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HS1DL RHG Equivalent & Substitute Parts
Part Overview
The HS1DL RHG is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 200 V DC reverse voltage and 1 A average rectified current. This surface mount diode operates in the Sub SMA package (DO-219AB) and is classified as a fast recovery device with a reverse recovery time of 50 ns. The part maintains Active product status and is ROHS3 compliant with unlimited moisture sensitivity rating.
Substitute parts are identified when equivalent electrical performance and mechanical compatibility are required due to inventory constraints, manufacturing discontinuation, or design optimization needs. The following parts maintain functional equivalence within the specified parameter ranges.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 200 | V |
| Current - Average Rectified (Io) | 1 | A |
| Voltage - Forward (Vf) (Max) @ If | 950 mV @ 1 A | mV |
| Reverse Recovery Time (trr) | 50 | ns |
| Current - Reverse Leakage @ Vr | 5 | µA @ 200 V |
| Package / Case | DO-219AB | Sub SMA |
| Mounting Type | Surface Mount | |
| Operating Temperature - Junction | -55°C ~ 150°C | |
| RoHS Status | ROHS3 Compliant |
Substitute Part Grouping Explanation
Substitute parts are classified into two categories based on electrical and mechanical parameter alignment:
Parametric Equivalents maintain identical or superior electrical specifications across all critical parameters: reverse voltage (200 V), average rectified current (1 A), forward voltage (950 mV @ 1 A), package type (DO-219AB Sub SMA), and operating temperature range (-55°C ~ 150°C). These parts are direct functional replacements with no circuit redesign required.
Similar Parts share the same reverse voltage rating (200 V) and package form factor (DO-219AB) but differ in one or more of the following parameters: average rectified current rating, forward voltage characteristics, reverse recovery time, or reverse leakage current. Selection of similar parts requires circuit-level evaluation to confirm compatibility with application current and thermal requirements.
The key parameters determining substitution eligibility are:
- Voltage - DC Reverse (Vr) (Max): 200 V
- Package / Case: DO-219AB
- Mounting Type: Surface Mount
- Current - Average Rectified (Io): 1 A (for parametric equivalents)
Parameter Comparison
| Part Number | Manufacturer | Vr (Max) [V] | Io [A] | Vf (Max) @ If [mV] | trr [ns] | Ir @ Vr [µA] | Package | Temp Range [°C] | Classification |
|---|---|---|---|---|---|---|---|---|---|
| HS1DL RHG | Taiwan Semiconductor | 200 | 1 | 950 @ 1 A | 50 | 5 @ 200 V | DO-219AB | -55 ~ 150 | Main Part |
| ES1DL | Taiwan Semiconductor | 200 | 1 | 950 @ 1 A | 35 | 5 @ 200 V | DO-219AB | -55 ~ 150 | Parametric Equivalent |
| HS1DL RVG | Taiwan Semiconductor | 200 | 1 | 950 @ 1 A | 50 | 5 @ 200 V | DO-219AB | -55 ~ 150 | Parametric Equivalent |
| RS07D-GS08 | Vishay General Semiconductor | 200 | 0.5 | 1150 @ 0.7 A | 150 | 10 @ 200 V | DO-219AB | -55 ~ 150 | Similar Part |
| VS-1EFH02-M3/I | Vishay General Semiconductor | 200 | 1 | 930 @ 1 A | 16 | 2 @ 200 V | DO-219AB | -65 ~ 175 | Similar Part |
| VS-2EFH02HM3/I | Vishay General Semiconductor | 200 | 2 | 950 @ 2 A | 25 | 2 @ 200 V | DO-219AB | -65 ~ 175 | Similar Part |
Engineering Selection Recommendations
Parametric Equivalents (ES1DL, HS1DL RVG) are direct substitutes for the HS1DL RHG. Both parts maintain Active product status, ROHS3 compliance, and identical electrical ratings for reverse voltage, average rectified current, and forward voltage. The ES1DL offers improved reverse recovery time (35 ns versus 50 ns) and reduced junction capacitance (10 pF versus 20 pF), resulting in superior switching performance. The HS1DL RVG maintains identical electrical characteristics to the main part with different packaging format (Cut Tape versus standard packaging). Both parametric equivalents are suitable for direct circuit substitution without design modification.
Similar Parts (RS07D-GS08, VS-1EFH02-M3/I, VS-2EFH02HM3/I) share the 200 V reverse voltage rating and DO-219AB package form factor but differ in current rating or performance characteristics. The RS07D-GS08 is rated for 500 mA average rectified current and includes AEC-Q101 automotive qualification; this part is suitable only for applications requiring less than 500 mA. The VS-1EFH02-M3/I and VS-2EFH02HM3/I are Vishay FRED Pt® series devices with superior reverse recovery time (16 ns and 25 ns respectively) and lower reverse leakage current (2 µA). The VS-1EFH02-M3/I maintains 1 A rating with extended operating temperature range (-65°C ~ 175°C). The VS-2EFH02HM3/I is rated for 2 A and includes AEC-Q101 automotive qualification. Selection of similar parts requires verification that application current requirements and thermal operating conditions align with the specified ratings.
All listed parts maintain ROHS3 compliance, unlimited moisture sensitivity rating (MSL 1), and REACH unaffected status, ensuring regulatory compatibility with the main part.
Frequently Asked Questions (FAQ)
Q: Can ES1DL be used as a direct replacement for HS1DL RHG?
A: Yes. The ES1DL is a parametric equivalent with identical reverse voltage (200 V), average rectified current (1 A), forward voltage (950 mV @ 1 A), and operating temperature range (-55°C ~ 150°C). The ES1DL features improved reverse recovery time (35 ns versus 50 ns) and lower junction capacitance (10 pF versus 20 pF), making it functionally superior for switching applications. No circuit modification is required.
Q: What is the difference between HS1DL RHG and HS1DL RVG?
A: Both parts are manufactured by Taiwan Semiconductor Corporation and maintain identical electrical specifications: 200 V reverse voltage, 1 A average rectified current, 950 mV forward voltage, and 50 ns reverse recovery time. The primary difference is packaging format: HS1DL RHG uses standard packaging while HS1DL RVG is supplied in Cut Tape format. Both are suitable for direct substitution.
Q: Can RS07D-GS08 replace HS1DL RHG in all applications?
A: No. The RS07D-GS08 is rated for 500 mA average rectified current, which is half the 1 A rating of the HS1DL RHG. This part is suitable only for applications with maximum current requirements not exceeding 500 mA. The RS07D-GS08 includes AEC-Q101 automotive qualification and is manufactured by Vishay General Semiconductor.
Q: What are the advantages of VS-1EFH02-M3/I over HS1DL RHG?
A: The VS-1EFH02-M3/I maintains the same 200 V reverse voltage and 1 A average rectified current ratings but offers superior performance characteristics: reverse recovery time of 16 ns (versus 50 ns), lower reverse leakage current of 2 µA (versus 5 µA), and extended operating temperature range of -65°C ~ 175°C (versus -55°C ~ 150°C). Forward voltage is slightly lower at 930 mV versus 950 mV. These improvements result in reduced switching losses and improved thermal performance.
Q: Is VS-2EFH02HM3/I compatible with HS1DL RHG applications?
A: The VS-2EFH02HM3/I shares the same 200 V reverse voltage rating and DO-219AB package but is rated for 2 A average rectified current. This part is suitable for applications requiring higher current capacity than the 1 A HS1DL RHG. The VS-2EFH02HM3/I features superior reverse recovery time (25 ns) and lower reverse leakage current (2 µA). AEC-Q101 automotive qualification is included. Circuit evaluation is required to confirm thermal and electrical compatibility.
Q: Do all substitute parts have the same package dimensions?
A: Yes. All listed parts use the DO-219AB package form factor (Sub SMA), ensuring mechanical compatibility with existing PCB layouts and assembly processes. Mounting type is Surface Mount for all parts.
Q: Are there compliance or regulatory differences between the main part and substitutes?
A: All parts maintain ROHS3 compliance, unlimited moisture sensitivity rating (MSL 1), and REACH unaffected status. The RS07D-GS08 and VS-2EFH02HM3/I include AEC-Q101 automotive qualification, which is not specified for the main part HS1DL RHG. This qualification is relevant only for automotive applications.
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