Equivalent & Substitute Parts for IMH10AT110 (Rohm Semiconductor)

Part Overview

The IMH10AT110 from Rohm Semiconductor is a pre-biased, dual NPN bipolar junction transistor (BJT) in a surface-mount SC-74, SOT-457 (SMT6) package. Its functional specifications include integrated bias resistors, 50V breakdown voltage, 100mA collector current, and 250MHz transition frequency. The product status is "Not For New Designs," necessitating the identification of alternative models to ensure continuous production eligibility and long-term support in manufacturing or design updates.

Substiute Parts

IMH10AT110

Rohm SemiconductorIn Stock: 17483IMH10AT110 Datasheet

Current PartRFQ

RN1605TE85LF

Toshiba Semiconductor and StorageIn Stock: 938RN1605TE85LF Datasheet

DirectRFQ

PIMH9,115

Nexperia USA Inc.In Stock: 3931PIMH9,115 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution is strictly based on the matching of electrical and mechanical parameters relevant to the pre-biased dual NPN BJT product category. The allowed substitute relationships are determined by the following key fields: transistor type, collector current (Ic), collector-emitter breakdown voltage (Vce), base and emitter resistor values (R1, R2), DC current gain (hFE), Vce saturation voltage, collector cutoff current, transition frequency, maximum power dissipation, mounting type, and package/case compatibility. Only devices meeting these parameters are listed as equivalent or similar substitutes.

Parameter Comparison

Engineering Selection Recommendations

The IMH10AT110 is listed as "Not For New Designs." Both RN1605TE85LF (Toshiba Semiconductor and Storage) and PIMH9,115 (Nexperia USA Inc.) hold "Active" product status, indicating ongoing availability for new projects. All listed parts meet RoHS compliance and have MSL 1 (Unlimited), suitable for standard surface mount manufacturing conditions. Only the provided certifications and product status are considered for selection.

Frequently Asked Questions (FAQ)

Q1: What are the primary criteria for substituting the IMH10AT110 in my design?
A1: Key criteria include transistor type (2 NPN - Pre-Biased Dual), electrical ratings (Ic, Vce), base/emitter resistor values, DC current gain, saturation and cutoff current, maximum power dissipation, and mechanical compatibility (surface mount, SC-74, SOT-457 package).

Q2: Are RN1605TE85LF and PIMH9,115 identical in function to IMH10AT110?
A2: RN1605TE85LF matches all critical electrical and package parameters. PIMH9,115 differs in base resistor value (R1), DC current gain, Vce saturation, and power rating. Confirming parameter requirements is necessary for specific applications.

Q3: Does package or supplier device package variation affect interchangeability?
A3: All parts utilize the SC-74, SOT-457 footprint and surface mount type, supporting interchangeable use in layouts designed for this case. Supplier device package naming (SMT6, SM6, 6-TSOP) refers to variant designations but does not affect core footprint for these listings.

Q4: What compliance standards are relevant for these substitute parts?
A4: All referenced parts are RoHS compliant and have MSL 1, meeting typical environmental and handling standards for surface mount production.

Q5: Why is it necessary to seek alternatives for IMH10AT110?
A5: The IMH10AT110 has a product status of "Not For New Designs," requiring alternative options for ongoing or future applications to ensure supply continuity and compliance with current manufacturing policies.