HS1M R3G Equivalent & Substitute Parts

Part Overview

The HS1M R3G is a general-purpose rectifier diode rated for 1000 V DC reverse voltage and 1 A average rectified current in a surface mount DO-214AC (SMA) package. This component is classified as discontinued at DiGi Electronics, necessitating identification of equivalent and substitute parts for ongoing design requirements and procurement needs. The diode features fast recovery characteristics with a reverse recovery time of 75 nanoseconds, making it suitable for applications requiring rapid switching performance.

Substiute Parts

HS1M R3G
Taiwan Semiconductor CorporationIn Stock: 776HS1M R3G Datasheet
HS1M R3G
Current Part
US1M R3G
Taiwan Semiconductor CorporationIn Stock: 19647US1M R3G Datasheet
US1M R3G
Parametric Equivalent
CURA107-G
Comchip TechnologyIn Stock: 13286CURA107-G Datasheet
CURA107-G
Direct
US1M-13-F
Diodes IncorporatedIn Stock: 935409US1M-13-F Datasheet
US1M-13-F
Direct
CGRA4007-G
Comchip TechnologyIn Stock: 52269CGRA4007-G Datasheet
CGRA4007-G
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GS1M-LTP
Micro Commercial CoIn Stock: 88071GS1M-LTP Datasheet
GS1M-LTP
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GS2M-LTP
Micro Commercial CoIn Stock: 26819GS2M-LTP Datasheet
GS2M-LTP
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RS1M-13-F
Diodes IncorporatedIn Stock: 190062RS1M-13-F Datasheet
RS1M-13-F
Similar
RS1MB-13-F
Diodes IncorporatedIn Stock: 24261RS1MB-13-F Datasheet
RS1MB-13-F
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S1M-13-F
Diodes IncorporatedIn Stock: 190458S1M-13-F Datasheet
S1M-13-F
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S1MB-13-F
Diodes IncorporatedIn Stock: 30289S1MB-13-F Datasheet
S1MB-13-F
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S1MHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 589863S1MHE3_A/H Datasheet
S1MHE3_A/H
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S1MHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 96526S1MHE3_A/I Datasheet
S1MHE3_A/I
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STTH110A
STMicroelectronicsIn Stock: 60146STTH110A Datasheet
STTH110A
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US1M-TP
Micro Commercial CoIn Stock: 25304US1M-TP Datasheet
US1M-TP
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US1ME-TP
Micro Commercial CoIn Stock: 15828US1ME-TP Datasheet
US1ME-TP
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US2MA-TP
Micro Commercial CoIn Stock: 205651US2MA-TP Datasheet
US2MA-TP
Similar
ES1M
SMC Diode SolutionsIn Stock: 19225ES1M Datasheet
ES1M
Parametric Equivalent
US1M
EVVO SemiIn Stock: 545371US1M Datasheet
US1M
Parametric Equivalent
US1M
EVVO SemiIn Stock: 545371US1M Datasheet
US1M
Parametric Equivalent
US1M-E3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 7810US1M-E3/5AT Datasheet
US1M-E3/5AT
Parametric Equivalent
US1M-E3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 621465US1M-E3/61T Datasheet
US1M-E3/61T
Parametric Equivalent
US1M-M3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 14622US1M-M3/5AT Datasheet
US1M-M3/5AT
Parametric Equivalent
US1M-M3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 29710US1M-M3/61T Datasheet
US1M-M3/61T
Parametric Equivalent
US1M_R1_00001
Panjit International Inc.In Stock: 3042US1M_R1_00001 Datasheet
US1M_R1_00001
Parametric Equivalent
US1MHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 59390US1MHE3_A/H Datasheet
US1MHE3_A/H
Parametric Equivalent
US1MHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 20152US1MHE3_A/I Datasheet
US1MHE3_A/I
Parametric Equivalent
US1MHM3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 1004US1MHM3_A/H Datasheet
US1MHM3_A/H
Parametric Equivalent
US1MHM3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 994US1MHM3_A/I Datasheet
US1MHM3_A/I
Parametric Equivalent

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 1000 V
Current - Average Rectified (Io) 1 A
Voltage - Forward (Vf) (Max) @ If 1.7 @ 1 A V
Reverse Recovery Time (trr) 75 ns
Current - Reverse Leakage @ Vr 5 @ 1000 V µA
Package / Case DO-214AC, SMA
Operating Temperature - Junction -55 to 150 °C
Mounting Type Surface Mount

Substitute Part Grouping Explanation

Substitute parts for the HS1M R3G are classified into three categories based on electrical and mechanical compatibility:

Parametric Equivalents share identical electrical specifications including voltage rating (1000 V), current rating (1 A), forward voltage (1.7 V @ 1 A), and recovery characteristics (75 ns trr). These parts differ only in packaging format (Tape & Reel versus bulk) and minor capacitance variations that do not affect functional performance.

Direct Substitutes maintain all critical electrical parameters (1000 V, 1 A, 75 ns recovery time, 1.7 V forward voltage) and package compatibility (DO-214AC SMA) but originate from different manufacturers. These parts are functionally interchangeable with the HS1M R3G.

Similar Parts share the same voltage and current ratings and package form factor but exhibit variations in one or more secondary parameters such as forward voltage, recovery time, or reverse leakage current. These parts are suitable for applications where the specific parameter variation does not impact circuit performance.

Key Parameters Determining Substitution:

  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 1 A
  • Package / Case: DO-214AC, SMA (or compatible package)
  • Reverse Recovery Time (trr): 75 ns (for fast recovery equivalents)
  • Operating Temperature Range: -55°C to 150°C minimum

Parameter Comparison

Manufacturer Part Number Manufacturer Vr (Max) [V] Io [A] Vf (Max) @ If [V] trr [ns] Ir @ Vr [µA] Package Product Status Packaging Type
HS1M R3G Taiwan Semiconductor Corporation 1000 1 1.7 @ 1 A 75 5 @ 1000 V DO-214AC, SMA Discontinued Bulk
US1M R3G Taiwan Semiconductor Corporation 1000 1 1.7 @ 1 A 75 5 @ 1000 V DO-214AC, SMA Discontinued Tape & Reel (TR)
CURA107-G Comchip Technology 1000 1 1.7 @ 1 A 75 5 @ 1000 V DO-214AC, SMA Active Tape & Reel (TR)
US1M-13-F Diodes Incorporated 1000 1 1.7 @ 1 A 75 5 @ 1000 V DO-214AC, SMA Active Cut Tape (CT) & Digi-Reel®
CGRA4007-G Comchip Technology 1000 1 1.1 @ 1 A >500 5 @ 1000 V DO-214AC, SMA Active Tape & Reel (TR)
GS1M-LTP Micro Commercial Co 1000 1 1.0 @ 1 A >500 10 @ 1000 V DO-214AC, SMA Active Cut Tape (CT) & Digi-Reel®
GS2M-LTP Micro Commercial Co 1000 2 1.1 @ 2 A >500 5 @ 1000 V DO-214AC, SMA Active Cut Tape (CT)
RS1M-13-F Diodes Incorporated 1000 1 1.3 @ 1 A 500 5 @ 1000 V DO-214AC, SMA Active Cut Tape (CT) & Digi-Reel®
RS1MB-13-F Diodes Incorporated 1000 1 1.3 @ 1 A 500 5 @ 1000 V DO-214AA, SMB Active Cut Tape (CT) & Digi-Reel®
S1M-13-F Diodes Incorporated 1000 1 1.1 @ 1 A 3000 5 @ 1000 V DO-214AC, SMA Active Cut Tape (CT) & Digi-Reel®
S1MB-13-F Diodes Incorporated 1000 1 1.1 @ 1 A 3000 5 @ 1000 V DO-214AA, SMB Active Cut Tape (CT) & Digi-Reel®

Engineering Selection Recommendations

Primary Equivalent (Active Status): The US1M-13-F (Diodes Incorporated) is the recommended direct substitute for the HS1M R3G. This part maintains identical electrical specifications including 1000 V reverse voltage, 1 A current rating, 1.7 V forward voltage at 1 A, and 75 nanosecond reverse recovery time. The part is currently active in production with substantial inventory availability (935,300 pieces). Both parts share DO-214AC SMA package compatibility and identical operating temperature range (-65°C to 150°C for US1M-13-F exceeds the -55°C to 150°C specification of HS1M R3G). RoHS3 compliance and REACH unaffected status are maintained.

Secondary Equivalent (Active Status): The CURA107-G (Comchip Technology) provides an alternative direct substitute with identical electrical performance. This part is active in production with 13,182 pieces in stock. It maintains the 1000 V, 1 A, 75 ns recovery time specifications and DO-214AC SMA package format. The maximum operating temperature is specified as 150°C (versus the -55°C to 150°C range of HS1M R3G). RoHS3 compliance is confirmed.

Parametric Equivalent (Discontinued Status): The US1M R3G (Taiwan Semiconductor Corporation) is a parametric equivalent with identical electrical specifications but differs only in packaging format (Tape & Reel versus bulk). This part is also discontinued at DiGi Electronics, limiting its utility for new procurement.

Similar Parts with Parameter Variations: Parts including CGRA4007-G, GS1M-LTP, RS1M-13-F, S1M-13-F, and their SMB variants (RS1MB-13-F, S1MB-13-F) are suitable for applications where forward voltage, recovery time, or reverse leakage variations do not impact circuit performance. The GS2M-LTP offers increased current capacity (2 A) for applications requiring higher current handling. All similar parts maintain 1000 V reverse voltage rating and are currently active in production.

Frequently Asked Questions (FAQ)

Q: Can US1M-13-F directly replace HS1M R3G without circuit modification?

A: Yes. The US1M-13-F maintains identical electrical specifications including voltage rating (1000 V), current rating (1 A), forward voltage (1.7 V @ 1 A), and reverse recovery time (75 ns). Both parts use the DO-214AC SMA package. No circuit modification is required.

Q: What is the difference between HS1M R3G and US1M R3G?

A: Both parts are manufactured by Taiwan Semiconductor Corporation and share identical electrical specifications. The primary difference is packaging format: HS1M R3G is supplied in bulk, while US1M R3G is supplied in Tape & Reel format. Both are discontinued at DiGi Electronics.

Q: Why is CURA107-G listed as a direct substitute if it has different capacitance specifications?

A: The CURA107-G maintains all critical electrical parameters for rectifier diode operation: 1000 V reverse voltage, 1 A current rating, 1.7 V forward voltage, and 75 ns reverse recovery time. Capacitance is not specified for CURA107-G in the provided data, but this parameter does not affect rectifier functionality in standard applications. The part is functionally equivalent for rectification circuits.

Q: Can I use GS1M-LTP as a substitute for HS1M R3G?

A: GS1M-LTP is a similar part suitable for applications where the parameter variations do not impact performance. Key differences include: forward voltage of 1.0 V (versus 1.7 V), standard recovery time >500 ns (versus 75 ns fast recovery), and reverse leakage of 10 µA (versus 5 µA). The part maintains 1000 V and 1 A ratings and DO-214AC SMA package compatibility. Use this part only if your circuit does not require the fast recovery characteristics of the original HS1M R3G.

Q: What is the difference between DO-214AC (SMA) and DO-214AA (SMB) packages?

A: DO-214AC (SMA) and DO-214AA (SMB) are different surface mount package outlines. SMA is smaller than SMB. Parts such as RS1MB-13-F and S1MB-13-F use the SMB package and require different PCB footprints. These parts are not pin-compatible with HS1M R3G and require PCB redesign.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed in this reference maintain RoHS3 compliance and REACH unaffected status, matching the environmental compliance of the HS1M R3G.

Q: Which substitute part has the highest inventory availability?

A: The US1M-13-F (Diodes Incorporated) has the highest inventory availability with 935,300 pieces in stock, followed by S1M-13-F with 190,400 pieces and RS1M-13-F with 189,953 pieces.

Q: Can I use GS2M-LTP (2 A rated) in place of HS1M R3G (1 A rated)?

A: Yes, from an electrical compatibility standpoint. The GS2M-LTP maintains 1000 V reverse voltage and DO-214AC SMA package compatibility. The higher current rating (2 A) does not prevent operation in a 1 A circuit. However, verify that your circuit design does not depend on the specific forward voltage (1.1 V for GS2M-LTP versus 1.7 V for HS1M R3G) or recovery time characteristics (>500 ns standard recovery versus 75 ns fast recovery).

Q: What is the significance of reverse recovery time (trr) in selecting a substitute?

A: Reverse recovery time determines how quickly the diode transitions from conducting to blocking state. The HS1M R3G has 75 ns fast recovery, suitable for high-frequency switching applications. Substitute parts with longer recovery times (such as S1M-13-F at 3 µs or CGRA4007-G at >500 ns) are appropriate for lower-frequency rectification but may introduce switching losses in high-frequency circuits. Select substitutes based on your application's frequency requirements.

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