HS3M M6G Equivalent & Substitute Parts

Part Overview

The HS3M M6G is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 1000 V DC reverse voltage and 3 A average rectified current in a surface mount DO-214AB (SMC) package. This device features fast recovery characteristics with a reverse recovery time of 75 nanoseconds and operates across a junction temperature range of -55°C to 150°C. The HS3M M6G is discontinued at DiGi Electronics, making equivalent substitute parts necessary for ongoing design support and procurement.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	1000	V
Current - Average Rectified (Io)	3	A
Voltage - Forward (Vf) (Max) @ If	1.7 @ 3 A	V
Speed Classification	Fast Recovery ≤ 500ns, > 200mA (Io)	—
Reverse Recovery Time (trr)	75	ns
Current - Reverse Leakage @ Vr	10	µA @ 1000 V
Mounting Type	Surface Mount	—
Package / Case	DO-214AB, SMC	—
Operating Temperature - Junction	-55 to 150	°C
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitute parts for the HS3M M6G are selected based on strict electrical and mechanical compatibility criteria. The primary substitution parameters are:

Critical Matching Parameters:

Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 3 A
Package / Case: DO-214AB (SMC) or equivalent surface mount package
Mounting Type: Surface Mount
RoHS Status: ROHS3 Compliant

Secondary Compatibility Parameters:

Voltage - Forward (Vf) (Max) @ If: 1.7 V or lower at 3 A
Speed Classification: Fast Recovery (≤ 500ns, > 200mA) or Standard Recovery (> 500ns)
Reverse Recovery Time (trr): 75 ns or lower for fast recovery types
Operating Temperature - Junction: Minimum -55°C, Maximum 150°C or higher

Substitute parts are grouped into two categories:

Direct Electrical Equivalents (Fast Recovery, 75 ns): Parts matching all critical parameters including fast recovery speed and 75 ns reverse recovery time. These provide identical electrical performance.

Functional Equivalents (Standard Recovery or Alternative Speed): Parts matching voltage, current, and package requirements but with different recovery characteristics or forward voltage specifications. These are suitable for applications where the specific recovery time is not a design constraint.

Parameter Comparison

Part Number	Manufacturer	Vr (Max) [V]	Io [A]	Vf (Max) @ If [V]	Speed	trr [ns]	Ir @ Vr [µA]	Package	Temp Range [°C]	Status
HS3M M6G	Taiwan Semiconductor Corporation	1000	3	1.7 @ 3 A	Fast Recovery ≤ 500ns	75	10 @ 1000 V	DO-214AB (SMC)	-55 to 150	Discontinued
STTH310S	STMicroelectronics	1000	3	1.7 @ 3 A	Fast Recovery ≤ 500ns	75	10 @ 1000 V	DO-214AB (SMC)	-40 to 175	Active
CURC307-G	Comchip Technology	1000	3	1.7 @ 3 A	Fast Recovery ≤ 500ns	75	5 @ 1000 V	DO-214AB (SMC)	-55 to 150	Active
ER3M-TP	Micro Commercial Co	1000	3	1.7 @ 3 A	Fast Recovery ≤ 500ns	75	5 @ 1000 V	DO-214AB (SMC)	-50 to 175	Active
RS3M-13-F	Diodes Incorporated	1000	3	1.3 @ 3 A	Fast Recovery ≤ 500ns	500	5 @ 1000 V	DO-214AB (SMC)	-65 to 150	Active
S3M-13-F	Diodes Incorporated	1000	3	1.15 @ 3 A	Standard Recovery > 500ns	—	10 @ 1000 V	DO-214AB (SMC)	-65 to 150	Active
S3M-TP	Micro Commercial Co	1000	3	1.2 @ 3 A	Standard Recovery > 500ns	—	10 @ 1000 V	DO-214AB (SMC)	-55 to 150	Active
S3MHE3_A/H	Vishay General Semiconductor - Diodes Division	1000	3	1.15 @ 2.5 A	Standard Recovery > 500ns	2500	10 @ 1000 V	DO-214AB (SMC)	-55 to 150	Active
RS3MB-13-F	Diodes Incorporated	1000	3	1.15 @ 3 A	Standard Recovery > 500ns	500	5 @ 1000 V	DO-214AA (SMB)	-65 to 150	Active
S3MB-13-F	Diodes Incorporated	1000	3	1.15 @ 3 A	Standard Recovery > 500ns	—	10 @ 1000 V	DO-214AA (SMB)	-65 to 150	Active
CGRC507-G	Comchip Technology	1000	5	1.15 @ 5 A	Standard Recovery > 500ns	—	10 @ 1000 V	DO-214AB (SMC)	-55 to 150	Active

Engineering Selection Recommendations

For Direct Replacement (Identical Electrical Performance):

STTH310S (STMicroelectronics) is the primary direct substitute for HS3M M6G. Both devices share identical voltage, current, forward voltage, and fast recovery characteristics (75 ns reverse recovery time). STTH310S is in active production status with extended operating temperature range (-40°C to 175°C) and ROHS3 compliance. This part is suitable for applications requiring no design modification.

CURC307-G (Comchip Technology) and ER3M-TP (Micro Commercial Co) are secondary direct electrical equivalents, matching all critical parameters including 75 ns reverse recovery time. Both are in active production and ROHS3 compliant. CURC307-G maintains the original temperature range (-55°C to 150°C), while ER3M-TP extends to -50°C to 175°C.

For Functional Replacement (Modified Recovery Characteristics):

RS3M-13-F (Diodes Incorporated) provides 1000 V, 3 A operation in DO-214AB package with lower forward voltage (1.3 V @ 3 A) but extended reverse recovery time (500 ns). This part is suitable for applications where fast recovery is not critical and lower forward voltage drop is beneficial for thermal management.

S3M-13-F (Diodes Incorporated) and S3M-TP (Micro Commercial Co) offer standard recovery characteristics (> 500ns) with reduced forward voltage (1.15 V to 1.2 V @ 3 A). These parts are appropriate for general-purpose rectification where switching speed is not a design constraint.

For Package-Variant Replacement:

RS3MB-13-F and S3MB-13-F (Diodes Incorporated) provide equivalent electrical performance in DO-214AA (SMB) package instead of DO-214AB (SMC). These parts are suitable only if PCB layout accommodates the larger SMB footprint.

For Higher Current Applications:

CGRC507-G (Comchip Technology) is rated for 5 A average rectified current at 1000 V, providing design margin for applications approaching the 3 A limit of the original HS3M M6G.

Compliance and Production Status:

All recommended substitute parts are ROHS3 compliant, REACH unaffected, and in active production status. S3MHE3_A/H (Vishay) includes AEC-Q101 automotive qualification for applications requiring automotive-grade components.

Frequently Asked Questions (FAQ)

Q: Can STTH310S directly replace HS3M M6G without circuit modification?

A: Yes. STTH310S matches all critical electrical parameters: 1000 V reverse voltage, 3 A average rectified current, 1.7 V forward voltage at 3 A, and 75 ns reverse recovery time. Both use DO-214AB (SMC) surface mount package. No circuit modification is required. The extended operating temperature range of STTH310S (-40°C to 175°C versus -55°C to 150°C) provides additional design margin.

Q: What is the difference between fast recovery and standard recovery diodes in this comparison?

A: Fast recovery diodes (STTH310S, CURC307-G, ER3M-TP) have reverse recovery time of 75 ns or less, enabling faster switching and reduced switching losses in high-frequency applications. Standard recovery diodes (S3M-13-F, S3M-TP, S3MHE3_A/H) have reverse recovery times exceeding 500 ns, suitable for lower-frequency rectification where switching speed is not critical. Selection depends on application switching frequency requirements.

Q: Can SMB package diodes (RS3MB-13-F, S3MB-13-F) substitute for SMC package diodes?

A: SMB and SMC packages are not mechanically interchangeable. SMB (DO-214AA) is larger than SMC (DO-214AB). Substitution requires PCB redesign to accommodate the different footprint. Electrical parameters remain equivalent. Use SMB variants only if PCB layout can be modified.

Q: Why does RS3M-13-F have 500 ns reverse recovery time while maintaining fast recovery classification?

A: RS3M-13-F is classified as fast recovery based on the definition "≤ 500ns, > 200mA (Io)." At the 500 ns boundary, it meets the fast recovery specification. However, it provides slower switching than the 75 ns devices (STTH310S, CURC307-G, ER3M-TP). Selection should consider specific application switching frequency requirements.

Q: Is S3MHE3_A/H suitable for non-automotive applications?

A: Yes. S3MHE3_A/H meets all electrical requirements for general-purpose rectification at 1000 V, 3 A. AEC-Q101 automotive qualification indicates additional quality and reliability screening but does not restrict use to automotive applications. This part is suitable for any application requiring 1000 V, 3 A rectification with standard recovery characteristics.

Q: What is the impact of forward voltage differences between substitute parts?

A: Forward voltage variations (1.15 V to 1.7 V @ 3 A) directly affect power dissipation and thermal performance. Lower forward voltage (1.15 V in S3M-13-F, S3M-TP, S3MHE3_A/H) reduces heat generation compared to higher forward voltage (1.7 V in HS3M M6G, STTH310S). Selection should consider thermal budget and heat dissipation requirements of the application.

Q: Can CGRC507-G (5 A rated) replace HS3M M6G (3 A rated)?

A: CGRC507-G is electrically compatible at 1000 V reverse voltage and provides higher current rating (5 A versus 3 A). This part is suitable for applications where design margin or future current increase is required. However, CGRC507-G uses standard recovery characteristics (> 500ns) rather than fast recovery (75 ns), which may affect switching performance in high-frequency applications.

Q: What compliance certifications apply to all substitute parts?

A: All substitute parts listed are ROHS3 compliant and REACH unaffected. These certifications confirm compliance with hazardous substance restrictions and environmental regulations. S3MHE3_A/H additionally carries AEC-Q101 automotive qualification. All parts are suitable for commercial and industrial applications meeting these regulatory requirements.

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