HS3B R7G Equivalent & Substitute Parts

Part Overview

The HS3B R7G is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 100 V DC reverse voltage and 3 A average rectified current in a DO-214AB (SMC) surface mount package. This part is classified as discontinued at DiGi Electronics, necessitating identification of equivalent and substitute components for ongoing design requirements and production needs. Equivalent parts maintain identical electrical and mechanical specifications, while substitute parts offer compatible performance within the same application category with potential variations in secondary parameters.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	100	V
Current - Average Rectified (Io)	3	A
Voltage - Forward (Vf) (Max) @ If	1	V @ 3 A
Speed	Fast Recovery ≤ 500ns, > 200mA (Io)	—
Reverse Recovery Time (trr)	50	ns
Current - Reverse Leakage @ Vr	10	µA @ 100 V
Mounting Type	Surface Mount	—
Package / Case	DO-214AB, SMC	—
Operating Temperature - Junction	-55 to 150	°C
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the HS3B R7G is determined by strict adherence to the following critical parameters:

Primary Substitution Criteria:

Voltage - DC Reverse (Vr) (Max): 100 V minimum
Current - Average Rectified (Io): 3 A minimum
Mounting Type: Surface Mount
Package / Case: DO-214AB (SMC) or compatible SMC variant

Secondary Compatibility Parameters:

Voltage - Forward (Vf) (Max) @ If: 1 V or lower @ 3 A
Speed: Fast Recovery ≤ 500ns, > 200mA (Io)
Operating Temperature - Junction: -55°C to 150°C minimum range
RoHS Status: ROHS3 Compliant

Parts are grouped into two categories: Parametric Equivalents (identical specifications across all critical parameters) and Similar Manufacturers (equivalent electrical performance with potential variations in secondary parameters such as reverse recovery time, forward voltage, or capacitance).

Parameter Comparison

Manufacturer Part Number	Manufacturer	Vr (Max) [V]	Io [A]	Vf (Max) @ If [V @ A]	Speed	trr [ns]	Ir @ Vr [µA @ V]	Package	Temp Range [°C]	Product Status
HS3B R7G	Taiwan Semiconductor Corporation	100	3	1 @ 3	Fast Recovery ≤ 500ns	50	10 @ 100	DO-214AB (SMC)	-55 to 150	Discontinued
HS3B	Taiwan Semiconductor Corporation	100	3	1 @ 3	Fast Recovery ≤ 500ns	50	10 @ 100	DO-214AB (SMC)	-55 to 150	Active
CURC302-G	Comchip Technology	100	3	1 @ 3	Fast Recovery ≤ 500ns	50	5 @ 100	DO-214AB (SMC)	-55 to 150	Active
ES3B-13-F	Diodes Incorporated	100	3	0.9 @ 3	Fast Recovery ≤ 500ns	25	10 @ 100	DO-214AB (SMC)	-55 to 150	Active
ES3BB-13-F	Diodes Incorporated	100	3	0.9 @ 3	Fast Recovery ≤ 500ns	25	10 @ 100	DO-214AA (SMB)	-55 to 150	Active
ESH3B-E3/57T	Vishay General Semiconductor - Diodes Division	100	3	0.9 @ 3	Fast Recovery ≤ 500ns	40	5 @ 100	DO-214AB (SMC)	-55 to 175	Active
ESH3B-E3/9AT	Vishay General Semiconductor - Diodes Division	100	3	0.9 @ 3	Fast Recovery ≤ 500ns	40	5 @ 100	DO-214AB (SMC)	-55 to 175	Active
ESH3B-M3/57T	Vishay General Semiconductor - Diodes Division	100	3	0.9 @ 3	Fast Recovery ≤ 500ns	40	5 @ 100	DO-214AB (SMC)	-55 to 175	Active
ESH3B-M3/9AT	Vishay General Semiconductor - Diodes Division	100	3	0.9 @ 3	Fast Recovery ≤ 500ns	40	5 @ 100	DO-214AB (SMC)	-55 to 175	Active
ESH3BHE3_A/H	Vishay General Semiconductor - Diodes Division	100	3	0.9 @ 3	Fast Recovery ≤ 500ns	40	5 @ 100	DO-214AB (SMC)	-55 to 175	Active
CGRC502-G	Comchip Technology	100	5	1.15 @ 5	Standard Recovery > 500ns	—	10 @ 100	DO-214AB (SMC)	-55 to 150	Active

Engineering Selection Recommendations

Parametric Equivalent (Direct Replacement):

The HS3B (base part number, active status) from Taiwan Semiconductor Corporation is the direct parametric equivalent to the HS3B R7G. This part maintains identical electrical specifications across all critical parameters including voltage rating, current capacity, forward voltage, recovery speed, and operating temperature range. Selection of HS3B is appropriate for applications requiring exact specification matching with active product availability.

Primary Substitute Options (DO-214AB SMC Package):

The following parts are recommended as primary substitutes based on active product status, full compliance with RoHS3 requirements, and electrical compatibility within the 100 V / 3 A rectifier category:

CURC302-G (Comchip Technology): Maintains identical electrical specifications with marginally lower reverse leakage current (5 µA vs. 10 µA @ 100 V). Fast recovery speed and 50 ns reverse recovery time match the original specification.
ES3B-13-F (Diodes Incorporated): Offers improved performance characteristics with lower forward voltage (0.9 V vs. 1 V @ 3 A) and faster reverse recovery time (25 ns vs. 50 ns). Operating temperature range matches the original specification.
ESH3B-E3/57T, ESH3B-E3/9AT, ESH3B-M3/57T, ESH3B-M3/9AT, ESH3BHE3_A/H (Vishay General Semiconductor - Diodes Division): All variants provide equivalent electrical performance with extended operating temperature range (-55°C to 175°C vs. -55°C to 150°C). Reverse recovery time of 40 ns and forward voltage of 0.9 V @ 3 A represent performance improvements. The ESH3BHE3_A/H variant includes AEC-Q101 automotive qualification.

Alternative Package Consideration:

ES3BB-13-F (Diodes Incorporated): Provides equivalent electrical performance in DO-214AA (SMB) package instead of DO-214AB (SMC). Selection requires PCB layout compatibility with SMB footprint.

Not Recommended for Direct Substitution:

CGRC502-G (Comchip Technology): Rated for 5 A average rectified current, exceeding the 3 A specification of the original part. Standard recovery speed (> 500ns) differs from the fast recovery requirement. This part is suitable only for applications with higher current requirements and relaxed speed specifications.

Frequently Asked Questions (FAQ)

Q: Can the HS3B (active status) be used as a direct replacement for the HS3B R7G (discontinued)?

A: Yes. The HS3B maintains identical electrical and mechanical specifications across all critical parameters. The difference in part number suffix (R7G vs. base designation) reflects packaging or date code variations without affecting functional performance. Direct substitution is appropriate.

Q: What is the primary difference between the HS3B R7G and the Vishay ESH3B series?

A: The ESH3B series (ESH3B-E3/57T, ESH3B-E3/9AT, ESH3B-M3/57T, ESH3B-M3/9AT, ESH3BHE3_A/H) provides improved performance characteristics: lower forward voltage (0.9 V vs. 1 V @ 3 A), faster reverse recovery time (40 ns vs. 50 ns), and extended operating temperature range (-55°C to 175°C vs. -55°C to 150°C). All parts maintain the 100 V / 3 A electrical rating and DO-214AB (SMC) package compatibility.

Q: Is the ES3BB-13-F compatible with the HS3B R7G?

A: The ES3BB-13-F is electrically equivalent but uses a different package: DO-214AA (SMB) instead of DO-214AB (SMC). Substitution requires verification of PCB footprint compatibility. The SMB package is physically larger than the SMC package. Electrical performance is identical to the ES3B-13-F variant.

Q: Why is the CGRC502-G not recommended as a substitute?

A: The CGRC502-G is rated for 5 A average rectified current and exhibits standard recovery speed (> 500ns), both exceeding the specifications of the HS3B R7G (3 A, fast recovery ≤ 500ns). While the 100 V voltage rating is compatible, the higher current rating and different recovery speed indicate this part is designed for different application requirements. Substitution is not appropriate unless the application specifically requires 5 A capacity.

Q: What does "Fast Recovery ≤ 500ns, > 200mA (Io)" mean?

A: This specification indicates the diode exhibits fast recovery characteristics with reverse recovery time not exceeding 500 nanoseconds when the reverse current exceeds 200 milliamps. This parameter is critical for high-frequency switching applications. Parts meeting this specification are interchangeable for applications requiring fast recovery performance.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All parts listed in the parameter comparison table are certified as ROHS3 Compliant, meeting the Restriction of Hazardous Substances Directive requirements. This compliance is maintained across all substitute options.

Q: What is the significance of the ESH3BHE3_A/H automotive qualification?

A: The ESH3BHE3_A/H variant includes AEC-Q101 automotive qualification, indicating compliance with automotive industry reliability and quality standards. This qualification is relevant only for applications requiring automotive-grade components. Non-automotive applications do not require this qualification.

Q: Can I use a substitute part with a lower reverse leakage current?

A: Yes. Parts with lower reverse leakage current (such as CURC302-G and ESH3B variants with 5 µA vs. 10 µA @ 100 V) represent improved performance and are suitable for direct substitution. Lower leakage current reduces power dissipation and improves circuit efficiency.

Q: What is the difference between the various ESH3B packaging codes (E3/57T, E3/9AT, M3/57T, M3/9AT)?

A: These codes represent different tape and reel packaging configurations and manufacturing date codes. All variants maintain identical electrical specifications (100 V / 3 A, fast recovery, 40 ns reverse recovery time, 0.9 V forward voltage @ 3 A). Selection between variants depends on supplier availability and packaging requirements rather than electrical performance.

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