HN1C01FU-GR,LF Equivalent & Substitute Parts

Part Overview

The HN1C01FU-GR,LF is a dual NPN bipolar junction transistor (BJT) array manufactured by Toshiba Semiconductor and Storage. This surface mount component operates at 50V maximum collector-emitter breakdown voltage with 150mA maximum collector current, designed for general-purpose switching and amplification applications. The device is classified as Active product status with full RoHS3 compliance and unlimited moisture sensitivity rating (MSL 1).

Equivalent and substitute parts are identified based on matching electrical performance parameters, package compatibility, and operational specifications. Alternative components serve applications where the primary part is unavailable, supply constraints exist, or design requirements permit functional equivalents with identical or superior electrical characteristics.

Substiute Parts

HN1C01FU-GR,LF

Toshiba Semiconductor and StorageIn Stock: 4150HN1C01FU-GR,LF Datasheet

Current PartRFQ

PUMX2,115

Nexperia USA Inc.In Stock: 3738PUMX2,115 Datasheet

SimilarRFQ

UMX1NTN

Rohm SemiconductorIn Stock: 224446UMX1NTN Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the HN1C01FU-GR,LF is determined by the following critical electrical and mechanical parameters:

Primary Matching Criteria:

• Transistor configuration: 2 NPN (Dual) array
• Maximum collector current: 150mA
• Maximum collector-emitter breakdown voltage: 50V
• Package type: 6-TSSOP / SC-88 / SOT-363 surface mount
• RoHS3 compliance
• Moisture sensitivity level: 1 (Unlimited)

Secondary Compatibility Parameters:

• Vce saturation characteristics
• DC current gain (hFE)
• Transition frequency
• Operating temperature range
• Power dissipation rating

Identified substitute parts PUMX2,115 (Nexperia USA Inc.) and UMX1NTN (Rohm Semiconductor) satisfy all primary matching criteria and maintain electrical performance within acceptable operational boundaries for direct substitution in the HN1C01FU-GR,LF application space.

Parameter Comparison

Engineering Selection Recommendations

PUMX2,115 (Nexperia USA Inc.):

The PUMX2,115 provides direct functional equivalence to the HN1C01FU-GR,LF with enhanced performance characteristics. This substitute maintains identical maximum collector current (150mA) and collector-emitter breakdown voltage (50V). The PUMX2,115 offers superior power dissipation capability (300mW versus 200mW) and higher transition frequency (100MHz versus 80MHz). Operating temperature range extends to 150°C, providing thermal margin beyond the primary part. The device carries AEC-Q100 automotive qualification and REACH compliance status. RoHS3 compliance and MSL 1 rating match the primary component. This substitute is suitable for applications requiring enhanced thermal performance or automotive-grade reliability.

UMX1NTN (Rohm Semiconductor):

The UMX1NTN functions as a direct substitute with electrical parameters meeting or exceeding the HN1C01FU-GR,LF specification. Maximum collector current and breakdown voltage remain identical at 150mA and 50V respectively. The UMX1NTN demonstrates the highest transition frequency among the three components at 180MHz, supporting higher-speed switching applications. Operating temperature extends to 150°C. Power dissipation rating is 150mW, which is lower than the primary part but remains adequate for standard switching applications. RoHS3 compliance and MSL 1 rating are maintained. REACH compliance is confirmed. This substitute is appropriate for applications prioritizing high-frequency performance or where lower power dissipation is beneficial.

All substitute parts maintain Active product status, ensuring continued availability and manufacturing support. Selection between substitutes depends on application-specific requirements for thermal performance, switching speed, and power handling capacity.

Frequently Asked Questions (FAQ)

Q: Can PUMX2,115 replace HN1C01FU-GR,LF in all applications?

A: The PUMX2,115 provides functional equivalence for applications within the HN1C01FU-GR,LF electrical specification envelope. Both components share identical maximum collector current (150mA), collector-emitter breakdown voltage (50V), and package configuration (6-TSSOP). The PUMX2,115 offers enhanced power dissipation (300mW) and higher transition frequency (100MHz), making it suitable for applications requiring these performance improvements. Verification of specific circuit requirements is necessary to confirm compatibility.

Q: What are the key differences between UMX1NTN and HN1C01FU-GR,LF?

A: The UMX1NTN and HN1C01FU-GR,LF share identical maximum ratings for collector current (150mA) and breakdown voltage (50V). Primary differences include transition frequency (180MHz versus 80MHz), maximum power dissipation (150mW versus 200mW), and supplier device package designation (UMT6 versus US6). Both components are RoHS3 compliant with MSL 1 rating. The UMX1NTN is optimized for higher-frequency applications, while the HN1C01FU-GR,LF provides higher power handling capacity.

Q: Are all three components pin-compatible?

A: All three components utilize the 6-TSSOP / SC-88 / SOT-363 package family with identical pinout configuration for dual NPN transistor arrays. Physical and electrical pin compatibility is confirmed across HN1C01FU-GR,LF, PUMX2,115, and UMX1NTN. PCB layout modifications are not required for substitution.

Q: Which substitute part offers the best thermal performance?

A: The PUMX2,115 provides the highest maximum power dissipation rating at 300mW and the highest operating temperature specification at 150°C. This component is recommended for applications requiring enhanced thermal margin or operation in elevated temperature environments. The UMX1NTN operates to 150°C but with lower power dissipation (150mW). The primary HN1C01FU-GR,LF is rated to 125°C with 200mW power dissipation.

Q: What is the difference between the supplier device packages (US6, 6-TSSOP, UMT6)?

A: US6, 6-TSSOP, and UMT6 are equivalent package designations for the same physical 6-pin surface mount configuration. US6 is the Toshiba supplier designation, 6-TSSOP is the industry standard designation, and UMT6 is the Rohm supplier designation. All three refer to identical package dimensions and pinout. No physical or electrical differences exist between these designations.

Q: Can UMX1NTN be used in applications requiring 200mW power dissipation?

A: The UMX1NTN is rated for maximum 150mW power dissipation, which is lower than the HN1C01FU-GR,LF (200mW). Applications requiring sustained power dissipation above 150mW should utilize the HN1C01FU-GR,LF or PUMX2,115 (300mW). The UMX1NTN is suitable for applications with peak or average power dissipation within its 150mW specification.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. The HN1C01FU-GR,LF, PUMX2,115, and UMX1NTN are all RoHS3 compliant. All three components carry unlimited moisture sensitivity level (MSL 1) rating. The PUMX2,115 additionally carries REACH compliance status and AEC-Q100 automotive qualification.

Q: Which substitute part has the highest transition frequency?

A: The UMX1NTN operates at 180MHz transition frequency, the highest among the three components. The PUMX2,115 operates at 100MHz, and the HN1C01FU-GR,LF operates at 80MHz. The UMX1NTN is recommended for high-frequency switching applications requiring maximum transition frequency performance.