IDB06S60CATMA2 Equivalent & Substitute Parts

Part Overview

The IDB06S60CATMA2 is a Silicon Carbide (SiC) Schottky diode manufactured by Infineon Technologies, rated for 600 V DC reverse voltage and 6 A average rectified current in a TO-263-3 surface mount package. This component is part of the CoolSiC™+ series and features zero reverse recovery time, making it suitable for high-frequency switching applications.

The IDB06S60CATMA2 is currently discontinued at DiGi Electronics. Equivalent and substitute parts are necessary to maintain design continuity and ensure component availability for production and repair applications. Substitute parts must maintain electrical compatibility within the specified voltage, current, and thermal operating ranges while accommodating package and mounting requirements.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	600	V
Current - Average Rectified (Io)	6	A
Voltage - Forward (Vf) (Max) @ If	1.7 @ 6	V @ A
Reverse Recovery Time (trr)	0	ns
Current - Reverse Leakage @ Vr	80	µA @ 600 V
Capacitance @ Vr, F	280	pF @ 1V, 1MHz
Technology	SiC (Silicon Carbide) Schottky	—
Package / Case	TO-263-3, D2PAK (2 Leads + Tab)	—
Mounting Type	Surface Mount	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the IDB06S60CATMA2 is determined by the following critical parameters:

Voltage Rating: Substitute parts must have a DC reverse voltage rating (Vr) equal to or greater than 600 V to maintain system safety margins and prevent reverse breakdown.

Current Rating: Substitute parts must support an average rectified current (Io) of at least 6 A to handle the design load without thermal stress or performance degradation.

Forward Voltage: Forward voltage drop (Vf) at rated current must be compatible with circuit design specifications. Variations within ±0.1 V are acceptable for thermal and efficiency calculations.

Reverse Recovery Time: Zero or near-zero reverse recovery time (trr) is required to maintain switching performance in high-frequency applications.

Package Compatibility: All substitute parts must use the TO-263-3 / D2PAK surface mount package to ensure mechanical and thermal interface compatibility with existing PCB layouts.

Technology: SiC Schottky technology is required to maintain the performance characteristics of the original design.

Compliance: RoHS3 compliance and MSL Level 1 are mandatory for supply chain and manufacturing process compatibility.

Parameter Comparison

Parameter	IDB06S60CATMA2	IDK06G65C5XTMA2	STPSC806G-TR	STPSC606G-TR
Manufacturer	Infineon Technologies	Infineon Technologies	STMicroelectronics	STMicroelectronics
Voltage - DC Reverse (Vr) (Max)	600 V	650 V	600 V	600 V
Current - Average Rectified (Io)	6 A	6 A	8 A	6 A
Voltage - Forward (Vf) (Max) @ If	1.7 V @ 6 A	1.8 V @ 6 A	1.7 V @ 8 A	1.7 V @ 6 A
Reverse Recovery Time (trr)	0 ns	0 ns	0 ns	0 ns
Current - Reverse Leakage @ Vr	80 µA @ 600 V	1.1 mA @ 650 V	100 µA @ 600 V	75 µA @ 600 V
Capacitance @ Vr, F	280 pF @ 1V, 1MHz	190 pF @ 1V, 1MHz	450 pF @ 0V, 1MHz	375 pF @ 0V, 1MHz
Technology	SiC Schottky	SiC Schottky	SiC Schottky	SiC Schottky
Package / Case	TO-263-3, D2PAK	TO-263-3, D2PAK	TO-263-3, D2PAK	TO-263-3, D2PAK
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Product Status	Discontinued at DiGi Electronics	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

IDK06G65C5XTMA2 (Infineon Technologies): This part is an active substitute from the same manufacturer. It maintains the CoolSiC™+ series designation and offers a higher voltage rating (650 V) with identical current capacity (6 A). Forward voltage is slightly elevated at 1.8 V compared to 1.7 V, and reverse leakage is higher at 1.1 mA. The lower capacitance (190 pF) may provide improved switching performance. This part is suitable for applications where the higher voltage rating provides additional design margin. Packaging is PG-TO263-2 (2-lead variant) rather than the original 3-lead configuration; verify PCB layout compatibility.

STPSC606G-TR (STMicroelectronics): This is the manufacturer-recommended substitute. It matches the original part's voltage (600 V) and current (6 A) ratings exactly, with identical forward voltage (1.7 V @ 6 A). Reverse leakage is lower at 75 µA, and capacitance is 375 pF. The part is currently active with 1650 units in stock. Operating temperature range is -40°C to 175°C. This part provides the closest electrical equivalence to the IDB06S60CATMA2.

STPSC806G-TR (STMicroelectronics): This part offers higher current capacity (8 A) at the same 600 V voltage rating. Forward voltage remains at 1.7 V, but measured at 8 A. Reverse leakage is 100 µA, and capacitance is higher at 450 pF. This part is suitable only if the application can accommodate the increased capacitance and if the higher current rating does not introduce thermal or efficiency concerns. Currently active with 1676 units in stock.

All substitute parts maintain RoHS3 compliance, MSL Level 1 rating, and SiC Schottky technology. Selection should be based on specific circuit requirements for voltage margin, current headroom, and switching frequency performance.

Frequently Asked Questions (FAQ)

Q: Can the IDK06G65C5XTMA2 be used as a direct replacement for the IDB06S60CATMA2?

A: The IDK06G65C5XTMA2 is electrically compatible for applications operating at or below 600 V. The higher 650 V rating provides additional safety margin. However, the package variant (PG-TO263-2, 2-lead) differs from the original (PG-TO263-3-2, 3-lead). Verify that your PCB layout accommodates the 2-lead configuration before substitution.

Q: What is the difference between STPSC606G-TR and STPSC806G-TR?

A: Both parts are STMicroelectronics SiC Schottky diodes in D2PAK packages. The STPSC606G-TR is rated for 6 A (matching the original part), while the STPSC806G-TR is rated for 8 A. The STPSC606G-TR provides closer electrical equivalence. The STPSC806G-TR introduces higher capacitance (450 pF vs. 375 pF) and should only be selected if the application requires the additional current capacity.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed (IDK06G65C5XTMA2, STPSC806G-TR, and STPSC606G-TR) are RoHS3 compliant with MSL Level 1 rating, matching the original IDB06S60CATMA2 compliance profile.

Q: What is the impact of forward voltage differences on circuit performance?

A: The IDK06G65C5XTMA2 has a forward voltage of 1.8 V compared to 1.7 V for the original part. This 0.1 V difference results in approximately 0.6 W additional power dissipation at 6 A continuous current. Verify that thermal design and heat sinking remain adequate for your application.

Q: Can reverse leakage differences affect circuit operation?

A: Reverse leakage variations (75–100 µA for substitutes vs. 80 µA for the original) are within normal manufacturing tolerance and do not significantly impact circuit operation. The IDK06G65C5XTMA2 exhibits higher leakage (1.1 mA) due to its higher voltage rating; this should be evaluated in applications with strict leakage current requirements.

Q: Is the capacitance difference significant for switching applications?

A: Capacitance variations (190–450 pF) affect switching speed and EMI characteristics. The IDK06G65C5XTMA2 (190 pF) offers the lowest capacitance, potentially improving switching performance. The STPSC806G-TR (450 pF) has the highest capacitance and may require circuit optimization for high-frequency applications. Select based on your target switching frequency and EMI requirements.

Q: What is the operating temperature range for each substitute?

A: The original IDB06S60CATMA2 does not specify an operating temperature range. The IDK06G65C5XTMA2 operates from -55°C to 175°C. Both STMicroelectronics parts (STPSC606G-TR and STPSC806G-TR) operate from -40°C to 175°C. Verify compatibility with your application's thermal environment.

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