HN2C01FE-GR(T5L,F) Equivalent & Substitute Parts

Part Overview

The HN2C01FE-GR(T5L,F) is a dual NPN bipolar junction transistor array manufactured by Toshiba Semiconductor and Storage. This component is classified as a 2 NPN (Dual) transistor rated for 50V collector-emitter breakdown voltage with a maximum collector current of 150mA and 100mW power dissipation. The device is packaged in an ES6 surface mount configuration (SOT-563, SOT-666 equivalent packages).

The HN2C01FE-GR(T5L,F) has reached obsolete product status. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain reliability, and support ongoing production requirements for applications utilizing this component.

Substiute Parts

HN2C01FE-GR(T5L,F)

Toshiba Semiconductor and StorageIn Stock: 831HN2C01FE-GR(T5L,F) Datasheet

Current PartRFQ

2SC6026MFVGR,L3F

Toshiba Semiconductor and StorageIn Stock: 295262SC6026MFVGR,L3F Datasheet

SimilarRFQ

EMX1T2R

Rohm SemiconductorIn Stock: 101224EMX1T2R Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the HN2C01FE-GR(T5L,F) is determined by electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

• Maximum collector current (Ic): 150mA minimum
• Collector-emitter breakdown voltage (VCEO): 50V minimum
• Maximum power dissipation: 100mW minimum
• Transition frequency: 60MHz minimum
• DC current gain (hFE): 200 minimum at specified conditions
• Collector cutoff current (ICBO): 100nA maximum
• Vce saturation characteristics within acceptable operating ranges

Mechanical Compatibility Criteria:

• Surface mount packaging configuration
• Pin count and arrangement compatibility
• Moisture sensitivity level: MSL 1 (Unlimited)

Two substitute parts meet these criteria with varying degrees of parameter alignment:

1. 2SC6026MFVGR,L3F (Toshiba): Single NPN transistor with identical electrical specifications but different package configuration (SOT-723 vs. ES6). Active product status with RoHS3 compliance.

2. EMX1T2R (Rohm Semiconductor): Dual NPN transistor array with matching package footprint (SOT-563, SOT-666) and active product status. Exceeds electrical specifications in transition frequency (180MHz vs. 60MHz) and power rating (150mW vs. 100mW). Contains minor variations in saturation voltage and DC current gain parameters.

Parameter Comparison

Engineering Selection Recommendations

EMX1T2R (Rohm Semiconductor) is the primary substitute for the HN2C01FE-GR(T5L,F) based on the following factors:

• Identical transistor configuration (2 NPN dual array)
• Direct package compatibility (SOT-563, SOT-666)
• Active product status with established supply chain availability
• RoHS3 compliance and REACH unaffected status
• Electrical parameters meet or exceed original specifications
• Higher transition frequency (180MHz) and power rating (150mW) provide design margin

2SC6026MFVGR,L3F (Toshiba) serves as a secondary substitute option with the following considerations:

• Active product status with RoHS3 compliance
• Identical electrical specifications to the original part
• Single NPN configuration requires circuit redesign if dual transistor functionality is required
• Different package footprint (SOT-723) necessitates PCB layout modification
• Suitable for applications where single transistor operation is acceptable

Selection between these substitutes depends on circuit requirements regarding transistor count, package footprint constraints, and design flexibility.

Frequently Asked Questions (FAQ)

Q: Can the EMX1T2R directly replace the HN2C01FE-GR(T5L,F) without PCB modification?

A: Yes. The EMX1T2R maintains identical package footprint (SOT-563, SOT-666), pin configuration, and dual NPN transistor array structure. No PCB layout changes are required.

Q: What are the key electrical differences between EMX1T2R and the original part?

A: The EMX1T2R provides higher transition frequency (180MHz vs. 60MHz) and increased power rating (150mW vs. 100mW). Vce saturation voltage is higher (400mV vs. 250mV at different test conditions) and DC current gain is lower (120 vs. 200 at different test conditions). These differences represent enhanced performance capability in frequency response and thermal handling.

Q: Is the 2SC6026MFVGR,L3F suitable for applications requiring dual transistor functionality?

A: No. The 2SC6026MFVGR,L3F is a single NPN transistor, whereas the original HN2C01FE-GR(T5L,F) is a dual NPN array. Circuit redesign is necessary if both transistor elements are utilized in the original design.

Q: What is the impact of the different package between 2SC6026MFVGR,L3F (SOT-723) and the original part (ES6)?

A: The SOT-723 package has a different physical footprint and pin arrangement compared to the ES6 package. PCB layout redesign is required, including trace routing and component placement modifications.

Q: Are both substitute parts compliant with current environmental regulations?

A: Yes. Both EMX1T2R and 2SC6026MFVGR,L3F are RoHS3 compliant and REACH unaffected, meeting current environmental and regulatory requirements.

Q: Which substitute part offers the best supply chain availability?

A: EMX1T2R has significantly higher inventory availability (101,200 pcs) compared to 2SC6026MFVGR,L3F (29,508 pcs), providing greater supply chain reliability for production requirements.

Q: Can the EMX1T2R be used in high-frequency applications beyond 60MHz?

A: Yes. The EMX1T2R transition frequency of 180MHz exceeds the original specification of 60MHz, enabling operation in higher-frequency circuit applications.