HN2C01FEYTE85LF Equivalent & Substitute Parts

Part Overview

The HN2C01FEYTE85LF is a dual NPN bipolar junction transistor (BJT) array manufactured by Toshiba Semiconductor and Storage. This surface mount component operates at 50V collector-emitter breakdown voltage with a maximum collector current of 150mA and is housed in an ES6 package (SOT-563, SOT-666). The device is classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing design requirements and production continuity.

Substiute Parts

HN2C01FEYTE85LF

Toshiba Semiconductor and StorageIn Stock: 3531HN2C01FEYTE85LF Datasheet

Current PartRFQ

HN1C01FE-Y,LF

Toshiba Semiconductor and StorageIn Stock: 759HN1C01FE-Y,LF Datasheet

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EMX1T2R

Rohm SemiconductorIn Stock: 101224EMX1T2R Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the HN2C01FEYTE85LF is determined by strict equivalence across the following critical parameters:

Mandatory Equivalence Criteria:

• Transistor configuration: 2 NPN (Dual) array
• Maximum collector current: 150mA
• Collector-emitter breakdown voltage: 50V
• Collector cutoff current: 100nA
• Minimum DC current gain: 120
• Surface mount package compatibility: SOT-563, SOT-666
• Moisture sensitivity level: 1 (Unlimited)

Allowable Variation Parameters:

• Frequency - Transition: May exceed 60MHz
• Power dissipation: May exceed 100mW
• Vce saturation: May vary within functional limits
• Packaging format: Cut Tape (CT) & Digi-Reel® or Tape & Reel (TR) formats are interchangeable

The substitute parts identified meet all mandatory equivalence criteria while offering enhanced or equivalent performance characteristics in allowable variation parameters.

Parameter Comparison

Engineering Selection Recommendations

HN1C01FE-Y,LF (Direct Substitute - Toshiba)

The HN1C01FE-Y,LF is the primary direct substitute for the obsolete HN2C01FEYTE85LF. Both devices are manufactured by Toshiba and share identical electrical specifications across all critical parameters: 150mA collector current, 50V breakdown voltage, 100nA cutoff current, and 120 minimum DC current gain. The HN1C01FE-Y,LF offers enhanced transition frequency (80MHz versus 60MHz) while maintaining equivalent power dissipation (100mW). This part is currently in active production status with ROHS3 compliance certification. The primary difference is packaging format: HN1C01FE-Y,LF is supplied in Tape & Reel (TR) format, whereas the original part was available in Cut Tape (CT) & Digi-Reel® format. Both formats are compatible with standard surface mount assembly processes.

EMX1T2R (Similar Substitute - Rohm)

The EMX1T2R manufactured by Rohm Semiconductor meets all mandatory electrical equivalence criteria and is suitable for applications where the original HN2C01FEYTE85LF was specified. This device provides enhanced performance characteristics: transition frequency of 180MHz (versus 60MHz) and maximum power dissipation of 150mW (versus 100mW). The EMX1T2R exhibits higher Vce saturation (400mV @ 5mA, 50mA) compared to the Toshiba devices (250mV @ 10mA, 100mA), which may affect switching speed in saturation-mode applications. The EMX1T2R is in active production with ROHS3 compliance and REACH unaffected status. This part is supplied in Cut Tape (CT) & Digi-Reel® format, matching the original packaging type.

Selection Criteria:

• For direct replacement with minimal design impact: Select HN1C01FE-Y,LF
• For applications requiring higher frequency performance: Select EMX1T2R
• For applications sensitive to saturation voltage characteristics: Select HN1C01FE-Y,LF
• For packaging format consistency with original specifications: Select EMX1T2R

Frequently Asked Questions (FAQ)

Q: Can the HN1C01FE-Y,LF be used as a direct replacement for the HN2C01FEYTE85LF?

A: Yes. Both devices are dual NPN transistor arrays with identical electrical specifications: 150mA maximum collector current, 50V breakdown voltage, 100nA cutoff current, and 120 minimum DC current gain. The HN1C01FE-Y,LF is in active production status, whereas the HN2C01FEYTE85LF is obsolete. The primary difference is packaging format (Tape & Reel versus Cut Tape & Digi-Reel), which does not affect electrical performance or PCB assembly compatibility.

Q: What are the key differences between the HN1C01FE-Y,LF and EMX1T2R?

A: Both parts meet the mandatory electrical equivalence criteria for substitution. The HN1C01FE-Y,LF (Toshiba) maintains identical specifications to the original part with enhanced transition frequency (80MHz). The EMX1T2R (Rohm) offers higher transition frequency (180MHz) and greater power dissipation capability (150mW), but exhibits higher Vce saturation voltage (400mV versus 250mV). Selection depends on application requirements for switching speed and saturation characteristics.

Q: Are the package types (SOT-563 and SOT-666) interchangeable?

A: Yes. All three parts (HN2C01FEYTE85LF, HN1C01FE-Y,LF, and EMX1T2R) are available in both SOT-563 and SOT-666 package options. These are equivalent surface mount packages for dual NPN transistor arrays. Package selection should be based on PCB layout requirements and assembly equipment compatibility.

Q: What is the significance of the transition frequency difference between these parts?

A: Transition frequency (fT) indicates the frequency at which the transistor's current gain drops to unity. The HN2C01FEYTE85LF operates at 60MHz, the HN1C01FE-Y,LF at 80MHz, and the EMX1T2R at 180MHz. For applications operating below 60MHz, all three parts are functionally equivalent. For higher-frequency applications, the EMX1T2R provides superior performance margin.

Q: Does the Vce saturation voltage difference affect circuit performance?

A: Vce saturation voltage affects power dissipation and switching characteristics in saturation-mode applications. The Toshiba devices (HN2C01FEYTE85LF and HN1C01FE-Y,LF) exhibit 250mV saturation voltage, while the Rohm EMX1T2R exhibits 400mV. In applications where the transistor operates in saturation (fully on), the higher saturation voltage of the EMX1T2R results in increased power dissipation. For linear amplification or switching applications operating in the active region, this difference is negligible.

Q: Are all three parts RoHS compliant?

A: The HN1C01FE-Y,LF and EMX1T2R are both ROHS3 compliant. RoHS compliance status for the original HN2C01FEYTE85LF is not specified in the available documentation. Both active substitute parts meet current environmental and regulatory requirements for electronic component manufacturing.

Q: What is the moisture sensitivity level (MSL) for these parts?

A: All three parts have MSL rating of 1 (Unlimited), indicating no moisture sensitivity. These components do not require special moisture control during storage, handling, or assembly processes.