Infineon IPA50R280CE Equivalent & Substitute Parts Reference

Part Overview

The Infineon Technologies IPA50R280CE is an N-Channel MOSFET in the 500V, 13A (Tc), TO-220-3 Full Pack through-hole package, designed for power switching applications. This device is part of the CoolMOS™ series and is classified as obsolete. Due to its obsolete status, sourcing new or replacement units is challenged, prompting the need for technically equivalent or substitute MOSFETs matching the essential electrical and mechanical parameters for continued system compatibility and function.

Substiute Parts

IPA50R280CE
Infineon TechnologiesIn Stock: 40005IPA50R280CE Datasheet
IPA50R280CE
Current Part
IPA50R280CEXKSA2
Infineon TechnologiesIn Stock: 2262IPA50R280CEXKSA2 Datasheet
IPA50R280CEXKSA2
MFR Recommended
FDPF18N50
onsemiIn Stock: 17135FDPF18N50 Datasheet
FDPF18N50
MFR Recommended
FDPF18N50T
onsemiIn Stock: 31422FDPF18N50T Datasheet
FDPF18N50T
MFR Recommended
FDPF20N50FT
onsemiIn Stock: 20444FDPF20N50FT Datasheet
FDPF20N50FT
MFR Recommended
FDPF20N50T
onsemiIn Stock: 1915FDPF20N50T Datasheet
FDPF20N50T
MFR Recommended
PJMF280N60E1_T0_00001
Panjit International Inc.In Stock: 3084PJMF280N60E1_T0_00001 Datasheet
PJMF280N60E1_T0_00001
MFR Recommended
STF19NM50N
STMicroelectronicsIn Stock: 15290STF19NM50N Datasheet
STF19NM50N
MFR Recommended
TK18A50D(STA4,Q,M)
Toshiba Semiconductor and StorageIn Stock: 1175TK18A50D(STA4,Q,M) Datasheet
TK18A50D(STA4,Q,M)
MFR Recommended

Key Parameters

ParameterValue
ManufacturerInfineon Technologies
CategoryTransistors, FETs, MOSFETs
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Vdss (Drain to Source Voltage)500 V
Id (Continuous Drain Current @ 25°C)13A (Tc)
Drive Voltage13V
Rds On (Max)280mOhm @ 4.2A, 13V
Vgs(th) (Max) @ Id3.5V @ 350µA
Gate Charge Qg (Max) @ Vgs32.6 nC @ 10 V
Vgs (Max)±20V
Ciss (Input Capacitance Max) @ Vds773 pF @ 100 V
Power Dissipation (Max)30.4W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3-31
Package / CaseTO-220-3 Full Pack
MSL1 (Unlimited)
REACH StatusREACH Unaffected
ECCNEAR99

Substitute Part Grouping Explanation

Substitute MOSFETs for the IPA50R280CE are selected only if they match or exceed the following critical parameters:

  • N-Channel, MOSFET technology
  • Vdss ≥ 500 V
  • Id (continuous drain current) similar or higher
  • Rds(on) (max) at comparable test conditions
  • Drive voltage and Vgs(max) compatibility
  • Power dissipation (max) similar or higher
  • Compatible through-hole/TO-220 variant full pack package or equivalent
  • Compliance: RoHS, REACH, ECCN

Other operating and mechanical characteristics, such as gate charge, input capacitance, or temperature rating, must also fall within the original envelope or represent reasonable equivalence for similar system environments.

Parameter Comparison

Parameter IPA50R280CE
(Infineon)
IPA50R280CEXKSA2
(Infineon)
FDPF18N50
(onsemi)
FDPF18N50T
(onsemi)
FDPF20N50FT
(onsemi)
FDPF20N50T
(onsemi)
PJMF280N60E1_T0_00001
(Panjit)
STF19NM50N
(STMicro)
TK18A50D(STA4,Q,M)
(Toshiba)
Category Transistors, FETs, MOSFETs Transistors, FETs, MOSFETs Transistors, FETs, MOSFETs Transistors, FETs, MOSFETs Transistors, FETs, MOSFETs Transistors, FETs, MOSFETs Transistors, FETs, MOSFETs Transistors, FETs, MOSFETs Transistors, FETs, MOSFETs
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Vdss 500 V 500 V 500 V 500 V 500 V 500 V 600 V 500 V 500 V
Id (25°C) 13A (Tc) 7.5A (Tc) 18A (Tc) 18A (Tc) 20A (Tc) 20A (Tc) 13.8A (Tc) 14A (Tc) 18A (Ta)
Drive Voltage 13V 13V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) 280mOhm
@4.2A,13V
280mOhm
@4.2A,13V
265mOhm
@9A,10V
265mOhm
@9A,10V
260mOhm
@10A,10V
230mOhm
@10A,10V
280mOhm
@6.5A,10V
250mOhm
@7A,10V
270mOhm
@9A,10V
Vgs(th) (Max) 3.5V @ 350µA 3.5V @ 350µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 1mA
Gate Charge Qg (Max) 32.6 nC @ 10 V 32.6 nC @ 10 V 60 nC @ 10 V 60 nC @ 10 V 65 nC @ 10 V 59.5 nC @ 10 V 27 nC @ 10 V 34 nC @ 10 V 45 nC @ 10 V
Vgs (Max) ±20V ±20V ±30V ±30V ±30V ±30V ±30V ±25V ±30V
Ciss (Max) 773 pF @ 100V 773 pF @ 100V 2860 pF @ 25V 2860 pF @ 25V 3390 pF @ 25V 3120 pF @ 25V 926 pF @ 400V 1000 pF @ 50V 2600 pF @ 25V
Power Dissipation (Max) 30.4W (Tc) 30.4W (Tc) 38.5W (Tc) 38.5W (Tc) 38.5W (Tc) 38.5W (Tc) 34W (Tc) 30W (Tc) 50W (Tc)
Operating Temp. -55°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack, Isolated Tab TO-220-3 Full Pack TO-220-3 Full Pack
MSL 1 (Unlimited) 1 (Unlimited) Not Applicable Not Applicable Not Applicable Not Applicable Not Applicable 1 (Unlimited) 1 (Unlimited)
REACH Status REACH Unaffected REACH Unaffected REACH Unaffected REACH Unaffected REACH Unaffected REACH Unaffected REACH Unaffected REACH Unaffected Not Listed
ECCN EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Product Status Obsolete Active Active Active Active Active Active Active Active

Engineering Selection Recommendations

When selecting from these substitute MOSFETs for the Infineon IPA50R280CE, restriction to parts with “Active” status is necessary for sustained availability and supply assurance. All listed substitutes are RoHS and REACH compliant where indicated, with the same ECCN (EAR99), and Moisture Sensitivity Level (MSL 1 or Not Applicable). Only parts with matching or improved electrical ratings and compatible through-hole TO-220-3 Full Pack or equivalent package have been included based strictly on the provided data.

Frequently Asked Questions (FAQ)

Q1: What parameters are required for an N-channel MOSFET to replace the IPA50R280CE?
A1: Substitute MOSFETs must match or exceed the following: 500V or higher drain-to-source voltage (Vdss), continuous drain current (Id) at least equal to 13A (Tc), Rds(on) maximum 280mOhm or better at comparable test conditions, similar or compatible drive voltage/Vgs, power dissipation rating, through-hole TO-220-3 Full Pack package, and RoHS/REACH/ECCN compliance.

Q2: Are package differences critical in these MOSFET substitutions?
A2: All substitutes are supplied in through-hole, TO-220-3 Full Pack or equivalent package to maintain mechanical compatibility. Variants such as isolated tab versions retain mounting and pinout compatibility within the referenced category.

Q3: How important is the product status in part selection?
A3: Only “Active” status MOSFETs are considered valid replacements for the obsolete IPA50R280CE, ensuring component supply continuity.

Q4: Can other key electrical characteristics affect substitutability?
A4: Only the explicitly provided ratings (Vdss, Id, Rds(on), gate charge, power dissipation, temperature, drive voltage, and capacitance) are used to determine equivalency.

Q5: Are all listed substitute parts RoHS and REACH compliant?
A5: All substitutes indicate RoHS3 and REACH compliance, matching or exceeding the original’s environmental status.

Q6: Is testing or additional verification required before use?
A6: The information provided is based strictly on the parameters given and does not include application or in-circuit considerations.

Q7: Are substitutions restricted only to TO-220-3 Full Pack packages?
A7: Only through-hole TO-220-3 Full Pack or equivalent variants are listed to match the main part's package category and ensure mounting compatibility.

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