Equivalent & Substitute Parts Reference for IMT3AT108

Part Overview

IMT3AT108, manufactured by Rohm Semiconductor, is a Bipolar (BJT) Transistor Array featuring two PNP transistors (dual configuration) rated at 50V collector-emitter breakdown and 150mA collector current, suited for surface mount applications in the SC-74, SOT-457 (SMT6) package. The device maintains an active product status, is RoHS3 compliant, and has unrestricted moisture sensitivity (MSL 1). Sourcing substitute or equivalent parts may be necessary when inventory needs exceed available stock, when package compatibility is required for specific layouts, or when alternative sourcing is preferred within the same performance and compliance parameters.

Substiute Parts

IMT3AT108

Rohm SemiconductorIn Stock: 19767IMT3AT108 Datasheet

Current PartRFQ

UMT1NTN

Rohm SemiconductorIn Stock: 185459UMT1NTN Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts are grouped based on strict matching of key electrical and mechanical parameters. The substitution logic is determined by:

• Transistor configuration (2 PNP, Dual)
• Maximum collector current (Ic)
• Maximum collector-emitter breakdown voltage (Vce)
• Vce saturation characteristics
• Maximum collector cutoff current
• Minimum DC current gain (hFE)
• Maximum power dissipation
• Transition frequency
• Operating junction temperature
• Surface mount compatibility
• Package/case style
• Compliance status (RoHS3, REACH)
• Moisture Sensitivity Level Only parts matching these parameters are included in the substitute grouping.

Parameter Comparison

Engineering Selection Recommendations

Both IMT3AT108 and UMT1NTN maintain an active product status and meet RoHS3 and REACH compliance standards. Their moisture sensitivity levels are classified as unlimited (MSL 1), making them suitable for various surface mount assembly processes. Selection between IMT3AT108 and UMT1NTN must account for power rating and package/case type given identical electrical characteristics.

Frequently Asked Questions (FAQ)

Q1: What are the primary substitution criteria for IMT3AT108?
A1: The main criteria are transistor type (2 PNP dual), maximum collector current, collector-emitter breakdown voltage, saturation voltage, cutoff current, DC current gain, transition frequency, power rating, operating junction temperature, mounting type, package/case, and regulatory compliance.

Q2: Is package/case compatibility important for substitution?
A2: Yes. IMT3AT108 uses SC-74, SOT-457 (SMT6) while UMT1NTN uses 6-TSSOP, SC-88, SOT-363 (UMT6). Mechanical fit, footprint, and pad layout compatibility must be confirmed in the circuit design.

Q3: Are there electrical differences between IMT3AT108 and UMT1NTN?
A3: All primary electrical parameters match except for the maximum power rating: IMT3AT108 supports up to 300mW while UMT1NTN supports up to 150mW.

Q4: How do compliance and certification impact substitution?
A4: Both parts are ROHS3 compliant and REACH unaffected, with identical ECCN and HTSUS classifications, supporting substitution for regulated assemblies.

Q5: Is there a difference in inventory availability?
A5: IMT3AT108 has an inventory of 19,662 pieces, while UMT1NTN offers 185,400 pieces, which may influence component sourcing decisions.