HS2D Equivalent & Substitute Parts Reference

Part Overview

The HS2D is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 200 V DC reverse voltage and 2 A average rectified current in a DO-214AA (SMB) surface mount package. This component is classified as discontinued at DiGi Electronics, necessitating identification of equivalent and substitute parts for ongoing design requirements and procurement needs. The HS2D operates across a junction temperature range of -55°C to 150°C and features fast recovery characteristics with a 50 ns reverse recovery time, making it suitable for standard rectification applications requiring moderate switching speeds.

Substiute Parts

HS2D R5G
Taiwan Semiconductor CorporationIn Stock: 851HS2D R5G Datasheet
HS2D R5G
Current Part
HS2D
SURGEIn Stock: 15287HS2D Datasheet
HS2D
Parametric Equivalent
CURB203-G
Comchip TechnologyIn Stock: 4179CURB203-G Datasheet
CURB203-G
Direct
ES2D-13-F
Diodes IncorporatedIn Stock: 130979ES2D-13-F Datasheet
ES2D-13-F
Similar
ES2DA-13-F
Diodes IncorporatedIn Stock: 56797ES2DA-13-F Datasheet
ES2DA-13-F
Similar
ES2DHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 32316ES2DHE3_A/H Datasheet
ES2DHE3_A/H
Similar
ES2DHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 16060ES2DHE3_A/I Datasheet
ES2DHE3_A/I
Similar
ES2DHE3J_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 1165ES2DHE3J_A/H Datasheet
ES2DHE3J_A/H
Similar
ESH2D-E3/52T
Vishay General Semiconductor - Diodes DivisionIn Stock: 10210ESH2D-E3/52T Datasheet
ESH2D-E3/52T
Similar
ESH2D-E3/5BT
Vishay General Semiconductor - Diodes DivisionIn Stock: 10400ESH2D-E3/5BT Datasheet
ESH2D-E3/5BT
Similar
MURS120-13-F
Diodes IncorporatedIn Stock: 49028MURS120-13-F Datasheet
MURS120-13-F
Similar
MURS120-E3/52T
Vishay General Semiconductor - Diodes DivisionIn Stock: 25752MURS120-E3/52T Datasheet
MURS120-E3/52T
Similar
MURS120-E3/5BT
Vishay General Semiconductor - Diodes DivisionIn Stock: 2126MURS120-E3/5BT Datasheet
MURS120-E3/5BT
Similar
MURS120/2
Vishay General Semiconductor - Diodes DivisionIn Stock: 2045MURS120/2 Datasheet
MURS120/2
Similar
MURS120HE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 209251MURS120HE3_A/H Datasheet
MURS120HE3_A/H
Similar
MURS120HE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 978MURS120HE3_A/I Datasheet
MURS120HE3_A/I
Similar
RS2D-13-F
Diodes IncorporatedIn Stock: 53490RS2D-13-F Datasheet
RS2D-13-F
Similar
RS2DHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 813RS2DHE3_A/I Datasheet
RS2DHE3_A/I
Similar
S2D-13-F
Diodes IncorporatedIn Stock: 30188S2D-13-F Datasheet
S2D-13-F
Similar
S2DA-13-F
Diodes IncorporatedIn Stock: 19866S2DA-13-F Datasheet
S2DA-13-F
Similar
S2DHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 792S2DHE3_A/H Datasheet
S2DHE3_A/H
Similar
S2DHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 948S2DHE3_A/I Datasheet
S2DHE3_A/I
Similar
S3DB-TP
Micro Commercial CoIn Stock: 6935S3DB-TP Datasheet
S3DB-TP
Similar
STTH1R02U
STMicroelectronicsIn Stock: 16815STTH1R02U Datasheet
STTH1R02U
Similar
STTH2R02U
STMicroelectronicsIn Stock: 43030STTH2R02U Datasheet
STTH2R02U
Similar
STTH2R02UY
STMicroelectronicsIn Stock: 60377STTH2R02UY Datasheet
STTH2R02UY
Similar
STTH4R02U
STMicroelectronicsIn Stock: 20200STTH4R02U Datasheet
STTH4R02U
Similar
STTH4R02UY
STMicroelectronicsIn Stock: 109776STTH4R02UY Datasheet
STTH4R02UY
Similar
US2D-TP
Micro Commercial CoIn Stock: 3263US2D-TP Datasheet
US2D-TP
Similar
ACURB203-HF
Comchip TechnologyIn Stock: 824ACURB203-HF Datasheet
ACURB203-HF
Parametric Equivalent
ES2DB
MDDIn Stock: 273792ES2DB Datasheet
ES2DB
Parametric Equivalent
ES2DB-HF
Comchip TechnologyIn Stock: 1149ES2DB-HF Datasheet
ES2DB-HF
Parametric Equivalent
UF2D_R1_00001
Panjit International Inc.In Stock: 1987UF2D_R1_00001 Datasheet
UF2D_R1_00001
Parametric Equivalent
US2DB-HF
Comchip TechnologyIn Stock: 770US2DB-HF Datasheet
US2DB-HF
Parametric Equivalent

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 200 V
Current - Average Rectified (Io) 2 A
Voltage - Forward (Vf) (Max) @ If 1 V @ 2 A
Reverse Recovery Time (trr) 50 ns
Current - Reverse Leakage @ Vr 5 µA @ 200 V
Speed Classification Fast Recovery ≤ 500ns, > 200mA (Io)
Package / Case DO-214AA, SMB
Mounting Type Surface Mount
Operating Temperature - Junction -55 to 150 °C
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the HS2D rectifier diode is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

  • Voltage - DC Reverse (Vr) (Max): 200 V minimum
  • Current - Average Rectified (Io): 2 A minimum
  • Package / Case: DO-214AA (SMB) surface mount
  • Speed Classification: Fast Recovery ≤ 500ns, > 200mA (Io)
  • Mounting Type: Surface Mount
  • RoHS Status: ROHS3 Compliant
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)

Secondary Compatibility Parameters:

  • Operating Temperature - Junction: -55°C minimum to 150°C maximum
  • Reverse Recovery Time (trr): ≤ 50 ns preferred
  • Current - Reverse Leakage @ Vr: ≤ 5 µA @ 200 V

Parts are classified as direct equivalents when all primary criteria are met with identical electrical specifications. Parts meeting primary criteria with minor variations in secondary parameters are classified as similar substitutes. Parts with reduced current ratings (1.5 A or 1 A) are classified as parametric equivalents suitable for applications with lower current requirements.

Parameter Comparison

Manufacturer Part Number Manufacturer Vr (Max) [V] Io [A] Vf (Max) @ If [V] trr [ns] Ir @ Vr [µA] Package Tj (Max) [°C] Product Status
HS2D Taiwan Semiconductor Corporation 200 2 1 @ 2 A 50 5 @ 200 V DO-214AA (SMB) 150 Discontinued
HS2D SURGE 200 1.5 1 @ 1.5 A 50 5 @ 200 V DO-214AA (SMB) 150 Active
CURB203-G Comchip Technology 200 2 1 @ 2 A 50 5 @ 200 V DO-214AA (SMB) 150 Active
ES2D-13-F Diodes Incorporated 200 2 0.92 @ 2 A 25 5 @ 200 V DO-214AA (SMB) 150 Active
ES2DA-13-F Diodes Incorporated 200 2 0.92 @ 2 A 25 5 @ 200 V DO-214AC (SMA) 150 Active
ES2DHE3_A/H Vishay General Semiconductor - Diodes Division 200 2 0.9 @ 2 A 20 10 @ 200 V DO-214AA (SMB) 150 Active
ES2DHE3_A/I Vishay General Semiconductor - Diodes Division 200 2 0.9 @ 2 A 20 10 @ 200 V DO-214AA (SMB) 150 Active
ES2DHE3J_A/H Vishay General Semiconductor - Diodes Division 200 2 0.9 @ 2 A 20 10 @ 200 V DO-214AA (SMB) 150 Active
ESH2D-E3/52T Vishay General Semiconductor - Diodes Division 200 2 0.93 @ 2 A 35 2 @ 200 V DO-214AA (SMB) 175 Active
ESH2D-E3/5BT Vishay General Semiconductor - Diodes Division 200 2 0.93 @ 2 A 35 2 @ 200 V DO-214AA (SMB) 175 Active
MURS120-13-F Diodes Incorporated 200 1 0.875 @ 1 A 25 2 @ 200 V DO-214AA (SMB) 175 Active

Engineering Selection Recommendations

Direct Equivalent (Pin-Compatible, Electrical Equivalent):

CURB203-G (Comchip Technology) is the direct equivalent to the HS2D. This part maintains identical electrical specifications: 200 V reverse voltage, 2 A average rectified current, 1 V forward voltage drop at 2 A, and 50 ns reverse recovery time. The CURB203-G is packaged in DO-214AA (SMB) surface mount configuration and is ROHS3 compliant with MSL 1 rating. Product status is active with 4,128 units in stock. This part is suitable for direct substitution in existing HS2D designs without circuit modification.

Similar Substitutes (Electrical Equivalents with Enhanced Performance):

ES2D-13-F (Diodes Incorporated) meets all primary substitution criteria with improved reverse recovery time of 25 ns compared to the HS2D's 50 ns. Forward voltage drop is reduced to 0.92 V at 2 A. This part is available in DO-214AA (SMB) package, ROHS3 compliant, and active status with 130,906 units in stock. The faster recovery time provides enhanced switching performance in rectification circuits.

ES2DHE3_A/H, ES2DHE3_A/I, and ES2DHE3J_A/H (Vishay General Semiconductor - Diodes Division) are automotive-grade alternatives qualified to AEC-Q101. These parts maintain 200 V reverse voltage and 2 A current ratings with improved reverse recovery time of 20 ns. Forward voltage drop is 0.9 V at 2 A. Operating temperature extends to 150°C maximum. These parts are suitable for applications requiring automotive qualification.

ESH2D-E3/52T and ESH2D-E3/5BT (Vishay General Semiconductor - Diodes Division) provide extended junction temperature operation to 175°C with improved reverse leakage current of 2 µA at 200 V. Reverse recovery time is 35 ns. These parts are suitable for high-temperature applications.

Parametric Equivalent (Reduced Current Rating):

HS2D (SURGE) is a parametric equivalent with reduced current rating of 1.5 A compared to the original 2 A specification. This part is suitable for applications with lower current requirements while maintaining 200 V reverse voltage and identical package configuration. Product status is active with 15,200 units in stock.

MURS120-13-F (Diodes Incorporated) is a parametric equivalent with 1 A current rating. This part features improved reverse recovery time of 25 ns and extended operating temperature to 175°C. Forward voltage drop is 0.875 V at 1 A. This part is suitable for lower-current rectification applications.

Package Consideration:

ES2DA-13-F (Diodes Incorporated) is electrically equivalent to ES2D-13-F but packaged in DO-214AC (SMA) surface mount configuration instead of DO-214AA (SMB). This part is not suitable for direct substitution if the PCB layout requires DO-214AA footprint. Selection of this part requires PCB redesign.

Frequently Asked Questions (FAQ)

Q: Can I substitute the HS2D with CURB203-G in my existing design?

A: Yes. CURB203-G is a direct equivalent with identical electrical specifications and DO-214AA (SMB) package. No circuit modification or PCB redesign is required. Both parts are ROHS3 compliant with MSL 1 rating.

Q: What is the difference between ES2D-13-F and the original HS2D?

A: ES2D-13-F maintains the same 200 V reverse voltage and 2 A current rating but features improved reverse recovery time of 25 ns compared to HS2D's 50 ns. Forward voltage drop is slightly lower at 0.92 V versus 1 V. Both use DO-214AA (SMB) packaging. The faster recovery time provides enhanced switching performance.

Q: Are the Vishay ES2DHE3 series parts suitable for automotive applications?

A: Yes. ES2DHE3_A/H, ES2DHE3_A/I, and ES2DHE3J_A/H are automotive-grade parts qualified to AEC-Q101. These parts meet all electrical requirements of the HS2D with improved reverse recovery time of 20 ns and are suitable for automotive rectification circuits.

Q: Can I use MURS120-13-F as a substitute for HS2D?

A: MURS120-13-F is a parametric equivalent suitable only for applications with reduced current requirements. This part is rated for 1 A average rectified current compared to HS2D's 2 A. If your circuit requires 2 A rectified current, MURS120-13-F is not suitable. For lower-current applications, MURS120-13-F offers improved reverse recovery time of 25 ns and extended operating temperature to 175°C.

Q: What is the difference between ES2D-13-F and ES2DA-13-F?

A: Both parts are electrically identical with 200 V reverse voltage, 2 A current rating, and 25 ns reverse recovery time. The difference is package configuration: ES2D-13-F uses DO-214AA (SMB) while ES2DA-13-F uses DO-214AC (SMA). If your PCB is designed for DO-214AA footprint, use ES2D-13-F. ES2DA-13-F requires PCB redesign.

Q: Why do some substitute parts have lower forward voltage drops?

A: Forward voltage drop variations between 0.875 V and 1 V at rated current are within normal manufacturing tolerances for rectifier diodes. Lower forward voltage drops indicate improved efficiency and reduced power dissipation. Parts with lower Vf values (such as MURS120-13-F at 0.875 V or ES2D-13-F at 0.92 V) generate less heat during operation.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All substitute parts listed are ROHS3 compliant with MSL 1 (Unlimited) moisture sensitivity rating, matching the original HS2D specifications.

Q: What does reverse recovery time mean and why does it matter?

A: Reverse recovery time (trr) is the time required for a diode to stop conducting when the applied voltage reverses polarity. Shorter reverse recovery times (such as 20-25 ns in substitute parts) indicate faster switching response, reducing switching losses and enabling higher-frequency operation. The original HS2D has 50 ns trr, while improved substitutes offer 20-35 ns.

Q: Can I use ESH2D-E3/52T or ESH2D-E3/5BT if my circuit operates above 150°C?

A: Yes. ESH2D-E3/52T and ESH2D-E3/5BT are rated for junction temperatures up to 175°C, providing 25°C additional thermal margin compared to the HS2D's 150°C maximum. These parts are suitable for high-temperature applications. Both maintain 200 V reverse voltage and 2 A current ratings with improved reverse leakage current of 2 µA at 200 V.

Request Quote (Ships tomorrow)