HUFA75652G3 N-Channel MOSFET 100V 75A Equivalent & Substitute Parts

Part Overview

The HUFA75652G3 is an N-Channel MOSFET manufactured by onsemi, rated for 100V drain-to-source voltage and 75A continuous drain current in a TO-247-3 through-hole package. This device is classified as obsolete, necessitating identification of active equivalent and substitute components for new designs and ongoing production requirements. The UltraFET™ series device delivers 515W maximum power dissipation and operates across a temperature range of -55°C to 175°C.

Substiute Parts

HUFA75652G3

onsemiIn Stock: 1052HUFA75652G3 Datasheet

Current PartRFQ

HUF75652G3

onsemiIn Stock: 2081HUF75652G3 Datasheet

Parametric EquivalentRFQ

APT10M19BVRG

Microchip TechnologyIn Stock: 895APT10M19BVRG Datasheet

SimilarRFQ

APT10M25BVRG

Microchip TechnologyIn Stock: 1021APT10M25BVRG Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the HUFA75652G3 is determined by strict equivalence across the following critical parameters:

Primary Equivalence Criteria:

• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 100V
• Continuous Drain Current (Id): 75A @ 25°C
• Package / Case: TO-247-3
• Mounting Type: Through Hole
• Technology: MOSFET (Metal Oxide)

Parametric Equivalence Classification:

The HUF75652G3 (onsemi) is a parametric equivalent with identical electrical specifications and packaging. This part maintains all core performance characteristics including Rds On, gate charge, input capacitance, and thermal ratings.

The APT10M19BVRG and APT10M25BVRG (Microchip Technology) are classified as similar substitutes. These devices share the same voltage rating (100V), current rating (75A), and package form factor (TO-247-3). However, they exhibit variations in on-resistance characteristics and gate charge specifications, reflecting different design approaches within the same functional class.

Parameter Comparison

Engineering Selection Recommendations

HUF75652G3 (onsemi) - Parametric Equivalent:

The HUF75652G3 is the direct parametric equivalent to the obsolete HUFA75652G3. This part is currently in active production status with ROHS3 compliance certification. Electrical specifications are identical across all measured parameters. This component is the preferred replacement for direct substitution in existing designs. Inventory availability is 2027 units in tube packaging.

APT10M19BVRG (Microchip Technology) - Similar Substitute:

The APT10M19BVRG maintains voltage and current ratings identical to the HUFA75652G3 and is housed in the same TO-247-3 package. This device exhibits lower gate charge (300 nC vs. 475 nC) and reduced input capacitance (6120 pF vs. 7585 pF), resulting in faster switching characteristics. On-resistance is specified at different test conditions (500mA vs. 75A), limiting direct thermal performance comparison. This part is ROHS3 compliant and actively produced. Inventory availability is 835 units in tube packaging.

APT10M25BVRG (Microchip Technology) - Similar Substitute:

The APT10M25BVRG shares the same voltage, current, and package specifications as the HUFA75652G3. This device features the lowest gate charge (225 nC) and input capacitance (5160 pF) among the substitute options, enabling the fastest switching response. On-resistance specification methodology differs from the main part. This component is ROHS3 compliant and in active production. Inventory availability is 982 units in tube packaging.

Frequently Asked Questions (FAQ)

Q: Can the HUF75652G3 be used as a direct replacement for the HUFA75652G3?

A: Yes. The HUF75652G3 is a parametric equivalent with identical electrical specifications and package form factor. Both devices are N-Channel MOSFETs rated for 100V, 75A, with 8 mOhm on-resistance and 515W power dissipation. The primary difference is product status: HUFA75652G3 is obsolete while HUF75652G3 is active production.

Q: What are the key differences between the onsemi and Microchip substitute options?

A: The onsemi HUF75652G3 provides identical electrical performance to the original HUFA75652G3. The Microchip APT10M19BVRG and APT10M25BVRG maintain the same voltage and current ratings but exhibit different switching characteristics. The APT10M19BVRG has lower gate charge (300 nC) and the APT10M25BVRG has the lowest gate charge (225 nC), resulting in faster switching speeds compared to the original 475 nC specification.

Q: Are all substitute parts compatible with the TO-247-3 package footprint?

A: Yes. All listed substitute parts utilize the TO-247-3 through-hole package. Physical mounting and thermal interface compatibility are maintained across all options.

Q: What compliance certifications apply to these substitute parts?

A: The HUF75652G3, APT10M19BVRG, and APT10M25BVRG are all ROHS3 compliant. All parts maintain REACH Unaffected status and EAR99 export classification. Moisture sensitivity level is 1 (Unlimited) for all devices.

Q: How do on-resistance specifications compare across these parts?

A: The HUFA75652G3 and HUF75652G3 specify 8 mOhm on-resistance at 75A and 10V gate drive. The APT10M19BVRG specifies 19 mOhm and the APT10M25BVRG specifies 25 mOhm, both measured at 500mA and 10V. These different test conditions prevent direct thermal performance comparison. Applications requiring the lowest on-resistance should prioritize the onsemi options.

Q: Which substitute part offers the fastest switching performance?

A: The APT10M25BVRG exhibits the lowest gate charge (225 nC) and input capacitance (5160 pF), enabling the fastest switching response. The APT10M19BVRG provides intermediate switching speed with 300 nC gate charge. The original HUFA75652G3 and its equivalent HUF75652G3 specify 475 nC gate charge, resulting in slower switching characteristics.

Q: Are there inventory considerations for part selection?

A: Current inventory levels are: HUF75652G3 (2027 units), APT10M25BVRG (982 units), and APT10M19BVRG (835 units). All parts are available in tube packaging and in active production status.