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HIP6601BCBZ Equivalent & Substitute Parts
Part Overview
The HIP6601BCBZ is a half-bridge gate driver IC manufactured by Renesas Electronics Corporation, designed for synchronous N-channel MOSFET applications. This non-inverting gate driver operates with a supply voltage range of 10.8V to 13.2V and features a maximum bootstrap voltage of 15V. The device is packaged in an 8-SOIC surface mount package with typical rise and fall times of 20ns each.
The HIP6601BCBZ is classified as obsolete. Identifying equivalent substitute parts is necessary to maintain design continuity and ensure component availability for new production runs and system maintenance.
Substiute Parts
Key Parameters
| Parameter | Value |
|---|---|
| Driven Configuration | Half-Bridge |
| Channel Type | Synchronous |
| Number of Drivers | 2 |
| Gate Type | N-Channel MOSFET |
| Voltage - Supply | 10.8V ~ 13.2V |
| Input Type | Non-Inverting |
| High Side Voltage - Max (Bootstrap) | 15V |
| Rise / Fall Time (Typ) | 20ns / 20ns |
| Operating Temperature | 0°C ~ 125°C (TJ) |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Substitute Part Grouping Explanation
Substitution of the HIP6601BCBZ is determined by the following critical parameters:
- Driven Configuration & Channel Type: Must be half-bridge synchronous topology with 2 N-channel MOSFET drivers
- Input Logic: Must be non-inverting to maintain signal compatibility
- Package: Must be 8-SOIC surface mount with identical pinout
- Supply Voltage Compatibility: Substitute must operate within or encompass the 10.8V ~ 13.2V range
- Bootstrap Voltage: Substitute must support at least 15V maximum bootstrap voltage
- Compliance: Must maintain ROHS3 compliance and MSL 1 rating
The NCP3420DR2G from onsemi meets these substitution criteria. It maintains identical half-bridge synchronous topology, non-inverting input configuration, and 8-SOIC packaging. The substitute part extends the supply voltage range to 4.6V ~ 13.2V and increases bootstrap voltage capability to 35V, providing enhanced operational flexibility while remaining backward compatible with the original design envelope.
Parameter Comparison
| Parameter | HIP6601BCBZ (Renesas) | NCP3420DR2G (onsemi) |
|---|---|---|
| Manufacturer | Renesas Electronics Corporation | onsemi |
| Product Status | Obsolete | Active |
| Driven Configuration | Half-Bridge | Half-Bridge |
| Channel Type | Synchronous | Synchronous |
| Number of Drivers | 2 | 2 |
| Gate Type | N-Channel MOSFET | N-Channel MOSFET |
| Voltage - Supply | 10.8V ~ 13.2V | 4.6V ~ 13.2V |
| Logic Voltage - VIL, VIH | Not specified | 0.8V, 2V |
| Input Type | Non-Inverting | Non-Inverting |
| High Side Voltage - Max (Bootstrap) | 15V | 35V |
| Rise / Fall Time (Typ) | 20ns / 20ns | 16ns / 11ns |
| Operating Temperature | 0°C ~ 125°C (TJ) | 0°C ~ 150°C (TJ) |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) |
| REACH Status | REACH Unaffected | REACH Unaffected |
Engineering Selection Recommendations
The NCP3420DR2G is a direct functional substitute for the obsolete HIP6601BCBZ. Both devices maintain identical half-bridge gate driver topology, non-inverting input logic, and 8-SOIC packaging, ensuring pin-compatible replacement without circuit redesign.
The NCP3420DR2G offers active product status with extended availability, providing supply chain continuity. Both parts maintain ROHS3 compliance and REACH unaffected status, satisfying regulatory requirements for new production.
The substitute part provides enhanced specifications within the original design envelope: extended supply voltage range (4.6V minimum vs. 10.8V), increased bootstrap voltage capability (35V vs. 15V), and improved thermal operating range (0°C to 150°C vs. 0°C to 125°C). These enhancements do not introduce incompatibility with existing designs specified for the HIP6601BCBZ.
Frequently Asked Questions (FAQ)
Q: Can the NCP3420DR2G directly replace the HIP6601BCBZ without circuit modification?
A: Yes. Both devices are half-bridge gate drivers with identical non-inverting input configuration and 8-SOIC pinout. No circuit redesign is required for direct substitution.
Q: What are the key differences between these parts?
A: The NCP3420DR2G extends the minimum supply voltage to 4.6V (vs. 10.8V), increases bootstrap voltage to 35V (vs. 15V), and expands the operating temperature range to 150°C (vs. 125°C). Rise and fall times are faster on the substitute (16ns/11ns vs. 20ns/20ns).
Q: Are both parts compliant with the same regulatory standards?
A: Yes. Both the HIP6601BCBZ and NCP3420DR2G are ROHS3 compliant, REACH unaffected, and carry MSL 1 moisture sensitivity rating.
Q: Does the faster switching speed of the NCP3420DR2G affect circuit performance?
A: The faster rise and fall times of the NCP3420DR2G (16ns/11ns vs. 20ns/20ns) represent improved performance characteristics. These faster transitions remain compatible with designs specified for the original part and do not introduce incompatibility.
Q: What is the inventory status of each part?
A: The HIP6601BCBZ is obsolete with 2443 pieces in stock. The NCP3420DR2G is active with 282700 pieces available, providing superior long-term supply chain availability.
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