HS5B R7G Equivalent & Substitute Parts

Part Overview

The HS5B R7G is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 100 V DC reverse voltage and 5 A average rectified current in a surface mount DO-214AB (SMC) package. This part is classified as discontinued at DiGi Electronics, necessitating identification of equivalent and substitute components for ongoing design support and procurement.

The HS5B R7G operates across a junction temperature range of -55°C to 150°C and features fast recovery characteristics with a reverse recovery time of 50 nanoseconds. The component is RoHS3 compliant with unlimited moisture sensitivity level (MSL 1) and REACH unaffected status.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	100	V
Current - Average Rectified (Io)	5	A
Voltage - Forward (Vf) (Max) @ If	1	V @ 5 A
Speed Classification	Fast Recovery ≤ 500ns, > 200mA (Io)	—
Reverse Recovery Time (trr)	50	ns
Current - Reverse Leakage @ Vr	10	µA @ 100 V
Capacitance @ Vr, F	80	pF @ 4V, 1MHz
Package / Case	DO-214AB, SMC	—
Operating Temperature - Junction	-55 to 150	°C
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the HS5B R7G is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 5 A
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed Classification: Fast Recovery ≤ 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns

Parametric Equivalent Classification: Parts meeting all primary criteria with identical electrical specifications are classified as parametric equivalents. The HS5B (Tape & Reel packaging variant) and HS5B V7G are parametric equivalents, differing only in packaging configuration or product status.

Similar Part Classification: Parts with reduced current ratings (3 A instead of 5 A) or alternative speed classifications are classified as similar parts. These components share the same voltage rating and package type but operate at lower current levels or with different recovery characteristics. Similar parts are suitable for applications with lower current requirements or where recovery time specifications permit standard recovery operation.

Parameter Comparison

Manufacturer Part Number	Manufacturer	Vr (Max) [V]	Io [A]	Vf (Max) @ If [V]	Speed	trr [ns]	Ir @ Vr [µA]	C @ Vr [pF]	Package	Tj (Max) [°C]	Product Status
HS5B R7G	Taiwan Semiconductor Corporation	100	5	1 @ 5A	Fast Recovery ≤ 500ns	50	10 @ 100V	80 @ 4V, 1MHz	DO-214AB, SMC	150	Discontinued at DiGi Electronics
HS5B	Taiwan Semiconductor Corporation	100	5	1 @ 5A	Fast Recovery ≤ 500ns	50	10 @ 100V	80 @ 4V, 1MHz	DO-214AB, SMC	150	Active
HS5B V7G	Taiwan Semiconductor Corporation	100	5	1 @ 5A	Fast Recovery ≤ 500ns	50	10 @ 100V	80 @ 4V, 1MHz	DO-214AB, SMC	150	Discontinued at DiGi Electronics
CGRC502-G	Comchip Technology	100	5	1.15 @ 5A	Standard Recovery >500ns	—	10 @ 100V	—	DO-214AB, SMC	150	Active
CURC302-G	Comchip Technology	100	3	1 @ 3A	Fast Recovery ≤ 500ns	50	5 @ 100V	—	DO-214AB, SMC	150	Active
ES3B-13-F	Diodes Incorporated	100	3	0.9 @ 3A	Fast Recovery ≤ 500ns	25	10 @ 100V	45 @ 4V, 1MHz	DO-214AB, SMC	150	Active
ES3BB-13-F	Diodes Incorporated	100	3	0.9 @ 3A	Fast Recovery ≤ 500ns	25	10 @ 100V	45 @ 4V, 1MHz	DO-214AA, SMB	150	Active
ESH3B-E3/57T	Vishay General Semiconductor - Diodes Division	100	3	0.9 @ 3A	Fast Recovery ≤ 500ns	40	5 @ 100V	—	DO-214AB, SMC	175	Active
ESH3B-E3/9AT	Vishay General Semiconductor - Diodes Division	100	3	0.9 @ 3A	Fast Recovery ≤ 500ns	40	5 @ 100V	—	DO-214AB, SMC	175	Active
ESH3B-M3/57T	Vishay General Semiconductor - Diodes Division	100	3	0.9 @ 3A	Fast Recovery ≤ 500ns	40	5 @ 100V	70 @ 4V, 1MHz	DO-214AB, SMC	175	Active
ESH3B-M3/9AT	Vishay General Semiconductor - Diodes Division	100	3	0.9 @ 3A	Fast Recovery ≤ 500ns	40	5 @ 100V	70 @ 4V, 1MHz	DO-214AB, SMC	175	Active

Engineering Selection Recommendations

Parametric Equivalent Selection:

The HS5B (Tape & Reel variant) is the primary parametric equivalent for the HS5B R7G. This component maintains identical electrical specifications including 100 V reverse voltage, 5 A average rectified current, 50 ns reverse recovery time, and fast recovery speed classification. The HS5B is currently active in product status, providing continuity for applications requiring the full 5 A current rating. Both components are RoHS3 compliant with MSL 1 rating and REACH unaffected status.

The HS5B V7G is also a parametric equivalent with identical electrical characteristics but is discontinued at DiGi Electronics, limiting its availability for new procurement.

Similar Part Selection for Reduced Current Applications:

For applications where the 5 A current requirement can be reduced to 3 A, multiple active alternatives exist:

CURC302-G (Comchip Technology) provides identical fast recovery characteristics (50 ns trr) and forward voltage specification (1 V @ 3 A) in the DO-214AB package. This component is active and RoHS3 compliant.

ES3B-13-F (Diodes Incorporated) offers fast recovery operation (25 ns trr) with lower forward voltage (0.9 V @ 3 A) in the DO-214AB package. This component has high inventory availability and is RoHS3 compliant.

ESH3B series components (Vishay General Semiconductor - Diodes Division) including ESH3B-E3/57T, ESH3B-E3/9AT, ESH3B-M3/57T, and ESH3B-M3/9AT provide fast recovery operation with extended junction temperature range to 175°C. These components are suitable for applications requiring higher temperature operation.

Non-Recommended Alternative:

CGRC502-G (Comchip Technology) operates with standard recovery characteristics (>500ns) rather than fast recovery, making it unsuitable for applications requiring the fast recovery speed classification of the HS5B R7G.

ES3BB-13-F uses the DO-214AA (SMB) package rather than DO-214AB (SMC), requiring different PCB footprint and assembly considerations.

Frequently Asked Questions (FAQ)

Q: Can the HS5B (Tape & Reel variant) directly replace the HS5B R7G?

A: Yes. The HS5B is a parametric equivalent with identical electrical specifications. Both components are rated for 100 V reverse voltage, 5 A average rectified current, 50 ns reverse recovery time, and fast recovery speed classification. The primary difference is packaging configuration and product status. The HS5B is currently active, whereas the HS5B R7G is discontinued at DiGi Electronics.

Q: What is the difference between fast recovery and standard recovery diodes?

A: Fast recovery diodes have reverse recovery times of 500 nanoseconds or less, while standard recovery diodes exceed 500 nanoseconds. The HS5B R7G specifies fast recovery with 50 ns reverse recovery time. The CGRC502-G operates with standard recovery characteristics and is not a suitable substitute for applications requiring fast recovery performance.

Q: Can 3 A rated diodes replace the 5 A HS5B R7G?

A: 3 A rated diodes are suitable only for applications where the maximum current requirement does not exceed 3 A. Components such as CURC302-G, ES3B-13-F, and ESH3B series parts are rated for 3 A average rectified current. These parts maintain the 100 V reverse voltage rating and DO-214AB package compatibility but operate at reduced current capacity.

Q: What is the significance of the DO-214AB package specification?

A: The DO-214AB package, also designated SMC (Surface Mount Case), defines the physical footprint and mounting characteristics. The HS5B R7G requires a DO-214AB footprint. The ES3BB-13-F uses the DO-214AA (SMB) package, which has a different physical size and PCB footprint, requiring design modification for substitution.

Q: Are all listed substitute parts RoHS3 compliant?

A: Yes. All parametric equivalent and similar parts listed are RoHS3 compliant with MSL 1 (unlimited) moisture sensitivity level and REACH unaffected status, matching the compliance profile of the HS5B R7G.

Q: What is the operating temperature range difference between the HS5B R7G and ESH3B series alternatives?

A: The HS5B R7G operates across -55°C to 150°C junction temperature. The ESH3B series components (ESH3B-E3/57T, ESH3B-E3/9AT, ESH3B-M3/57T, ESH3B-M3/9AT) extend the maximum junction temperature to 175°C, providing 25°C additional thermal margin for high-temperature applications.

Q: How does forward voltage affect diode selection?

A: Forward voltage (Vf) determines the voltage drop across the diode during conduction. The HS5B R7G specifies 1 V @ 5 A. Similar 3 A alternatives such as ES3B-13-F and ESH3B series specify 0.9 V @ 3 A, representing a 100 mV reduction. The CGRC502-G specifies 1.15 V @ 5 A, representing a 150 mV increase. Forward voltage differences affect power dissipation and thermal design.

Q: What does reverse recovery time (trr) indicate?

A: Reverse recovery time is the interval required for a diode to transition from forward conduction to reverse blocking when the applied voltage reverses. The HS5B R7G specifies 50 ns. Faster recovery times (such as 25 ns for ES3B-13-F or 40 ns for ESH3B series) reduce switching losses in high-frequency applications. Standard recovery diodes with trr >500ns are unsuitable for fast switching applications.

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