HS2B M4G Equivalent & Substitute Parts

Part Overview

The HS2B M4G is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 100 V DC reverse voltage and 2 A average rectified current in a DO-214AA (SMB) surface mount package. This part is discontinued at DiGi Electronics, necessitating identification of equivalent and substitute components for ongoing design support and procurement. The device features fast recovery characteristics with a 50 ns reverse recovery time, suitable for standard rectification applications requiring surface mount implementation.

Substiute Parts

HS2B M4G
Taiwan Semiconductor CorporationIn Stock: 967HS2B M4G Datasheet
HS2B M4G
Current Part
HS2B
Taiwan Semiconductor CorporationIn Stock: 15443HS2B Datasheet
HS2B
Parametric Equivalent
CGRB202-G
Comchip TechnologyIn Stock: 16130CGRB202-G Datasheet
CGRB202-G
Direct
CURB202-G
Comchip TechnologyIn Stock: 811CURB202-G Datasheet
CURB202-G
Direct
ES2B-13-F
Diodes IncorporatedIn Stock: 2202ES2B-13-F Datasheet
ES2B-13-F
Similar
ES2BA-13-F
Diodes IncorporatedIn Stock: 34683ES2BA-13-F Datasheet
ES2BA-13-F
Similar
ES2BHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 3370ES2BHE3_A/H Datasheet
ES2BHE3_A/H
Similar
ES2BHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 7575ES2BHE3_A/I Datasheet
ES2BHE3_A/I
Similar
ESH2B-E3/52T
Vishay General Semiconductor - Diodes DivisionIn Stock: 10269ESH2B-E3/52T Datasheet
ESH2B-E3/52T
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ESH2B-E3/5BT
Vishay General Semiconductor - Diodes DivisionIn Stock: 10407ESH2B-E3/5BT Datasheet
ESH2B-E3/5BT
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ESH2B-M3/52T
Vishay General Semiconductor - Diodes DivisionIn Stock: 780ESH2B-M3/52T Datasheet
ESH2B-M3/52T
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ESH2B-M3/5BT
Vishay General Semiconductor - Diodes DivisionIn Stock: 1124ESH2B-M3/5BT Datasheet
ESH2B-M3/5BT
Similar
ESH2BHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 782ESH2BHE3_A/H Datasheet
ESH2BHE3_A/H
Similar
ESH2BHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 921ESH2BHE3_A/I Datasheet
ESH2BHE3_A/I
Similar
RS2B-13-F
Diodes IncorporatedIn Stock: 1537RS2B-13-F Datasheet
RS2B-13-F
Similar
RS2BA-13-F
Diodes IncorporatedIn Stock: 5243RS2BA-13-F Datasheet
RS2BA-13-F
Similar
RS2BHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 1080RS2BHE3_A/H Datasheet
RS2BHE3_A/H
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RS2BHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 1158RS2BHE3_A/I Datasheet
RS2BHE3_A/I
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S2B-13-F
Diodes IncorporatedIn Stock: 45190S2B-13-F Datasheet
S2B-13-F
Similar
S2BA-13-F
Diodes IncorporatedIn Stock: 30244S2BA-13-F Datasheet
S2BA-13-F
Similar
S2BHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 970S2BHE3_A/H Datasheet
S2BHE3_A/H
Similar
S2BHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 7442S2BHE3_A/I Datasheet
S2BHE3_A/I
Similar
S3BB
Diodes IncorporatedIn Stock: 1045S3BB Datasheet
S3BB
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S3BB-TP
Micro Commercial CoIn Stock: 3138S3BB-TP Datasheet
S3BB-TP
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ACURB202-HF
Comchip TechnologyIn Stock: 911ACURB202-HF Datasheet
ACURB202-HF
Parametric Equivalent
ES2BB-HF
Comchip TechnologyIn Stock: 1049ES2BB-HF Datasheet
ES2BB-HF
Parametric Equivalent
UF2B_R1_00001
Panjit International Inc.In Stock: 1636UF2B_R1_00001 Datasheet
UF2B_R1_00001
Parametric Equivalent
US2BB-HF
Comchip TechnologyIn Stock: 851US2BB-HF Datasheet
US2BB-HF
Parametric Equivalent

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 100 V
Current - Average Rectified (Io) 2 A
Voltage - Forward (Vf) (Max) @ If 1 V @ 2 A
Speed Fast Recovery ≤ 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns
Current - Reverse Leakage @ Vr 5 µA @ 100 V
Mounting Type Surface Mount
Package / Case DO-214AA, SMB
Operating Temperature - Junction -55 to 150 °C
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the HS2B M4G is determined by strict equivalence in the following electrical and mechanical parameters:

Primary Substitution Criteria:

  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 2 A
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA (SMB)
  • Technology: Standard rectifier diode

Secondary Compatibility Parameters:

  • Voltage - Forward (Vf) (Max) @ If: ≤ 1.1 V @ 2 A
  • Speed: Fast Recovery ≤ 500ns, > 200mA (Io)
  • Operating Temperature - Junction: -55°C minimum to 150°C minimum
  • RoHS Status: ROHS3 Compliant

Substitute parts are grouped into three categories: parametric equivalents (identical specifications), direct manufacturers (alternative suppliers with matching electrical characteristics), and similar parts (compatible alternatives with minor parameter variations within acceptable operating ranges).

Parameter Comparison

Manufacturer Part Number Manufacturer Vr (Max) [V] Io [A] Vf (Max) @ If [V @ A] trr [ns] Ir @ Vr [µA] Package Product Status
HS2B M4G Taiwan Semiconductor Corporation 100 2 1 @ 2 50 5 @ 100V DO-214AA (SMB) Discontinued
HS2B Taiwan Semiconductor Corporation 100 2 1 @ 2 50 5 @ 100V DO-214AA (SMB) Active
CGRB202-G Comchip Technology 100 2 1.1 @ 2 5 @ 100V DO-214AA (SMB) Active
CURB202-G Comchip Technology 100 2 1 @ 2 50 5 @ 100V DO-214AA (SMB) Active
ES2B-13-F Diodes Incorporated 100 2 0.92 @ 2 25 5 @ 100V DO-214AA (SMB) Active
ES2BA-13-F Diodes Incorporated 100 2 0.92 @ 2 25 5 @ 100V DO-214AC (SMA) Active
ES2BHE3_A/H Vishay General Semiconductor - Diodes Division 100 2 0.9 @ 2 20 10 @ 50V DO-214AA (SMB) Active
ES2BHE3_A/I Vishay General Semiconductor - Diodes Division 100 2 0.9 @ 2 20 10 @ 50V DO-214AA (SMB) Active
ESH2B-E3/52T Vishay General Semiconductor - Diodes Division 100 2 0.93 @ 2 35 2 @ 100V DO-214AA (SMB) Active
ESH2B-E3/5BT Vishay General Semiconductor - Diodes Division 100 2 0.93 @ 2 35 2 @ 100V DO-214AA (SMB) Active
ESH2B-M3/52T Vishay General Semiconductor - Diodes Division 100 2 0.93 @ 2 35 2 @ 100V DO-214AA (SMB) Active

Engineering Selection Recommendations

Parametric Equivalent (Recommended Primary Substitute):

The HS2B from Taiwan Semiconductor Corporation is the direct parametric equivalent to the HS2B M4G. This part maintains identical electrical specifications including 100 V reverse voltage, 2 A average rectified current, 1 V forward voltage at 2 A, and 50 ns reverse recovery time. The HS2B is currently in active production status with 15,400 pieces in stock, providing immediate availability and supply chain continuity. Both parts are ROHS3 compliant and carry identical compliance certifications.

Direct Manufacturer Alternatives (Comchip Technology):

CURB202-G from Comchip Technology provides full electrical equivalence with identical forward voltage (1 V @ 2 A) and reverse recovery time (50 ns). This part is actively produced and available in 730 units. CGRB202-G offers the same voltage and current ratings with a slightly elevated forward voltage specification (1.1 V @ 2 A) but maintains all other critical parameters. Both Comchip parts are packaged in DO-214AA (SMB) format with ROHS3 compliance.

Similar Alternatives (Diodes Incorporated):

ES2B-13-F and ES2BA-13-F from Diodes Incorporated meet the core voltage and current requirements with improved forward voltage characteristics (0.92 V @ 2 A) and faster reverse recovery time (25 ns). ES2B-13-F maintains the DO-214AA (SMB) package, while ES2BA-13-F uses the DO-214AC (SMA) package. Both are actively produced with substantial inventory availability.

Similar Alternatives (Vishay General Semiconductor - Diodes Division):

ES2BHE3_A/H and ES2BHE3_A/I are automotive-grade parts with AEC-Q101 qualification, featuring lower forward voltage (0.9 V @ 2 A) and faster reverse recovery time (20 ns). These parts are suitable for applications requiring automotive-level reliability. ESH2B-E3/52T, ESH2B-E3/5BT, and ESH2B-M3/52T offer extended junction temperature range (-55°C to 175°C) with improved reverse leakage characteristics (2 µA @ 100 V) and are actively produced with high inventory levels.

All substitute parts listed maintain ROHS3 compliance, MSL Level 1 (unlimited moisture sensitivity), and REACH unaffected status, ensuring regulatory compatibility with the original HS2B M4G specification.

Frequently Asked Questions (FAQ)

Q: Can the HS2B be used as a direct replacement for the HS2B M4G?

A: Yes. The HS2B is a parametric equivalent with identical electrical specifications: 100 V reverse voltage, 2 A average rectified current, 1 V forward voltage at 2 A, and 50 ns reverse recovery time. Both parts use the DO-214AA (SMB) surface mount package and are ROHS3 compliant. The primary difference is product status: HS2B M4G is discontinued while HS2B is in active production.

Q: What are the key parameters that determine substitutability?

A: Substitutability is determined by: (1) Voltage - DC Reverse (Vr) rating of 100 V, (2) Current - Average Rectified (Io) rating of 2 A, (3) Surface mount mounting type, (4) DO-214AA (SMB) package format, and (5) Fast recovery speed classification. Forward voltage, reverse recovery time, and reverse leakage current are secondary parameters that may vary within acceptable ranges for standard rectification applications.

Q: Are there package differences among the substitute parts?

A: Most substitute parts use the DO-214AA (SMB) package, which is mechanically and electrically compatible with the HS2B M4G. The exception is ES2BA-13-F, which uses the DO-214AC (SMA) package. While both are surface mount packages with similar footprints, the SMA package is slightly smaller. Verify PCB layout compatibility before selecting ES2BA-13-F as a substitute.

Q: What is the difference between standard and automotive-grade alternatives?

A: Automotive-grade parts such as ES2BHE3_A/H and ES2BHE3_A/I carry AEC-Q101 qualification, indicating compliance with automotive reliability standards. These parts feature improved reverse recovery time (20 ns versus 50 ns) and lower forward voltage (0.9 V versus 1 V). Automotive-grade parts are suitable for applications requiring enhanced reliability but are not required for general-purpose rectification.

Q: How do forward voltage and reverse recovery time variations affect circuit performance?

A: Forward voltage variations (0.9 V to 1.1 V @ 2 A) affect power dissipation and voltage drop across the diode during conduction. Reverse recovery time variations (20 ns to 50 ns) affect switching speed and electromagnetic interference characteristics. For standard rectification applications, all listed substitutes operate within acceptable performance ranges. High-frequency switching applications may benefit from parts with faster reverse recovery times (20-25 ns).

Q: Are all substitute parts RoHS and REACH compliant?

A: Yes. All substitute parts listed are ROHS3 compliant and REACH unaffected, matching the compliance status of the HS2B M4G. All parts carry MSL Level 1 (unlimited) moisture sensitivity classification, indicating no special moisture protection requirements during storage or handling.

Q: Which substitute offers the best availability?

A: The HS2B from Taiwan Semiconductor Corporation offers the highest inventory level with 15,400 pieces in stock, followed by ESH2B-E3/5BT and ESH2B-E3/52T from Vishay with 10,300 and 10,200 pieces respectively. ES2BA-13-F from Diodes Incorporated has 34,605 pieces available but uses an SMA package rather than SMB.

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