Equivalent & Substitute Parts Reference for IMB4AT110

Part Overview

IMB4AT110 by Rohm Semiconductor is a Pre-Biased Bipolar Transistor (BJT), featuring dual PNP configuration in a Surface Mount SMT6 package. It is categorized under Transistors, Bipolar (BJT), with key electrical parameters such as 50V collector-emitter breakdown voltage, 100mA collector current, 10kOhms base resistor, 250MHz transition frequency, and 300mW power dissipation. The product status is "Not For New Designs," indicating that engineering teams may need to select equivalent or substitute parts to maintain supply consistency or for use in new applications. Substitution is necessary strictly based on matching electrical and mechanical parameters from available inventory.

Substiute Parts

IMB4AT110

Rohm SemiconductorIn Stock: 3278IMB4AT110 Datasheet

Current PartRFQ

DDA114TU-7-F

Diodes IncorporatedIn Stock: 4408DDA114TU-7-F Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts are selected based strictly on the alignment of core electrical parameters and package constraints: transistor type (2 PNP - Pre-Biased Dual), maximum collector current, collector-emitter breakdown voltage, base resistor value, transition frequency, maximum power, mounting style, compliance standards, and package compatibility. Only parts matching these specific electrical and mechanical parameters are considered valid substitutes.

Parameter Comparison

Engineering Selection Recommendations

IMB4AT110 is categorized as "Not For New Designs," while substitute DDA114TU-7-F is listed as "Active." Both components maintain RoHS3 compliance, REACH unaffected status, ECCN EAR99, and a Moisture Sensitivity Level of 1 (Unlimited), aligning with international standards for safety and environmental compliance. Selection is guided by matching product status and compliance, enabling transition to an active inventory solution.

Frequently Asked Questions (FAQ)

Q1: What key parameters are required for direct transistor substitution within this category?
A1: Transistor type, collector current, collector-emitter breakdown voltage, base resistor value, transition frequency, power rating, mounting type, package/case, compliance requirements, and inventory status.

Q2: Can the DDA114TU-7-F be used in place of IMB4AT110?
A2: DDA114TU-7-F matches the listed electrical parameters, compliance, and mounting requirements, making it suitable as a substitute within the constraints of the provided data.

Q3: Are both part numbers compliant with RoHS3 and REACH?
A3: Yes, both IMB4AT110 and DDA114TU-7-F are ROHS3 compliant and REACH unaffected as per the supplied specifications.

Q4: Are there any considerations regarding package compatibility?
A4: IMB4AT110 uses SC-74, SOT-457, while DDA114TU-7-F uses 6-TSSOP, SC-88, SOT-363. Ensure the mounting and layout are suitable for the package specified.

Q5: Does lower maximum power on DDA114TU-7-F affect substitution eligibility?
A5: The substitution eligibility within these parameters is defined strictly by matching as close as possible to the key electrical ratings and compliance; any differences are reflected in the table for engineering evaluation.