Equivalent & Substitute Parts for IPA50R950CE

Part Overview

The IPA50R950CE is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 500V drain-to-source voltage with 4.3A continuous drain current at 25°C. This device is packaged in TO-220-3 Full Pack configuration and belongs to the CoolMOS™ series. The part is currently listed as obsolete, making identification of equivalent and substitute components essential for design continuity and procurement planning. Substitute parts must maintain compatibility across critical electrical parameters including voltage rating, current capacity, on-resistance characteristics, and thermal performance while accommodating the through-hole mounting requirement.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	500	V
Continuous Drain Current (Id) @ 25°C	4.3	A
Rds On (Max) @ Id, Vgs	950 mOhm @ 1.2A, 13V	mOhm
Gate Threshold Voltage Vgs(th) (Max) @ Id	3.5	V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	10.5	nC @ 10V
Power Dissipation (Max)	25.7	W
Operating Temperature Range	-40 to 150	°C
Package Type	TO-220-3 Full Pack	Through Hole
Product Status	Obsolete	N/A

Substitute Part Grouping Explanation

Substitution eligibility for the IPA50R950CE is determined by the following critical parameters:

Primary Compatibility Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 500V
Mounting Type: Must be Through Hole with TO-220-3 Full Pack configuration
FET Type: N-Channel MOSFET technology
Operating Temperature Range: Must support -40°C to 150°C minimum

Secondary Performance Criteria:

Continuous Drain Current (Id): Minimum 4.3A at 25°C
On-Resistance (Rds On): Performance at specified gate voltage and current
Gate Charge (Qg): Switching characteristics for circuit timing
Power Dissipation: Thermal management capability

The substitute parts listed below meet the primary compatibility criteria and maintain electrical performance within acceptable operating parameters for applications designed around the IPA50R950CE specifications.

Parameter Comparison

Parameter	IPA50R950CE	IPA50R950CEXKSA2	R5007FNX	STF7N60M2	STF8NM50N
Manufacturer	Infineon	Infineon	Rohm	STMicroelectronics	STMicroelectronics
Vdss (V)	500	500	500	600	500
Id @ 25°C (A)	4.3	3.7	7	5	5
Rds On (mOhm)	950 @ 1.2A, 13V	950 @ 1.2A, 13V	1300 @ 3.5A, 10V	950 @ 2.5A, 10V	790 @ 2.5A, 10V
Vgs(th) (V)	3.5 @ 100µA	3.5 @ 100µA	4 @ 1mA	4 @ 250µA	4 @ 250µA
Qg (nC)	10.5 @ 10V	10.5 @ 10V	15 @ 10V	8.8 @ 10V	14 @ 10V
Power Dissipation (W)	25.7	25.7	40	20	20
Operating Temp (°C)	-40 to 150	-40 to 150	to 150	-55 to 150	-55 to 150
Package	TO-220-3 Full Pack	TO-220-3 Full Pack	TO-220-3 Full Pack	TO-220-3 Full Pack	TO-220-3 Full Pack
Product Status	Obsolete	Active	Active	Active	Active
RoHS Status	N/A	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

IPA50R950CEXKSA2 (Infineon Technologies)

This part is the manufacturer-recommended direct substitute for the obsolete IPA50R950CE. Both devices share identical electrical specifications including 500V Vdss, 950 mOhm Rds On at 13V, and 10.5 nC gate charge. The primary difference is product status: IPA50R950CEXKSA2 is active and ROHS3 compliant, ensuring long-term availability and regulatory compliance. Continuous drain current is rated at 3.7A versus 4.3A on the original part. This substitute is appropriate for applications where the original part specifications are required and design margins accommodate the slightly lower current rating.

STF8NM50N (STMicroelectronics)

This device matches the 500V Vdss rating and provides 5A continuous drain current, exceeding the original 4.3A specification. On-resistance is 790 mOhm at 2.5A and 10V, providing superior performance compared to the 950 mOhm specification of IPA50R950CE. Operating temperature range extends to -55°C, providing enhanced low-temperature performance. This substitute is suitable for applications requiring improved thermal performance and current capacity while maintaining the 500V voltage rating.

R5007FNX (Rohm Semiconductor)

This part provides the highest current rating at 7A continuous drain current with 500V Vdss compatibility. Power dissipation capability reaches 40W, the highest among all substitutes. On-resistance is specified at 1.3 Ohm at 3.5A and 10V. This substitute is appropriate for applications requiring maximum current headroom and thermal capacity within the 500V voltage class.

STF7N60M2 (STMicroelectronics)

This device operates at 600V Vdss, providing 100V overvoltage margin relative to the original specification. Continuous drain current is 5A with 950 mOhm on-resistance at 2.5A and 10V. Operating temperature range extends to -55°C. This substitute is appropriate for applications where higher voltage margin is required or where circuit topology benefits from elevated voltage rating.

All substitute parts maintain TO-220-3 Full Pack through-hole mounting compatibility and are ROHS3 compliant with REACH unaffected status.

Frequently Asked Questions (FAQ)

Q: Can IPA50R950CEXKSA2 be used as a direct replacement for IPA50R950CE?

A: Yes. IPA50R950CEXKSA2 is the manufacturer-recommended substitute with identical electrical specifications. The primary difference is product status: IPA50R950CEXKSA2 is active and ROHS3 compliant. Continuous drain current is 3.7A versus 4.3A on the original part. Verify that application design margins accommodate this current difference.

Q: What is the key difference between the Infineon and STMicroelectronics substitutes?

A: IPA50R950CEXKSA2 maintains the exact electrical specifications of the obsolete IPA50R950CE, including 950 mOhm on-resistance and 10.5 nC gate charge. STF8NM50N and STF7N60M2 offer improved on-resistance (790 mOhm and 950 mOhm respectively) and extended operating temperature range to -55°C. STF7N60M2 provides 100V additional voltage margin at 600V Vdss.

Q: Are all substitute parts compatible with the original TO-220-3 Full Pack footprint?

A: Yes. All listed substitute parts use TO-220-3 Full Pack through-hole packaging, ensuring mechanical and thermal interface compatibility with existing PCB designs.

Q: Which substitute provides the best thermal performance?

A: R5007FNX offers the highest power dissipation rating at 40W. STF8NM50N and STF7N60M2 both provide 20W dissipation with superior on-resistance characteristics compared to the original 25.7W specification.

Q: What compliance certifications apply to the substitute parts?

A: All substitute parts are ROHS3 compliant and REACH unaffected. IPA50R950CEXKSA2, R5007FNX, STF7N60M2, and STF8NM50N all carry these certifications, ensuring regulatory compliance for new designs.

Q: Can R5007FNX be used in applications requiring exactly 500V Vdss?

A: Yes. R5007FNX is rated for 500V Vdss, matching the original specification. The 7A continuous drain current and 40W power dissipation provide performance margin above the original 4.3A and 25.7W ratings.

Q: What is the significance of gate charge (Qg) differences among substitutes?

A: Gate charge affects switching speed and driver circuit requirements. IPA50R950CE and IPA50R950CEXKSA2 specify 10.5 nC. STF7N60M2 specifies 8.8 nC (faster switching), while R5007FNX and STF8NM50N specify 15 nC and 14 nC respectively (slower switching). Verify driver circuit compatibility with the selected substitute.

Q: Is STF7N60M2 suitable for 500V applications?

A: STF7N60M2 is rated for 600V Vdss, providing 100V overvoltage margin. It is suitable for 500V applications and offers enhanced voltage safety margin. No circuit modification is required for voltage compatibility.

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