HS1A R3G Equivalent & Substitute Parts

Part Overview

The HS1A R3G is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 50 V DC reverse voltage and 1 A average rectified current in a surface mount DO-214AC (SMA) package. This part is discontinued at DiGi Electronics, necessitating identification of equivalent and substitute components for ongoing design support and procurement.

The HS1A R3G operates across a junction temperature range of -55°C to 150°C and features fast recovery characteristics with a reverse recovery time of 50 ns. It is ROHS3 compliant and carries MSL 1 (Unlimited) moisture sensitivity rating.

Substiute Parts

HS1A R3G
Taiwan Semiconductor CorporationIn Stock: 1116HS1A R3G Datasheet
HS1A R3G
Current Part
HS1A
Taiwan Semiconductor CorporationIn Stock: 687HS1A Datasheet
HS1A
Parametric Equivalent
US1A
Taiwan Semiconductor CorporationIn Stock: 17217US1A Datasheet
US1A
Parametric Equivalent
US1AH
Taiwan Semiconductor CorporationIn Stock: 848US1AH Datasheet
US1AH
Parametric Equivalent
US1A-13-F
Diodes IncorporatedIn Stock: 25367US1A-13-F Datasheet
US1A-13-F
Direct
CGRA4001-G
Comchip TechnologyIn Stock: 10292CGRA4001-G Datasheet
CGRA4001-G
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ES1A-13-F
Diodes IncorporatedIn Stock: 70327ES1A-13-F Datasheet
ES1A-13-F
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ES1A-E3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 20190ES1A-E3/5AT Datasheet
ES1A-E3/5AT
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ES1A-M3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 1061ES1A-M3/5AT Datasheet
ES1A-M3/5AT
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ES1A-M3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 12684ES1A-M3/61T Datasheet
ES1A-M3/61T
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ES1AHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 4243ES1AHE3_A/H Datasheet
ES1AHE3_A/H
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ES1AHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 996ES1AHE3_A/I Datasheet
ES1AHE3_A/I
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GS2A-LTP
Micro Commercial CoIn Stock: 1213GS2A-LTP Datasheet
GS2A-LTP
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RS1A-13-F
Diodes IncorporatedIn Stock: 10435RS1A-13-F Datasheet
RS1A-13-F
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RS1AB-13-F
Diodes IncorporatedIn Stock: 15312RS1AB-13-F Datasheet
RS1AB-13-F
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S1A-13-F
Diodes IncorporatedIn Stock: 100403S1A-13-F Datasheet
S1A-13-F
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S1AB-13-F
Diodes IncorporatedIn Stock: 39805S1AB-13-F Datasheet
S1AB-13-F
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S1AHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 70236S1AHE3_A/H Datasheet
S1AHE3_A/H
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S1AHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 921S1AHE3_A/I Datasheet
S1AHE3_A/I
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US1A-TP
Micro Commercial CoIn Stock: 4028US1A-TP Datasheet
US1A-TP
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ES1A-HF
Comchip TechnologyIn Stock: 783ES1A-HF Datasheet
ES1A-HF
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US1A-E3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 5736US1A-E3/5AT Datasheet
US1A-E3/5AT
Parametric Equivalent
US1A-E3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 4006US1A-E3/61T Datasheet
US1A-E3/61T
Parametric Equivalent
US1A-M3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 1178US1A-M3/5AT Datasheet
US1A-M3/5AT
Parametric Equivalent
US1A-M3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 13748US1A-M3/61T Datasheet
US1A-M3/61T
Parametric Equivalent
US1A_R1_00001
Panjit International Inc.In Stock: 2863US1A_R1_00001 Datasheet
US1A_R1_00001
Parametric Equivalent
US1AHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 1188US1AHE3_A/H Datasheet
US1AHE3_A/H
Parametric Equivalent
US1AHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 1141US1AHE3_A/I Datasheet
US1AHE3_A/I
Parametric Equivalent

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 50 V
Current - Average Rectified (Io) 1 A
Voltage - Forward (Vf) (Max) @ If 1 V @ 1 A V @ A
Speed Fast Recovery ≤ 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns
Current - Reverse Leakage @ Vr 5 µA @ 50 V µA @ V
Capacitance @ Vr, F 20 pF @ 4V, 1MHz
Package / Case DO-214AC, SMA
Operating Temperature - Junction -55 to 150 °C
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the HS1A R3G is determined by strict equivalence across the following critical parameters:

Primary Substitution Criteria:

  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 1 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A or lower
  • Speed: Fast Recovery ≤ 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns or lower
  • Current - Reverse Leakage @ Vr: 5 µA @ 50 V or lower
  • Package / Case: DO-214AC, SMA
  • Operating Temperature - Junction: -55°C minimum, 150°C minimum
  • RoHS Status: ROHS3 Compliant
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)

Parts are grouped into three categories:

Parametric Equivalents: Parts from Taiwan Semiconductor Corporation (HS1A, US1A, US1AH) that match all electrical specifications and operating parameters.

Direct Manufacturer Equivalents: Parts from alternative manufacturers (Diodes Incorporated US1A-13-F) that meet all primary substitution criteria with identical electrical performance.

Similar Parts: Components from Comchip Technology and Vishay General Semiconductor that satisfy voltage, current, and package requirements but exhibit variations in forward voltage, reverse recovery time, or capacitance characteristics.

Parameter Comparison

Manufacturer Part Number Manufacturer Vr (Max) [V] Io [A] Vf (Max) @ If [V @ A] Speed trr [ns] Ir @ Vr [µA @ V] C @ Vr [pF] Tj Range [°C] Product Status
HS1A R3G Taiwan Semiconductor Corporation 50 1 1 @ 1 Fast Recovery ≤ 500ns 50 5 @ 50 20 -55 to 150 Discontinued
HS1A Taiwan Semiconductor Corporation 50 1 1 @ 1 Fast Recovery ≤ 500ns 50 5 @ 50 20 -55 to 150 Active
US1A Taiwan Semiconductor Corporation 50 1 1 @ 1 Fast Recovery ≤ 500ns 50 5 @ 50 15 -55 to 150 Active
US1AH Taiwan Semiconductor Corporation 50 1 1 @ 1 Fast Recovery ≤ 500ns 50 5 @ 50 15 -55 to 150 Active (AEC-Q101)
US1A-13-F Diodes Incorporated 50 1 1 @ 1 Fast Recovery ≤ 500ns 50 5 @ 50 20 -65 to 150 Active
CGRA4001-G Comchip Technology 50 1 1.1 @ 1 Standard Recovery >500ns 5 @ 50 -55 to 150 Active
ES1A-13-F Diodes Incorporated 50 1 0.92 @ 1 Fast Recovery ≤ 500ns 25 5 @ 50 10 -55 to 150 Active
ES1A-E3/5AT Vishay General Semiconductor - Diodes Division 50 1 0.92 @ 1 Fast Recovery ≤ 500ns 25 5 @ 50 10 -55 to 155 Active
ES1A-M3/5AT Vishay General Semiconductor - Diodes Division 50 1 0.92 @ 1 Fast Recovery ≤ 500ns 25 5 @ 50 10 -55 to 150 Active
ES1A-M3/61T Vishay General Semiconductor - Diodes Division 50 1 0.92 @ 1 Fast Recovery ≤ 500ns 25 5 @ 50 10 -55 to 150 Active
ES1AHE3_A/H Vishay General Semiconductor - Diodes Division 50 1 0.92 @ 1 Fast Recovery ≤ 500ns 25 5 @ 50 10 -55 to 150 Active (AEC-Q101)

Engineering Selection Recommendations

Parametric Equivalents (Recommended Primary Substitutes):

The HS1A and US1A from Taiwan Semiconductor Corporation are parametric equivalents with active product status. HS1A maintains identical electrical specifications including 20 pF capacitance and 50 ns reverse recovery time. US1A exhibits reduced capacitance (15 pF) while maintaining all other critical parameters. Both are ROHS3 compliant with MSL 1 rating.

US1AH is the automotive-qualified variant (AEC-Q101) of the US1A series, suitable for applications requiring automotive-grade reliability. It maintains identical electrical performance to US1A with automotive qualification.

Direct Manufacturer Equivalent:

US1A-13-F from Diodes Incorporated provides direct functional equivalence with extended operating temperature range (-65°C to 150°C). This part matches the HS1A R3G across all critical electrical parameters including forward voltage, reverse recovery time, and capacitance. It is available in Cut Tape and Digi-Reel packaging with high inventory availability.

Similar Parts (Conditional Substitutes):

ES1A-13-F, ES1A-E3/5AT, ES1A-M3/5AT, ES1A-M3/61T, and ES1AHE3_A/H from Vishay General Semiconductor and Diodes Incorporated meet voltage, current, and package requirements. These parts feature improved forward voltage characteristics (0.92 V vs. 1 V) and faster reverse recovery time (25 ns vs. 50 ns), resulting in lower capacitance (10 pF). ES1AHE3_A/H includes AEC-Q101 automotive qualification.

CGRA4001-G from Comchip Technology satisfies voltage, current, and package specifications but operates with standard recovery characteristics (>500 ns) and elevated forward voltage (1.1 V). This part is suitable only where fast recovery performance is not required.

All substitute parts maintain ROHS3 compliance and MSL 1 moisture sensitivity rating.

Frequently Asked Questions (FAQ)

Q: Can US1A be used as a direct replacement for HS1A R3G?

A: Yes. US1A is a parametric equivalent from the same manufacturer with identical voltage (50 V), current (1 A), forward voltage (1 V @ 1 A), speed (Fast Recovery ≤ 500ns), reverse recovery time (50 ns), and reverse leakage (5 µA @ 50 V) specifications. The primary difference is reduced capacitance (15 pF vs. 20 pF), which is not a limiting factor for general-purpose rectification applications. US1A is active product status.

Q: What is the difference between US1A and US1AH?

A: US1AH is the automotive-qualified variant of US1A, carrying AEC-Q101 qualification. Both parts share identical electrical specifications. US1AH is selected for applications requiring automotive-grade reliability and traceability.

Q: Why do ES1A variants show lower forward voltage and faster recovery time?

A: ES1A variants from Vishay and Diodes Incorporated represent an alternative design with improved performance characteristics. The 0.92 V forward voltage (vs. 1 V) and 25 ns reverse recovery time (vs. 50 ns) result in lower power dissipation and faster switching. These parts are functionally compatible but exhibit superior performance in high-frequency switching applications.

Q: Is CGRA4001-G a suitable substitute?

A: CGRA4001-G meets the 50 V, 1 A, and DO-214AC package requirements. However, it operates with standard recovery characteristics (>500 ns) and elevated forward voltage (1.1 V). This part is suitable only for applications where fast recovery performance is not specified or required.

Q: What is the significance of the DO-214AC (SMA) package designation?

A: DO-214AC and SMA are equivalent package designations for the same surface mount form factor. All substitute parts listed use this identical package, ensuring mechanical and electrical compatibility without PCB redesign.

Q: Can I use US1A-13-F from Diodes Incorporated instead of Taiwan Semiconductor parts?

A: Yes. US1A-13-F from Diodes Incorporated is a direct manufacturer equivalent with identical electrical specifications to HS1A R3G. It provides extended operating temperature range (-65°C to 150°C) and is available in high volume with active product status.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All substitute parts listed carry ROHS3 compliance and MSL 1 (Unlimited) moisture sensitivity rating, matching the environmental and regulatory status of the HS1A R3G.

Q: What packaging options are available for substitute parts?

A: Substitute parts are available in multiple packaging formats: Tape & Reel (TR), Cut Tape (CT) & Digi-Reel, and standard reel configurations. Selection depends on procurement volume and assembly process requirements. All parts maintain identical electrical and mechanical specifications across packaging variants.

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