HS3MB R5G Equivalent & Substitute Parts

Part Overview

The HS3MB R5G is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 1000 V DC reverse voltage and 3 A average rectified current in a DO-214AA (SMB) surface mount package. This device features fast recovery characteristics with a reverse recovery time of 75 nanoseconds and operates across a junction temperature range of -55°C to 150°C. The part is discontinued at DiGi Electronics, necessitating identification of functionally equivalent alternatives from active manufacturers to maintain design continuity and ensure supply chain availability.

Substiute Parts

HS3MB R5G
Taiwan Semiconductor CorporationIn Stock: 1493HS3MB R5G Datasheet
HS3MB R5G
Current Part
CGRB207-G
Comchip TechnologyIn Stock: 1110CGRB207-G Datasheet
CGRB207-G
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CGRB307-G
Comchip TechnologyIn Stock: 38489CGRB307-G Datasheet
CGRB307-G
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CURB207-G
Comchip TechnologyIn Stock: 46630CURB207-G Datasheet
CURB207-G
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RS2M-13-F
Diodes IncorporatedIn Stock: 20308RS2M-13-F Datasheet
RS2M-13-F
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RS2MA-13-F
Diodes IncorporatedIn Stock: 765412RS2MA-13-F Datasheet
RS2MA-13-F
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S2M-13-F
Diodes IncorporatedIn Stock: 20400S2M-13-F Datasheet
S2M-13-F
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S2M-LTP
Micro Commercial CoIn Stock: 2674S2M-LTP Datasheet
S2M-LTP
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S2MA-13-F
Diodes IncorporatedIn Stock: 9127S2MA-13-F Datasheet
S2MA-13-F
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S2MHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 36665S2MHE3_A/H Datasheet
S2MHE3_A/H
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S2MHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 6858S2MHE3_A/I Datasheet
S2MHE3_A/I
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S3MB
MDDIn Stock: 6444S3MB Datasheet
S3MB
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S3MB-TP
Micro Commercial CoIn Stock: 3382S3MB-TP Datasheet
S3MB-TP
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ER3MB-TP
Micro Commercial CoIn Stock: 11875ER3MB-TP Datasheet
ER3MB-TP
Parametric Equivalent

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 1000 V
Current - Average Rectified (Io) 3 A
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 3 A V
Speed Classification Fast Recovery ≤ 500ns -
Reverse Recovery Time (trr) 75 ns
Current - Reverse Leakage @ Vr 10 µA @ 1000 V
Package / Case DO-214AA, SMB -
Operating Temperature - Junction -55 to 150 °C
RoHS Status ROHS3 Compliant -

Substitute Part Grouping Explanation

Substitution of the HS3MB R5G is determined by strict alignment of electrical and mechanical parameters. The primary substitution criteria are:

Critical Parameters for Substitution:

  • Voltage - DC Reverse (Vr) (Max): Must equal or exceed 1000 V
  • Current - Average Rectified (Io): Must equal or exceed 3 A
  • Package / Case: Must be DO-214AA (SMB) surface mount
  • Mounting Type: Must be surface mount compatible with SMB footprint
  • Operating Temperature Range: Must accommodate -55°C to 150°C or equivalent industrial range
  • RoHS Compliance: Must maintain ROHS3 Compliant status

Secondary Parameters Affecting Performance:

  • Voltage - Forward (Vf): Lower values indicate improved efficiency
  • Speed Classification: Fast recovery (≤ 500ns) preferred for switching applications
  • Reverse Recovery Time (trr): Lower values reduce switching losses
  • Current - Reverse Leakage: Lower values indicate better blocking characteristics

Substitute parts are grouped into two categories:

Category A - Direct Equivalents (3A Rating): Parts meeting or exceeding the 3 A current specification with matching voltage and package requirements.

Category B - Functional Alternatives (Lower Current Rating): Parts rated below 3 A but sharing the same voltage, package, and fast recovery characteristics. These are suitable for applications where the actual circuit current demand is lower than the original 3 A specification.

Parameter Comparison

Part Number Manufacturer Vr (Max) [V] Io [A] Vf (Max) [V] Speed trr [ns] Ir @ Vr [µA] Package Temp Range [°C] Status
HS3MB R5G Taiwan Semiconductor 1000 3 1.7 @ 3A Fast Recovery ≤ 500ns 75 10 @ 1000V DO-214AA (SMB) -55 to 150 Discontinued
CGRB307-G Comchip Technology 1000 3 1.1 @ 3A Standard Recovery >500ns - 5 @ 1000V DO-214AA (SMB) -55 to 150 Active
CGRB207-G Comchip Technology 1000 2 1.1 @ 2A Standard Recovery >500ns - 5 @ 1000V DO-214AA (SMB) -55 to 150 Active
CURB207-G Comchip Technology 1000 2 1.7 @ 2A Fast Recovery ≤ 500ns 75 5 @ 1000V DO-214AA (SMB) -55 to 150 Active
RS2M-13-F Diodes Incorporated 1000 1.5 1.3 @ 1.5A Fast Recovery ≤ 500ns 500 5 @ 1000V DO-214AA (SMB) -65 to 150 Active
S2M-13-F Diodes Incorporated 1000 1.5 1.15 @ 1.5A Standard Recovery >500ns - 5 @ 1000V DO-214AA (SMB) -65 to 150 Active
S2M-LTP Micro Commercial Co 1000 2 1.15 @ 2A Fast Recovery ≤ 500ns - 5 @ 1000V DO-214AA (SMB) -55 to 150 Active
S2MHE3_A/H Vishay General Semiconductor 1000 1.5 1.15 @ 1.5A Standard Recovery >500ns 2000 1 @ 1000V DO-214AA (SMB) -55 to 150 Active
S2MHE3_A/I Vishay General Semiconductor 1000 1.5 1.15 @ 1.5A Standard Recovery >500ns 2000 1 @ 1000V DO-214AA (SMB) -55 to 150 Active

Engineering Selection Recommendations

Primary Substitute - Direct Current Rating Match:

The CGRB307-G from Comchip Technology is the primary equivalent for the HS3MB R5G. This part maintains the identical 1000 V / 3 A electrical specification and DO-214AA (SMB) package footprint. The CGRB307-G is in active production status with 38,451 units in stock, ensuring supply continuity. Both parts are ROHS3 compliant and operate across compatible temperature ranges. The CGRB307-G exhibits lower forward voltage (1.1 V vs. 1.7 V at rated current), resulting in improved thermal efficiency. The trade-off is standard recovery speed (>500ns) versus the original fast recovery (75ns), which is acceptable for general-purpose rectification applications where switching frequency is not a critical constraint.

Secondary Substitute - Fast Recovery Characteristics Preservation:

The CURB207-G from Comchip Technology preserves the fast recovery characteristics (75 ns trr) and forward voltage profile (1.7 V @ 2A) of the original HS3MB R5G. This part is rated for 2 A continuous current and is suitable for applications where the circuit current demand does not exceed 2 A. The CURB207-G offers the highest inventory availability (46,532 units) and maintains ROHS3 compliance. Selection of this part requires confirmation that the application current requirement is ≤ 2 A.

Alternative Substitute - Lower Current Applications:

The S2M-LTP from Micro Commercial Co provides a 2 A rated alternative with fast recovery characteristics (≤ 500ns) and improved forward voltage (1.15 V @ 2A). This part is suitable for applications where circuit current does not exceed 2 A and thermal efficiency is prioritized. The S2M-LTP maintains the -55°C to 150°C operating range and ROHS3 compliance.

Automotive-Grade Alternative:

The S2MHE3_A/H and S2MHE3_A/I from Vishay General Semiconductor are automotive-qualified alternatives (AEC-Q101) rated for 1.5 A. These parts feature exceptionally low reverse leakage current (1 µA @ 1000V) and are suitable for automotive applications requiring enhanced reliability. Selection requires confirmation that circuit current does not exceed 1.5 A.

Selection Criteria Summary:

  • For 3 A applications requiring direct replacement: Select CGRB307-G
  • For 2 A applications requiring fast recovery: Select CURB207-G or S2M-LTP
  • For automotive applications at 1.5 A: Select S2MHE3_A/H or S2MHE3_A/I
  • For general-purpose 1.5 A applications: Select RS2M-13-F or S2M-13-F

All recommended substitutes maintain ROHS3 compliance, surface mount SMB package compatibility, and 1000 V voltage rating. Verify actual circuit current requirements before selecting lower-rated alternatives.

Frequently Asked Questions (FAQ)

Q: Can the CGRB307-G directly replace the HS3MB R5G without circuit modification?

A: Yes. The CGRB307-G maintains identical voltage (1000 V) and current (3 A) ratings, uses the same DO-214AA (SMB) package, and operates across the same temperature range (-55°C to 150°C). Both parts are ROHS3 compliant. The primary difference is recovery speed classification (standard vs. fast), which does not affect general-purpose rectification applications. No circuit modification is required.

Q: What is the difference between fast recovery and standard recovery diodes?

A: Fast recovery diodes (≤ 500ns reverse recovery time) switch off more quickly when reverse-biased, reducing switching losses and enabling higher frequency operation. Standard recovery diodes (>500ns) have slower switching characteristics but lower cost. For DC rectification and low-frequency applications, standard recovery diodes are functionally equivalent. For high-frequency switching applications, fast recovery characteristics are necessary.

Q: Can I use a 2 A rated diode in place of the 3 A HS3MB R5G?

A: Only if the actual circuit current does not exceed 2 A. The current rating represents the maximum average rectified current the diode can safely conduct. Using a lower-rated diode in a circuit requiring 3 A will cause excessive heating and premature failure. Verify the actual circuit current requirement before selecting a lower-rated substitute.

Q: Are the RS2MA-13-F and S2MA-13-F suitable substitutes?

A: These parts use the DO-214AC (SMA) package, which has a different footprint than the DO-214AA (SMB) package of the HS3MB R5G. While electrically similar, they are not pin-compatible and require PCB layout modification. They are not recommended as direct substitutes without board redesign.

Q: What does AEC-Q101 qualification mean?

A: AEC-Q101 is an automotive industry standard qualification for discrete semiconductors. Parts meeting this qualification (such as S2MHE3_A/H and S2MHE3_A/I) have undergone enhanced reliability testing and are approved for automotive applications. These parts are suitable for general-purpose applications but are typically higher cost than non-qualified alternatives.

Q: Why does the CGRB307-G have lower forward voltage than the HS3MB R5G?

A: Forward voltage varies based on semiconductor material quality, doping profiles, and manufacturing process. Lower forward voltage indicates more efficient rectification with reduced power dissipation. The CGRB307-G's 1.1 V forward voltage (vs. 1.7 V for HS3MB R5G) results in lower heat generation at rated current, improving thermal performance.

Q: Can I use the CURB207-G in a 3 A application?

A: No. The CURB207-G is rated for maximum 2 A average rectified current. Using it in a 3 A application will exceed its current rating, causing excessive junction temperature rise and potential device failure. Current ratings must not be exceeded.

Q: What is the significance of reverse leakage current?

A: Reverse leakage current (Ir) represents the small current that flows through the diode when reverse-biased. Lower leakage current indicates better blocking characteristics and reduced power loss in the reverse direction. The HS3MB R5G specifies 10 µA @ 1000V, while most substitutes specify 5 µA, indicating improved blocking performance.

Q: Are all listed substitutes available in the same packaging format?

A: All primary substitutes use DO-214AA (SMB) surface mount package and are available in Tape & Reel (TR) or Cut Tape (CT) formats. Verify packaging format (TR vs. CT) with your supplier, as this affects handling and assembly processes but not electrical performance.

Q: What is the operating temperature range significance?

A: The operating temperature range (-55°C to 150°C for HS3MB R5G) defines the junction temperature limits within which the diode maintains specified electrical characteristics. All recommended substitutes operate within this range or an extended range (-65°C to 150°C), ensuring compatibility with the original design's thermal requirements.

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