HS3B M6G Equivalent & Substitute Parts

Part Overview

The HS3B M6G is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 100 V DC reverse voltage and 3 A average rectified current in a DO-214AB (SMC) surface mount package. This part is discontinued at DiGi Electronics, necessitating identification of equivalent and substitute components for ongoing design requirements and production needs. Equivalent parts maintain identical electrical and mechanical specifications, while substitute parts offer compatible performance within the same application category with potential variations in secondary parameters.

Substiute Parts

HS3B M6G
Taiwan Semiconductor CorporationIn Stock: 1013HS3B M6G Datasheet
HS3B M6G
Current Part
HS3B
Taiwan Semiconductor CorporationIn Stock: 1126HS3B Datasheet
HS3B
Parametric Equivalent
CGRC502-G
Comchip TechnologyIn Stock: 887CGRC502-G Datasheet
CGRC502-G
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CURC302-G
Comchip TechnologyIn Stock: 750CURC302-G Datasheet
CURC302-G
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ES3B-13-F
Diodes IncorporatedIn Stock: 10183ES3B-13-F Datasheet
ES3B-13-F
Similar
ES3BB-13-F
Diodes IncorporatedIn Stock: 126266ES3BB-13-F Datasheet
ES3BB-13-F
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ESH3B-E3/57T
Vishay General Semiconductor - Diodes DivisionIn Stock: 10475ESH3B-E3/57T Datasheet
ESH3B-E3/57T
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ESH3B-E3/9AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 1078ESH3B-E3/9AT Datasheet
ESH3B-E3/9AT
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ESH3B-M3/57T
Vishay General Semiconductor - Diodes DivisionIn Stock: 884ESH3B-M3/57T Datasheet
ESH3B-M3/57T
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ESH3B-M3/9AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 1170ESH3B-M3/9AT Datasheet
ESH3B-M3/9AT
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ESH3BHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 1135ESH3BHE3_A/H Datasheet
ESH3BHE3_A/H
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ESH3BHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 1129ESH3BHE3_A/I Datasheet
ESH3BHE3_A/I
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RS3B-13-F
Diodes IncorporatedIn Stock: 9168RS3B-13-F Datasheet
RS3B-13-F
Similar
RS3BB-13-F
Diodes IncorporatedIn Stock: 3201RS3BB-13-F Datasheet
RS3BB-13-F
Similar
RS3BHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 831RS3BHE3_A/H Datasheet
RS3BHE3_A/H
Similar
RS3BHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 819RS3BHE3_A/I Datasheet
RS3BHE3_A/I
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S3B-13-F
Diodes IncorporatedIn Stock: 30129S3B-13-F Datasheet
S3B-13-F
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S3B-TP
Micro Commercial CoIn Stock: 8884S3B-TP Datasheet
S3B-TP
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S3BB-13-F
Diodes IncorporatedIn Stock: 19031S3BB-13-F Datasheet
S3BB-13-F
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S3BHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 1366S3BHE3_A/H Datasheet
S3BHE3_A/H
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S3BHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 968S3BHE3_A/I Datasheet
S3BHE3_A/I
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S5BC-13-F
Diodes IncorporatedIn Stock: 6745S5BC-13-F Datasheet
S5BC-13-F
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S5BHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 2628S5BHE3_A/H Datasheet
S5BHE3_A/H
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S5BHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 812S5BHE3_A/I Datasheet
S5BHE3_A/I
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U3B-E3/57T
Vishay General Semiconductor - Diodes DivisionIn Stock: 12243U3B-E3/57T Datasheet
U3B-E3/57T
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U3B-E3/9AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 824U3B-E3/9AT Datasheet
U3B-E3/9AT
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U3B-M3/57T
Vishay General Semiconductor - Diodes DivisionIn Stock: 864U3B-M3/57T Datasheet
U3B-M3/57T
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U3B-M3/9AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 823U3B-M3/9AT Datasheet
U3B-M3/9AT
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ES3BC-HF
Comchip TechnologyIn Stock: 793ES3BC-HF Datasheet
ES3BC-HF
Parametric Equivalent
UF3B_R1_00001
Panjit International Inc.In Stock: 831UF3B_R1_00001 Datasheet
UF3B_R1_00001
Parametric Equivalent
US3BC-HF
Comchip TechnologyIn Stock: 716US3BC-HF Datasheet
US3BC-HF
Parametric Equivalent

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 100 V
Current - Average Rectified (Io) 3 A
Voltage - Forward (Vf) (Max) @ If 1 V @ 3 A V @ A
Speed Fast Recovery ≤ 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns
Current - Reverse Leakage @ Vr 10 µA @ 100 V
Mounting Type Surface Mount
Package / Case DO-214AB, SMC
Operating Temperature - Junction -55 to 150 °C
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the HS3B M6G is determined by the following critical parameters:

Primary Substitution Criteria:

  • Voltage - DC Reverse (Vr) (Max): 100 V minimum
  • Current - Average Rectified (Io): 3 A minimum
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB (SMC) or compatible SMC variant

Secondary Compatibility Factors:

  • Speed classification: Fast Recovery ≤ 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns or lower
  • Operating Temperature Range: -55°C to 150°C minimum
  • RoHS3 Compliance and MSL 1 rating

Parts are grouped into two categories:

Parametric Equivalent: Identical electrical specifications across all primary and secondary parameters. The HS3B (base part number, Active status) from Taiwan Semiconductor Corporation qualifies as a parametric equivalent with identical ratings and performance characteristics.

Similar/Compatible Substitutes: Parts meeting or exceeding primary criteria with variations in secondary parameters such as forward voltage, reverse recovery time, reverse leakage current, or operating temperature range. These include devices from Comchip Technology (CGRC502-G, CURC302-G), Diodes Incorporated (ES3B-13-F, ES3BB-13-F), and Vishay General Semiconductor (ESH3B series variants).

Parameter Comparison

Manufacturer Part Number Manufacturer Vr (Max) [V] Io [A] Vf (Max) @ If [V @ A] Speed trr [ns] Ir @ Vr [µA @ V] Package Tj (Max) [°C] Product Status
HS3B M6G Taiwan Semiconductor 100 3 1 @ 3 Fast Recovery ≤ 500ns 50 10 @ 100 DO-214AB (SMC) 150 Discontinued
HS3B Taiwan Semiconductor 100 3 1 @ 3 Fast Recovery ≤ 500ns 50 10 @ 100 DO-214AB (SMC) 150 Active
CGRC502-G Comchip Technology 100 5 1.15 @ 5 Standard Recovery > 500ns 10 @ 100 DO-214AB (SMC) 150 Active
CURC302-G Comchip Technology 100 3 1 @ 3 Fast Recovery ≤ 500ns 50 5 @ 100 DO-214AB (SMC) 150 Active
ES3B-13-F Diodes Incorporated 100 3 0.9 @ 3 Fast Recovery ≤ 500ns 25 10 @ 100 DO-214AB (SMC) 150 Active
ES3BB-13-F Diodes Incorporated 100 3 0.9 @ 3 Fast Recovery ≤ 500ns 25 10 @ 100 DO-214AA (SMB) 150 Active
ESH3B-E3/57T Vishay General Semiconductor 100 3 0.9 @ 3 Fast Recovery ≤ 500ns 40 5 @ 100 DO-214AB (SMC) 175 Active
ESH3B-E3/9AT Vishay General Semiconductor 100 3 0.9 @ 3 Fast Recovery ≤ 500ns 40 5 @ 100 DO-214AB (SMC) 175 Active
ESH3B-M3/57T Vishay General Semiconductor 100 3 0.9 @ 3 Fast Recovery ≤ 500ns 40 5 @ 100 DO-214AB (SMC) 175 Active
ESH3B-M3/9AT Vishay General Semiconductor 100 3 0.9 @ 3 Fast Recovery ≤ 500ns 40 5 @ 100 DO-214AB (SMC) 175 Active
ESH3BHE3_A/H Vishay General Semiconductor 100 3 0.9 @ 3 Fast Recovery ≤ 500ns 40 5 @ 100 DO-214AB (SMC) 175 Active

Engineering Selection Recommendations

Parametric Equivalent Selection:

The HS3B (base part number, Active status) from Taiwan Semiconductor Corporation is the direct parametric equivalent to the discontinued HS3B M6G. This part maintains identical electrical specifications including 100 V reverse voltage, 3 A average rectified current, 1 V forward voltage at 3 A, 50 ns reverse recovery time, and identical operating temperature range of -55°C to 150°C. Both parts are ROHS3 compliant with MSL 1 rating. The HS3B is currently in Active product status with 1034 pieces in stock, providing immediate availability for replacement applications.

Compatible Substitute Selection:

For applications requiring Active product status with enhanced performance characteristics, the following substitutes are suitable:

Comchip Technology CURC302-G provides identical electrical performance to the HS3B M6G with 100 V reverse voltage, 3 A current rating, and Fast Recovery ≤ 500ns speed classification. This part features lower reverse leakage current (5 µA @ 100 V versus 10 µA), identical forward voltage (1 V @ 3 A), and 50 ns reverse recovery time. CURC302-G is in Active status with 687 pieces in stock.

Diodes Incorporated ES3B-13-F meets all primary substitution criteria with 100 V reverse voltage and 3 A current rating in DO-214AB (SMC) package. This part offers improved forward voltage performance (0.9 V @ 3 A) and faster reverse recovery time (25 ns), with identical operating temperature range and RoHS3 compliance. ES3B-13-F is in Active status with 10,100 pieces in stock.

Vishay General Semiconductor ESH3B series (ESH3B-E3/57T, ESH3B-E3/9AT, ESH3B-M3/57T, ESH3B-M3/9AT, ESH3BHE3_A/H) provides equivalent electrical performance with extended operating temperature range to 175°C. All variants maintain 100 V reverse voltage, 3 A current rating, Fast Recovery ≤ 500ns speed, and improved forward voltage (0.9 V @ 3 A). Reverse recovery time ranges from 40 ns, and reverse leakage current is reduced to 5 µA @ 100 V. The ESH3BHE3_A/H variant includes automotive qualification (AEC-Q101). All Vishay variants are in Active status.

Package Consideration:

The ES3BB-13-F from Diodes Incorporated uses DO-214AA (SMB) package instead of DO-214AB (SMC). This part is electrically equivalent but requires PCB layout modification due to different footprint dimensions. Selection of this part is appropriate only when SMB package compatibility is confirmed in the design.

Higher Current Rating:

The Comchip Technology CGRC502-G is rated for 5 A average rectified current with 100 V reverse voltage. This part is suitable for applications requiring higher current capacity but operates with Standard Recovery speed classification (> 500ns) rather than Fast Recovery, and exhibits higher forward voltage (1.15 V @ 5 A). Selection of this part is appropriate only when higher current capacity is required and slower recovery characteristics are acceptable.

Frequently Asked Questions (FAQ)

Q: Can the HS3B (Active status) directly replace the discontinued HS3B M6G?

A: Yes. The HS3B is a parametric equivalent with identical electrical specifications, package type (DO-214AB SMC), and operating temperature range (-55°C to 150°C). Both parts are ROHS3 compliant with MSL 1 rating. The primary difference is product status: HS3B M6G is discontinued while HS3B is Active with current inventory availability.

Q: What are the key electrical parameters that determine substitution compatibility?

A: The primary parameters are Voltage - DC Reverse (Vr) of 100 V minimum, Current - Average Rectified (Io) of 3 A minimum, and Fast Recovery speed classification (≤ 500ns, > 200mA). Secondary parameters include Reverse Recovery Time (trr) of 50 ns or lower, Operating Temperature Range of -55°C to 150°C minimum, and RoHS3 compliance. All substitute parts listed meet or exceed these criteria.

Q: Why do some substitute parts have lower forward voltage (0.9 V vs. 1 V)?

A: Forward voltage variation within the 100 V / 3 A / Fast Recovery classification reflects manufacturing process differences between suppliers. Lower forward voltage (0.9 V) indicates improved efficiency and reduced power dissipation. Parts with 0.9 V forward voltage (Diodes Incorporated ES3B-13-F and Vishay ESH3B series) are direct substitutes with enhanced performance characteristics.

Q: What is the difference between Fast Recovery and Standard Recovery speed classifications?

A: Fast Recovery diodes have reverse recovery time ≤ 500ns at currents > 200mA, while Standard Recovery diodes have reverse recovery time > 500ns. The HS3B M6G and all recommended substitutes use Fast Recovery classification. The Comchip CGRC502-G uses Standard Recovery classification and is suitable only for applications where slower switching speed is acceptable.

Q: Can the ES3BB-13-F (SMB package) be used instead of the HS3B M6G (SMC package)?

A: The ES3BB-13-F is electrically equivalent but uses DO-214AA (SMB) package instead of DO-214AB (SMC). SMB and SMC packages have different footprint dimensions and land patterns. Substitution requires PCB layout modification and is appropriate only when SMB package compatibility is confirmed in the design.

Q: What is the advantage of Vishay ESH3B series parts with extended temperature range to 175°C?

A: The extended operating temperature range to 175°C (versus 150°C for HS3B M6G) provides additional thermal margin for applications operating at elevated ambient temperatures or with high power dissipation. These parts maintain identical electrical specifications and are suitable for designs requiring higher temperature capability without performance degradation.

Q: Is the Comchip CGRC502-G (5 A rating) suitable as a direct replacement for the HS3B M6G (3 A rating)?

A: The CGRC502-G meets the 100 V reverse voltage requirement and exceeds the 3 A current requirement with 5 A rating. However, it uses Standard Recovery speed classification (> 500ns) instead of Fast Recovery (≤ 500ns), and exhibits higher forward voltage (1.15 V @ 5 A). Substitution is appropriate only for applications where higher current capacity is required and slower switching speed is acceptable.

Q: Are all substitute parts ROHS3 compliant and MSL 1 rated?

A: Yes. All substitute parts listed in this reference are ROHS3 compliant and carry MSL 1 (Unlimited) moisture sensitivity level rating, matching the compliance profile of the HS3B M6G.

Q: What is the inventory status of recommended substitutes?

A: The HS3B (parametric equivalent) has 1034 pieces in stock. Diodes Incorporated ES3B-13-F has the highest inventory at 10,100 pieces. Vishay ESH3B series variants range from 865 to 10,400 pieces. Comchip Technology parts (CURC302-G and CGRC502-G) have 687 and 865 pieces respectively. All recommended parts are in Active product status with current availability.

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