IPA50R199CPXKSA1 Equivalent & Substitute Parts

Part Overview

The IPA50R199CPXKSA1 is an N-Channel 500V 17A MOSFET manufactured by Infineon Technologies in the CoolMOS™ series. This device is rated for 139W power dissipation and features a maximum on-resistance of 199mOhm at 10V gate drive. The part is currently classified as Not For New Designs, making identification of active equivalent and substitute components essential for ongoing production support and design continuity.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	500	V
Continuous Drain Current (Id) @ 25°C	17	A
On-Resistance (Rds On Max) @ 10V	199	mOhm
Gate Threshold Voltage (Vgs th Max)	3.5	V @ 660µA
Gate Charge (Qg Max) @ 10V	45	nC
Power Dissipation (Max)	139	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-220-3	Through Hole
RoHS Status	ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution eligibility for the IPA50R199CPXKSA1 is determined by the following criteria:

Primary Substitution Parameters:

Drain to Source Voltage (Vdss): 500V minimum
Continuous Drain Current (Id): 17A minimum at 25°C
Package Type: TO-220-3 Through Hole configuration
On-Resistance (Rds On): Performance within acceptable operating range
Gate Charge (Qg): Switching characteristics compatibility
Operating Temperature: -55°C to 150°C minimum range
Compliance: ROHS3 and REACH requirements

Substitute Classification:

Direct Substitutes (Functionally Equivalent):

STF23NM50N: Matches 500V/17A specifications with improved Rds On (190mOhm) and active product status
STF28NM50N: Exceeds current rating (21A) while maintaining 500V rating and superior Rds On (158mOhm)

Compatible Alternatives (Higher Voltage Rating):

STF24N60M2: 600V rating provides additional voltage margin with 18A current capability and reduced gate charge (29nC)

Compatible Alternatives (Higher Current Rating):

FDPF18N50: 18A current rating with 500V specification, though higher Rds On (265mOhm)

Parameter Comparison

Parameter	IPA50R199CPXKSA1	STF23NM50N	STF28NM50N	STF24N60M2	FDPF18N50
Manufacturer	Infineon	STMicroelectronics	STMicroelectronics	STMicroelectronics	onsemi
Vdss (V)	500	500	500	600	500
Id @ 25°C (A)	17	17	21	18	18
Rds On Max @ 10V (mOhm)	199	190	158	190	265
Vgs(th) Max (V)	3.5	4	4	4	5
Qg Max @ 10V (nC)	45	45	50	29	60
Power Dissipation Max (W)	139	30	35	30	38.5
Operating Temp Range (°C)	-55 to 150	to 150	to 150	-55 to 150	-55 to 150
Package	TO-220-3	TO-220FP	TO-220FP	TO-220FP	TO-220F-3
Product Status	Not For New Designs	Active	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

For Direct Replacement (Recommended Primary Choice):

STF23NM50N is the preferred substitute. This part maintains identical voltage (500V) and current (17A) ratings as the IPA50R199CPXKSA1 while offering improved on-resistance performance (190mOhm vs. 199mOhm). The device carries Active product status from STMicroelectronics, ensuring long-term availability and supply continuity. ROHS3 compliance and REACH unaffected status match the original part requirements. The TO-220FP package is mechanically compatible with TO-220-3 footprints in standard through-hole applications.

For Higher Current Margin Applications:

STF28NM50N provides superior performance with 21A continuous drain current capability while maintaining the 500V rating. The reduced on-resistance (158mOhm) results in lower power dissipation and improved thermal performance. This part is suitable for applications requiring additional current headroom or thermal margin. Active product status ensures supply availability.

For Higher Voltage Margin Applications:

STF24N60M2 offers 600V drain-to-source voltage rating, providing additional voltage safety margin in applications subject to transient overvoltage conditions. The 18A current rating exceeds the original specification. Notably, this device features significantly reduced gate charge (29nC vs. 45nC), enabling faster switching characteristics. Active product status and full temperature range support (-55°C to 150°C) are provided.

For Cost-Optimized Alternatives:

FDPF18N50 from onsemi provides 500V/18A specifications with higher inventory availability (17,100 pieces). However, the elevated on-resistance (265mOhm) results in increased power dissipation and thermal load compared to the original part. This option is suitable only for applications where thermal constraints are not limiting factors.

All substitute parts maintain ROHS3 compliance and REACH unaffected status, meeting regulatory requirements equivalent to the original IPA50R199CPXKSA1.

Frequently Asked Questions (FAQ)

Q: Can STF23NM50N directly replace IPA50R199CPXKSA1 in existing PCB designs?

A: Yes. Both devices feature TO-220-3 through-hole packages with identical pin configurations and mechanical footprints. The electrical specifications are matched for 500V/17A operation. No circuit modifications are required for direct substitution.

Q: What is the significance of the different package designations (TO-220-3 vs. TO-220FP vs. TO-220F-3)?

A: These designations indicate variations in the TO-220 package family. TO-220-3 is the standard three-pin through-hole package. TO-220FP and TO-220F-3 are full-pack variants with improved thermal characteristics and mechanical robustness. All three variants are mechanically and electrically compatible for standard through-hole PCB applications.

Q: Why does STF24N60M2 have a lower power dissipation rating (30W) than the original IPA50R199CPXKSA1 (139W)?

A: Power dissipation ratings reflect the thermal design of the specific package and die configuration. The STF24N60M2 achieves superior thermal performance through advanced die design and packaging technology, resulting in lower junction temperatures at equivalent power levels. The 30W rating is a conservative specification for the TO-220FP package; actual thermal performance depends on PCB layout and heatsinking.

Q: Is STF28NM50N suitable for applications originally designed for 17A operation?

A: Yes. STF28NM50N is rated for 21A continuous drain current, exceeding the 17A requirement. The device operates safely at 17A with improved thermal margin. The reduced on-resistance (158mOhm) provides lower power dissipation and improved efficiency compared to the original specification.

Q: What are the compliance implications of selecting substitute parts?

A: All listed substitute parts maintain ROHS3 compliance and REACH unaffected status, matching the original IPA50R199CPXKSA1 regulatory requirements. No additional compliance verification is required for applications already qualified to these standards.

Q: How does gate charge (Qg) affect circuit performance in switching applications?

A: Gate charge determines the energy required to switch the MOSFET on and off. Lower gate charge (STF24N60M2 at 29nC) enables faster switching transitions and reduced driver power consumption. Higher gate charge (FDPF18N50 at 60nC) requires more driver current but does not affect DC operating characteristics. Selection depends on the specific gate driver circuit capabilities.

Q: Can FDPF18N50 be used despite its higher on-resistance?

A: FDPF18N50 is electrically compatible but exhibits 265mOhm on-resistance compared to 199mOhm for the original part. This results in approximately 33% higher conduction losses. Use is limited to applications where thermal design accommodates the increased power dissipation or where current levels remain below 17A, reducing the impact of higher on-resistance.

Q: What is the product status significance for long-term supply planning?

A: The original IPA50R199CPXKSA1 is classified as Not For New Designs, indicating Infineon will not actively support new applications. All substitute parts carry Active status, ensuring continued manufacturing, supply availability, and technical support from their respective manufacturers. Active status is essential for production continuity and long-term component sourcing.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message