HSMS-280B-TR2G Equivalent & Substitute Parts

Part Overview

The HSMS-280B-TR2G is an RF Schottky diode manufactured by Broadcom Limited, designed for high-frequency applications requiring peak reverse voltage rating of 70V and maximum current handling of 1A. The device is packaged in SOT-323 (SC-59) surface mount configuration with a junction temperature rating of 150°C.

This part is classified as obsolete. Identifying equivalent and substitute components is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this RF diode topology.

Substiute Parts

HSMS-280B-TR2G

Broadcom LimitedIn Stock: 995HSMS-280B-TR2G Datasheet

Current PartRFQ

BAS70W,115

Nexperia USA Inc.In Stock: 16107BAS70W,115 Datasheet

DirectRFQ

MMBD770T1G

onsemiIn Stock: 12112MMBD770T1G Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the HSMS-280B-TR2G is determined by the following critical parameters:

• Diode Type: Schottky - Single topology
• Voltage Rating: Peak reverse voltage of 70V minimum
• Package: SOT-323 surface mount configuration
• Moisture Sensitivity: MSL 1 (Unlimited) classification
• Electrical Characteristics: Capacitance and resistance parameters within acceptable operating ranges for RF applications

The substitute parts identified below meet these core substitution criteria. BAS70W,115 and MMBD770T1G both maintain Schottky diode topology, 70V reverse voltage rating, SOT-323 packaging, and MSL 1 classification, enabling direct functional replacement in circuit designs.

Parameter Comparison

Engineering Selection Recommendations

BAS70W,115 (Nexperia USA Inc.): This substitute maintains active product status with ROHS3 compliance and identical capacitance characteristics (2pF @ 0V, 1MHz). Current rating of 70mA is reduced compared to the original 1A specification. Selection is appropriate for applications where maximum current requirements do not exceed 70mA and forward voltage characteristics at 15mA operation are acceptable.

MMBD770T1G (onsemi): This substitute provides active product status with ROHS3 compliance and enhanced current handling capability (200mA maximum). Operating temperature range is constrained to -55°C ~ 125°C, which is narrower than the original 150°C junction temperature rating. Capacitance is reduced to 1pF @ 20V, 1MHz. Selection is appropriate for applications requiring higher current capacity within the specified temperature operating window.

Both substitutes maintain 70V reverse voltage rating, SOT-323 packaging, and MSL 1 classification, ensuring mechanical and environmental compatibility with original design specifications.

Frequently Asked Questions (FAQ)

Q: Can BAS70W,115 directly replace HSMS-280B-TR2G in all applications?

A: BAS70W,115 maintains identical voltage rating (70V), package (SOT-323), and capacitance characteristics (2pF @ 0V, 1MHz). However, maximum current rating is 70mA versus the original 1A. Direct replacement is valid only for applications where circuit current requirements do not exceed 70mA.

Q: What are the key differences between the two substitute options?

A: MMBD770T1G offers higher current capacity (200mA) compared to BAS70W,115 (70mA), but operates within a narrower temperature range (-55°C ~ 125°C versus 150°C). BAS70W,115 maintains identical capacitance to the original part (2pF @ 0V, 1MHz), while MMBD770T1G provides lower capacitance (1pF @ 20V, 1MHz).

Q: Are both substitutes available in the same package configuration?

A: Yes. Both BAS70W,115 and MMBD770T1G are supplied in SOT-323 surface mount packaging, matching the original HSMS-280B-TR2G package specification. No PCB layout modifications are required for mechanical compatibility.

Q: Do the substitute parts meet environmental and compliance requirements?

A: Both substitutes are ROHS3 compliant and REACH unaffected, matching the original part's compliance classification. Moisture sensitivity level remains MSL 1 (Unlimited) for both options.

Q: Which substitute should be selected for RF applications requiring maximum frequency performance?

A: Selection depends on circuit current requirements. BAS70W,115 maintains identical capacitance (2pF @ 0V, 1MHz) to the original part. MMBD770T1G provides lower capacitance (1pF @ 20V, 1MHz), which may offer improved high-frequency performance in specific RF topologies. Circuit simulation and characterization are necessary to determine optimal selection for target frequency bands.