HS1DL M2G Equivalent & Substitute Parts

Part Overview

The HS1DL M2G is a general-purpose surface mount rectifier diode manufactured by Taiwan Semiconductor Corporation. This component operates at 200 V DC reverse voltage with 1 A average rectified current and features fast recovery characteristics with a 50 ns reverse recovery time. The device is housed in a DO-219AB (Sub SMA) package and is classified as Active product status with ROHS3 compliance. Equivalent and substitute parts are identified to support procurement flexibility, inventory management, and design optimization while maintaining electrical and mechanical compatibility within specified parameter ranges.

Substiute Parts

HS1DL M2G
Taiwan Semiconductor CorporationIn Stock: 1099HS1DL M2G Datasheet
HS1DL M2G
Current Part
ES1DL
Taiwan Semiconductor CorporationIn Stock: 9612ES1DL Datasheet
ES1DL
Parametric Equivalent
HS1DL RVG
Taiwan Semiconductor CorporationIn Stock: 2896HS1DL RVG Datasheet
HS1DL RVG
Parametric Equivalent
RS07D-GS08
Vishay General Semiconductor - Diodes DivisionIn Stock: 20254RS07D-GS08 Datasheet
RS07D-GS08
Similar
VS-1EFH02-M3/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 50123VS-1EFH02-M3/I Datasheet
VS-1EFH02-M3/I
Similar
VS-2EFH02HM3/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 20115VS-2EFH02HM3/I Datasheet
VS-2EFH02HM3/I
Similar

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 200 V
Current - Average Rectified (Io) 1 A
Voltage - Forward (Vf) (Max) @ If 950 mV @ 1 A mV
Reverse Recovery Time (trr) 50 ns
Current - Reverse Leakage @ Vr 5 µA @ 200 V
Speed Classification Fast Recovery ≤ 500ns, > 200mA (Io)
Package / Case DO-219AB
Mounting Type Surface Mount
Operating Temperature - Junction -55 to 150 °C
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitute parts for the HS1DL M2G are classified into two categories based on electrical parameter alignment:

Parametric Equivalents maintain identical or superior electrical specifications across all critical parameters: reverse voltage (200 V), average rectified current (1 A), forward voltage (950 mV @ 1 A), fast recovery speed classification, reverse leakage current (5 µA @ 200 V), and package type (DO-219AB). These parts are direct functional replacements with no circuit redesign required.

Similar Parts share the same reverse voltage (200 V) and package (DO-219AB) but differ in one or more of the following parameters: average rectified current rating, forward voltage characteristics, reverse recovery time, reverse leakage current, or operating temperature range. Selection of similar parts requires circuit-level evaluation to confirm compatibility with application requirements.

The substitution logic is based strictly on the following key parameters:

  • Voltage - DC Reverse (Vr) (Max): 200 V (mandatory match)
  • Current - Average Rectified (Io): 1 A (for parametric equivalents)
  • Package / Case: DO-219AB (mandatory match)
  • Mounting Type: Surface Mount (mandatory match)
  • Speed Classification: Fast Recovery (mandatory match)
  • RoHS Status: ROHS3 Compliant (mandatory match)

Parameter Comparison

Parameter HS1DL M2G ES1DL HS1DL RVG RS07D-GS08 VS-1EFH02-M3/I VS-2EFH02HM3/I
Manufacturer Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor Vishay General Semiconductor Vishay General Semiconductor Vishay General Semiconductor
Voltage - DC Reverse (Vr) (Max) 200 V 200 V 200 V 200 V 200 V 200 V
Current - Average Rectified (Io) 1 A 1 A 1 A 500 mA 1 A 2 A
Voltage - Forward (Vf) (Max) @ If 950 mV @ 1 A 950 mV @ 1 A 950 mV @ 1 A 1.15 V @ 700 mA 930 mV @ 1 A 950 mV @ 2 A
Reverse Recovery Time (trr) 50 ns 35 ns 50 ns 150 ns 16 ns 25 ns
Current - Reverse Leakage @ Vr 5 µA @ 200 V 5 µA @ 200 V 5 µA @ 200 V 10 µA @ 200 V 2 µA @ 200 V 2 µA @ 200 V
Capacitance @ Vr, F 20 pF @ 4V, 1MHz 10 pF @ 4V, 1MHz 20 pF @ 4V, 1MHz 9 pF @ 4V, 1MHz
Speed Classification Fast Recovery ≤ 500ns, > 200mA Fast Recovery ≤ 500ns, > 200mA Fast Recovery ≤ 500ns, > 200mA Fast Recovery ≤ 500ns, > 200mA Fast Recovery ≤ 500ns, > 200mA Fast Recovery ≤ 500ns, > 200mA
Package / Case DO-219AB DO-219AB DO-219AB DO-219AB DO-219AB DO-219AB
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Operating Temperature - Junction -55 to 150 °C -55 to 150 °C -55 to 150 °C -55 to 150 °C -65 to 175 °C -65 to 175 °C
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Product Status Active Active Active Active Active Active

Engineering Selection Recommendations

Parametric Equivalent Selection:

ES1DL and HS1DL RVG are parametric equivalents of the HS1DL M2G. Both parts maintain the mandatory electrical specifications: 200 V reverse voltage, 1 A average rectified current, 950 mV forward voltage at 1 A, fast recovery speed classification, and DO-219AB package. Both are Active product status with ROHS3 compliance. ES1DL offers improved reverse recovery time (35 ns versus 50 ns) and reduced capacitance (10 pF versus 20 pF), providing performance advantages in high-frequency switching applications. HS1DL RVG maintains identical electrical characteristics to the HS1DL M2G with identical reverse recovery time and capacitance specifications.

Similar Part Selection:

RS07D-GS08 (Vishay) shares the 200 V reverse voltage and DO-219AB package but operates at 500 mA average rectified current, representing a 50% current derating. This part is suitable only for applications where the circuit current requirement does not exceed 500 mA. RS07D-GS08 carries AEC-Q101 automotive qualification.

VS-1EFH02-M3/I (Vishay FRED Pt® series) maintains 200 V reverse voltage and 1 A average rectified current with superior reverse recovery time (16 ns) and lower reverse leakage current (2 µA). Operating temperature range extends to -65 to 175 °C. This part is suitable for applications requiring enhanced thermal performance and faster switching characteristics.

VS-2EFH02HM3/I (Vishay FRED Pt® series) operates at 2 A average rectified current, representing a 100% current upgrade from the HS1DL M2G. This part is suitable only for applications where the circuit can accommodate higher current capability. VS-2EFH02HM3/I carries AEC-Q101 automotive qualification and operates across -65 to 175 °C.

All substitute parts maintain ROHS3 compliance and Active product status, supporting long-term design continuity.

Frequently Asked Questions (FAQ)

Q: Can ES1DL be used as a direct replacement for HS1DL M2G?

A: Yes. ES1DL is a parametric equivalent with identical reverse voltage (200 V), average rectified current (1 A), forward voltage (950 mV @ 1 A), speed classification (fast recovery), and package (DO-219AB). ES1DL offers improved reverse recovery time (35 ns versus 50 ns) and lower capacitance (10 pF versus 20 pF), making it functionally superior for direct substitution without circuit modification.

Q: What is the difference between parametric equivalents and similar parts?

A: Parametric equivalents maintain all critical electrical specifications identical to the HS1DL M2G across reverse voltage, current rating, forward voltage, speed classification, and package type. Similar parts share the same reverse voltage and package but differ in current rating, reverse recovery time, or other electrical characteristics. Similar parts require circuit-level evaluation before substitution.

Q: Can RS07D-GS08 replace HS1DL M2G in all applications?

A: No. RS07D-GS08 operates at 500 mA average rectified current, which is 50% lower than the HS1DL M2G (1 A). This part is suitable only for applications where circuit current does not exceed 500 mA. Using RS07D-GS08 in a 1 A application will result in device overstress and failure.

Q: What are the advantages of VS-1EFH02-M3/I over HS1DL M2G?

A: VS-1EFH02-M3/I maintains identical reverse voltage (200 V) and current rating (1 A) but offers superior reverse recovery time (16 ns versus 50 ns), lower reverse leakage current (2 µA versus 5 µA), and extended operating temperature range (-65 to 175 °C versus -55 to 150 °C). These characteristics provide faster switching performance and improved thermal margin in high-frequency applications.

Q: Can VS-2EFH02HM3/I be used in place of HS1DL M2G?

A: VS-2EFH02HM3/I can be used in applications where the circuit design accommodates 2 A average rectified current. The higher current rating does not create a compatibility issue; however, the circuit must be designed to handle this capability. VS-2EFH02HM3/I maintains 200 V reverse voltage, fast recovery speed classification, and DO-219AB package, with superior reverse recovery time (25 ns) and lower reverse leakage current (2 µA).

Q: Are all substitute parts RoHS compliant?

A: Yes. All substitute parts listed (ES1DL, HS1DL RVG, RS07D-GS08, VS-1EFH02-M3/I, VS-2EFH02HM3/I) are ROHS3 compliant, matching the HS1DL M2G compliance status.

Q: What packaging options are available for substitute parts?

A: HS1DL M2G is supplied in standard packaging. ES1DL is available in Cut Tape (CT) and Digi-Reel® packaging. HS1DL RVG is available in Cut Tape (CT) packaging. RS07D-GS08, VS-1EFH02-M3/I, and VS-2EFH02HM3/I are supplied in Tape & Reel (TR) packaging. Packaging selection depends on procurement volume and assembly process requirements.

Q: Do any substitute parts carry automotive qualification?

A: Yes. RS07D-GS08 and VS-2EFH02HM3/I carry AEC-Q101 automotive qualification. These parts are suitable for automotive and high-reliability applications requiring formal qualification documentation.

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