HS1G Equivalent & Substitute Parts

Part Overview

The HS1G is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 400 V DC reverse voltage and 1 A average rectified current in a surface mount DO-214AC (SMA) package. This fast recovery diode with 50 ns reverse recovery time is designed for standard rectification applications requiring compact form factors and reliable performance across industrial temperature ranges. The part is currently active in production with RoHS3 compliance and unlimited moisture sensitivity rating.

Equivalent and substitute parts are identified to address component availability, supply chain continuity, and design flexibility while maintaining electrical and mechanical compatibility within the specified parameter ranges.

Substiute Parts

HS1G
Taiwan Semiconductor CorporationIn Stock: 7278HS1G Datasheet
HS1G
Current Part
ES1G
Good-Ark SemiconductorIn Stock: 415377ES1G Datasheet
ES1G
Parametric Equivalent
HS1G
SURGEIn Stock: 7297HS1G Datasheet
HS1G
Parametric Equivalent
RS1G
Taiwan Semiconductor CorporationIn Stock: 25431RS1G Datasheet
RS1G
Parametric Equivalent
RS1G R3G
Taiwan Semiconductor CorporationIn Stock: 265557RS1G R3G Datasheet
RS1G R3G
Parametric Equivalent
RS1GH
Taiwan Semiconductor CorporationIn Stock: 16067RS1GH Datasheet
RS1GH
Parametric Equivalent
CURA104-G
Comchip TechnologyIn Stock: 1965CURA104-G Datasheet
CURA104-G
Direct
US1G-13-F
Diodes IncorporatedIn Stock: 155328US1G-13-F Datasheet
US1G-13-F
Direct
CGRA4004-G
Comchip TechnologyIn Stock: 20203CGRA4004-G Datasheet
CGRA4004-G
Similar
ES1G-13-F
Diodes IncorporatedIn Stock: 420370ES1G-13-F Datasheet
ES1G-13-F
Similar
GS1G-LTP
Micro Commercial CoIn Stock: 14366GS1G-LTP Datasheet
GS1G-LTP
Similar
GS1GE-TP
Micro Commercial CoIn Stock: 26733GS1GE-TP Datasheet
GS1GE-TP
Similar
GS2G-LTP
Micro Commercial CoIn Stock: 30669GS2G-LTP Datasheet
GS2G-LTP
Similar
RS1G-13-F
Diodes IncorporatedIn Stock: 115102RS1G-13-F Datasheet
RS1G-13-F
Similar
RS1GB-13-F
Diodes IncorporatedIn Stock: 1912RS1GB-13-F Datasheet
RS1GB-13-F
Similar
S1G-13-F
Diodes IncorporatedIn Stock: 156110S1G-13-F Datasheet
S1G-13-F
Similar
S1GB-13-F
Diodes IncorporatedIn Stock: 69736S1GB-13-F Datasheet
S1GB-13-F
Similar
S1GHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 188837S1GHE3_A/H Datasheet
S1GHE3_A/H
Similar
S1GHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 1055149S1GHE3_A/I Datasheet
S1GHE3_A/I
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STTH1R04A
STMicroelectronicsIn Stock: 19331STTH1R04A Datasheet
STTH1R04A
Similar
STTH1R04AY
STMicroelectronicsIn Stock: 26262STTH1R04AY Datasheet
STTH1R04AY
Similar
US1G-E3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 3107US1G-E3/5AT Datasheet
US1G-E3/5AT
Similar
US1G-E3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 178661US1G-E3/61T Datasheet
US1G-E3/61T
Similar
US1G-M3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 16224US1G-M3/5AT Datasheet
US1G-M3/5AT
Similar
US1G-TP
Micro Commercial CoIn Stock: 19143US1G-TP Datasheet
US1G-TP
Similar
US1GHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 59196US1GHE3_A/H Datasheet
US1GHE3_A/H
Similar
US1GHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 26827US1GHE3_A/I Datasheet
US1GHE3_A/I
Similar
US2GA
onsemiIn Stock: 39816US2GA Datasheet
US2GA
Similar
US2GA-TP
Micro Commercial CoIn Stock: 2323US2GA-TP Datasheet
US2GA-TP
Similar
ES1G
Good-Ark SemiconductorIn Stock: 415377ES1G Datasheet
ES1G
Parametric Equivalent
RS1G
Taiwan Semiconductor CorporationIn Stock: 25431RS1G Datasheet
RS1G
Parametric Equivalent
RS1G-E3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 20115RS1G-E3/5AT Datasheet
RS1G-E3/5AT
Parametric Equivalent
RS1G-E3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 24212RS1G-E3/61T Datasheet
RS1G-E3/61T
Parametric Equivalent
RS1G-HF
Comchip TechnologyIn Stock: 716RS1G-HF Datasheet
RS1G-HF
Parametric Equivalent
RS1G_R1_00001
Panjit International Inc.In Stock: 4964RS1G_R1_00001 Datasheet
RS1G_R1_00001
Parametric Equivalent
RS1GHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 8993RS1GHE3_A/H Datasheet
RS1GHE3_A/H
Parametric Equivalent
RS1GHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 5816RS1GHE3_A/I Datasheet
RS1GHE3_A/I
Parametric Equivalent
US1G_R1_00001
Panjit International Inc.In Stock: 505747US1G_R1_00001 Datasheet
US1G_R1_00001
Parametric Equivalent

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 400 V
Current - Average Rectified (Io) 1 A
Voltage - Forward (Vf) (Max) @ If 1.3 @ 1 V @ A
Speed Classification Fast Recovery ≤ 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns
Current - Reverse Leakage @ Vr 5 µA @ 400 V
Mounting Type Surface Mount
Package / Case DO-214AC, SMA
Operating Temperature - Junction -55 to 150 °C
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitute parts for the HS1G are classified into three categories based on electrical parameter alignment and product status:

Parametric Equivalents maintain all critical electrical specifications: 400 V reverse voltage rating, 1 A average rectified current, 1.3 V maximum forward voltage at 1 A, fast recovery speed classification (≤ 500ns), 5 µA reverse leakage current at 400 V, surface mount DO-214AC (SMA) package, and -55°C to 150°C junction temperature range. These parts differ only in reverse recovery time (trr), junction temperature maximum, packaging format (Tape & Reel versus Cut Tape), or manufacturer identity.

Direct Equivalents meet all electrical and mechanical specifications of the HS1G with identical or superior performance characteristics, including reverse recovery time and forward voltage parameters, while maintaining the same package and temperature rating.

Similar Parts satisfy the core voltage, current, and package requirements but deviate in secondary parameters such as recovery speed classification (Standard Recovery >500ns versus Fast Recovery ≤ 500ns), forward voltage characteristics, or reverse leakage current specifications. These parts are suitable for applications where the specific recovery time or leakage characteristics are not critical constraints.

The following key parameters determine substitution eligibility:

  • Voltage - DC Reverse (Vr) (Max): 400 V (mandatory)
  • Current - Average Rectified (Io): 1 A (mandatory)
  • Package / Case: DO-214AC, SMA (mandatory)
  • Mounting Type: Surface Mount (mandatory)
  • Speed Classification: Fast Recovery ≤ 500ns or Standard Recovery >500ns (application-dependent)
  • Voltage - Forward (Vf) (Max) @ If: ≤ 1.3 V @ 1 A (preferred)
  • Operating Temperature - Junction: -55°C minimum, 150°C maximum (preferred)

Parameter Comparison

Manufacturer Part Number Manufacturer Vr (Max) [V] Io [A] Vf (Max) @ If [V @ A] Speed trr [ns] Ir @ Vr [µA @ V] Package Tj (°C) Product Status
HS1G Taiwan Semiconductor Corporation 400 1 1.3 @ 1 Fast Recovery ≤ 500ns 50 5 @ 400 DO-214AC (SMA) -55 to 150 Active
ES1G Good-Ark Semiconductor 400 1 1.3 @ 1 Fast Recovery ≤ 500ns 35 5 @ 400 DO-214AC (SMA) -55 to 125 Active
HS1G SURGE 400 1 1.3 @ 1 Fast Recovery ≤ 500ns 50 5 @ 400 DO-214AC (SMA) -55 to 150 Active
RS1G Taiwan Semiconductor Corporation 400 1 1.3 @ 1 Fast Recovery ≤ 500ns 150 5 @ 400 DO-214AC (SMA) -55 to 150 Active
RS1G R3G Taiwan Semiconductor Corporation 400 1 1.3 @ 1 Fast Recovery ≤ 500ns 150 5 @ 400 DO-214AC (SMA) -55 to 150 Discontinued at DiGi Electronics
RS1GH Taiwan Semiconductor Corporation 400 1 1.3 @ 1 Fast Recovery ≤ 500ns 150 5 @ 400 DO-214AC (SMA) -55 to 150 Active
CURA104-G Comchip Technology 400 1 1.3 @ 1 Fast Recovery ≤ 500ns 50 5 @ 400 DO-214AC (SMA) -55 to 150 Active
US1G-13-F Diodes Incorporated 400 1 1.3 @ 1 Fast Recovery ≤ 500ns 50 5 @ 400 DO-214AC (SMA) -65 to 150 Active
CGRA4004-G Comchip Technology 400 1 1.1 @ 1 Standard Recovery >500ns 5 @ 400 DO-214AC (SMA) -55 to 150 Active
ES1G-13-F Diodes Incorporated 400 1 1.25 @ 1 Fast Recovery ≤ 500ns 25 5 @ 400 DO-214AC (SMA) -55 to 150 Active
GS1G-LTP Micro Commercial Co 400 1 1.0 @ 1 Standard Recovery >500ns 10 @ 400 DO-214AC (SMA) -55 to 150 Not For New Designs

Engineering Selection Recommendations

For Active Production Designs:

Select ES1G-13-F (Diodes Incorporated) or CURA104-G (Comchip Technology) as primary substitutes. Both parts maintain fast recovery speed classification (≤ 500ns), meet all voltage and current specifications, and carry active product status with RoHS3 compliance. ES1G-13-F offers superior reverse recovery time (25 ns) compared to the HS1G (50 ns), providing enhanced switching performance. CURA104-G matches the HS1G reverse recovery time (50 ns) exactly while maintaining identical electrical characteristics.

US1G-13-F (Diodes Incorporated) is suitable as a secondary substitute, offering extended lower operating temperature range (-65°C minimum) and identical fast recovery performance. This part is appropriate for applications requiring enhanced low-temperature performance.

For Automotive or Qualified Applications:

RS1GH (Taiwan Semiconductor Corporation) is the designated substitute for automotive-grade requirements. This part carries AEC-Q101 qualification, maintains all core electrical specifications, and is available in Tape & Reel packaging suitable for high-volume production environments.

For Cost-Optimized Designs:

CGRA4004-G (Comchip Technology) provides a lower forward voltage characteristic (1.1 V @ 1 A versus 1.3 V @ 1 A), reducing power dissipation in rectification circuits. However, this part operates with Standard Recovery speed classification (>500ns), making it unsuitable for applications requiring fast switching transients or high-frequency rectification.

Parts to Avoid for New Designs:

GS1G-LTP (Micro Commercial Co) carries "Not For New Designs" status and exhibits higher reverse leakage current (10 µA @ 400 V versus 5 µA @ 400 V), making it unsuitable for new product development.

RS1G R3G (Taiwan Semiconductor Corporation) is discontinued at DiGi Electronics and should not be selected for new designs despite active inventory status.

Frequently Asked Questions (FAQ)

Q: Can ES1G replace HS1G in all applications?

A: ES1G is a parametric equivalent with superior reverse recovery time (35 ns versus 50 ns). It maintains identical voltage, current, and package specifications. The faster recovery time provides improved switching performance and is compatible with all applications designed for the HS1G. The only consideration is the maximum junction temperature, which is 125°C for ES1G versus 150°C for HS1G; verify that your application does not require the full 150°C rating.

Q: What is the difference between Fast Recovery and Standard Recovery classifications?

A: Fast Recovery diodes (≤ 500ns reverse recovery time) are designed for high-frequency switching applications and provide reduced switching losses. Standard Recovery diodes (>500ns) are suitable for lower-frequency rectification where switching speed is not critical. CGRA4004-G and GS1G-LTP use Standard Recovery technology and are not interchangeable with HS1G in applications requiring fast switching transients.

Q: Are all substitute parts available in the same packaging format?

A: No. The HS1G is supplied in Tape & Reel (TR) format. Substitute parts are available in multiple packaging formats: Cut Tape (CT), Cut Tape & Digi-Reel, and Bag. Verify packaging compatibility with your assembly process before selection. For high-volume production, Tape & Reel format is standard; for lower volumes, Cut Tape or Digi-Reel formats may be appropriate.

Q: Can I use US1G-13-F in place of HS1G?

A: Yes. US1G-13-F is a direct equivalent with identical electrical specifications and fast recovery performance. It offers an extended lower operating temperature range (-65°C to 150°C versus -55°C to 150°C), making it suitable for applications requiring enhanced low-temperature performance. All other parameters match the HS1G specification.

Q: Why does ES1G-13-F have a lower reverse recovery time than HS1G?

A: Reverse recovery time (trr) is a manufacturing characteristic that varies between semiconductor manufacturers and process technologies. ES1G-13-F achieves 25 ns trr through optimized semiconductor processing, compared to 50 ns for HS1G. Both values fall within the Fast Recovery classification (≤ 500ns). The faster recovery time of ES1G-13-F results in lower switching losses and improved efficiency in high-frequency applications.

Q: Is RoHS3 compliance mandatory for all substitute parts?

A: All listed substitute parts carry RoHS3 compliance certification, matching the HS1G specification. This ensures compatibility with environmental regulations and procurement requirements across industrial and consumer applications.

Q: What is the significance of the DO-214AC (SMA) package designation?

A: DO-214AC and SMA are equivalent package designations for the same surface mount diode package. Both terms refer to a compact, two-terminal surface mount package measuring approximately 4.5 mm × 2.6 mm × 1.6 mm. All substitute parts use this identical package, ensuring mechanical and electrical compatibility with existing PCB layouts and assembly processes.

Q: Can CURA104-G be used in applications requiring the full -55°C to 150°C temperature range?

A: CURA104-G specifies a maximum junction temperature of 150°C but does not explicitly state a minimum operating temperature in the provided data. Verify the minimum operating temperature specification with the manufacturer before selecting this part for applications requiring operation below -55°C.

Q: Why is RS1GH recommended for automotive applications?

A: RS1GH carries AEC-Q101 qualification, which is the automotive industry standard for discrete semiconductor reliability and quality assurance. This qualification ensures the part meets stringent automotive requirements for temperature cycling, moisture resistance, and long-term reliability. Use RS1GH for automotive-grade designs; standard industrial-grade parts do not carry this certification.

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