HS1JL R3G Equivalent & Substitute Parts

Part Overview

The HS1JL R3G is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 600 V DC reverse voltage and 1 A average rectified current in a Sub SMA surface mount package. This component is classified as Active product status and is RoHS3 compliant with unlimited moisture sensitivity level (MSL 1).

Substitute parts are identified when equivalent electrical performance and mechanical compatibility are maintained across the specified parameter range. Alternative sources and packaging configurations may be required due to inventory availability, product lifecycle status, or specific application requirements.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	600	V
Current - Average Rectified (Io)	1	A
Voltage - Forward (Vf) (Max) @ If	1.7 @ 1 A	V
Reverse Recovery Time (trr)	75	ns
Current - Reverse Leakage @ Vr	5	µA @ 600 V
Capacitance @ Vr, F	15	pF @ 4V, 1MHz
Package / Case	DO-219AB	Sub SMA
Operating Temperature - Junction	-55 to 150	°C
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1	Unlimited

Substitute Part Grouping Explanation

Substitution eligibility for the HS1JL R3G is determined by the following critical parameters:

Mandatory Matching Parameters:

Voltage - DC Reverse (Vr) (Max): 600 V
Package / Case: DO-219AB (Sub SMA form factor)
Mounting Type: Surface Mount
RoHS Status: ROHS3 Compliant

Allowable Parameter Variations:

Current - Average Rectified (Io): Equal or greater than 1 A
Voltage - Forward (Vf) (Max) @ If: Equal or lower than 1.7 V @ 1 A
Reverse Recovery Time (trr): Equal or lower than 75 ns
Current - Reverse Leakage @ Vr: Equal or lower than 5 µA @ 600 V
Operating Temperature - Junction: Equal or greater than -55°C to 150°C range
Capacitance @ Vr, F: Equal or lower than 15 pF @ 4V, 1MHz

Parts are grouped as Parametric Equivalent when all electrical specifications match within the allowed tolerance range. Parts are grouped as Similar when they meet the mandatory parameters but exceed current rating or offer enhanced performance characteristics.

Parameter Comparison

Parameter	HS1JL R3G	ES1JL	HS1JL RVG	VS-1EFU06HM3/I	VS-2EFU06HM3/I
Manufacturer	Taiwan Semiconductor Corporation	Taiwan Semiconductor Corporation	Taiwan Semiconductor Corporation	Vishay General Semiconductor - Diodes Division	Vishay General Semiconductor - Diodes Division
Voltage - DC Reverse (Vr) (Max)	600 V	600 V	600 V	600 V	600 V
Current - Average Rectified (Io)	1 A	1 A	1 A	1 A	2 A
Voltage - Forward (Vf) (Max) @ If	1.7 V @ 1 A	1.7 V @ 1 A	1.7 V @ 1 A	1.2 V @ 1 A	1.35 V @ 2 A
Reverse Recovery Time (trr)	75 ns	35 ns	75 ns	32 ns	55 ns
Current - Reverse Leakage @ Vr	5 µA @ 600 V	5 µA @ 600 V	5 µA @ 600 V	3 µA @ 600 V	3 µA @ 600 V
Capacitance @ Vr, F	15 pF @ 4V, 1MHz	8 pF @ 4V, 1MHz	15 pF @ 4V, 1MHz	Not specified	Not specified
Package / Case	DO-219AB	DO-219AB	DO-219AB	DO-219AB	DO-219AB
Operating Temperature - Junction	-55°C to 150°C	-55°C to 150°C	-55°C to 150°C	-55°C to 175°C	-55°C to 175°C
Product Status	Active	Not For New Designs	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

HS1JL RVG is the primary substitute for HS1JL R3G. Both parts are manufactured by Taiwan Semiconductor Corporation with identical electrical specifications, Active product status, and equivalent packaging in Cut Tape (CT) format. This substitution maintains full parameter compatibility with no performance degradation.

ES1JL is a parametric equivalent manufactured by Taiwan Semiconductor Corporation with matching voltage and current ratings. However, ES1JL carries "Not For New Designs" product status, indicating end-of-life trajectory. This part exhibits improved reverse recovery time (35 ns versus 75 ns) and reduced capacitance (8 pF versus 15 pF), making it suitable for legacy system maintenance only. New designs should not incorporate ES1JL.

VS-1EFU06HM3/I (Vishay General Semiconductor - Diodes Division) is a similar substitute with identical 600 V / 1 A ratings and DO-219AB packaging. This part demonstrates superior electrical performance with lower forward voltage (1.2 V versus 1.7 V), faster reverse recovery (32 ns versus 75 ns), and lower reverse leakage (3 µA versus 5 µA). VS-1EFU06HM3/I includes AEC-Q101 automotive qualification and extended operating temperature range (-55°C to 175°C). This part is suitable for applications requiring enhanced performance characteristics.

VS-2EFU06HM3/I (Vishay General Semiconductor - Diodes Division) is a similar substitute with doubled current rating (2 A versus 1 A) while maintaining 600 V reverse voltage and DO-219AB packaging. This part is appropriate for applications requiring higher current capacity or design margin. VS-2EFU06HM3/I includes AEC-Q101 automotive qualification and extended operating temperature range.

All substitute parts maintain RoHS3 compliance and MSL 1 (Unlimited) moisture sensitivity level, ensuring compatibility with standard manufacturing and storage protocols.

Frequently Asked Questions (FAQ)

Q: Can ES1JL be used as a direct replacement for HS1JL R3G in new designs?

A: No. Although ES1JL meets all electrical parameter requirements, it carries "Not For New Designs" product status. ES1JL is restricted to legacy system maintenance and repair applications only. New designs must use HS1JL RVG, VS-1EFU06HM3/I, or VS-2EFU06HM3/I.

Q: What is the difference between HS1JL R3G and HS1JL RVG?

A: Both parts are manufactured by Taiwan Semiconductor Corporation with identical electrical specifications: 600 V reverse voltage, 1 A average rectified current, 1.7 V forward voltage, 75 ns reverse recovery time, and DO-219AB packaging. The primary difference is packaging format: HS1JL R3G is supplied in standard packaging, while HS1JL RVG is supplied in Cut Tape (CT) format. Both maintain Active product status.

Q: Are Vishay VS-1EFU06HM3/I and VS-2EFU06HM3/I compatible with HS1JL R3G applications?

A: Both Vishay parts are compatible from a mechanical and electrical standpoint, sharing the DO-219AB package and 600 V reverse voltage rating. VS-1EFU06HM3/I matches the 1 A current rating with superior performance characteristics (lower forward voltage, faster recovery, lower leakage). VS-2EFU06HM3/I provides doubled current capacity (2 A) for applications requiring higher current handling. Both include AEC-Q101 automotive qualification and extended temperature range (-55°C to 175°C).

Q: What packaging formats are available for substitute parts?

A: HS1JL R3G is available in standard packaging. HS1JL RVG is supplied in Cut Tape (CT) format. ES1JL is available in Cut Tape (CT) and Digi-Reel® packaging. VS-1EFU06HM3/I and VS-2EFU06HM3/I are supplied in Tape & Reel (TR) format. All parts use the DO-219AB (Sub SMA) physical package form factor suitable for surface mount assembly.

Q: Do all substitute parts meet RoHS3 compliance requirements?

A: Yes. HS1JL R3G, ES1JL, HS1JL RVG, VS-1EFU06HM3/I, and VS-2EFU06HM3/I are all RoHS3 compliant with MSL 1 (Unlimited) moisture sensitivity level. All parts are REACH unaffected and classified under ECCN EAR99.

Q: What is the operating temperature range for each substitute part?

A: HS1JL R3G, ES1JL, and HS1JL RVG operate from -55°C to 150°C junction temperature. VS-1EFU06HM3/I and VS-2EFU06HM3/I extend the operating range to -55°C to 175°C, providing 25°C additional high-temperature margin.

Q: Which substitute part offers the best electrical performance?

A: VS-1EFU06HM3/I demonstrates the lowest forward voltage (1.2 V versus 1.7 V), fastest reverse recovery time (32 ns versus 75 ns), and lowest reverse leakage current (3 µA versus 5 µA). These characteristics result in reduced power dissipation and improved switching performance. VS-2EFU06HM3/I provides similar performance advantages with doubled current capacity.

Q: Can HS1JL R3G be substituted with a higher current rated part?

A: Yes. VS-2EFU06HM3/I with 2 A current rating is mechanically and electrically compatible with HS1JL R3G applications. The higher current rating provides design margin and does not degrade performance in 1 A applications. However, circuit design must accommodate the different forward voltage characteristics (1.35 V @ 2 A for VS-2EFU06HM3/I versus 1.7 V @ 1 A for HS1JL R3G).

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