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HS2M R5G Equivalent & Substitute Parts
Part Overview
The HS2M R5G is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 1000 V DC reverse voltage and 2 A average rectified current in a DO-214AA (SMB) surface mount package. This device features fast recovery characteristics with a reverse recovery time of 75 nanoseconds and operates across a junction temperature range of -55°C to 150°C. The part is discontinued at DiGi Electronics, necessitating identification of equivalent alternatives that maintain electrical and mechanical compatibility for ongoing production and repair applications.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 1000 | V |
| Current - Average Rectified (Io) | 2 | A |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 2 A | V |
| Speed | Fast Recovery ≤ 500ns, > 200mA (Io) | — |
| Reverse Recovery Time (trr) | 75 | ns |
| Current - Reverse Leakage @ Vr | 5 µA @ 1000 V | µA |
| Package / Case | DO-214AA, SMB | — |
| Operating Temperature - Junction | -55 to 150 | °C |
| RoHS Status | ROHS3 Compliant | — |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | — |
Substitute Part Grouping Explanation
Substitution of the HS2M R5G is determined by strict equivalence across the following critical parameters:
Primary Substitution Criteria:
- Voltage - DC Reverse (Vr) (Max): 1000 V minimum
- Current - Average Rectified (Io): 2 A minimum
- Package / Case: DO-214AA (SMB) surface mount
- Mounting Type: Surface Mount
- RoHS Status: ROHS3 Compliant
- Moisture Sensitivity Level: 1 (Unlimited)
Secondary Compatibility Factors:
- Reverse Recovery Time (trr): Fast recovery ≤ 500 ns preferred for performance equivalence
- Operating Temperature Range: -55°C to 150°C or compatible subset
- Forward Voltage (Vf): Electrical performance consideration within specified limits
Parts are grouped into two categories:
Direct Equivalents (2 A rated current, DO-214AA package): CURB207-G and S2M-LTP maintain identical current rating and package specifications with fast recovery characteristics.
Functional Alternatives (Higher current rating or different recovery speed): CGRB207-G, CGRB307-G, ER3MB-TP, RS2M-13-F, RS2MA-13-F, S2M-13-F, S2MA-13-F, and S2MHE3_A/H provide electrical compatibility through equivalent or superior voltage and current ratings, though some feature standard recovery speeds or different package formats.
Parameter Comparison
| Part Number | Manufacturer | Vr (Max) [V] | Io [A] | Vf (Max) [V] | Speed | trr [ns] | Package | Temp Range [°C] | Product Status |
|---|---|---|---|---|---|---|---|---|---|
| HS2M R5G | Taiwan Semiconductor Corporation | 1000 | 2 | 1.7 @ 2A | Fast Recovery ≤ 500ns | 75 | DO-214AA (SMB) | -55 to 150 | Discontinued |
| CURB207-G | Comchip Technology | 1000 | 2 | 1.7 @ 2A | Fast Recovery ≤ 500ns | 75 | DO-214AA (SMB) | -55 to 150 | Active |
| CGRB207-G | Comchip Technology | 1000 | 2 | 1.1 @ 2A | Standard Recovery >500ns | — | DO-214AA (SMB) | -55 to 150 | Active |
| CGRB307-G | Comchip Technology | 1000 | 3 | 1.1 @ 3A | Standard Recovery >500ns | — | DO-214AA (SMB) | -55 to 150 | Active |
| ER3MB-TP | Micro Commercial Co | 1000 | 3 | 1.7 @ 3A | Fast Recovery ≤ 500ns | 75 | DO-214AA (SMB) | -55 to 150 | Active |
| RS2M-13-F | Diodes Incorporated | 1000 | 1.5 | 1.3 @ 1.5A | Fast Recovery ≤ 500ns | 500 | DO-214AA (SMB) | -65 to 150 | Active |
| RS2MA-13-F | Diodes Incorporated | 1000 | 1.5 | 1.3 @ 1.5A | Fast Recovery ≤ 500ns | 500 | DO-214AC (SMA) | -65 to 150 | Active |
| S2M-13-F | Diodes Incorporated | 1000 | 1.5 | 1.15 @ 1.5A | Standard Recovery >500ns | — | DO-214AA (SMB) | -65 to 150 | Active |
| S2M-LTP | Micro Commercial Co | 1000 | 2 | 1.15 @ 2A | Fast Recovery ≤ 500ns | — | DO-214AA (SMB) | -55 to 150 | Active |
| S2MA-13-F | Diodes Incorporated | 1000 | 1.5 | 1.15 @ 1.5A | Standard Recovery >500ns | — | DO-214AC (SMA) | -65 to 150 | Active |
| S2MHE3_A/H | Vishay General Semiconductor - Diodes Division | 1000 | 1.5 | 1.15 @ 1.5A | Standard Recovery >500ns | 2000 | DO-214AA (SMB) | -55 to 150 | Active |
Engineering Selection Recommendations
Direct Replacement (Electrical and Mechanical Equivalence):
CURB207-G from Comchip Technology is the primary direct substitute for HS2M R5G. Both devices share identical electrical specifications: 1000 V reverse voltage, 2 A average rectified current, 1.7 V forward voltage at 2 A, fast recovery characteristics with 75 ns reverse recovery time, and DO-214AA (SMB) package format. CURB207-G is currently in active production status with 46,532 pieces in stock, ensuring supply continuity. Both parts are ROHS3 compliant with MSL 1 rating.
Secondary Replacement (Electrical Compatibility with Current Derating):
S2M-LTP from Micro Commercial Co provides functional substitution with identical 2 A current rating and DO-214AA package. This part maintains fast recovery characteristics and operates across the same temperature range (-55°C to 150°C). Forward voltage is slightly lower at 1.15 V versus 1.7 V, representing improved performance. Active production status with 2,606 pieces in stock.
Higher Current Alternatives (Electrical Upgrade Path):
CGRB307-G and ER3MB-TP both provide 3 A current rating in DO-214AA packages, suitable for applications requiring current margin above the 2 A specification. CGRB307-G features standard recovery speed with 1.1 V forward voltage. ER3MB-TP maintains fast recovery characteristics with 75 ns reverse recovery time and 1.7 V forward voltage, matching the original device's recovery performance profile.
Lower Current Alternatives (Current Derating Required):
RS2M-13-F, S2M-13-F, S2MA-13-F, and S2MHE3_A/H are rated for 1.5 A average rectified current. These parts are suitable only for applications where the 2 A specification can be derated to 1.5 A without performance degradation. All maintain 1000 V reverse voltage rating and DO-214AA or DO-214AC package formats. S2MHE3_A/H includes AEC-Q101 automotive qualification.
Package Considerations:
RS2MA-13-F and S2MA-13-F feature DO-214AC (SMA) packages rather than DO-214AA (SMB). These are not mechanically interchangeable with HS2M R5G and require PCB layout modification.
All recommended substitutes maintain ROHS3 compliance and MSL 1 moisture sensitivity rating, ensuring compatibility with standard manufacturing and storage protocols.
Frequently Asked Questions (FAQ)
Q: Can CURB207-G directly replace HS2M R5G without circuit modification?
A: Yes. CURB207-G is electrically and mechanically equivalent to HS2M R5G. Both devices share identical voltage rating (1000 V), current rating (2 A), forward voltage (1.7 V @ 2 A), recovery speed (fast recovery ≤ 500 ns), reverse recovery time (75 ns), and DO-214AA (SMB) package format. No circuit or PCB layout changes are required.
Q: Why are some substitute parts rated for 1.5 A instead of 2 A?
A: Parts such as RS2M-13-F, S2M-13-F, and S2MHE3_A/H are lower current alternatives. These devices can be used only in applications where the circuit design permits operation at 1.5 A maximum. Using a 1.5 A rated device in a circuit requiring 2 A continuous current will result in device overstress and failure.
Q: What is the difference between fast recovery and standard recovery diodes?
A: Fast recovery diodes have reverse recovery times of 500 nanoseconds or less, enabling operation at higher switching frequencies with reduced switching losses. Standard recovery diodes exceed 500 nanoseconds reverse recovery time. HS2M R5G features fast recovery (75 ns). CGRB207-G and S2M-13-F feature standard recovery characteristics. Selection depends on circuit switching frequency requirements.
Q: Can I use a 3 A rated diode (CGRB307-G or ER3MB-TP) in place of the 2 A HS2M R5G?
A: Yes. Higher current rated devices are electrically compatible and provide additional current margin. Both CGRB307-G and ER3MB-TP maintain 1000 V reverse voltage rating and DO-214AA package format. ER3MB-TP preserves fast recovery characteristics (75 ns). CGRB307-G features standard recovery speed. Circuit performance will not be degraded by using a higher current rated device.
Q: Why are RS2MA-13-F and S2MA-13-F listed as alternatives if they use different packages?
A: RS2MA-13-F and S2MA-13-F use DO-214AC (SMA) packages instead of DO-214AA (SMB). These parts are not physically interchangeable with HS2M R5G and require PCB redesign. They are listed for reference only when package change is acceptable in the application.
Q: What does ROHS3 compliance mean for this diode?
A: ROHS3 compliance indicates the device meets Restriction of Hazardous Substances Directive requirements, restricting lead, cadmium, mercury, hexavalent chromium, and specified brominated flame retardants. All listed substitute parts maintain ROHS3 compliance, ensuring compatibility with environmental and regulatory requirements.
Q: Is S2MHE3_A/H suitable for automotive applications?
A: S2MHE3_A/H carries AEC-Q101 automotive qualification, indicating it meets automotive industry reliability and quality standards. This part is suitable for automotive applications. Other listed substitutes do not carry automotive qualification designations.
Q: What is MSL 1 moisture sensitivity level?
A: MSL 1 (Unlimited) indicates the device has unlimited shelf life and requires no special moisture control during storage or handling. All listed substitute parts carry MSL 1 rating, matching HS2M R5G moisture sensitivity characteristics.
Q: Can I use CGRB207-G if my circuit operates at high switching frequencies?
A: CGRB207-G features standard recovery speed (>500 ns) rather than fast recovery. At high switching frequencies, standard recovery diodes generate higher switching losses and may exhibit reduced performance compared to fast recovery devices. For high-frequency applications, CURB207-G or S2M-LTP are preferred due to their fast recovery characteristics.
Q: What is the significance of reverse recovery time (trr) in diode selection?
A: Reverse recovery time is the interval required for a diode to transition from forward conduction to reverse blocking after the applied voltage reverses. Shorter reverse recovery times reduce switching losses and enable higher frequency operation. HS2M R5G specifies 75 ns. Parts with longer trr values (such as S2MHE3_A/H at 2 µs) are suitable for lower frequency applications.
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