HN2C01FU-GR(T5L,F) Equivalent & Substitute Parts

Part Overview

The HN2C01FU-GR(T5L,F) is a dual NPN bipolar junction transistor array manufactured by Toshiba Semiconductor and Storage. This surface mount component operates at maximum collector currents of 150mA with a 50V collector-emitter breakdown voltage rating. The device is classified as Active product status and is RoHS Compliant, making it suitable for modern electronic applications requiring dual transistor functionality in compact form factors.

Substitute parts are identified when equivalent electrical specifications and mechanical compatibility are maintained across the same package type and performance envelope. The HN1C01FU-GR,LF represents a direct functional equivalent with identical electrical ratings and packaging specifications.

Key Parameters

Parameter	Value	Unit
Transistor Type	2 NPN (Dual)	—
Current - Collector (Ic) (Max)	150	mA
Voltage - Collector Emitter Breakdown (Max)	50	V
Vce Saturation (Max) @ Ib, Ic	250mV @ 10mA, 100mA	mV
Current - Collector Cutoff (Max)	100	nA
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 2mA, 6V	—
Power - Max	200	mW
Frequency - Transition	80	MHz
Operating Temperature (TJ)	125	°C
Package / Case	6-TSSOP, SC-88, SOT-363	—
Mounting Type	Surface Mount	—
Supplier Device Package	US6	—

Substitute Part Grouping Explanation

Substitution eligibility for the HN2C01FU-GR(T5L,F) is determined by strict equivalence across the following critical parameters:

Electrical Specifications:

Maximum collector current: 150mA
Collector-emitter breakdown voltage: 50V
Saturation voltage: 250mV @ 10mA, 100mA
Collector cutoff current: 100nA (ICBO)
DC current gain (hFE): 200 minimum @ 2mA, 6V
Maximum power dissipation: 200mW
Transition frequency: 80MHz
Operating temperature range: 125°C (TJ)

Mechanical Specifications:

Transistor configuration: 2 NPN (Dual)
Package type: 6-TSSOP, SC-88, SOT-363
Supplier device package: US6
Mounting technology: Surface Mount

The HN1C01FU-GR,LF meets all electrical and mechanical requirements for direct substitution with the HN2C01FU-GR(T5L,F). Both components share identical performance characteristics and package specifications, enabling pin-compatible replacement in circuit designs.

Parameter Comparison

Parameter	HN2C01FU-GR(T5L,F)	HN1C01FU-GR,LF	Match
Transistor Type	2 NPN (Dual)	2 NPN (Dual)	✓
Current - Collector (Ic) (Max)	150mA	150mA	✓
Voltage - Collector Emitter Breakdown (Max)	50V	50V	✓
Vce Saturation (Max) @ Ib, Ic	250mV @ 10mA, 100mA	250mV @ 10mA, 100mA	✓
Current - Collector Cutoff (Max)	100nA (ICBO)	100nA (ICBO)	✓
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 2mA, 6V	200 @ 2mA, 6V	✓
Power - Max	200mW	200mW	✓
Frequency - Transition	80MHz	80MHz	✓
Operating Temperature (TJ)	125°C	125°C	✓
Package / Case	6-TSSOP, SC-88, SOT-363	6-TSSOP, SC-88, SOT-363	✓
Mounting Type	Surface Mount	Surface Mount	✓
Supplier Device Package	US6	US6	✓
Product Status	Active	Active	✓
RoHS Status	RoHS Compliant	ROHS3 Compliant	✓
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	✓
ECCN	EAR99	EAR99	✓
HTSUS	8541.21.0095	8541.21.0095	✓

Engineering Selection Recommendations

The HN1C01FU-GR,LF is a direct substitute for the HN2C01FU-GR(T5L,F) based on complete electrical and mechanical equivalence. Both components maintain Active product status and comply with RoHS requirements, with the substitute offering ROHS3 compliance, which represents an enhanced regulatory standard.

Selection between these parts should be based on availability and supply chain considerations. The HN1C01FU-GR,LF currently maintains higher inventory levels (4098 pieces) compared to the HN2C01FU-GR(T5L,F) (758 pieces), which may influence procurement decisions for high-volume applications.

Both components are manufactured by Toshiba Semiconductor and Storage and share identical electrical performance characteristics, package specifications, and environmental compliance certifications. No circuit redesign or board layout modification is required when substituting between these parts.

Frequently Asked Questions (FAQ)

Q: Can the HN1C01FU-GR,LF replace the HN2C01FU-GR(T5L,F) in existing circuit designs?

A: Yes. The HN1C01FU-GR,LF is a direct functional equivalent with identical electrical specifications, maximum ratings, and package configuration. Pin-compatible replacement is supported without circuit modification.

Q: Are there differences in RoHS compliance between these parts?

A: The HN2C01FU-GR(T5L,F) is RoHS Compliant, while the HN1C01FU-GR,LF is ROHS3 Compliant. ROHS3 represents an updated compliance standard. Both parts meet RoHS requirements and are suitable for applications requiring lead-free manufacturing.

Q: What is the significance of the US6 package designation?

A: US6 is the supplier device package designation for both components. This corresponds to the 6-TSSOP, SC-88, and SOT-363 package types. All three designations refer to the same physical package with identical pin configuration and footprint.

Q: Do these transistors require different handling procedures?

A: No. Both components share identical Moisture Sensitivity Level (MSL) ratings of 1 (Unlimited), indicating no moisture sensitivity restrictions. Standard surface mount component handling procedures apply to both parts.

Q: What are the key electrical parameters that define substitution eligibility?

A: Substitution is based on matching collector current (150mA), collector-emitter breakdown voltage (50V), saturation voltage (250mV @ 10mA, 100mA), DC current gain (200 @ 2mA, 6V), power dissipation (200mW), and transition frequency (80MHz). All parameters are identical between the main part and substitute.

Q: Are there any export or regulatory restrictions on these components?

A: Both components are classified under ECCN EAR99 and HTSUS 8541.21.0095, indicating standard export classification with no additional restrictions beyond normal commercial export procedures.

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