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Infineon IPA50R280CE Equivalent & Substitute Parts Reference
Part Overview
The Infineon Technologies IPA50R280CE is an N-Channel MOSFET in the 500V, 13A (Tc), TO-220-3 Full Pack through-hole package, designed for power switching applications. This device is part of the CoolMOS™ series and is classified as obsolete. Due to its obsolete status, sourcing new or replacement units is challenged, prompting the need for technically equivalent or substitute MOSFETs matching the essential electrical and mechanical parameters for continued system compatibility and function.
Substiute Parts
Key Parameters
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Category | Transistors, FETs, MOSFETs |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Vdss (Drain to Source Voltage) | 500 V |
| Id (Continuous Drain Current @ 25°C) | 13A (Tc) |
| Drive Voltage | 13V |
| Rds On (Max) | 280mOhm @ 4.2A, 13V |
| Vgs(th) (Max) @ Id | 3.5V @ 350µA |
| Gate Charge Qg (Max) @ Vgs | 32.6 nC @ 10 V |
| Vgs (Max) | ±20V |
| Ciss (Input Capacitance Max) @ Vds | 773 pF @ 100 V |
| Power Dissipation (Max) | 30.4W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO220-3-31 |
| Package / Case | TO-220-3 Full Pack |
| MSL | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
Substitute Part Grouping Explanation
Substitute MOSFETs for the IPA50R280CE are selected only if they match or exceed the following critical parameters:
- N-Channel, MOSFET technology
- Vdss ≥ 500 V
- Id (continuous drain current) similar or higher
- Rds(on) (max) at comparable test conditions
- Drive voltage and Vgs(max) compatibility
- Power dissipation (max) similar or higher
- Compatible through-hole/TO-220 variant full pack package or equivalent
- Compliance: RoHS, REACH, ECCN
Other operating and mechanical characteristics, such as gate charge, input capacitance, or temperature rating, must also fall within the original envelope or represent reasonable equivalence for similar system environments.
Parameter Comparison
| Parameter | IPA50R280CE (Infineon) |
IPA50R280CEXKSA2 (Infineon) |
FDPF18N50 (onsemi) |
FDPF18N50T (onsemi) |
FDPF20N50FT (onsemi) |
FDPF20N50T (onsemi) |
PJMF280N60E1_T0_00001 (Panjit) |
STF19NM50N (STMicro) |
TK18A50D(STA4,Q,M) (Toshiba) |
|---|---|---|---|---|---|---|---|---|---|
| Category | Transistors, FETs, MOSFETs | Transistors, FETs, MOSFETs | Transistors, FETs, MOSFETs | Transistors, FETs, MOSFETs | Transistors, FETs, MOSFETs | Transistors, FETs, MOSFETs | Transistors, FETs, MOSFETs | Transistors, FETs, MOSFETs | Transistors, FETs, MOSFETs |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Vdss | 500 V | 500 V | 500 V | 500 V | 500 V | 500 V | 600 V | 500 V | 500 V |
| Id (25°C) | 13A (Tc) | 7.5A (Tc) | 18A (Tc) | 18A (Tc) | 20A (Tc) | 20A (Tc) | 13.8A (Tc) | 14A (Tc) | 18A (Ta) |
| Drive Voltage | 13V | 13V | 10V | 10V | 10V | 10V | 10V | 10V | 10V |
| Rds On (Max) | 280mOhm @4.2A,13V |
280mOhm @4.2A,13V |
265mOhm @9A,10V |
265mOhm @9A,10V |
260mOhm @10A,10V |
230mOhm @10A,10V |
280mOhm @6.5A,10V |
250mOhm @7A,10V |
270mOhm @9A,10V |
| Vgs(th) (Max) | 3.5V @ 350µA | 3.5V @ 350µA | 5V @ 250µA | 5V @ 250µA | 5V @ 250µA | 5V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 1mA |
| Gate Charge Qg (Max) | 32.6 nC @ 10 V | 32.6 nC @ 10 V | 60 nC @ 10 V | 60 nC @ 10 V | 65 nC @ 10 V | 59.5 nC @ 10 V | 27 nC @ 10 V | 34 nC @ 10 V | 45 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V | ±30V | ±30V | ±30V | ±30V | ±30V | ±25V | ±30V |
| Ciss (Max) | 773 pF @ 100V | 773 pF @ 100V | 2860 pF @ 25V | 2860 pF @ 25V | 3390 pF @ 25V | 3120 pF @ 25V | 926 pF @ 400V | 1000 pF @ 50V | 2600 pF @ 25V |
| Power Dissipation (Max) | 30.4W (Tc) | 30.4W (Tc) | 38.5W (Tc) | 38.5W (Tc) | 38.5W (Tc) | 38.5W (Tc) | 34W (Tc) | 30W (Tc) | 50W (Tc) |
| Operating Temp. | -55°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | 150°C (TJ) | 150°C (TJ) |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole |
| Package | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack, Isolated Tab | TO-220-3 Full Pack | TO-220-3 Full Pack |
| MSL | 1 (Unlimited) | 1 (Unlimited) | Not Applicable | Not Applicable | Not Applicable | Not Applicable | Not Applicable | 1 (Unlimited) | 1 (Unlimited) |
| REACH Status | REACH Unaffected | REACH Unaffected | REACH Unaffected | REACH Unaffected | REACH Unaffected | REACH Unaffected | REACH Unaffected | REACH Unaffected | Not Listed |
| ECCN | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| Product Status | Obsolete | Active | Active | Active | Active | Active | Active | Active | Active |
Engineering Selection Recommendations
When selecting from these substitute MOSFETs for the Infineon IPA50R280CE, restriction to parts with “Active” status is necessary for sustained availability and supply assurance. All listed substitutes are RoHS and REACH compliant where indicated, with the same ECCN (EAR99), and Moisture Sensitivity Level (MSL 1 or Not Applicable). Only parts with matching or improved electrical ratings and compatible through-hole TO-220-3 Full Pack or equivalent package have been included based strictly on the provided data.
Frequently Asked Questions (FAQ)
Q1: What parameters are required for an N-channel MOSFET to replace the IPA50R280CE?
A1: Substitute MOSFETs must match or exceed the following: 500V or higher drain-to-source voltage (Vdss), continuous drain current (Id) at least equal to 13A (Tc), Rds(on) maximum 280mOhm or better at comparable test conditions, similar or compatible drive voltage/Vgs, power dissipation rating, through-hole TO-220-3 Full Pack package, and RoHS/REACH/ECCN compliance.
Q2: Are package differences critical in these MOSFET substitutions?
A2: All substitutes are supplied in through-hole, TO-220-3 Full Pack or equivalent package to maintain mechanical compatibility. Variants such as isolated tab versions retain mounting and pinout compatibility within the referenced category.
Q3: How important is the product status in part selection?
A3: Only “Active” status MOSFETs are considered valid replacements for the obsolete IPA50R280CE, ensuring component supply continuity.
Q4: Can other key electrical characteristics affect substitutability?
A4: Only the explicitly provided ratings (Vdss, Id, Rds(on), gate charge, power dissipation, temperature, drive voltage, and capacitance) are used to determine equivalency.
Q5: Are all listed substitute parts RoHS and REACH compliant?
A5: All substitutes indicate RoHS3 and REACH compliance, matching or exceeding the original’s environmental status.
Q6: Is testing or additional verification required before use?
A6: The information provided is based strictly on the parameters given and does not include application or in-circuit considerations.
Q7: Are substitutions restricted only to TO-220-3 Full Pack packages?
A7: Only through-hole TO-220-3 Full Pack or equivalent variants are listed to match the main part's package category and ensure mounting compatibility.
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