HT12G A1G Equivalent & Substitute Parts

Part Overview

The HT12G A1G is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 100 V DC reverse voltage and 1 A average rectified current. The device features fast recovery characteristics with a 50 ns reverse recovery time and is housed in a T-18 axial through-hole package (TS-1). This part is currently discontinued at DiGi Electronics, necessitating identification of equivalent substitute components that maintain identical electrical and mechanical specifications for continued circuit implementation.

Substiute Parts

HT12G A1G
Taiwan Semiconductor CorporationIn Stock: 1059HT12G A1G Datasheet
HT12G A1G
Current Part
HT12G A0G
Taiwan Semiconductor CorporationIn Stock: 967HT12G A0G Datasheet
HT12G A0G
Direct

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 100 V
Current - Average Rectified (Io) 1 A
Voltage - Forward (Vf) (Max) @ If 1 V @ 1 A
Reverse Recovery Time (trr) 50 ns
Current - Reverse Leakage @ Vr 5 µA @ 100 V
Capacitance @ Vr, F 15 pF @ 4V, 1MHz
Mounting Type Through Hole
Package / Case T-18, Axial
Operating Temperature - Junction -55 to 150 °C
Technology Standard
Speed Classification Fast Recovery ≤ 500ns, > 200mA (Io)

Substitute Part Grouping Explanation

Substitution of the HT12G A1G is determined by strict equivalence across all critical electrical and mechanical parameters. The following parameters establish the substitution criteria:

Electrical Parameters:

  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 1 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 100 V
  • Capacitance @ Vr, F: 15 pF @ 4V, 1MHz
  • Speed Classification: Fast Recovery ≤ 500ns, > 200mA (Io)

Mechanical Parameters:

  • Mounting Type: Through Hole
  • Package / Case: T-18, Axial
  • Supplier Device Package: TS-1
  • Operating Temperature - Junction: -55°C to 150°C

A substitute part must match all listed parameters without deviation. Parts meeting these criteria are classified as direct equivalents and may be used interchangeably in circuit applications.

Parameter Comparison

Parameter HT12G A1G (Main Part) HT12G A0G (Substitute) Match Status
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Identical
Category Diodes, Rectifiers Diodes, Rectifiers Identical
Voltage - DC Reverse (Vr) (Max) 100 V 100 V Identical
Current - Average Rectified (Io) 1 A 1 A Identical
Voltage - Forward (Vf) (Max) @ If 1 V @ 1 A 1 V @ 1 A Identical
Reverse Recovery Time (trr) 50 ns 50 ns Identical
Current - Reverse Leakage @ Vr 5 µA @ 100 V 5 µA @ 100 V Identical
Capacitance @ Vr, F 15 pF @ 4V, 1MHz 15 pF @ 4V, 1MHz Identical
Speed Classification Fast Recovery ≤ 500ns, > 200mA (Io) Fast Recovery ≤ 500ns, > 200mA (Io) Identical
Mounting Type Through Hole Through Hole Identical
Package / Case T-18, Axial T-18, Axial Identical
Supplier Device Package TS-1 TS-1 Identical
Operating Temperature - Junction -55°C to 150°C -55°C to 150°C Identical
Technology Standard Standard Identical
Base Product Number HT12 HT12 Identical
RoHS Status ROHS3 Compliant ROHS3 Compliant Identical
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) Identical
REACH Status REACH Unaffected REACH Unaffected Identical
Product Status Discontinued at DiGi Electronics Active Substitute Available

Engineering Selection Recommendations

The HT12G A0G serves as a direct equivalent substitute for the discontinued HT12G A1G. Both components are manufactured by Taiwan Semiconductor Corporation and share identical electrical specifications, mechanical packaging, and compliance certifications.

Compliance and Regulatory Status: Both the main part and substitute maintain ROHS3 compliance and REACH unaffected status, ensuring regulatory alignment for applications subject to environmental and hazardous substance restrictions. Moisture sensitivity level classification of 1 (Unlimited) indicates no special moisture handling requirements for either component.

Product Availability: The HT12G A0G maintains active product status with 917 units in stock, providing immediate availability for circuit implementation. The HT12G A1G is discontinued at DiGi Electronics, making the HT12G A0G the appropriate selection for new designs and component replenishment.

Circuit Compatibility: The HT12G A0G operates within identical electrical parameters and thermal ranges, ensuring direct functional substitution in existing circuit designs without modification to PCB layout, thermal management, or signal conditioning.

Frequently Asked Questions (FAQ)

Q: Can the HT12G A0G be used as a direct replacement for the HT12G A1G?

A: Yes. The HT12G A0G is a direct equivalent substitute. All electrical parameters, mechanical specifications, and compliance certifications are identical between the two components.

Q: Are there any differences in thermal performance between these parts?

A: No. Both components operate across the same junction temperature range of -55°C to 150°C and share identical reverse recovery time (50 ns) and forward voltage characteristics (1 V @ 1 A).

Q: Will the HT12G A0G fit the same PCB footprint as the HT12G A1G?

A: Yes. Both components use the T-18 axial through-hole package (TS-1 supplier device package), ensuring identical mechanical fit and lead spacing on existing circuit boards.

Q: What is the difference between the HT12G A1G and HT12G A0G part numbers?

A: The suffix designations (A1G versus A0G) represent different manufacturing date codes or internal revision levels from Taiwan Semiconductor Corporation. The electrical and mechanical specifications are identical.

Q: Are both parts compliant with environmental regulations?

A: Yes. Both the HT12G A1G and HT12G A0G are ROHS3 compliant and REACH unaffected, meeting current environmental and hazardous substance regulations.

Q: What is the reverse recovery time specification, and why is it important?

A: The reverse recovery time (trr) is 50 ns for both components. This parameter defines the time required for the diode to transition from forward conduction to reverse blocking state, affecting switching speed in rectification and high-frequency applications.

Q: Can these diodes be used in high-frequency switching applications?

A: Yes. Both components are classified as fast recovery diodes with recovery time ≤ 500 ns and forward current > 200 mA, making them suitable for switching applications requiring rapid reverse blocking transition.

Q: What is the reverse leakage current specification?

A: The reverse leakage current is 5 µA @ 100 V for both components. This represents the small current flowing through the diode when reverse biased at maximum rated voltage, indicating low leakage characteristics.

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