HS1DL R3G Equivalent & Substitute Parts

Part Overview

The HS1DL R3G is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 200 V DC reverse voltage and 1 A average rectified current. This surface mount component operates in the Sub SMA package (DO-219AB) and is classified as a fast recovery diode with a reverse recovery time of 50 ns. The part is Active in product status and fully compliant with RoHS3 and REACH regulations.

Equivalent and substitute parts are identified when component availability is limited, supply chain disruptions occur, or design flexibility is required while maintaining electrical and mechanical compatibility within specified parameters.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	200	V
Current - Average Rectified (Io)	1	A
Voltage - Forward (Vf) (Max) @ If	950 mV @ 1 A	mV
Speed Classification	Fast Recovery ≤ 500ns, > 200mA (Io)	-
Reverse Recovery Time (trr)	50	ns
Current - Reverse Leakage @ Vr	5	µA @ 200 V
Capacitance @ Vr, F	20	pF @ 4V, 1MHz
Package / Case	DO-219AB	-
Mounting Type	Surface Mount	-
Operating Temperature - Junction	-55 to 150	°C
RoHS Status	ROHS3 Compliant	-
Moisture Sensitivity Level (MSL)	1 (Unlimited)	-

Substitute Part Grouping Explanation

Substitute parts for the HS1DL R3G are classified into two categories based on electrical parameter alignment:

Parametric Equivalents maintain identical or superior electrical specifications across all critical parameters: 200 V reverse voltage rating, 1 A average rectified current, fast recovery speed classification (≤ 500ns), and DO-219AB package compatibility. These parts are direct functional replacements.

Similar Parts share the same 200 V reverse voltage and DO-219AB package but differ in one or more of the following parameters: average rectified current rating, reverse recovery time, forward voltage drop, or reverse leakage current. Selection of similar parts requires circuit-level analysis to confirm compatibility with application requirements.

Critical substitution parameters:

Voltage - DC Reverse (Vr) (Max): Must equal or exceed 200 V
Package / Case: Must be DO-219AB (Sub SMA / SMF)
Mounting Type: Must be Surface Mount
Speed Classification: Fast Recovery preferred for switching applications
Operating Temperature Range: Must encompass application requirements

Parameter Comparison

Part Number	Manufacturer	Vr (Max) [V]	Io [A]	Vf (Max) @ If [mV]	trr [ns]	Ir @ Vr [µA]	Package	Speed	Temp Range [°C]
HS1DL R3G	Taiwan Semiconductor Corporation	200	1	950 @ 1 A	50	5 @ 200 V	DO-219AB	Fast Recovery ≤ 500ns	-55 to 150
ES1DL	Taiwan Semiconductor Corporation	200	1	950 @ 1 A	35	5 @ 200 V	DO-219AB	Fast Recovery ≤ 500ns	-55 to 150
HS1DL RVG	Taiwan Semiconductor Corporation	200	1	950 @ 1 A	50	5 @ 200 V	DO-219AB	Fast Recovery ≤ 500ns	-55 to 150
RS07D-GS08	Vishay General Semiconductor - Diodes Division	200	0.5	1150 @ 700 mA	150	10 @ 200 V	DO-219AB	Fast Recovery ≤ 500ns	-55 to 150
S1FLD-GS08	Vishay General Semiconductor - Diodes Division	200	0.7	1100 @ 1 A	1800	10 @ 200 V	DO-219AB	Standard Recovery >500ns	-55 to 150
VS-1EFH02-M3/I	Vishay General Semiconductor - Diodes Division	200	1	930 @ 1 A	16	2 @ 200 V	DO-219AB	Fast Recovery ≤ 500ns	-65 to 175
VS-2EFH02HM3/I	Vishay General Semiconductor - Diodes Division	200	2	950 @ 2 A	25	2 @ 200 V	DO-219AB	Fast Recovery ≤ 500ns	-65 to 175

Engineering Selection Recommendations

Parametric Equivalent Selection:

ES1DL is a parametric equivalent offering superior reverse recovery time (35 ns versus 50 ns) while maintaining identical voltage, current, and forward voltage specifications. This part is suitable for direct substitution in all applications where the HS1DL R3G is specified. ES1DL carries Active product status, ROHS3 compliance, and unlimited moisture sensitivity rating.

HS1DL RVG is an exact electrical equivalent with identical specifications to the HS1DL R3G, differing only in packaging format (Cut Tape versus Sub SMA). This part is suitable for direct substitution where packaging format compatibility is confirmed. HS1DL RVG maintains Active product status and full regulatory compliance.

Similar Part Selection:

VS-1EFH02-M3/I matches the 1 A current rating and 200 V voltage specification with superior reverse recovery time (16 ns) and lower reverse leakage current (2 µA). This part operates across an extended temperature range (-65°C to 175°C) and is suitable for applications requiring enhanced switching performance. Selection requires confirmation that the lower forward voltage (930 mV) and reduced leakage current are compatible with circuit design.

VS-2EFH02HM3/I provides a 2 A current rating with 200 V voltage specification and fast recovery characteristics. This part is suitable for applications requiring higher current capacity. Selection requires circuit-level confirmation that the 2 A rating does not introduce design complications.

RS07D-GS08 and S1FLD-GS08 are not recommended as primary substitutes due to reduced current ratings (500 mA and 700 mA respectively) relative to the 1 A specification of the HS1DL R3G. S1FLD-GS08 additionally exhibits standard recovery speed (1.8 µs) rather than fast recovery, making it unsuitable for switching applications requiring fast recovery characteristics.

All substitute parts maintain DO-219AB package compatibility, surface mount mounting type, RoHS3 compliance, and unlimited moisture sensitivity rating.

Frequently Asked Questions (FAQ)

Q: Can ES1DL be used as a direct replacement for HS1DL R3G?

A: Yes. ES1DL is a parametric equivalent with identical voltage (200 V), current (1 A), forward voltage (950 mV @ 1 A), and package specifications (DO-219AB). The reverse recovery time is superior (35 ns versus 50 ns), making it suitable for direct substitution in all applications.

Q: What is the difference between HS1DL R3G and HS1DL RVG?

A: Both parts are electrically identical with 200 V reverse voltage, 1 A current rating, 950 mV forward voltage, and 50 ns reverse recovery time. The difference is packaging format: HS1DL R3G is supplied in Sub SMA format, while HS1DL RVG is supplied in Cut Tape format. Both use the DO-219AB package.

Q: Can VS-1EFH02-M3/I replace HS1DL R3G?

A: VS-1EFH02-M3/I shares the same 200 V voltage rating, 1 A current rating, and DO-219AB package. It offers superior reverse recovery time (16 ns versus 50 ns) and lower reverse leakage current (2 µA versus 5 µA). The forward voltage is slightly lower (930 mV versus 950 mV). Substitution is suitable when the improved switching characteristics and extended temperature range (-65°C to 175°C) are compatible with application requirements.

Q: Why is RS07D-GS08 listed as a similar part rather than an equivalent?

A: RS07D-GS08 has a reduced current rating of 500 mA compared to the 1 A specification of HS1DL R3G. While it maintains the 200 V voltage rating and DO-219AB package, the lower current capacity makes it unsuitable for applications requiring 1 A operation. Additionally, reverse recovery time is longer (150 ns versus 50 ns).

Q: Is S1FLD-GS08 suitable for high-speed switching applications?

A: No. S1FLD-GS08 is classified as a standard recovery diode with reverse recovery time of 1.8 µs, significantly longer than the fast recovery specification (≤ 500 ns) of HS1DL R3G. Additionally, the current rating is limited to 700 mA. This part is not suitable for applications requiring fast recovery characteristics.

Q: What package compatibility must be maintained when selecting a substitute?

A: All substitute parts must use the DO-219AB package in surface mount configuration. This ensures mechanical and electrical compatibility with printed circuit board layouts designed for HS1DL R3G. Package format variations (Sub SMA, SMF, or supplier designations) are acceptable provided the underlying DO-219AB specification is maintained.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed maintain ROHS3 compliance and unlimited moisture sensitivity rating (MSL 1), matching the regulatory status of HS1DL R3G.

Q: Can VS-2EFH02HM3/I be used in place of HS1DL R3G?

A: VS-2EFH02HM3/I has a 2 A current rating, which exceeds the 1 A specification of HS1DL R3G. While the 200 V voltage rating and DO-219AB package are compatible, the higher current rating requires circuit-level analysis to confirm that the increased current capacity does not introduce design complications or unintended circuit behavior.

Q: What is the significance of reverse recovery time in diode selection?

A: Reverse recovery time (trr) determines the speed at which a diode transitions from conducting to blocking state. Fast recovery diodes (trr ≤ 500 ns) are required for high-frequency switching applications to minimize switching losses and electromagnetic interference. Standard recovery diodes (trr > 500 ns) are suitable for lower-frequency or linear applications. HS1DL R3G specifies fast recovery with 50 ns trr, making it suitable for switching power supplies and similar applications.

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