Equivalent & Substitute Parts Reference for IMH6AT108

Part Overview

The IMH6AT108, manufactured by Rohm Semiconductor, is an active pre-biased dual NPN bipolar transistor (BJT), suitable for surface mount applications within the Transistors, Bipolar (BJT) category. It features a high-frequency response, integrated biasing resistors, and a maximum collector current of 100mA at a breakdown voltage of 50V. Alternatives and substitute models are sometimes necessary due to variations in supply chain availability, inventory management, or package requirements. Selection of equivalent parts is based strictly on matching electrical and mechanical parameters as provided.

Substiute Parts

IMH6AT108

Rohm SemiconductorIn Stock: 16948IMH6AT108 Datasheet

Current PartRFQ

UMH2NTN

Rohm SemiconductorIn Stock: 187200UMH2NTN Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitute parts are selected based strictly on the following matching parameters: transistor configuration (2 NPN - Pre-Biased Dual), maximum collector current (100mA), maximum collector-emitter breakdown voltage (50V), base and emitter resistor values (47kOhms each), minimum DC current gain (68 at designated test conditions), maximum Vce saturation voltage (300mV at defined Ib/Ic), maximum collector cutoff current (500nA), transition frequency (250MHz), mounting type (Surface Mount), and compliance (RoHS3, MSL 1, REACH unaffected). Only parts matching these characteristics are listed. Package and device supplier package are additionally considered for compatibility in layout and assembly.

Parameter Comparison

Engineering Selection Recommendations

Both IMH6AT108 and UMH2NTN are active devices and are ROHS3 compliant, with an MSL rating of 1 (unlimited), and REACH unaffected status. Both parts share identical core electrical parameters and compliance certifications. Selection within substitute group is determined by inventory availability and package compatibility requirements according to the provided data.

Frequently Asked Questions (FAQ)

Q1. What critical parameters are required to match when substituting IMH6AT108?
A1. Core substitution criteria include transistor type (2 NPN - Pre-Biased Dual), collector current (100mA max), breakdown voltage (50V max), base and emitter resistor values (47kOhms), minimum current gain (68 @ 5mA, 5V), saturation voltage (300mV max at specified Ib/Ic), cutoff current (500nA max), frequency transition (250MHz), mounting configuration (Surface Mount), and compliance status.

Q2. Are the package types for IMH6AT108 and UMH2NTN interchangeable?
A2. IMH6AT108 uses SC-74, SOT-457 package with SMT6 supplier device package, while UMH2NTN features 6-TSSOP, SC-88, SOT-363 package and UMT6 supplier device package. Packaging differences may impact PCB footprint compatibility and must be considered.

Q3. Do both IMH6AT108 and UMH2NTN maintain equivalent RoHS and REACH compliance?
A3. Both device models are listed as ROHS3 Compliant and REACH Unaffected. Both have MSL 1 (Unlimited), supporting standard handling and assembly environments.

Q4. Is there any difference in power handling between the main and substitute parts?
A4. IMH6AT108 specifies a maximum power dissipation of 300mW, while UMH2NTN lists 150mW. This should be considered if operating conditions require maximum dissipation close to device limits.

Q5. What is the maximum collector current for both parts?
A5. Both IMH6AT108 and UMH2NTN are rated for a maximum collector current of 100mA.