IPA65R150CFDXKSA1

Part Overview

The IPA65R150CFDXKSA1 is an N-Channel 650V 22.4A MOSFET manufactured by Infineon Technologies in the CoolMOS™ series. This device is rated for 34.7W power dissipation and operates across a temperature range of -55°C to 150°C. The part is mounted in a TO-220-3 through-hole package and is classified as obsolete product status.

Due to the obsolete status of the IPA65R150CFDXKSA1, equivalent and substitute parts are necessary for ongoing production, maintenance, and new design implementations. Substitute devices must maintain electrical compatibility within the specified drain-source voltage, continuous drain current, and on-resistance parameters while accommodating packaging and availability constraints.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	650	V
Continuous Drain Current (Id) @ 25°C	22.4	A
On-Resistance (Rds On) @ 9.3A, 10V	150	mOhm
Gate Threshold Voltage (Vgs(th)) @ 1mA	4.5	V
Gate Charge (Qg) @ 10V	86	nC
Input Capacitance (Ciss) @ 100V	2340	pF
Power Dissipation (Max)	34.7	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-220-3	Through Hole
FET Type	N-Channel

Substitute Part Grouping Explanation

Substitution of the IPA65R150CFDXKSA1 is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): 650V or higher
Continuous Drain Current (Id): 22.4A or higher at 25°C
On-Resistance (Rds On): 150mOhm or lower at specified gate voltage
Gate Threshold Voltage (Vgs(th)): Within ±0.5V of 4.5V
Operating Temperature Range: -55°C to 150°C minimum
Package Type: TO-220-3 through-hole configuration
Mounting Type: Through Hole

Secondary Compatibility Factors:

Gate Charge (Qg): Lower values preferred for switching efficiency
Input Capacitance (Ciss): Lower values preferred for gate drive requirements
Power Dissipation: Equal or higher rating acceptable
RoHS3 Compliance: Required for regulatory alignment
Moisture Sensitivity Level: MSL 1 (Unlimited) preferred

Substitute parts are grouped into two categories:

Category A - Direct Equivalents (650V Rating): Parts maintaining the 650V Vdss specification with comparable current and on-resistance ratings. These include IPA65R150CFDXKSA2, SIHA24N65EF-E3, STF20N65M5, and STF31N65M5.

Category B - Functional Alternatives (600V Rating): Parts with 600V Vdss rating, which is acceptable for applications not requiring the full 650V margin. These include AOTF20S60L, IXKP20N60C5M, R6020KNX, STF24NM60N, and STF28N60M2.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Vgs(th) (V)	Qg (nC)	Ciss (pF)	Pd Max (W)	Package	Status
IPA65R150CFDXKSA1	Infineon	650	22.4	150	4.5	86	2340	34.7	TO-220-3	Obsolete
IPA65R150CFDXKSA2	Infineon	650	22.4	150	4.5	86	2340	34.7	TO-220-3	Active
SIHA24N65EF-E3	Vishay Siliconix	650	24	156	4	122	2774	39	TO-220-3	Active
STF20N65M5	STMicroelectronics	650	18	190	5	45	1345	30	TO-220-3	Active
STF31N65M5	STMicroelectronics	650	22	148	5	45	816	30	TO-220-3	Active
AOTF20S60L	Alpha & Omega Semiconductor	600	20	199	4.1	19.8	1038	37.8	TO-220-3	Not For New Designs
IXKP20N60C5M	IXYS	600	7.6	200	3.5	30	1520	—	TO-220-3	Active
R6020KNX	Rohm Semiconductor	600	20	196	5	40	1550	68	TO-220-3	Active
STF24NM60N	STMicroelectronics	600	17	190	4	46	1400	30	TO-220-3	Active
STF28N60M2	STMicroelectronics	600	24	150	4	37	1370	30	TO-220-3	Active
TK20A60W5,S5VX	Toshiba Semiconductor	600	20	175	4.5	55	1800	45	TO-220-3	Active

Engineering Selection Recommendations

Primary Recommendation: IPA65R150CFDXKSA2

The IPA65R150CFDXKSA2 is the direct successor to the IPA65R150CFDXKSA1. Both devices share identical electrical specifications including 650V Vdss, 22.4A continuous drain current, and 150mOhm on-resistance. The IPA65R150CFDXKSA2 maintains active product status and is available in higher inventory quantities (1273 units). This part is classified as CoolMOS™ CFD2 series and carries ROHS3 compliance with MSL 1 rating. The only difference is packaging designation (PG-TO220-FP versus PG-TO220-3-111), which does not affect electrical or mechanical compatibility in through-hole applications.

Secondary Recommendation: STF31N65M5

The STF31N65M5 from STMicroelectronics provides 650V Vdss with 22A continuous drain current, closely matching the original specification. On-resistance is 148mOhm at 11A, which is superior to the original 150mOhm specification. This part is active status with 1415 units in inventory. The MDmesh™ V series technology provides lower gate charge (45nC versus 86nC) and significantly lower input capacitance (816pF versus 2340pF), resulting in improved switching performance. ROHS3 compliance and MSL 1 rating are maintained.

Tertiary Recommendation: SIHA24N65EF-E3

The SIHA24N65EF-E3 from Vishay Siliconix maintains 650V Vdss with 24A continuous drain current, exceeding the original 22.4A specification. On-resistance is 156mOhm at 12A, marginally higher than the original. This part is active status with 809 units in inventory. The higher current rating provides design margin for thermal management. ROHS3 compliance and MSL 1 rating are maintained.

Alternative for 600V Applications: STF28N60M2

For applications where 600V Vdss is acceptable, the STF28N60M2 from STMicroelectronics provides 24A continuous drain current with 150mOhm on-resistance, matching the original on-resistance specification. This part is active status with 7526 units in inventory, providing superior availability. The MDmesh™ II Plus series offers lower gate charge (37nC) and comparable input capacitance (1370pF). ROHS3 compliance and MSL 1 rating are maintained.

Not Recommended: AOTF20S60L

The AOTF20S60L is classified as "Not For New Designs" and should not be selected for new applications despite electrical compatibility. This designation indicates the manufacturer has discontinued active support for this device.

Not Recommended: IXKP20N60C5M

The IXKP20N60C5M provides only 7.6A continuous drain current, which is insufficient for applications requiring the original 22.4A specification. This part is not suitable as a direct substitute.

Frequently Asked Questions (FAQ)

Q: Can the IPA65R150CFDXKSA2 be used as a direct replacement for the IPA65R150CFDXKSA1?

A: Yes. The IPA65R150CFDXKSA2 is electrically and mechanically identical to the IPA65R150CFDXKSA1. Both devices have 650V Vdss, 22.4A continuous drain current, and 150mOhm on-resistance. The primary difference is product status (Active versus Obsolete) and packaging designation. Both are mounted in TO-220-3 through-hole packages and are pin-compatible.

Q: What is the difference between 650V and 600V rated devices in terms of substitution?

A: The 650V rating provides a 50V margin above the 600V specification. For applications operating at or below 600V, 600V-rated devices are functionally acceptable. However, for applications requiring the full 650V capability, only 650V-rated substitutes (IPA65R150CFDXKSA2, SIHA24N65EF-E3, STF20N65M5, STF31N65M5) are appropriate.

Q: Why does the STF31N65M5 have lower gate charge than the original part?

A: The STF31N65M5 uses MDmesh™ V technology, which is a more recent semiconductor process than the CoolMOS™ technology in the original IPA65R150CFDXKSA1. Lower gate charge (45nC versus 86nC) results from improved device architecture and indicates faster switching capability with reduced gate drive power requirements.

Q: Is the higher input capacitance of the SIHA24N65EF-E3 a concern?

A: The SIHA24N65EF-E3 has input capacitance of 2774pF compared to 2340pF in the original part. This 18.6% increase requires proportionally higher gate drive current during switching transitions. For most applications using standard gate driver circuits, this difference is manageable. Applications with marginal gate drive capability should verify compatibility through simulation or testing.

Q: Can I use STF28N60M2 in a 650V application?

A: No. The STF28N60M2 is rated for 600V Vdss maximum. Using this device in a 650V application exceeds the device rating and creates risk of gate-drain breakdown. This part is suitable only for applications operating at 600V or below.

Q: What does "Not For New Designs" status mean for the AOTF20S60L?

A: "Not For New Designs" indicates the manufacturer (Alpha & Omega Semiconductor) has discontinued active development and support for this device. While the part may still be available from inventory, the manufacturer provides no guarantee of long-term availability or technical support. New designs should not incorporate this part.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed carry ROHS3 compliance certification. The original IPA65R150CFDXKSA1 also carries ROHS3 compliance, ensuring regulatory alignment across all options.

Q: What is the significance of MSL 1 (Unlimited) rating?

A: MSL 1 (Moisture Sensitivity Level 1) with Unlimited designation indicates the device has no moisture sensitivity restrictions. These parts do not require special moisture control during storage, handling, or assembly. Standard PCB assembly processes are applicable without additional precautions.

Q: How do I determine which substitute is best for my application?

A: Selection depends on three factors: (1) Required voltage rating (650V or 600V), (2) Required current capacity (minimum 22.4A for direct replacement), and (3) Availability and cost constraints. For voltage-critical applications, select from 650V-rated parts. For applications with 600V maximum operating voltage, 600V-rated parts provide cost and availability advantages. Verify gate drive circuit compatibility with the selected device's gate charge and input capacitance specifications.

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