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HT12G A1G Equivalent & Substitute Parts
Part Overview
The HT12G A1G is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 100 V DC reverse voltage and 1 A average rectified current. The device features fast recovery characteristics with a 50 ns reverse recovery time and is housed in a T-18 axial through-hole package (TS-1). This part is currently discontinued at DiGi Electronics, necessitating identification of equivalent substitute components that maintain identical electrical and mechanical specifications for continued circuit implementation.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 100 | V |
| Current - Average Rectified (Io) | 1 | A |
| Voltage - Forward (Vf) (Max) @ If | 1 | V @ 1 A |
| Reverse Recovery Time (trr) | 50 | ns |
| Current - Reverse Leakage @ Vr | 5 | µA @ 100 V |
| Capacitance @ Vr, F | 15 | pF @ 4V, 1MHz |
| Mounting Type | Through Hole | — |
| Package / Case | T-18, Axial | — |
| Operating Temperature - Junction | -55 to 150 | °C |
| Technology | Standard | — |
| Speed Classification | Fast Recovery ≤ 500ns, > 200mA (Io) | — |
Substitute Part Grouping Explanation
Substitution of the HT12G A1G is determined by strict equivalence across all critical electrical and mechanical parameters. The following parameters establish the substitution criteria:
Electrical Parameters:
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 1 A
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 100 V
- Capacitance @ Vr, F: 15 pF @ 4V, 1MHz
- Speed Classification: Fast Recovery ≤ 500ns, > 200mA (Io)
Mechanical Parameters:
- Mounting Type: Through Hole
- Package / Case: T-18, Axial
- Supplier Device Package: TS-1
- Operating Temperature - Junction: -55°C to 150°C
A substitute part must match all listed parameters without deviation. Parts meeting these criteria are classified as direct equivalents and may be used interchangeably in circuit applications.
Parameter Comparison
| Parameter | HT12G A1G (Main Part) | HT12G A0G (Substitute) | Match Status |
|---|---|---|---|
| Manufacturer | Taiwan Semiconductor Corporation | Taiwan Semiconductor Corporation | Identical |
| Category | Diodes, Rectifiers | Diodes, Rectifiers | Identical |
| Voltage - DC Reverse (Vr) (Max) | 100 V | 100 V | Identical |
| Current - Average Rectified (Io) | 1 A | 1 A | Identical |
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 1 A | 1 V @ 1 A | Identical |
| Reverse Recovery Time (trr) | 50 ns | 50 ns | Identical |
| Current - Reverse Leakage @ Vr | 5 µA @ 100 V | 5 µA @ 100 V | Identical |
| Capacitance @ Vr, F | 15 pF @ 4V, 1MHz | 15 pF @ 4V, 1MHz | Identical |
| Speed Classification | Fast Recovery ≤ 500ns, > 200mA (Io) | Fast Recovery ≤ 500ns, > 200mA (Io) | Identical |
| Mounting Type | Through Hole | Through Hole | Identical |
| Package / Case | T-18, Axial | T-18, Axial | Identical |
| Supplier Device Package | TS-1 | TS-1 | Identical |
| Operating Temperature - Junction | -55°C to 150°C | -55°C to 150°C | Identical |
| Technology | Standard | Standard | Identical |
| Base Product Number | HT12 | HT12 | Identical |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | Identical |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) | Identical |
| REACH Status | REACH Unaffected | REACH Unaffected | Identical |
| Product Status | Discontinued at DiGi Electronics | Active | Substitute Available |
Engineering Selection Recommendations
The HT12G A0G serves as a direct equivalent substitute for the discontinued HT12G A1G. Both components are manufactured by Taiwan Semiconductor Corporation and share identical electrical specifications, mechanical packaging, and compliance certifications.
Compliance and Regulatory Status: Both the main part and substitute maintain ROHS3 compliance and REACH unaffected status, ensuring regulatory alignment for applications subject to environmental and hazardous substance restrictions. Moisture sensitivity level classification of 1 (Unlimited) indicates no special moisture handling requirements for either component.
Product Availability: The HT12G A0G maintains active product status with 917 units in stock, providing immediate availability for circuit implementation. The HT12G A1G is discontinued at DiGi Electronics, making the HT12G A0G the appropriate selection for new designs and component replenishment.
Circuit Compatibility: The HT12G A0G operates within identical electrical parameters and thermal ranges, ensuring direct functional substitution in existing circuit designs without modification to PCB layout, thermal management, or signal conditioning.
Frequently Asked Questions (FAQ)
Q: Can the HT12G A0G be used as a direct replacement for the HT12G A1G?
A: Yes. The HT12G A0G is a direct equivalent substitute. All electrical parameters, mechanical specifications, and compliance certifications are identical between the two components.
Q: Are there any differences in thermal performance between these parts?
A: No. Both components operate across the same junction temperature range of -55°C to 150°C and share identical reverse recovery time (50 ns) and forward voltage characteristics (1 V @ 1 A).
Q: Will the HT12G A0G fit the same PCB footprint as the HT12G A1G?
A: Yes. Both components use the T-18 axial through-hole package (TS-1 supplier device package), ensuring identical mechanical fit and lead spacing on existing circuit boards.
Q: What is the difference between the HT12G A1G and HT12G A0G part numbers?
A: The suffix designations (A1G versus A0G) represent different manufacturing date codes or internal revision levels from Taiwan Semiconductor Corporation. The electrical and mechanical specifications are identical.
Q: Are both parts compliant with environmental regulations?
A: Yes. Both the HT12G A1G and HT12G A0G are ROHS3 compliant and REACH unaffected, meeting current environmental and hazardous substance regulations.
Q: What is the reverse recovery time specification, and why is it important?
A: The reverse recovery time (trr) is 50 ns for both components. This parameter defines the time required for the diode to transition from forward conduction to reverse blocking state, affecting switching speed in rectification and high-frequency applications.
Q: Can these diodes be used in high-frequency switching applications?
A: Yes. Both components are classified as fast recovery diodes with recovery time ≤ 500 ns and forward current > 200 mA, making them suitable for switching applications requiring rapid reverse blocking transition.
Q: What is the reverse leakage current specification?
A: The reverse leakage current is 5 µA @ 100 V for both components. This represents the small current flowing through the diode when reverse biased at maximum rated voltage, indicating low leakage characteristics.
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