HS1DL MHG Equivalent & Substitute Parts

Part Overview

The HS1DL MHG is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 200 V DC reverse voltage and 1 A average rectified current in a Sub SMA surface mount package. This component is classified as Active product status and complies with ROHS3 and REACH standards. Equivalent and substitute parts are identified when design requirements necessitate alternative sourcing, inventory availability, or specific performance characteristics within the same functional category.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	200	V
Current - Average Rectified (Io)	1	A
Voltage - Forward (Vf) (Max) @ If	950 mV @ 1 A	mV
Reverse Recovery Time (trr)	50	ns
Current - Reverse Leakage @ Vr	5	µA @ 200 V
Speed Classification	Fast Recovery ≤ 500ns, > 200mA (Io)	—
Package / Case	DO-219AB	—
Mounting Type	Surface Mount	—
Operating Temperature - Junction	-55 to 150	°C
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the HS1DL MHG is determined by the following critical parameters:

Mandatory Matching Parameters:

Voltage - DC Reverse (Vr) (Max): 200 V
Package / Case: DO-219AB or Sub SMA equivalent
Mounting Type: Surface Mount
RoHS Status: ROHS3 Compliant

Current Rating Compatibility:

Primary equivalents maintain 1 A average rectified current
Similar parts with reduced current (500 mA) or increased current (2 A) are classified as similar rather than direct equivalents

Performance Characteristics:

Fast Recovery speed classification (≤ 500ns, > 200mA)
Forward voltage drop and reverse recovery time are secondary selection criteria
Reverse leakage current and junction capacitance are application-dependent considerations

Parts are grouped as Parametric Equivalent when all mandatory parameters match exactly. Parts are grouped as Similar when voltage and package match but current rating or other specifications differ.

Parameter Comparison

Parameter	HS1DL MHG	ES1DL	HS1DL RVG	RS07D-GS08	VS-1EFH02-M3/I	VS-2EFH02HM3/I
Manufacturer	Taiwan Semiconductor	Taiwan Semiconductor	Taiwan Semiconductor	Vishay	Vishay	Vishay
Voltage - DC Reverse (Vr) (Max)	200 V	200 V	200 V	200 V	200 V	200 V
Current - Average Rectified (Io)	1 A	1 A	1 A	500 mA	1 A	2 A
Voltage - Forward (Vf) (Max) @ If	950 mV @ 1 A	950 mV @ 1 A	950 mV @ 1 A	1.15 V @ 700 mA	930 mV @ 1 A	950 mV @ 2 A
Reverse Recovery Time (trr)	50 ns	35 ns	50 ns	150 ns	16 ns	25 ns
Current - Reverse Leakage @ Vr	5 µA @ 200 V	5 µA @ 200 V	5 µA @ 200 V	10 µA @ 200 V	2 µA @ 200 V	2 µA @ 200 V
Capacitance @ Vr, F	20 pF @ 4V, 1MHz	10 pF @ 4V, 1MHz	20 pF @ 4V, 1MHz	9 pF @ 4V, 1MHz	—	—
Package / Case	DO-219AB	DO-219AB	DO-219AB	DO-219AB	DO-219AB	DO-219AB
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Operating Temperature - Junction	-55 to 150 °C	-55 to 150 °C	-55 to 150 °C	-55 to 150 °C	-65 to 175 °C	-65 to 175 °C
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Product Status	Active	Active	Active	Active	Active	Active

Engineering Selection Recommendations

Parametric Equivalents (Direct Substitution):

ES1DL and HS1DL RVG are parametric equivalents to the HS1DL MHG. Both maintain identical voltage and current ratings, package configuration, and compliance certifications. ES1DL exhibits improved reverse recovery time (35 ns versus 50 ns) and reduced junction capacitance (10 pF versus 20 pF), resulting in lower switching losses. HS1DL RVG maintains identical electrical characteristics to the main part with alternative packaging (Cut Tape versus standard packaging). Both parts are Active status with ROHS3 compliance and unlimited moisture sensitivity level.

Similar Parts (Application-Dependent Selection):

RS07D-GS08 (Vishay) is rated for 500 mA average rectified current, representing a 50% reduction from the 1 A specification. This part is suitable only for applications with reduced current requirements. RS07D-GS08 includes AEC-Q101 automotive qualification and exhibits longer reverse recovery time (150 ns).

VS-1EFH02-M3/I (Vishay FRED Pt® series) maintains 1 A current rating with superior performance characteristics: 16 ns reverse recovery time, 2 µA reverse leakage current, and extended operating temperature range (-65 to 175 °C). This part is suitable for applications requiring enhanced thermal performance and reduced switching losses.

VS-2EFH02HM3/I (Vishay FRED Pt® series) is rated for 2 A average rectified current, representing a 100% increase from the 1 A specification. This part includes AEC-Q101 automotive qualification and exhibits 25 ns reverse recovery time. Selection is appropriate only for applications requiring higher current capacity.

All substitute parts maintain ROHS3 compliance, REACH unaffected status, and Active product status.

Frequently Asked Questions (FAQ)

Q: Can ES1DL be used as a direct replacement for HS1DL MHG?

A: Yes. ES1DL is a parametric equivalent with identical voltage (200 V), current (1 A), and package (DO-219AB) specifications. Both parts are ROHS3 compliant and Active status. ES1DL exhibits improved reverse recovery time (35 ns versus 50 ns) and lower junction capacitance (10 pF versus 20 pF), which reduces switching losses in rectification circuits.

Q: What is the difference between HS1DL RVG and HS1DL MHG?

A: HS1DL RVG and HS1DL MHG are parametric equivalents with identical electrical specifications. The primary difference is packaging format: HS1DL RVG is supplied in Cut Tape (CT) configuration, while HS1DL MHG uses standard Sub SMA packaging. Both maintain the same voltage, current, and performance characteristics.

Q: Can RS07D-GS08 replace HS1DL MHG in all applications?

A: No. RS07D-GS08 is rated for 500 mA average rectified current, which is 50% lower than the HS1DL MHG specification of 1 A. This part is suitable only for applications with reduced current requirements. RS07D-GS08 also exhibits longer reverse recovery time (150 ns versus 50 ns).

Q: What are the advantages of VS-1EFH02-M3/I over HS1DL MHG?

A: VS-1EFH02-M3/I maintains the same 1 A current and 200 V voltage ratings but offers superior performance: reverse recovery time of 16 ns (versus 50 ns), reverse leakage current of 2 µA (versus 5 µA), and extended operating temperature range of -65 to 175 °C (versus -55 to 150 °C). These characteristics reduce switching losses and enable operation in higher-temperature environments.

Q: Is VS-2EFH02HM3/I compatible with HS1DL MHG applications?

A: VS-2EFH02HM3/I is rated for 2 A average rectified current, which exceeds the HS1DL MHG specification of 1 A. This part is suitable only for applications requiring higher current capacity. The 200 V voltage rating and DO-219AB package are compatible. VS-2EFH02HM3/I includes AEC-Q101 automotive qualification.

Q: Do all substitute parts have the same package footprint?

A: Yes. All listed substitute parts use the DO-219AB package configuration with Surface Mount mounting type. Physical footprint compatibility is maintained across all parts listed in this reference.

Q: Are there temperature range differences between substitute parts?

A: Yes. HS1DL MHG, ES1DL, and HS1DL RVG operate from -55 to 150 °C junction temperature. VS-1EFH02-M3/I and VS-2EFH02HM3/I extend the range to -65 to 175 °C, enabling operation in higher-temperature applications.

Q: What is the significance of reverse recovery time differences?

A: Reverse recovery time (trr) determines switching speed and affects power dissipation in rectification circuits. Lower trr values reduce switching losses. ES1DL (35 ns), VS-1EFH02-M3/I (16 ns), and VS-2EFH02HM3/I (25 ns) exhibit faster recovery than HS1DL MHG (50 ns), resulting in improved efficiency in high-frequency applications.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All parts listed—HS1DL MHG, ES1DL, HS1DL RVG, RS07D-GS08, VS-1EFH02-M3/I, and VS-2EFH02HM3/I—are ROHS3 compliant and REACH unaffected.

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