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HS1DL RUG Equivalent & Substitute Parts
Part Overview
The HS1DL RUG is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 200 V DC reverse voltage and 1 A average rectified current in a Sub SMA surface mount package. This component is classified as Active product status and complies with ROHS3 and REACH requirements. Substitute parts are identified when equivalent electrical performance and mechanical compatibility are required due to component availability, supply chain considerations, or design flexibility within specified parameter tolerances.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 200 | V |
| Current - Average Rectified (Io) | 1 | A |
| Voltage - Forward (Vf) (Max) @ If | 950 mV @ 1 A | mV |
| Reverse Recovery Time (trr) | 50 | ns |
| Current - Reverse Leakage @ Vr | 5 | µA @ 200 V |
| Package / Case | DO-219AB | - |
| Mounting Type | Surface Mount | - |
| Operating Temperature - Junction | -55 to 150 | °C |
| RoHS Status | ROHS3 Compliant | - |
Substitute Part Grouping Explanation
Substitute parts for the HS1DL RUG are classified into two categories based on electrical and mechanical compatibility:
Parametric Equivalents maintain identical or superior electrical specifications across all critical parameters: 200 V reverse voltage rating, 1 A average rectified current, DO-219AB package, surface mount configuration, and operating temperature range of -55°C to 150°C. These parts are direct functional replacements with no circuit redesign required.
Similar Parts share the same reverse voltage rating (200 V) and package type (DO-219AB) but differ in one or more electrical specifications such as average rectified current, forward voltage, reverse recovery time, or reverse leakage current. Selection of similar parts requires circuit-level evaluation to confirm performance acceptability within the application.
The following parameters determine substitution eligibility:
- Voltage - DC Reverse (Vr) (Max): Must equal or exceed 200 V
- Package / Case: Must be DO-219AB
- Mounting Type: Must be Surface Mount
- Operating Temperature Range: Must accommodate application requirements
Parameter Comparison
| Parameter | HS1DL RUG | ES1DL | HS1DL RVG | RS07D-GS08 | VS-1EFH02-M3/I | VS-2EFH02HM3/I |
|---|---|---|---|---|---|---|
| Manufacturer | Taiwan Semiconductor | Taiwan Semiconductor | Taiwan Semiconductor | Vishay | Vishay | Vishay |
| Voltage - DC Reverse (Vr) (Max) | 200 V | 200 V | 200 V | 200 V | 200 V | 200 V |
| Current - Average Rectified (Io) | 1 A | 1 A | 1 A | 500 mA | 1 A | 2 A |
| Voltage - Forward (Vf) (Max) @ If | 950 mV @ 1 A | 950 mV @ 1 A | 950 mV @ 1 A | 1.15 V @ 700 mA | 930 mV @ 1 A | 950 mV @ 2 A |
| Reverse Recovery Time (trr) | 50 ns | 35 ns | 50 ns | 150 ns | 16 ns | 25 ns |
| Current - Reverse Leakage @ Vr | 5 µA @ 200 V | 5 µA @ 200 V | 5 µA @ 200 V | 10 µA @ 200 V | 2 µA @ 200 V | 2 µA @ 200 V |
| Package / Case | DO-219AB | DO-219AB | DO-219AB | DO-219AB | DO-219AB | DO-219AB |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature - Junction | -55 to 150°C | -55 to 150°C | -55 to 150°C | -55 to 150°C | -65 to 175°C | -65 to 175°C |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
| Product Status | Active | Active | Active | Active | Active | Active |
Engineering Selection Recommendations
Parametric Equivalent Selection:
ES1DL and HS1DL RVG are parametric equivalents of HS1DL RUG, maintaining identical voltage and current ratings with DO-219AB packaging. ES1DL demonstrates improved reverse recovery time (35 ns versus 50 ns) and reduced junction capacitance (10 pF versus 20 pF), resulting in faster switching characteristics. HS1DL RVG maintains identical electrical specifications to the main part with Cut Tape packaging. Both parts are ROHS3 compliant and Active product status, suitable for direct substitution in applications where the specified parameters are required.
Similar Part Selection:
RS07D-GS08 (Vishay) is rated for 500 mA average rectified current, half the 1 A rating of HS1DL RUG. This part is suitable only for applications with maximum current requirements not exceeding 500 mA. RS07D-GS08 carries AEC-Q101 automotive qualification and is available in high inventory (20,200 units).
VS-1EFH02-M3/I (Vishay FRED Pt® series) matches the 1 A current rating and provides superior reverse recovery time (16 ns versus 50 ns) and lower reverse leakage current (2 µA versus 5 µA). Extended operating temperature range (-65°C to 175°C) accommodates wider thermal environments. This part is suitable for applications requiring improved switching performance.
VS-2EFH02HM3/I (Vishay FRED Pt® series) is rated for 2 A average rectified current, exceeding the 1 A requirement of HS1DL RUG. This part provides superior reverse recovery time (25 ns) and lower reverse leakage current (2 µA). AEC-Q101 automotive qualification and extended temperature range (-65°C to 175°C) are included. Selection is appropriate for applications requiring higher current capacity or improved thermal performance.
All substitute parts maintain ROHS3 compliance and Active product status.
Frequently Asked Questions (FAQ)
Q: Can ES1DL be used as a direct replacement for HS1DL RUG?
A: Yes. ES1DL is a parametric equivalent with identical voltage (200 V), current (1 A), and package (DO-219AB) specifications. The improved reverse recovery time (35 ns versus 50 ns) and reduced capacitance (10 pF versus 20 pF) represent performance enhancements with no negative impact on circuit operation.
Q: What is the difference between HS1DL RVG and HS1DL RUG?
A: HS1DL RVG and HS1DL RUG are parametrically identical in electrical specifications. The difference is packaging format: HS1DL RVG is supplied in Cut Tape (CT), while HS1DL RUG packaging is not specified. Both are suitable for identical applications.
Q: Can RS07D-GS08 replace HS1DL RUG in all applications?
A: No. RS07D-GS08 is rated for 500 mA average rectified current, while HS1DL RUG is rated for 1 A. RS07D-GS08 is suitable only for applications where maximum current does not exceed 500 mA. Forward voltage is also higher (1.15 V @ 700 mA versus 950 mV @ 1 A), affecting power dissipation characteristics.
Q: What are the advantages of VS-1EFH02-M3/I over HS1DL RUG?
A: VS-1EFH02-M3/I provides faster reverse recovery time (16 ns versus 50 ns), lower reverse leakage current (2 µA versus 5 µA), and extended operating temperature range (-65°C to 175°C versus -55°C to 150°C). Forward voltage is slightly lower (930 mV @ 1 A versus 950 mV @ 1 A). These characteristics result in improved switching performance and reduced power dissipation.
Q: When should VS-2EFH02HM3/I be selected instead of HS1DL RUG?
A: VS-2EFH02HM3/I is selected when applications require current capacity exceeding 1 A (rated for 2 A) or when improved switching performance (25 ns reverse recovery time) and lower leakage current (2 µA) are beneficial. Extended temperature range (-65°C to 175°C) and AEC-Q101 automotive qualification support demanding thermal and reliability environments.
Q: Are all substitute parts available in the same package format?
A: All substitute parts use DO-219AB surface mount package. Packaging formats (Cut Tape, Tape & Reel, Digi-Reel) differ by supplier and inventory management, but the physical component package remains identical, ensuring PCB footprint compatibility.
Q: Do all substitute parts meet ROHS3 compliance?
A: Yes. All listed substitute parts (ES1DL, HS1DL RVG, RS07D-GS08, VS-1EFH02-M3/I, VS-2EFH02HM3/I) are ROHS3 compliant and maintain Active product status.
Q: What is the impact of reverse recovery time differences on circuit performance?
A: Reverse recovery time (trr) affects switching speed and electromagnetic interference characteristics. Faster recovery times (lower trr values) reduce switching losses and EMI generation. ES1DL (35 ns), VS-1EFH02-M3/I (16 ns), and VS-2EFH02HM3/I (25 ns) provide faster recovery than HS1DL RUG (50 ns), resulting in improved efficiency in high-frequency switching applications.
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