HS3DB R5G Equivalent & Substitute Parts

Part Overview

The HS3DB R5G is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 200 V DC reverse voltage and 3 A average rectified current in a surface mount DO-214AA (SMB) package. This part is discontinued at DiGi Electronics, necessitating identification of equivalent and substitute components for ongoing design support and procurement.

The HS3DB R5G operates across a junction temperature range of -55°C to 150°C and features fast recovery characteristics with a reverse recovery time of 50 ns. The device is RoHS3 compliant and REACH unaffected, meeting standard industrial compliance requirements.

Substiute Parts

HS3DB R5G
Taiwan Semiconductor CorporationIn Stock: 3935HS3DB R5G Datasheet
HS3DB R5G
Current Part
ES3DB
MDDIn Stock: 10169ES3DB Datasheet
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ES3DB R5G
Taiwan Semiconductor CorporationIn Stock: 1157ES3DB R5G Datasheet
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ES3DBHR5G
Taiwan Semiconductor CorporationIn Stock: 1037ES3DBHR5G Datasheet
ES3DBHR5G
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HS3DB
Taiwan Semiconductor CorporationIn Stock: 5928HS3DB Datasheet
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CURB203-G
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ES2DHE3_A/H
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Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 200 V
Current - Average Rectified (Io) 3 A
Voltage - Forward (Vf) (Max) @ If 1 V @ 3 A
Reverse Recovery Time (trr) 50 ns
Current - Reverse Leakage @ Vr 10 µA @ 200 V
Capacitance @ Vr, F 80 pF @ 4V, 1MHz
Package / Case DO-214AA, SMB
Operating Temperature - Junction -55 to 150 °C
Speed Classification Fast Recovery ≤ 500ns, > 200mA (Io)

Substitute Part Grouping Explanation

Substitution of the HS3DB R5G is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

  • Voltage - DC Reverse (Vr) (Max): 200 V minimum
  • Current - Average Rectified (Io): 3 A minimum
  • Package / Case: DO-214AA (SMB) surface mount
  • Speed Classification: Fast Recovery ≤ 500ns, > 200mA (Io)
  • Operating Temperature Range: -55°C to 150°C minimum

Parametric Equivalent Parts maintain all primary electrical specifications and package requirements, differing only in secondary characteristics such as reverse recovery time, reverse leakage current, or capacitance.

Similar Parts meet the voltage and package requirements but operate at reduced current ratings (2 A instead of 3 A). These parts are suitable for applications where the full 3 A rating is not required.

Parameter Comparison

Manufacturer Part Number Manufacturer Vr (Max) [V] Io [A] Vf (Max) @ If [V] trr [ns] Ir @ Vr [µA] Package Status Packaging Type
HS3DB R5G Taiwan Semiconductor Corporation 200 3 1 @ 3A 50 10 @ 200V DO-214AA (SMB) Discontinued Cut Tape (CT)
ES3DB MDD 200 3 1 @ 3A 35 5 @ 200V DO-214AA (SMB) Active Tape & Reel (TR)
ES3DB R5G Taiwan Semiconductor Corporation 200 3 1 @ 3A 35 10 @ 200V DO-214AA (SMB) Discontinued Cut Tape (CT)
ES3DBHR5G Taiwan Semiconductor Corporation 200 3 1 @ 3A 35 100 @ 200V DO-214AA (SMB) Active Cut Tape (CT)
HS3DB Taiwan Semiconductor Corporation 200 3 1 @ 3A 50 10 @ 200V DO-214AA (SMB) Active Tape & Reel (TR)
CURB203-G Comchip Technology 200 2 1 @ 2A 50 5 @ 200V DO-214AA (SMB) Active Tape & Reel (TR)
ES2D-13-F Diodes Incorporated 200 2 0.92 @ 2A 25 5 @ 200V DO-214AA (SMB) Active Cut Tape (CT) & Digi-Reel®
ES2DA-13-F Diodes Incorporated 200 2 0.92 @ 2A 25 5 @ 200V DO-214AC (SMA) Active Tape & Reel (TR)
ES2DHE3_A/H Vishay General Semiconductor - Diodes Division 200 2 0.9 @ 2A 20 10 @ 200V DO-214AA (SMB) Active Tape & Reel (TR)
ES2DHE3_A/I Vishay General Semiconductor - Diodes Division 200 2 0.9 @ 2A 20 10 @ 200V DO-214AA (SMB) Active Tape & Reel (TR)
ES2DHE3J_A/H Vishay General Semiconductor - Diodes Division 200 2 0.9 @ 2A 20 10 @ 200V DO-214AA (SMB) Active Tape & Reel (TR)

Engineering Selection Recommendations

Parametric Equivalent Selection (Full 3 A Rating):

For direct replacement of the HS3DB R5G with identical current handling capability, the following active parts are available:

  • ES3DB (MDD): Active status, Tape & Reel packaging. Improved reverse recovery time (35 ns vs. 50 ns) and reduced reverse leakage (5 µA vs. 10 µA). Suitable for high-volume production requiring reel format.

  • HS3DB (Taiwan Semiconductor Corporation): Active status, Tape & Reel packaging. Identical electrical specifications to the discontinued HS3DB R5G. Maintains 50 ns reverse recovery time and 10 µA reverse leakage. Recommended for direct form-fit-function replacement.

  • ES3DBHR5G (Taiwan Semiconductor Corporation): Active status, Cut Tape packaging. Improved reverse recovery time (35 ns) but elevated reverse leakage current (100 µA @ 200 V). Suitable for applications where leakage current tolerance is not critical.

Similar Part Selection (2 A Rating):

For applications where 2 A average rectified current is sufficient, the following active parts provide improved performance characteristics:

  • CURB203-G (Comchip Technology): Active status, Tape & Reel packaging. Maintains 50 ns reverse recovery time with reduced reverse leakage (5 µA).

  • ES2D-13-F (Diodes Incorporated): Active status, extensive inventory (130,906 pcs). Significantly improved reverse recovery time (25 ns) and lower forward voltage (920 mV @ 2 A). Available in Cut Tape and Digi-Reel formats.

  • ES2DHE3_A/H, ES2DHE3_A/I, ES2DHE3J_A/H (Vishay General Semiconductor - Diodes Division): Active status, AEC-Q101 automotive qualified. Superior reverse recovery time (20 ns), lower forward voltage (900 mV @ 2 A), and reduced capacitance (18 pF). Suitable for automotive and high-reliability applications.

All recommended parts are RoHS3 compliant and REACH unaffected, maintaining regulatory compliance with the original HS3DB R5G.

Frequently Asked Questions (FAQ)

Q: Can ES3DB be used as a direct replacement for HS3DB R5G?

A: Yes. ES3DB is a parametric equivalent with identical voltage (200 V), current (3 A), and package (DO-214AA SMB) specifications. The primary difference is improved reverse recovery time (35 ns vs. 50 ns) and reduced reverse leakage current (5 µA vs. 10 µA), both of which represent performance improvements. Packaging format differs (Tape & Reel vs. Cut Tape), which may affect procurement and assembly processes.

Q: What is the difference between parametric equivalent and similar parts?

A: Parametric equivalent parts maintain all critical electrical specifications of the original part, including voltage rating, current rating, and package type. Similar parts meet the voltage and package requirements but operate at reduced current ratings. For the HS3DB R5G, parametric equivalents are rated for 3 A, while similar parts are rated for 2 A.

Q: Can I use a 2 A rated diode in place of a 3 A rated diode?

A: Only if the application circuit requires a maximum average rectified current of 2 A or less. Using a 2 A rated part in a circuit designed for 3 A operation will result in device overstress and potential failure. Circuit analysis is required to confirm current requirements before substitution.

Q: What does reverse recovery time (trr) mean, and why does it matter?

A: Reverse recovery time is the interval required for a diode to transition from forward conduction to reverse blocking when the applied voltage reverses. Shorter reverse recovery times reduce switching losses and electromagnetic interference in high-frequency applications. The HS3DB R5G has a trr of 50 ns; equivalent parts with 35 ns or 25 ns trr offer improved performance in switching applications.

Q: Are all recommended parts RoHS3 compliant?

A: Yes. All parametric equivalent and similar parts listed are RoHS3 compliant and REACH unaffected, maintaining regulatory compliance with the original HS3DB R5G.

Q: What is the significance of package format (Cut Tape vs. Tape & Reel)?

A: Cut Tape (CT) packaging is supplied in individual strips suitable for manual handling and small-volume assembly. Tape & Reel (TR) packaging is supplied on continuous reels for automated pick-and-place assembly equipment. Selection depends on production volume and assembly process capabilities. Both formats contain identical components; the difference is logistical.

Q: Why is reverse leakage current important?

A: Reverse leakage current is the small current that flows through a reverse-biased diode. Lower leakage current reduces power dissipation and heat generation, particularly in circuits with high reverse voltage stress. The HS3DB R5G has 10 µA reverse leakage; ES3DB reduces this to 5 µA, while ES3DBHR5G increases it to 100 µA. Application requirements determine acceptable leakage levels.

Q: Can automotive-qualified parts (AEC-Q101) be used in non-automotive applications?

A: Yes. Automotive-qualified parts meet or exceed the reliability and performance standards required for automotive use and are suitable for general industrial and consumer applications. The ES2DHE3 series parts are AEC-Q101 qualified and provide superior performance characteristics compared to the original HS3DB R5G.

Q: What does "Active" product status mean?

A: Active status indicates the part is currently manufactured and available for purchase from authorized distributors. Discontinued status indicates the part is no longer manufactured; existing inventory may be available from secondary sources, but long-term availability is not guaranteed.

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