HS1DL RTG Equivalent & Substitute Parts

Part Overview

The HS1DL RTG is a general-purpose surface mount rectifier diode manufactured by Taiwan Semiconductor Corporation. This component operates at 200 V DC reverse voltage with 1 A average rectified current in a Sub SMA package configuration. The part maintains Active product status and is RoHS3 compliant with unlimited moisture sensitivity level (MSL 1).

Substitute parts are identified when equivalent electrical performance and mechanical compatibility are maintained across the specified parameter set. Alternative sources and packaging configurations may be required due to inventory availability, supply chain considerations, or specific application requirements.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	200	V
Current - Average Rectified (Io)	1	A
Voltage - Forward (Vf) (Max) @ If	950 mV @ 1 A	mV
Reverse Recovery Time (trr)	50	ns
Current - Reverse Leakage @ Vr	5	µA @ 200 V
Speed Classification	Fast Recovery ≤ 500ns, > 200mA (Io)	—
Package / Case	DO-219AB	—
Mounting Type	Surface Mount	—
Operating Temperature - Junction	-55°C ~ 150°C	°C
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitute parts for the HS1DL RTG are classified based on strict electrical and mechanical parameter alignment. The primary substitution criteria are:

Critical Parameters for Substitution:

Voltage - DC Reverse (Vr) (Max): 200 V minimum
Current - Average Rectified (Io): 1 A minimum
Package / Case: DO-219AB (Sub SMA compatible)
Mounting Type: Surface Mount
Operating Temperature Range: -55°C minimum to 150°C maximum
RoHS Status: ROHS3 Compliant

Parametric Equivalents maintain identical electrical specifications and are direct functional replacements. These parts satisfy all critical parameters without performance degradation.

Similar Parts meet the core voltage and current requirements but may exhibit variations in secondary parameters such as reverse recovery time, forward voltage characteristics, or temperature operating range. These parts are suitable for applications where the primary electrical specifications are the controlling factors.

Parameter Comparison

Part Number	Manufacturer	Vr (Max) [V]	Io [A]	Vf (Max) [mV]	trr [ns]	Ir @ Vr [µA]	Package	Temp Range [°C]	RoHS
HS1DL RTG	Taiwan Semiconductor Corporation	200	1	950 @ 1A	50	5 @ 200V	DO-219AB	-55 ~ 150	ROHS3
ES1DL	Taiwan Semiconductor Corporation	200	1	950 @ 1A	35	5 @ 200V	DO-219AB	-55 ~ 150	ROHS3
HS1DL RVG	Taiwan Semiconductor Corporation	200	1	950 @ 1A	50	5 @ 200V	DO-219AB	-55 ~ 150	ROHS3
RS07D-GS08	Vishay General Semiconductor - Diodes Division	200	0.5	1150 @ 0.7A	150	10 @ 200V	DO-219AB	-55 ~ 150	ROHS3
VS-1EFH02-M3/I	Vishay General Semiconductor - Diodes Division	200	1	930 @ 1A	16	2 @ 200V	DO-219AB	-65 ~ 175	ROHS3
VS-2EFH02HM3/I	Vishay General Semiconductor - Diodes Division	200	2	950 @ 2A	25	2 @ 200V	DO-219AB	-65 ~ 175	ROHS3

Engineering Selection Recommendations

Parametric Equivalents (Direct Replacements):

ES1DL and HS1DL RVG are parametric equivalents of HS1DL RTG. Both parts are manufactured by Taiwan Semiconductor Corporation, maintain identical voltage and current ratings, and operate within the same temperature range. ES1DL exhibits improved reverse recovery time (35 ns versus 50 ns) and reduced junction capacitance (10 pF versus 20 pF), resulting in faster switching characteristics. HS1DL RVG maintains identical electrical specifications to the main part with alternative packaging configuration (Cut Tape versus standard packaging). All three parts carry ROHS3 compliance and MSL 1 rating.

Similar Parts (Functional Alternatives):

RS07D-GS08 (Vishay) is rated for 500 mA average rectified current, which is below the 1 A specification of HS1DL RTG. This part is suitable only for applications where current requirements do not exceed 500 mA. RS07D-GS08 carries AEC-Q101 automotive qualification and exhibits longer reverse recovery time (150 ns).

VS-1EFH02-M3/I (Vishay FRED Pt® series) maintains 1 A current rating with improved reverse recovery time (16 ns) and lower reverse leakage current (2 µA). Operating temperature range extends to -65°C to 175°C. Forward voltage is reduced to 930 mV at 1 A.

VS-2EFH02HM3/I (Vishay FRED Pt® series) is rated for 2 A average rectified current, providing current margin above the 1 A requirement. This part exhibits superior reverse recovery time (25 ns) and lower reverse leakage current (2 µA). Operating temperature range extends to -65°C to 175°C. AEC-Q101 automotive qualification is included.

All substitute parts maintain DO-219AB package compatibility and ROHS3 compliance with the main part.

Frequently Asked Questions (FAQ)

Q: Can ES1DL be used as a direct replacement for HS1DL RTG?

A: Yes. ES1DL is a parametric equivalent manufactured by Taiwan Semiconductor Corporation with identical voltage (200 V), current (1 A), and forward voltage (950 mV @ 1 A) specifications. Both parts use DO-219AB packaging and operate across -55°C to 150°C. ES1DL exhibits faster reverse recovery time (35 ns versus 50 ns), which represents improved performance in switching applications.

Q: What is the difference between HS1DL RTG and HS1DL RVG?

A: HS1DL RVG is a parametric equivalent with identical electrical specifications. The primary difference is packaging configuration: HS1DL RVG is supplied in Cut Tape (CT) format, while HS1DL RTG uses standard packaging. Both parts maintain the same DO-219AB case and electrical performance.

Q: Can RS07D-GS08 replace HS1DL RTG in all applications?

A: No. RS07D-GS08 is rated for 500 mA average rectified current, which is 50% of the HS1DL RTG 1 A rating. This part is suitable only for applications where current requirements do not exceed 500 mA. RS07D-GS08 also exhibits longer reverse recovery time (150 ns versus 50 ns) and higher reverse leakage current (10 µA versus 5 µA).

Q: What are the advantages of VS-1EFH02-M3/I over HS1DL RTG?

A: VS-1EFH02-M3/I (Vishay FRED Pt® series) maintains 1 A current rating with significantly faster reverse recovery time (16 ns versus 50 ns) and lower reverse leakage current (2 µA versus 5 µA). Operating temperature range is extended to -65°C to 175°C. Forward voltage is reduced to 930 mV at 1 A. These characteristics result in improved switching efficiency and reduced power dissipation in high-frequency applications.

Q: Is VS-2EFH02HM3/I suitable for HS1DL RTG applications?

A: Yes. VS-2EFH02HM3/I is rated for 2 A average rectified current, providing 100% current margin above the 1 A requirement. This part maintains 200 V reverse voltage rating and DO-219AB packaging. Superior reverse recovery time (25 ns) and lower reverse leakage current (2 µA) provide performance benefits. Extended operating temperature range (-65°C to 175°C) and AEC-Q101 automotive qualification are included.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed (ES1DL, HS1DL RVG, RS07D-GS08, VS-1EFH02-M3/I, and VS-2EFH02HM3/I) carry ROHS3 compliance status. All parts maintain MSL 1 (Unlimited) moisture sensitivity level.

Q: What is the significance of reverse recovery time in diode selection?

A: Reverse recovery time (trr) determines the speed at which a diode transitions from forward conduction to reverse blocking. Shorter reverse recovery time reduces switching losses and enables higher frequency operation. HS1DL RTG exhibits 50 ns trr. ES1DL provides 35 ns, VS-1EFH02-M3/I provides 16 ns, and VS-2EFH02HM3/I provides 25 ns. Applications requiring high-frequency switching benefit from reduced trr values.

Q: Can HS1DL RTG be used in automotive applications?

A: HS1DL RTG does not carry AEC-Q101 automotive qualification. RS07D-GS08 and VS-2EFH02HM3/I both include AEC-Q101 qualification for automotive applications. For automotive use, these qualified alternatives are recommended.

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