HN1C01FU-Y(T5L,F,T) Equivalent & Substitute Parts

Part Overview

The HN1C01FU-Y(T5L,F,T) is a dual NPN bipolar junction transistor array manufactured by Toshiba Semiconductor and Storage. This surface mount component operates at 50V collector-emitter breakdown voltage with a maximum collector current of 150mA and is designed for general-purpose switching and amplification applications. The device is currently in active production status with 949 units in stock. Equivalent and substitute parts are identified to support design flexibility, supply chain continuity, and application-specific performance requirements where electrical and mechanical parameters align with the original specification.

Substiute Parts

HN1C01FU-Y(T5L,F,T

Toshiba Semiconductor and StorageIn Stock: 1023HN1C01FU-Y(T5L,F,T Datasheet

Current PartRFQ

PUMX2,125

Nexperia USA Inc.In Stock: 988PUMX2,125 Datasheet

SimilarRFQ

UMX1NTN

Rohm SemiconductorIn Stock: 224446UMX1NTN Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the HN1C01FU-Y(T5L,F,T) are qualified based on the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

• Transistor configuration: 2 NPN (Dual) array
• Maximum collector current: 150mA
• Collector-emitter breakdown voltage: 50V
• Collector cutoff current: 100nA (ICBO)
• Minimum DC current gain (hFE): 120
• Moisture sensitivity level: 1 (Unlimited)

Mechanical Compatibility Criteria:

• Mounting type: Surface Mount
• Package family: 6-TSSOP, SC-88, SOT-363 compatible footprints
• Product status: Active

Substitute parts identified meet or exceed the electrical specifications of the main part while maintaining compatible package geometries and surface mount assembly requirements. All substitute parts are currently in active production status.

Parameter Comparison

Engineering Selection Recommendations

PUMX2,125 (Nexperia USA Inc.): This substitute part meets all electrical requirements of the HN1C01FU-Y(T5L,F,T) with identical maximum collector current (150mA) and collector-emitter breakdown voltage (50V). The PUMX2,125 offers enhanced power dissipation capability (300mW versus 200mW) and higher transition frequency (100MHz versus 80MHz). The device carries AEC-Q100 automotive qualification and ROHS3 compliance, providing additional qualification coverage for automotive and industrial applications. Vce saturation is equivalent at the specified test conditions. Operating temperature rating is elevated to 150°C. This part is suitable for direct substitution in applications where the enhanced thermal and frequency performance provides design margin.

UMX1NTN (Rohm Semiconductor): This substitute part satisfies all core electrical parameters with matching maximum collector current (150mA) and collector-emitter breakdown voltage (50V). The UMX1NTN provides the highest transition frequency (180MHz) among the three options, supporting higher-speed switching applications. However, the maximum power dissipation is reduced to 150mW and Vce saturation is elevated to 400mV at the specified test conditions. The device maintains ROHS3 compliance and unlimited moisture sensitivity level. This part is suitable for substitution in applications where higher frequency performance is required and power dissipation constraints are less stringent than the original specification.

All substitute parts maintain compatible 6-TSSOP surface mount packaging and are currently in active production with established supply availability.

Frequently Asked Questions (FAQ)

Q: Can PUMX2,125 be used as a direct replacement for HN1C01FU-Y(T5L,F,T)?

A: Yes. Both devices are dual NPN transistor arrays with identical maximum collector current (150mA) and collector-emitter breakdown voltage (50V). The PUMX2,125 meets or exceeds all electrical specifications and uses compatible 6-TSSOP surface mount packaging. The enhanced power rating (300mW) and transition frequency (100MHz) provide additional performance margin.

Q: What are the differences in saturation voltage between these parts?

A: The HN1C01FU-Y(T5L,F,T) specifies 250mV Vce saturation at 10mA base current and 100mA collector current. The PUMX2,125 specifies 250mV at 5mA base current and 50mA collector current. The UMX1NTN specifies 400mV at 5mA base current and 50mA collector current. Applications sensitive to saturation voltage performance should evaluate test conditions and operating points.

Q: Are all three parts compatible with the same PCB footprint?

A: Yes. All three parts use 6-TSSOP surface mount packaging with compatible SC-88 and SOT-363 footprint designations. PCB layout and assembly processes require no modification for substitution.

Q: Which substitute part offers the best high-frequency performance?

A: The UMX1NTN provides the highest transition frequency at 180MHz, compared to 100MHz for PUMX2,125 and 80MHz for the original HN1C01FU-Y(T5L,F,T). Selection depends on application switching speed requirements.

Q: What is the maximum operating temperature for each part?

A: The HN1C01FU-Y(T5L,F,T) operates to 125°C junction temperature. Both PUMX2,125 and UMX1NTN operate to 150°C junction temperature, providing extended thermal operating range.

Q: Do all parts meet RoHS compliance requirements?

A: Yes. The HN1C01FU-Y(T5L,F,T) is RoHS Compliant. The PUMX2,125 and UMX1NTN are ROHS3 Compliant, meeting current RoHS directive requirements.

Q: Which substitute part has the highest power dissipation rating?

A: The PUMX2,125 has a maximum power rating of 300mW, compared to 200mW for the HN1C01FU-Y(T5L,F,T) and 150mW for the UMX1NTN. Applications with higher power dissipation requirements should select PUMX2,125.

Q: Are moisture sensitivity levels equivalent across all three parts?

A: Yes. All three parts have Moisture Sensitivity Level 1 (Unlimited), indicating no moisture sensitivity restrictions for storage, handling, or assembly.