HIP2100EIB Equivalent & Substitute Parts

Part Overview

The HIP2100EIB is a half-bridge gate driver IC manufactured by Renesas Electronics Corporation, designed for driving N-channel MOSFETs in half-bridge configurations. This device operates with a supply voltage range of 9V to 14V and delivers peak output currents of 2A for both source and sink operations. The HIP2100EIB is classified as obsolete, making identification of suitable substitute parts essential for ongoing system support and new design implementations.

Substiute Parts

HIP2100EIB
Renesas Electronics CorporationIn Stock: 1069HIP2100EIB Datasheet
HIP2100EIB
Current Part
HIP2100EIBZ
Renesas Electronics CorporationIn Stock: 25739HIP2100EIBZ Datasheet
HIP2100EIBZ
Direct
MAX15018AASA+
Analog Devices Inc./Maxim IntegratedIn Stock: 699MAX15018AASA+ Datasheet
MAX15018AASA+
Similar

Key Parameters

Parameter Value
Driven Configuration Half-Bridge
Number of Drivers 2
Gate Type N-Channel MOSFET
Voltage - Supply 9V ~ 14V
Current - Peak Output (Source, Sink) 2A, 2A
High Side Voltage - Max (Bootstrap) 114 V
Package / Case 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Operating Temperature -55°C ~ 150°C (TJ)

Substitute Part Grouping Explanation

Substitute parts for the HIP2100EIB are identified based on functional equivalence within the half-bridge gate driver category. The critical parameters determining substitution compatibility are:

  • Driven configuration (half-bridge topology)
  • Number of independent drivers (2 channels)
  • Gate type (N-channel MOSFET)
  • Package type (8-SOIC with exposed pad)
  • Supply voltage range compatibility
  • Peak output current capability
  • Bootstrap voltage rating

Two substitute parts meet these criteria: HIP2100EIBZ (direct manufacturer equivalent) and MAX15018AASA+ (functionally similar alternative from Analog Devices Inc./Maxim Integrated).

Parameter Comparison

Parameter HIP2100EIB HIP2100EIBZ MAX15018AASA+
Manufacturer Renesas Electronics Renesas Electronics Analog Devices Inc./Maxim Integrated
Product Status Obsolete Active Obsolete
Driven Configuration Half-Bridge Half-Bridge Half-Bridge
Number of Drivers 2 2 2
Gate Type N-Channel MOSFET N-Channel MOSFET N-Channel MOSFET
Voltage - Supply 9V ~ 14V 9V ~ 14V 8V ~ 12.6V
Current - Peak Output (Source, Sink) 2A, 2A 2A, 2A 3A, 3A
High Side Voltage - Max (Bootstrap) 114 V 114 V 125 V
Rise / Fall Time (Typ) 10ns, 10ns 10ns, 10ns 50ns, 40ns
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Package / Case 8-SOIC (0.154", 3.90mm Width) Exposed Pad 8-SOIC (0.154", 3.90mm Width) Exposed Pad 8-SOIC (0.154", 3.90mm Width) Exposed Pad
RoHS Status RoHS non-compliant ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 2 (1 Year) 2 (1 Year) 1 (Unlimited)

Engineering Selection Recommendations

HIP2100EIBZ is the primary substitute for HIP2100EIB applications. This part maintains identical electrical specifications and package configuration while offering active product status and ROHS3 compliance. The HIP2100EIBZ is sourced from the same manufacturer with 25,652 units in stock, ensuring supply continuity and design compatibility.

MAX15018AASA+ serves as a functional alternative for applications where higher peak output current (3A vs. 2A) and extended bootstrap voltage rating (125V vs. 114V) provide design margin benefits. However, this part exhibits slower rise and fall times (50ns/40ns vs. 10ns/10ns) and a narrower supply voltage range (8V ~ 12.6V vs. 9V ~ 14V). The MAX15018AASA+ is classified as obsolete with limited inventory (627 units), making it suitable only for legacy system support rather than new designs.

Frequently Asked Questions (FAQ)

Q: Can HIP2100EIBZ be used as a direct replacement for HIP2100EIB?

A: Yes. HIP2100EIBZ maintains identical electrical specifications, operating temperature range, and 8-SOIC package configuration. The primary difference is product status (active vs. obsolete) and RoHS compliance (ROHS3 vs. non-compliant). No circuit modifications are required.

Q: What are the limitations of MAX15018AASA+ as a substitute?

A: MAX15018AASA+ differs in three key areas: supply voltage range (8V ~ 12.6V vs. 9V ~ 14V), switching speed (50ns/40ns rise/fall vs. 10ns/10ns), and peak output current (3A vs. 2A). Applications requiring the full 9V ~ 14V supply range or fast switching transitions may not be compatible. Verify supply voltage and timing requirements before selection.

Q: Are all substitute parts available in the same package?

A: Yes. HIP2100EIB, HIP2100EIBZ, and MAX15018AASA+ are all packaged in 8-SOIC (0.154", 3.90mm Width) with exposed pad. PCB footprints are identical, enabling direct physical replacement.

Q: Which substitute should be selected for new designs?

A: HIP2100EIBZ is recommended for new designs. It offers active product status, ROHS3 compliance, and abundant inventory (25,652 units). MAX15018AASA+ should be reserved for legacy system support only, given its obsolete status and limited stock.

Q: What is the impact of different rise and fall times?

A: Rise and fall times affect gate drive speed and switching losses. HIP2100EIB and HIP2100EIBZ deliver 10ns transitions, while MAX15018AASA+ delivers 50ns/40ns transitions. Slower transitions increase switching losses and may affect system efficiency in high-frequency applications.

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