HS1DL RVG Equivalent & Substitute Parts

Part Overview

The HS1DL RVG is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 200 V DC reverse voltage and 1 A average rectified current in a Sub SMA surface mount package. This component is classified as Active product status and complies with RoHS3 and REACH regulations. Substitute parts are identified when equivalent electrical performance and mechanical compatibility are required due to component availability, supply chain considerations, or design optimization within the specified parameter ranges.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	200	V
Current - Average Rectified (Io)	1	A
Voltage - Forward (Vf) (Max) @ If	950 mV @ 1 A	mV
Speed	Fast Recovery ≤ 500ns, > 200mA (Io)	—
Reverse Recovery Time (trr)	50	ns
Current - Reverse Leakage @ Vr	5	µA @ 200 V
Package / Case	DO-219AB	—
Mounting Type	Surface Mount	—
Operating Temperature - Junction	-55 to 150	°C
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitute parts for the HS1DL RVG are classified into two categories based on electrical and mechanical compatibility:

Parametric Equivalent: Parts that maintain identical or superior electrical specifications across all critical parameters while preserving the same package form factor and mounting technology. The parametric equivalent must satisfy the following criteria:

Voltage - DC Reverse (Vr) (Max): 200 V (minimum requirement)
Current - Average Rectified (Io): 1 A (minimum requirement)
Voltage - Forward (Vf) (Max) @ If: ≤ 950 mV @ 1 A
Speed: Fast Recovery ≤ 500ns, > 200mA (Io)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature - Junction: -55°C to 150°C (minimum range)
RoHS Status: ROHS3 Compliant

Similar Parts: Components that share the same reverse voltage rating and package form factor but differ in current rating, recovery time characteristics, or temperature range. These parts are suitable for applications where the specified current or thermal performance requirements differ from the original design.

Parameter Comparison

Parameter	HS1DL RVG	ES1DL	RS07D-GS08	VS-1EFH02-M3/I	VS-2EFH02HM3/I
Manufacturer	Taiwan Semiconductor	Taiwan Semiconductor	Vishay	Vishay	Vishay
Voltage - DC Reverse (Vr) (Max)	200 V	200 V	200 V	200 V	200 V
Current - Average Rectified (Io)	1 A	1 A	500 mA	1 A	2 A
Voltage - Forward (Vf) (Max) @ If	950 mV @ 1 A	950 mV @ 1 A	1.15 V @ 700 mA	930 mV @ 1 A	950 mV @ 2 A
Speed	Fast Recovery ≤ 500ns, > 200mA	Fast Recovery ≤ 500ns, > 200mA	Fast Recovery ≤ 500ns, > 200mA	Fast Recovery ≤ 500ns, > 200mA	Fast Recovery ≤ 500ns, > 200mA
Reverse Recovery Time (trr)	50 ns	35 ns	150 ns	16 ns	25 ns
Current - Reverse Leakage @ Vr	5 µA @ 200 V	5 µA @ 200 V	10 µA @ 200 V	2 µA @ 200 V	2 µA @ 200 V
Package / Case	DO-219AB	DO-219AB	DO-219AB	DO-219AB	DO-219AB
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Operating Temperature - Junction	-55 to 150°C	-55 to 150°C	-55 to 150°C	-65 to 175°C	-65 to 175°C
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)
Automotive Grade	—	—	AEC-Q101	—	AEC-Q101

Engineering Selection Recommendations

ES1DL (Parametric Equivalent): The ES1DL is a direct parametric equivalent to the HS1DL RVG. Both components share identical voltage and current ratings, forward voltage characteristics, and operating temperature range. The ES1DL exhibits superior reverse recovery time performance (35 ns versus 50 ns) and lower junction capacitance (10 pF versus 20 pF), resulting in improved switching characteristics. Both parts maintain ROHS3 compliance and MSL 1 rating. The ES1DL is suitable for direct substitution in applications where the HS1DL RVG is specified.

VS-1EFH02-M3/I (Parametric Equivalent): The VS-1EFH02-M3/I is a parametric equivalent manufactured by Vishay. This component meets the 200 V reverse voltage and 1 A current requirements with superior forward voltage performance (930 mV @ 1 A versus 950 mV @ 1 A). The reverse recovery time is significantly faster (16 ns versus 50 ns), and reverse leakage current is lower (2 µA versus 5 µA). The operating temperature range extends to 175°C, providing enhanced thermal margin. ROHS3 compliance and MSL 1 rating are maintained. This part is suitable for direct substitution.

RS07D-GS08 (Similar Part - Lower Current Rating): The RS07D-GS08 is a 500 mA rated diode suitable for applications requiring lower current capacity than the HS1DL RVG. This component maintains the 200 V reverse voltage rating and DO-219AB package form factor. The reverse recovery time is longer (150 ns), and reverse leakage current is higher (10 µA). This part carries AEC-Q101 automotive qualification. The RS07D-GS08 is applicable only in designs where the maximum current requirement does not exceed 500 mA.

VS-2EFH02HM3/I (Similar Part - Higher Current Rating): The VS-2EFH02HM3/I is a 2 A rated diode suitable for applications requiring higher current capacity than the HS1DL RVG. This component maintains the 200 V reverse voltage rating and DO-219AB package form factor. The reverse recovery time is faster (25 ns), and reverse leakage current is lower (2 µA). This part carries AEC-Q101 automotive qualification and operates to 175°C. The VS-2EFH02HM3/I is applicable in designs where the maximum current requirement exceeds 1 A.

Frequently Asked Questions (FAQ)

Q: Can the ES1DL be used as a direct replacement for the HS1DL RVG?

A: Yes. The ES1DL meets all electrical and mechanical requirements for direct substitution. Both components are rated for 200 V reverse voltage, 1 A average rectified current, and share identical forward voltage characteristics and operating temperature range. Both are ROHS3 compliant with MSL 1 rating. The ES1DL exhibits improved reverse recovery time and lower capacitance.

Q: What is the difference between the HS1DL RVG and VS-1EFH02-M3/I?

A: Both components are parametric equivalents with identical voltage and current ratings. The primary differences are manufacturer (Taiwan Semiconductor versus Vishay), reverse recovery time (50 ns versus 16 ns), reverse leakage current (5 µA versus 2 µA), and maximum operating temperature (150°C versus 175°C). The VS-1EFH02-M3/I offers superior switching performance and thermal margin.

Q: Can the RS07D-GS08 replace the HS1DL RVG in all applications?

A: No. The RS07D-GS08 is rated for 500 mA maximum average rectified current, compared to 1 A for the HS1DL RVG. This part is suitable only for applications where the circuit current requirement does not exceed 500 mA. The RS07D-GS08 also exhibits longer reverse recovery time (150 ns versus 50 ns).

Q: Is the VS-2EFH02HM3/I suitable for applications designed for the HS1DL RVG?

A: The VS-2EFH02HM3/I can be used in applications designed for the HS1DL RVG when higher current capacity is beneficial or required. The 2 A rating provides additional current margin. Both components share the same 200 V reverse voltage rating and DO-219AB package. The VS-2EFH02HM3/I exhibits faster recovery time and lower leakage current. Thermal design considerations may differ due to higher current handling capability.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All listed substitute parts—ES1DL, RS07D-GS08, VS-1EFH02-M3/I, and VS-2EFH02HM3/I—are ROHS3 compliant and carry MSL 1 (Unlimited) moisture sensitivity rating, matching the HS1DL RVG compliance profile.

Q: What is the significance of reverse recovery time differences among these diodes?

A: Reverse recovery time (trr) affects switching speed and electromagnetic interference characteristics. The HS1DL RVG has a trr of 50 ns. The ES1DL (35 ns), VS-1EFH02-M3/I (16 ns), and VS-2EFH02HM3/I (25 ns) all exhibit faster recovery. The RS07D-GS08 (150 ns) is slower. Faster recovery time reduces switching losses and improves high-frequency performance. Selection depends on circuit operating frequency and efficiency requirements.

Q: Do any substitute parts carry automotive qualification?

A: Yes. The RS07D-GS08 and VS-2EFH02HM3/I both carry AEC-Q101 automotive qualification. The HS1DL RVG, ES1DL, and VS-1EFH02-M3/I do not list automotive qualification. AEC-Q101 qualification is required for automotive applications.

Q: Can the HS1DL RVG be used in applications requiring extended temperature operation?

A: The HS1DL RVG operates from -55°C to 150°C. For applications requiring operation to 175°C, the VS-1EFH02-M3/I or VS-2EFH02HM3/I are suitable alternatives, both rated to -65°C to 175°C.

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