HS1JAL Equivalent & Substitute Parts

Part Overview

The HS1JAL is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 600 V DC reverse voltage and 1 A average rectified current in a thin SMA surface mount package. This component is classified as Active product status and complies with ROHS3 and REACH standards. Substitute parts are identified when equivalent electrical performance and mechanical compatibility are required due to inventory constraints, supply chain considerations, or design flexibility within the same application category.

Substiute Parts

HS1JAL

Taiwan Semiconductor CorporationIn Stock: 7150HS1JAL Datasheet

Current PartRFQ

ES1JAL

Taiwan Semiconductor CorporationIn Stock: 2637ES1JAL Datasheet

Parametric EquivalentRFQ

ER1J_R1_00001

Panjit International Inc.In Stock: 9125ER1J_R1_00001 Datasheet

Parametric EquivalentRFQ

ER1JAFC_R1_00001

Panjit International Inc.In Stock: 3927ER1JAFC_R1_00001 Datasheet

Parametric EquivalentRFQ

ES1JF

MDDIn Stock: 45320ES1JF Datasheet

Parametric EquivalentRFQ

US1JAFC_R1_00001

Panjit International Inc.In Stock: 3724US1JAFC_R1_00001 Datasheet

Parametric EquivalentRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the HS1JAL are qualified based on the following electrical and mechanical criteria:

Primary Equivalence Criteria:

• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 1 A
• Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
• Speed Classification: Fast Recovery ≤ 500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: DO-221AC, SMA Flat Leads
• Operating Temperature - Junction: -55°C to 150°C

Secondary Compatibility Parameters:

• Reverse Recovery Time (trr): Variations within fast recovery classification
• Current - Reverse Leakage @ Vr: Variations within 1–5 µA @ 600 V range
• Capacitance @ Vr, F: Variations within 10–15 pF @ 4V, 1MHz range
• RoHS Status: ROHS3 Compliant or RoHS Compliant
• Moisture Sensitivity Level (MSL): 1 (Unlimited)

All substitute parts maintain identical voltage and current ratings, forward voltage characteristics, and thermal operating range. Variations in reverse recovery time, leakage current, and junction capacitance remain within acceptable tolerances for general-purpose rectification applications.

Parameter Comparison

Engineering Selection Recommendations

All substitute parts listed maintain Active product status and comply with environmental and regulatory standards applicable to general-purpose rectifier diodes. Selection among equivalent parts is based on the following factors:

Compliance and Certification: All parts are ROHS3 Compliant or RoHS Compliant and REACH Unaffected, meeting regulatory requirements for electronic component deployment in regulated markets.

Reverse Recovery Time Variations: The HS1JAL exhibits a reverse recovery time of 75 ns. Substitute parts ES1JAL, ER1J_R1_00001, ER1JAFC_R1_00001, and ES1JF offer faster recovery at 35 ns, while US1JAFC_R1_00001 operates at 100 ns. These variations remain within the fast recovery classification and do not alter the functional category of the component.

Reverse Leakage Current: The HS1JAL specifies 1 µA @ 600 V reverse leakage. ES1JF exhibits 5 µA @ 600 V, representing a higher leakage specification within acceptable tolerances for general-purpose applications. All other substitutes maintain 1 µA leakage.

Junction Capacitance: The HS1JAL specifies 13 pF @ 4V, 1MHz. Substitute parts range from 10 pF (US1JAFC_R1_00001) to 15 pF (ES1JAL, ER1J_R1_00001, ER1JAFC_R1_00001, ES1JF). These variations remain within acceptable tolerances for switching and rectification applications.

Manufacturer Availability: Taiwan Semiconductor Corporation (HS1JAL, ES1JAL), Panjit International Inc. (ER1J_R1_00001, ER1JAFC_R1_00001, US1JAFC_R1_00001), and MDD (ES1JF) represent established manufacturers with Active product status and documented compliance certifications.

Frequently Asked Questions (FAQ)

Q: Can ES1JAL be used as a direct replacement for HS1JAL?

A: Yes. ES1JAL is a parametric equivalent manufactured by Taiwan Semiconductor Corporation with identical voltage (600 V), current (1 A), and forward voltage (1.7 V @ 1 A) ratings. Both components use the DO-221AC SMA package with flat leads and operate across the same temperature range (-55°C to 150°C). The reverse recovery time of ES1JAL (35 ns) is faster than HS1JAL (75 ns), but both remain within the fast recovery classification. Both are ROHS3 Compliant with MSL 1 (Unlimited).

Q: What is the difference between ER1J_R1_00001 and ER1JAFC_R1_00001?

A: Both parts are manufactured by Panjit International Inc. and share identical electrical specifications: 600 V reverse voltage, 1 A current rating, 1.7 V forward voltage, 35 ns reverse recovery time, and 1 µA reverse leakage. Both use the DO-221AC SMA package and operate from -55°C to 150°C. The designations reflect internal Panjit product line variations but do not alter functional equivalence for rectification applications.

Q: Why does ES1JF have higher reverse leakage current (5 µA) compared to other substitutes?

A: ES1JF, manufactured by MDD, specifies 5 µA @ 600 V reverse leakage compared to 1 µA for most other substitutes. This variation remains within acceptable tolerances for general-purpose rectifier applications and does not affect the component's classification as a fast recovery diode. The higher leakage does not impact switching performance or forward conduction characteristics.

Q: Are all substitute parts compatible with the same PCB footprint as HS1JAL?

A: Yes. All substitute parts use the DO-221AC package with SMA flat leads, ensuring mechanical and electrical compatibility with PCB layouts designed for HS1JAL. Surface mount assembly processes and reflow profiles remain unchanged across all listed substitutes.

Q: What is the significance of reverse recovery time differences among substitutes?

A: Reverse recovery time (trr) measures the interval required for a diode to transition from forward conduction to reverse blocking. HS1JAL specifies 75 ns, while most substitutes offer 35 ns (faster recovery). US1JAFC_R1_00001 specifies 100 ns (slower recovery). All values remain within the fast recovery classification (≤ 500ns, > 200mA). Faster recovery reduces switching losses in high-frequency applications, while slower recovery does not degrade performance in standard rectification circuits.

Q: Do all substitute parts meet the same environmental and regulatory standards as HS1JAL?

A: Yes. All substitute parts are ROHS3 Compliant or RoHS Compliant and REACH Unaffected. All maintain Moisture Sensitivity Level 1 (Unlimited), indicating no moisture-related handling restrictions. Regulatory compliance is consistent across all listed alternatives.

Q: Can US1JAFC_R1_00001 be used in applications requiring the fastest switching performance?

A: US1JAFC_R1_00001 specifies 100 ns reverse recovery time, which is slower than HS1JAL (75 ns) and other substitutes (35 ns). For applications requiring the fastest switching performance, ES1JAL, ER1J_R1_00001, ER1JAFC_R1_00001, or ES1JF are preferred due to their 35 ns reverse recovery time. However, US1JAFC_R1_00001 remains suitable for standard rectification applications where switching speed is not a critical constraint.

Q: What is the difference between Thin SMA and SMAF package designations?

A: HS1JAL and ES1JAL are designated as Thin SMA, while ER1J_R1_00001, ER1JAFC_R1_00001, US1JAFC_R1_00001, and ES1JF use SMAF or SMAF-C designations. All components use the DO-221AC package with SMA flat leads, ensuring identical PCB footprint compatibility. Package designation variations reflect manufacturer nomenclature but do not alter mechanical or electrical compatibility.