HS1JL RVG Equivalent & Substitute Parts

Part Overview

The HS1JL RVG is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 600 V DC reverse voltage and 1 A average rectified current in a Sub SMA surface mount package. This component is classified as Active product status and is ROHS3 compliant with unlimited moisture sensitivity level.

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter ranges while maintaining compatibility with the DO-219AB package footprint. Alternative sources and configurations are documented to support procurement flexibility and design continuity.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	600	V
Current - Average Rectified (Io)	1	A
Voltage - Forward (Vf) (Max) @ If	1.7 @ 1 A	V
Speed Classification	Fast Recovery ≤ 500ns, > 200mA (Io)	-
Reverse Recovery Time (trr)	75	ns
Current - Reverse Leakage @ Vr	5	µA @ 600 V
Package / Case	DO-219AB	-
Mounting Type	Surface Mount	-
Operating Temperature - Junction	-55 to 150	°C
RoHS Status	ROHS3 Compliant	-

Substitute Part Grouping Explanation

Substitution eligibility is determined by the following critical parameters:

Voltage Rating: All substitute parts must maintain 600 V DC reverse voltage (Vr) maximum to ensure equivalent reverse bias protection.

Current Rating: The primary part is rated for 1 A average rectified current. Substitutes with equal or higher current ratings (1 A or 2 A) are acceptable for direct replacement without circuit derating.

Package Compatibility: All substitute parts utilize the DO-219AB package footprint, ensuring mechanical and electrical compatibility with existing PCB layouts.

Speed Classification: Fast recovery diodes with reverse recovery time ≤ 500 ns are grouped as parametric equivalents. Standard recovery diodes (> 500 ns) are classified as similar alternatives with different switching characteristics.

Temperature Range: Operating junction temperature range of -55°C to 150°C is maintained across all primary substitutes. Extended temperature range variants (-55°C to 175°C) are noted where applicable.

Compliance: ROHS3 compliance and unlimited moisture sensitivity level (MSL 1) are consistent across all listed alternatives.

Parameter Comparison

Parameter	HS1JL RVG	ES1JL	S07J-GS18	VS-1EFU06HM3/I	VS-2EFU06HM3/I
Manufacturer	Taiwan Semiconductor	Taiwan Semiconductor	Vishay	Vishay	Vishay
Voltage - DC Reverse (Vr) (Max)	600 V	600 V	600 V	600 V	600 V
Current - Average Rectified (Io)	1 A	1 A	700 mA	1 A	2 A
Voltage - Forward (Vf) (Max) @ If	1.7 V @ 1 A	1.7 V @ 1 A	1.1 V @ 1 A	1.2 V @ 1 A	1.35 V @ 2 A
Speed Classification	Fast Recovery ≤ 500ns	Fast Recovery ≤ 500ns	Standard Recovery > 500ns	Fast Recovery ≤ 500ns	Fast Recovery ≤ 500ns
Reverse Recovery Time (trr)	75 ns	35 ns	1.8 µs	32 ns	55 ns
Current - Reverse Leakage @ Vr	5 µA @ 600 V	5 µA @ 600 V	10 µA @ 600 V	3 µA @ 600 V	3 µA @ 600 V
Package / Case	DO-219AB	DO-219AB	DO-219AB	DO-219AB	DO-219AB
Operating Temperature - Junction	-55 to 150°C	-55 to 150°C	-55 to 150°C	-55 to 175°C	-55 to 175°C
Product Status	Active	Not For New Designs	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Grade	-	-	Automotive	Automotive	Automotive
Qualification	-	-	AEC-Q101	AEC-Q101	AEC-Q101

Engineering Selection Recommendations

Parametric Equivalent - ES1JL: This Taiwan Semiconductor part maintains identical voltage and current ratings with matching forward voltage characteristics. The reverse recovery time of 35 ns is superior to the primary part. However, ES1JL carries "Not For New Designs" product status, restricting its use to legacy system support and existing inventory management only.

Similar Alternative - VS-1EFU06HM3/I: This Vishay FRED Pt® series diode provides equivalent 1 A current rating with improved forward voltage (1.2 V vs. 1.7 V) and faster reverse recovery (32 ns). The part qualifies for automotive applications under AEC-Q101 and extends the operating temperature range to 175°C. This configuration is suitable for new designs requiring enhanced thermal performance.

Similar Alternative - VS-2EFU06HM3/I: This 2 A rated variant from Vishay provides current margin above the 1 A requirement with fast recovery characteristics (55 ns). Automotive qualification and extended temperature range support demanding applications. The higher current rating accommodates circuit designs with future scaling requirements.

Similar Alternative - S07J-GS18: This Vishay general-purpose diode operates at 700 mA, below the 1 A specification of the primary part. Standard recovery classification (1.8 µs) indicates slower switching behavior compared to fast recovery alternatives. Automotive qualification and active product status support production continuity. This part is suitable only for applications where the reduced current rating and slower recovery time are acceptable.

Frequently Asked Questions (FAQ)

Q: Can ES1JL be used as a direct replacement for HS1JL RVG in new product designs?

A: No. ES1JL carries "Not For New Designs" product status and is restricted to legacy system support and existing inventory applications only. For new designs, select VS-1EFU06HM3/I or VS-2EFU06HM3/I.

Q: What is the primary difference between fast recovery and standard recovery classifications?

A: Fast recovery diodes exhibit reverse recovery time ≤ 500 ns, enabling faster switching transitions with reduced switching losses. Standard recovery diodes (> 500 ns) have slower switching characteristics. S07J-GS18 is classified as standard recovery (1.8 µs), while HS1JL RVG, ES1JL, VS-1EFU06HM3/I, and VS-2EFU06HM3/I are fast recovery types.

Q: Is S07J-GS18 suitable as a direct replacement for HS1JL RVG?

A: S07J-GS18 is not a direct replacement. The current rating is 700 mA, below the 1 A specification. Additionally, standard recovery characteristics differ significantly from the fast recovery profile of HS1JL RVG. Use S07J-GS18 only in applications where reduced current rating and slower switching are acceptable.

Q: What are the advantages of VS-1EFU06HM3/I over HS1JL RVG?

A: VS-1EFU06HM3/I provides lower forward voltage (1.2 V vs. 1.7 V), faster reverse recovery (32 ns vs. 75 ns), lower reverse leakage (3 µA vs. 5 µA), and extended operating temperature range (-55°C to 175°C vs. -55°C to 150°C). Automotive qualification under AEC-Q101 supports regulated applications.

Q: Can VS-2EFU06HM3/I be used in place of HS1JL RVG?

A: Yes. VS-2EFU06HM3/I maintains the 600 V voltage rating and provides 2 A current capacity, exceeding the 1 A requirement. Fast recovery characteristics (55 ns) and automotive qualification support direct substitution in applications where the higher current rating is acceptable or beneficial.

Q: Are all substitute parts compatible with the existing PCB layout?

A: Yes. All substitute parts utilize the DO-219AB package footprint, ensuring mechanical and electrical compatibility with PCB layouts designed for HS1JL RVG.

Q: What is the significance of AEC-Q101 qualification?

A: AEC-Q101 qualification indicates the part meets automotive industry reliability and quality standards. VS-1EFU06HM3/I, VS-2EFU06HM3/I, and S07J-GS18 carry this qualification, supporting use in automotive and regulated applications.

Q: How does the reverse recovery time affect circuit performance?

A: Reverse recovery time (trr) determines the switching speed of the diode. Shorter trr values (32-75 ns for fast recovery types) reduce switching losses and enable higher frequency operation. Longer trr values (1.8 µs for standard recovery) result in higher switching losses and are suitable for lower frequency applications.

Q: Are all listed parts ROHS3 compliant?

A: Yes. HS1JL RVG, ES1JL, S07J-GS18, VS-1EFU06HM3/I, and VS-2EFU06HM3/I are all ROHS3 compliant with unlimited moisture sensitivity level (MSL 1).

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